Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 22nF; 100V; SMD; ±5%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 4.8x3.3x2.4mm
Capacitance: 22nF
Tolerance: ±5%

Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 22nF; 100V; SMD; ±5%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 4.8x3.3x2.4mm
Capacitance: 22nF
Tolerance: ±5%
кількість в упаковці: 2000 шт

Виробник: Panasonic
Cap Film 0.022uF 100V PPS 5% (4.8 X 3.3 X 2.4mm) SMD 105C T/R

Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 220nF; 100V; SMD; ±2%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 7.1x6.3x4.8mm
Capacitance: 0.22µF
Tolerance: ±2%

Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 220nF; 100V; SMD; ±2%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 7.1x6.3x4.8mm
Capacitance: 0.22µF
Tolerance: ±2%
кількість в упаковці: 1000 шт

Виробник: Panasonic
Cap Film 0.22uF 100V PPS 2% (7.1 X 6.3 X 4.8mm) SMD 105C T/R

Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 220nF; 100V; SMD; ±5%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 7.1x6.3x4.8mm
Capacitance: 0.22µF
Tolerance: ±5%

Виробник: PANASONIC
Category: SMD capacitors - others
Description: Capacitor: polyphenylene; 220nF; 100V; SMD; ±5%; -55÷105°C
Mounting: SMD
Operating temperature: -55...105°C
Type of capacitor: polyphenylene
Operating voltage: 100V
Dimensions (a x b x c): 7.1x6.3x4.8mm
Capacitance: 0.22µF
Tolerance: ±5%
кількість в упаковці: 1000 шт

Виробник: Panasonic
Cap Film 0.22uF 100V PPS 5% (7.1 X 6.3 X 4.8mm) SMD 105C T/R

Виробник: Panasonic
Cap Film 0.027uF 100V PPS 2% (4.8 X 3.3 X 2.8mm) SMD 105C T/R

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 100A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT

Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Collector current: 60A
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Topology: boost chopper; buck chopper; H-bridge
Mechanical mounting: screw
Type of module: IGBT

Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Collector current: 60A
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Topology: boost chopper; buck chopper; H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт

Виробник: IXYS
Description: IGBT MOD 1200V 85A 290W V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: V1A-PAK
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA

Виробник: Littelfuse
Trans IGBT Module N-CH 1200V 85A 290000mW V1-A-Pack Box

Виробник: IXYS
IGBT Modules XPT IGBT Module

Виробник: Altech Corporation
Description: DOOR INTLK MECH FOR S-TD125 15-1
Packaging: Bulk
Part Status: Active

Виробник: Altech
Circuit Breaker Accessories DOOR INTLK. MECH. FOR S-TD125

Виробник: STMicroelectronics
SCT016HU120G3AG

Виробник: STMicroelectronics
SCT019HU120G3AG

Виробник: STMicroelectronics
SCT019HU120G3AG

Виробник: STMicroelectronics
SCT020HU120G3AG

Виробник: STMicroelectronics
SCT025HU120G3AG

Виробник: STMicroelectronics
SCT040HU120G3AG

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced

Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: STMicroelectronics
Trans MOSFET N-CH SiC 1.2KV 30A Automotive 8-Pin(7+Tab) HU3PAK T/R

Виробник: STMicroelectronics
SCT070HU120G3AG

Виробник: STMicroelectronics
Description: HU3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 1mA
Supplier Device Package: HU3PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
Qualification: AEC-Q101

Виробник: STMicroelectronics
MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A

Виробник: Amphenol Times Microwave Systems
Description: SNAP-IN HANGER FOR LMR-1200 COAX
Packaging: Bulk
For Use With/Related Products: LMR-1200
Material: Stainless Steel
Accessory Type: Hanger
Part Status: Active

Виробник: Amphenol Times Microwave Systems
Cable Mounting & Accessories Snap-in Hanger for LMR-1200 Coax

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 100A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт

Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 12 шт

Виробник: Emaggo
Різні комплектуючі > Різні комплектуючі 2
Опис: Электромагнит толкающий;U-12DC;10W;16мм;14.4Ohm