Результат пошуку "fdd3" : > 180
Вид перегляду :
.jpg "HVCB0603FDD33M0")
.jpg "HVCB2512FDD30M0")
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
FDD3680 | ON Semiconductor |
 Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3680 | onsemi |
Description: MOSFET N-CH 100V 25A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V Power Dissipation (Max): 68W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V |
товар відсутній |
|
|
|
FDD3682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|
|
|
FDD3682 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
FDD3682 | ON Semiconductor |
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3682 | ON Semiconductor |
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3682-F085 | onsemi |
Description: MOSFET N-CH 100V 5.5/32A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
FDD3682-F085 | ON Semiconductor |
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3682-F085 | onsemi |
Description: MOSFET N-CH 100V 5.5/32A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
FDD3690 | ON Semiconductor |
Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3690 | ON Semiconductor |
Trans MOSFET N-CH 100V 22A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3706 | onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
товар відсутній |
|
| FDD3706 | ON Semiconductor |
Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
||
|
|
FDD3706 | onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
товар відсутній |
|
|
|
FDD3706 | ON Semiconductor |
Trans MOSFET N-CH 20V 14.7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3860 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3860 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD390N15A | ON Semiconductor |
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD390N15A | ON Semiconductor |
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD390N15ALZ | ON Semiconductor |
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD390N15ALZ | onsemi |
Description: MOSFET N-CH 150V 26A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V |
товар відсутній |
|
|
|
FDD390N15ALZ | ON Semiconductor |
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD390N15ALZ | ON Semiconductor |
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3N40TF | onsemi |
Description: MOSFET N-CH 400V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
товар відсутній |
|
|
|
FDD3N40TF | onsemi |
Description: MOSFET N-CH 400V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
товар відсутній |
|
|
|
FDD3N40TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|
|
|
FDD3N40TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
FDD3N40TM | ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3N40TM | ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3N40TM | ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|
|
|
FDD3N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|
|
|
FDD3N50NZTM | onsemi |
Description: MOSFET N-CH 500V 2.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
товар відсутній |
|
|
|
FDD3N50NZTM | ON Semiconductor |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
|
|
FDD3N50NZTM | onsemi |
Description: MOSFET N-CH 500V 2.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
товар відсутній |
|
| AFDD-32/2/B/003 | EATON ELECTRIC | AFDD-32/2/B/003 RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/B/003-A | EATON ELECTRIC | AFDD-32/2/B/003-A RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/B/003-F | EATON ELECTRIC |
Category: RCD Circuit Breakers Description: Arc fault detector; Inom: 32A; Ires: 30mA; for DIN rail mounting Type of protection: arc fault detector Kind of circuit breaker: type F Current rating: 32A Residual current: 30mA Mounting: for DIN rail mounting IP rating: IP20 Cross section of connecting wires: 1...25mm2 Operating temperature: -25...40°C Short circuit breaking capacity: 6kA Mechanical durability: 20000 cycles Electrical life: 4000 cycles Characteristics: B Manufacturer series: AFDD xPole Home кількість в упаковці: 1 шт |
товар відсутній |
||
| AFDD-32/2/B/003-LI/A | EATON ELECTRIC | AFDD-32/2/B/003LIA RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/C/003 | EATON ELECTRIC | AFDD-32/2/C/003 RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/C/003-A | EATON ELECTRIC | AFDD-32/2/C/003-A RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/C/003-F | EATON ELECTRIC | AFDD-32/2/C/003-F RCD Circuit Breakers |
