Результат пошуку "rf740" : > 180
Вид перегляду :
Мінімальне замовлення: 20
Мінімальне замовлення: 20
Мінімальне замовлення: 200
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| 740 | WXDH |
 Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DHкількість в упаковці: 10 шт |
на замовлення 200 шт: термін постачання 28-31 дні (днів) |
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| IRFI740G | Siliconix |
 N-MOSFET 5.7A 400V 40W 0.55Ω IRFI740G TIRF740 isoкількість в упаковці: 10 шт |
на замовлення 29 шт: термін постачання 28-31 дні (днів) |
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| YFW9435AS | YFW |
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c кількість в упаковці: 100 шт |
на замовлення 500 шт: термін постачання 28-31 дні (днів) |
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IRF740 Код товару: 18286 |
IR |
Транзистори > Польові N-канальні Uds,V: 400 V Idd,A: 10 А Rds(on), Ohm: 0,55 Ohm Монтаж: THT |
товар відсутній
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IRF7401PBF Код товару: 47551 |
IR |
Транзистори > Польові N-канальні Uds,V: 20 V Idd,A: 7 А Rds(on), Ohm: 0,022 Ohm Ciss, pF/Qg, nC: 1600/48 Монтаж: SMD |
товар відсутній
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IRF7403PBF Код товару: 22641 |
IR |
Транзистори > Польові N-канальні Корпус: SO-8 Uds,V: 30 V Idd,A: 8,5 A Rds(on), Ohm: 0,022 Ohm Ciss, pF/Qg, nC: 1200/57 Монтаж: SMD |
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IRF7404 Код товару: 7930 |
IR |
Транзистори > Польові P-канальні Корпус: SO-8 Uds,V: 20 V Id,A: 6,7 A Rds(on),Om: 0,04 Ohm Монтаж: SMD |
товар відсутній
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IRF7404PBF Код товару: 22642 |
IR |
Транзистори > Польові P-канальні Корпус: SO-8 Uds,V: 20 V Id,A: 6,7 A Rds(on),Om: 0,040 Ohm Ciss, pF/Qg, nC: 1500/50 Монтаж: SMD |
товар відсутній
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IRF7404TRPBF Код товару: 54654 |
Транзистори > Польові P-канальні |
товар відсутній
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IRF7406PBF Код товару: 26544 |
Транзистори > Польові N-канальні |
товар відсутній
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IRF740APBF Код товару: 32589 |
IR |
Транзистори > Польові N-канальні Корпус: TO-220 Uds,V: 400 V Idd,A: 10 A Rds(on), Ohm: 0,55 Ohm Ciss, pF/Qg, nC: 1030/36 Монтаж: THT |
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IRF740AS Код товару: 22643 |
IR |
Транзистори > Польові N-канальні Uds,V: 400 V Idd,A: 10 А Rds(on), Ohm: 0,55 Ohm Ciss, pF/Qg, nC: 1030/36 Монтаж: SMD |
товар відсутній
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IRF740ASPBF Код товару: 172391 |
Транзистори > Польові N-канальні Корпус: TO-263 Uds,V: 400 V Idd,A: 6,3 A Rds(on), Ohm: 0,55 Ohm Ciss, pF/Qg, nC: 1030/36 Монтаж: SMD |
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IRF740BPBF Код товару: 100642 |
Транзистори > Польові N-канальні |
товар відсутній
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IRF740LCPBF Код товару: 89068 |
Транзистори > Польові N-канальні |
товар відсутній
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IRF740PBF Код товару: 24032 |
IR |
Транзистори > Польові N-канальні Uds,V: 400 V Idd,A: 10 А Rds(on), Ohm: 0,55 Ohm Монтаж: THT |
товар відсутній
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IRF740PBF Код товару: 181684 |
Китай |
Транзистори > Польові N-канальні Корпус: TO-220 Uds,V: 400 V Idd,A: 10 A Rds(on), Ohm: 0,55 Ohm Ciss, pF/Qg, nC: 1400/63 Монтаж: THT |
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IRF740 | Vishay |
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
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IRF740 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
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IRF740 | STMicroelectronics |
Description: MOSFET N-CH 400V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
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| IRF7401 | IR - ASA only Supplier |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
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IRF7401PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 8.7A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
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| IRF7401TR | IR - ASA only Supplier |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
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IRF7401TR | Infineon Technologies |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
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IRF7401TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7401TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7401TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 8.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
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IRF7401TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
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IRF7401TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 8.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
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IRF7402PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 6.8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
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IRF7402PBF | Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube |
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IRF7402TR | Infineon Technologies |
Description: MOSFET N-CH 20V 6.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
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IRF7402TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
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IRF7402TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 6.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
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IRF7403PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
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IRF7403TR | Infineon Technologies |
Description: MOSFET N-CH 30V 8.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
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IRF7403TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7403TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7403TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
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IRF7404 | Infineon Technologies |
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R |
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IRF7404PBF | Infineon Technologies |
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube |
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IRF7404PBF | Infineon Technologies |
Description: MOSFET P-CH 20V 6.7A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
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IRF7404QPBF | Infineon Technologies |
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube |
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IRF7404QTRPBF | Infineon Technologies |
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R |
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IRF7404QTRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 6.7A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
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IRF7404TR | Infineon Technologies |
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R |
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IRF7404TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7406 | Infineon Technologies |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
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IRF7406GTRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRF7406GTRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRF7406GTRPBF | Infineon Technologies |
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R |
