Результат пошуку "4NK60" : 99
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Мінімальне замовлення: 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| STP14NK60Z | ST |
 09+ |
на замовлення 43 шт: термін постачання 14-28 дні (днів) |
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| STP14NK60ZF |
на замовлення 55000 шт: термін постачання 14-28 дні (днів) |
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| STP4NK60 | ST | TO-220 04+ |
на замовлення 6000 шт: термін постачання 14-28 дні (днів) |
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| STP4NK60FP |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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| STP4NK60TBF(4N60) |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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| STP4NK60Z |
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на замовлення 3 шт: термін постачання 2-3 дні (днів) |
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| STP4NK60ZFP | STMicroelectronics NV |
N-кан. MOSFET 600V, 4.0A, 1.76Ом, 25Вт, TO-220FP (Zener-Protected SuperMESH) |
на замовлення 500 шт: термін постачання 5 дні (днів) |
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| STP4NK60ZFP-E |
на замовлення 144003 шт: термін постачання 14-28 дні (днів) |
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| STP4NK60ZP | ST | 09+ |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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| STW14NK60Z |
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на замовлення 199950 шт: термін постачання 14-28 дні (днів) |
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| Транзистор STP14NK60ZFP, TO-220 |
на замовлення 10 шт: термін постачання 2-3 дні (днів) |
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STB4NK60S (транзистор біполярный NPN) Код товару: 19150 |
Транзистори > Біполярні NPN |
товар відсутній
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STB4NK60Z Код товару: 155603 |
Транзистори > Польові N-канальні |
товар відсутній
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STB4NK60ZT4 Код товару: 61457 |
Транзистори > Польові N-канальні |
товар відсутній
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STD4NK60ZT4 Код товару: 72559 |
Транзистори > Польові N-канальні |
товар відсутній
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STB14NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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STB14NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| STB14NK60ZT4 | STMicroelectronics |
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STB14NK60ZT4 | STMicroelectronics |
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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STB4NK60Z-1 | STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
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| STB4NK60Z-1 | STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
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STB4NK60Z-1 | STMicroelectronics |
Description: MOSFET N-CH 600V 4A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товар відсутній |
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STB4NK60Z-1 | STMicroelectronics |
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A |
товар відсутній |
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STD4NK60Z-1 | STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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| STD4NK60Z-1 | STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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STD4NK60ZT4 | STMicroelectronics |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товар відсутній |
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STP14NK60Z | STMicroelectronics |
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP14NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
товар відсутній |
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STP14NK60ZFP | STMicroelectronics |
Description: MOSFET N-CH 600V 13.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
товар відсутній |
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| STP14NK60ZFP | STMicroelectronics |
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
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STP4NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 160 шт: термін постачання 7-14 дні (днів) |
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| STP4NK60Z | STMicroelectronics |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STW14NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
товар відсутній |
| STP4NK60ZFP | |
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Виробник: STMicroelectronics NV
N-кан. MOSFET 600V, 4.0A, 1.76Ом, 25Вт, TO-220FP (Zener-Protected SuperMESH)
N-кан. MOSFET 600V, 4.0A, 1.76Ом, 25Вт, TO-220FP (Zener-Protected SuperMESH)
на замовлення 500 шт:
термін постачання 5 дні (днів)| STB14NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| STB14NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| STB14NK60ZT4 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| STB14NK60ZT4 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 13.5A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube
товар відсутній
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) I2PAK Tube
товар відсутній
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 600V 4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
товар відсутній
| STD4NK60Z-1 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| STD4NK60Z-1 |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| STD4NK60ZT4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
| STP14NK60Z |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP14NK60Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Description: MOSFET N-CH 600V 13.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
товар відсутній
| STP14NK60ZFP | |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Description: MOSFET N-CH 600V 13.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
товар відсутній
| STP14NK60ZFP | |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| STP4NK60Z | |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 160 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.47 грн |
| 5+ | 59.91 грн |
| 10+ | 46.95 грн |
| 23+ | 42.87 грн |
| 50+ | 42.7 грн |
| 62+ | 40.54 грн |
| 250+ | 39.87 грн |
| STP4NK60Z | |
|
Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STW14NK60Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Description: MOSFET N-CH 600V 13.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
товар відсутній
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