товар відсутній |
||
| AFDD-32/2/C/003-LI/A | EATON ELECTRIC | AFDD-32/2/C/003LIA RCD Circuit Breakers |
товар відсутній |
||
|
|
HVCB0603FDD33M0 | Stackpole Electronics Inc |
Description: RES 33M OHM 1% 0.06W 0603 Packaging: Tape & Reel (TR) Power (Watts): 0.06W Tolerance: ±1% Features: High Voltage, Moisture Resistant, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.79mm) Composition: Thick Film Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.020" (0.51mm) Resistance: 33 mOhms |
товар відсутній |
|
|
|
HVCB0603FDD33M0 | SEI Stackpole |
Thick Film Resistors - SMD RES, HV, 0603, 33 Mohm, 1%, 100 ppm, 0.06W |
товар відсутній |
|
|
|
HVCB1206FDD30M0 | Stackpole Electronics Inc |
Description: RES 30M OHM 1% 1/3W 1206 Packaging: Cut Tape (CT) Power (Watts): 0.333W, 1/3W Tolerance: ±1% Features: High Voltage, Moisture Resistant, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.030" (0.76mm) Resistance: 30 mOhms |
товар відсутній |
|
|
|
HVCB1206FDD30M0 | Stackpole Electronics Inc |
Description: RES 30M OHM 1% 1/3W 1206 Power (Watts): 0.333W, 1/3W Tolerance: ±1% Features: High Voltage, Moisture Resistant, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.030" (0.76mm) Resistance: 30 mOhms |
товар відсутній |
|
|
|
HVCB1206FDD30M0 | SEI Stackpole |
Thick Film Resistors - SMD RES, HV, 1206, 30 Mohm, 1%, 100 ppm, 0.33W |
товар відсутній |
|
|
|
HVCB2512FDD30M0 | Stackpole Electronics Inc |
Description: RES 30M OHM 1% 2W 2512 Packaging: Tape & Reel (TR) Power (Watts): 2W Tolerance: ±1% Features: High Voltage, Moisture Resistant, Pulse Withstanding Package / Case: 2512 (6432 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm) Composition: Thick Film Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: 2512 Height - Seated (Max): 0.030" (0.76mm) Part Status: Active Resistance: 30 mOhms |
товар відсутній |
|
|
|
HVCB2512FDD30M0 | SEI Stackpole |
Thick Film Resistors - SMD RES, HV, 2512, 30 Mohm, 1%, 100 ppm, 2W |
товар відсутній |
|
|
|
HVCB2512FDD3K00 | Stackpole Electronics Inc |
Description: RES 3K OHM 1% 2W 2512 Packaging: Tape & Reel (TR) Power (Watts): 2W Tolerance: ±1% Features: High Voltage, Moisture Resistant, Pulse Withstanding Package / Case: 2512 (6432 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm) Composition: Thick Film Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: 2512 Height - Seated (Max): 0.030" (0.76mm) Resistance: 3 kOhms |
товар відсутній |
|
| PRFDD3-16F-BB000 | TE Connectivity |
Rocker Switches PWR ROCKER BLK ON-OFF-ON |
товар відсутній |
||
| PRFDD3-16F-BB0GW | TE Connectivity |
Rocker Switches PWR ROCKER BLK ON-OFF-ON |
товар відсутній |
| FDD3680 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 68W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Description: MOSFET N-CH 100V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Power Dissipation (Max): 68W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
товар відсутній
| FDD3682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD3682 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD3682 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3682 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3682-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| FDD3682-F085 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3682-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| FDD3706 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
товар відсутній
| FDD3706 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
товар відсутній
| FDD3860 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3860 |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD390N15A |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD390N15A |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD390N15ALZ |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD390N15ALZ |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 75 V
товар відсутній
| FDD390N15ALZ |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD390N15ALZ |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 150V 26A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3N40TF |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
товар відсутній
| FDD3N40TF |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
товар відсутній