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| IRF7406HR | IR - ASA only Supplier |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
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IRF7406PBF | Infineon Technologies |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube |
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IRF7406PBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRF7406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7406TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRF7406TRPBF | Infineon Technologies |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
товар відсутній |
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IRF7406TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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IRF7406TRPBF | Infineon Technologies |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
товар відсутній |
| 740 |
|
Виробник: WXDH
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DH
кількість в упаковці: 10 шт
Transistor N-Channel MOSFET; 400V; 30V; 550mOhm; 10A; 100W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; 740 DONGHAI TIRF740 DH
кількість в упаковці: 10 шт
на замовлення 200 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 27.19 грн |
| IRFI740G | |
|
на замовлення 29 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 40.7 грн |
| YFW9435AS |
Виробник: YFW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c
кількість в упаковці: 100 шт
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; IRF7406TR; IRF7406; IRF7406TR; IRF9335; IRF7406-GURT; IRF7406 TIRF7406 c
кількість в упаковці: 100 шт
на замовлення 500 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 3.69 грн |
| IRF740 Код товару: 18286 |
|
Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Монтаж: THT
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Монтаж: THT
товар відсутній
| IRF7401PBF Код товару: 47551 |
|
Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 20 V
Idd,A: 7 А
Rds(on), Ohm: 0,022 Ohm
Ciss, pF/Qg, nC: 1600/48
Монтаж: SMD
Транзистори > Польові N-канальні
Uds,V: 20 V
Idd,A: 7 А
Rds(on), Ohm: 0,022 Ohm
Ciss, pF/Qg, nC: 1600/48
Монтаж: SMD
товар відсутній
| IRF7403PBF Код товару: 22641 |
|
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Виробник: IR
Транзистори > Польові N-канальні
Корпус: SO-8
Uds,V: 30 V
Idd,A: 8,5 A
Rds(on), Ohm: 0,022 Ohm
Ciss, pF/Qg, nC: 1200/57
Монтаж: SMD
Транзистори > Польові N-канальні
Корпус: SO-8
Uds,V: 30 V
Idd,A: 8,5 A
Rds(on), Ohm: 0,022 Ohm
Ciss, pF/Qg, nC: 1200/57
Монтаж: SMD
товар відсутній
| IRF7404 Код товару: 7930 |
|
Виробник: IR
Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 20 V
Id,A: 6,7 A
Rds(on),Om: 0,04 Ohm
Монтаж: SMD
Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 20 V
Id,A: 6,7 A
Rds(on),Om: 0,04 Ohm
Монтаж: SMD
товар відсутній
| IRF7404PBF Код товару: 22642 |
|
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Виробник: IR
Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 20 V
Id,A: 6,7 A
Rds(on),Om: 0,040 Ohm
Ciss, pF/Qg, nC: 1500/50
Монтаж: SMD
Транзистори > Польові P-канальні
Корпус: SO-8
Uds,V: 20 V
Id,A: 6,7 A
Rds(on),Om: 0,040 Ohm
Ciss, pF/Qg, nC: 1500/50
Монтаж: SMD
товар відсутній
| IRF740APBF Код товару: 32589 |
|
Виробник: IR
Транзистори > Польові N-канальні
Корпус: TO-220
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: THT
Транзистори > Польові N-канальні
Корпус: TO-220
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: THT
товар відсутній
| IRF740AS Код товару: 22643 |
|
Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: SMD
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: SMD
товар відсутній
| IRF740ASPBF Код товару: 172391 |
|
Транзистори > Польові N-канальні
Корпус: TO-263
Uds,V: 400 V
Idd,A: 6,3 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: SMD
Корпус: TO-263
Uds,V: 400 V
Idd,A: 6,3 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1030/36
Монтаж: SMD
товар відсутній
| IRF740PBF Код товару: 24032 |
|
Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Монтаж: THT
Транзистори > Польові N-канальні
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Монтаж: THT
товар відсутній
| IRF740PBF Код товару: 181684 |
|
Виробник: Китай
Транзистори > Польові N-канальні
Корпус: TO-220
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
Монтаж: THT
Транзистори > Польові N-канальні
Корпус: TO-220
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
Монтаж: THT
товар відсутній
| IRF740 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
| IRF740 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній
| IRF7401 | |
|
Виробник: IR - ASA only Supplier
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
товар відсутній
| IRF7401PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
товар відсутній
| IRF7401TR |
|
Виробник: IR - ASA only Supplier
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
товар відсутній
| IRF7401TR |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
товар відсутній
| IRF7401TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7401TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| IRF7401TRPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
товар відсутній
| IRF7401TRPBF | |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R
товар відсутній
| IRF7401TRPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: MOSFET N-CH 20V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
товар відсутній
| IRF7402PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
| IRF7402PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube
Trans MOSFET N-CH Si 20V 6.8A 8-Pin SOIC Tube
товар відсутній
| IRF7402TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
| IRF7402TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
| IRF7402TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 20V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
| IRF7403PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товар відсутній
| IRF7403TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товар відсутній
| IRF7403TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7403TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| IRF7403TRPBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
товар відсутній
| IRF7404PBF | |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC Tube
товар відсутній
| IRF7404PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товар відсутній
| IRF7404QPBF | |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N Tube
товар відсутній
| IRF7404QTRPBF |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH Si 20V 6.7A 8-Pin SOIC N T/R
товар відсутній
| IRF7404QTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.7A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET P-CH 20V 6.7A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товар відсутній
| IRF7404TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7406GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| IRF7406GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| IRF7406GTRPBF |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
товар відсутній
| IRF7406HR |
|
Виробник: IR - ASA only Supplier
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
товар відсутній
| IRF7406PBF | |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N Tube
товар відсутній
| IRF7406PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| IRF7406TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7406TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| IRF7406TRPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| IRF7406TRPBF | |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
товар відсутній
| IRF7406TRPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET P-CH 30V 5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| IRF7406TRPBF | |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
товар відсутній