| FDD3N40TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD3N40TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD3N50NZTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDD3N50NZTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD3N50NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товар відсутній
| FDD3N50NZTM |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FDD3N50NZTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товар відсутній
| AFDD-32/2/B/003-F |
|
Виробник: EATON ELECTRIC
Category: RCD Circuit Breakers
Description: Arc fault detector; Inom: 32A; Ires: 30mA; for DIN rail mounting
Type of protection: arc fault detector
Kind of circuit breaker: type F
Current rating: 32A
Residual current: 30mA
Mounting: for DIN rail mounting
IP rating: IP20
Cross section of connecting wires: 1...25mm2
Operating temperature: -25...40°C
Short circuit breaking capacity: 6kA
Mechanical durability: 20000 cycles
Electrical life: 4000 cycles
Characteristics: B
Manufacturer series: AFDD xPole Home
кількість в упаковці: 1 шт
Category: RCD Circuit Breakers
Description: Arc fault detector; Inom: 32A; Ires: 30mA; for DIN rail mounting
Type of protection: arc fault detector
Kind of circuit breaker: type F
Current rating: 32A
Residual current: 30mA
Mounting: for DIN rail mounting
IP rating: IP20
Cross section of connecting wires: 1...25mm2
Operating temperature: -25...40°C
Short circuit breaking capacity: 6kA
Mechanical durability: 20000 cycles
Electrical life: 4000 cycles
Characteristics: B
Manufacturer series: AFDD xPole Home
кількість в упаковці: 1 шт
товар відсутній
| AFDD-32/2/B/003-LI/A |
Виробник: EATON ELECTRIC
AFDD-32/2/B/003LIA RCD Circuit Breakers
AFDD-32/2/B/003LIA RCD Circuit Breakers
товар відсутній
| AFDD-32/2/C/003-LI/A |
Виробник: EATON ELECTRIC
AFDD-32/2/C/003LIA RCD Circuit Breakers
AFDD-32/2/C/003LIA RCD Circuit Breakers
товар відсутній
| HVCB0603FDD33M0 |
|
Виробник: Stackpole Electronics Inc
Description: RES 33M OHM 1% 0.06W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.06W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.79mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.020" (0.51mm)
Resistance: 33 mOhms
Description: RES 33M OHM 1% 0.06W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.06W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.79mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.020" (0.51mm)
Resistance: 33 mOhms
товар відсутній
| HVCB0603FDD33M0 |
|
Виробник: SEI Stackpole
Thick Film Resistors - SMD RES, HV, 0603, 33 Mohm, 1%, 100 ppm, 0.06W
Thick Film Resistors - SMD RES, HV, 0603, 33 Mohm, 1%, 100 ppm, 0.06W
товар відсутній
| HVCB1206FDD30M0 |
|
Виробник: Stackpole Electronics Inc
Description: RES 30M OHM 1% 1/3W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 30 mOhms
Description: RES 30M OHM 1% 1/3W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 30 mOhms
товар відсутній
| HVCB1206FDD30M0 |
|
Виробник: Stackpole Electronics Inc
Description: RES 30M OHM 1% 1/3W 1206
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 30 mOhms
Description: RES 30M OHM 1% 1/3W 1206
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 30 mOhms
товар відсутній
| HVCB1206FDD30M0 |
|
Виробник: SEI Stackpole
Thick Film Resistors - SMD RES, HV, 1206, 30 Mohm, 1%, 100 ppm, 0.33W
Thick Film Resistors - SMD RES, HV, 1206, 30 Mohm, 1%, 100 ppm, 0.33W
товар відсутній
| HVCB2512FDD30M0 |
|
Виробник: Stackpole Electronics Inc
Description: RES 30M OHM 1% 2W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.030" (0.76mm)
Part Status: Active
Resistance: 30 mOhms
Description: RES 30M OHM 1% 2W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.030" (0.76mm)
Part Status: Active
Resistance: 30 mOhms
товар відсутній
| HVCB2512FDD30M0 |
|
Виробник: SEI Stackpole
Thick Film Resistors - SMD RES, HV, 2512, 30 Mohm, 1%, 100 ppm, 2W
Thick Film Resistors - SMD RES, HV, 2512, 30 Mohm, 1%, 100 ppm, 2W
товар відсутній
| HVCB2512FDD3K00 |
|
Виробник: Stackpole Electronics Inc
Description: RES 3K OHM 1% 2W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 3 kOhms
Description: RES 3K OHM 1% 2W 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: High Voltage, Moisture Resistant, Pulse Withstanding
Package / Case: 2512 (6432 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.250" L x 0.125" W (6.35mm x 3.18mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 150°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.030" (0.76mm)
Resistance: 3 kOhms
товар відсутній