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Мінімальне замовлення: 186
Мінімальне замовлення: 314
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|
| ULN2003AM/TR | HGSEMI |
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC кількість в упаковці: 186 шт |
на замовлення 146 шт: термін постачання 28-31 дні (днів) |
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| ULN2003AM/TR | HGSEMI |
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC кількість в упаковці: 314 шт |
на замовлення 314 шт: термін постачання 28-31 дні (днів) |
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S5U13781R01C100 Код товару: 129765 |
 Модульні елементи > Arduino та інші модульні елементи |
товар відсутній
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S5U1C17001H3100 Код товару: 162954 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
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LCWJNSH.EC-BQBS-5U8X-1 Код товару: 105516 |
OSRAM |
Світлодіоди > Світлодіоди видимого спектра SMD Колір: білий теплий Розмір: 3x1,4x1,2 mm Лінза: прозора Падіння напруги: 3 V Кут свічення: 110° |
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SS5U100 Код товару: 160696 |
Yangjie |
Діоди, діодні мости, стабілітрони > Діоди Шотткі Корпус: TO-277 Зворотня напруга, Vrrm: 100 V Прямий струм (per leg), If: 5 А Падіння напруги, Vf: 0,54 V Монтаж: SMD Імпульсний струм, Ifsm: 120 A |
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SS5U60 Код товару: 160697 |
Yangjie |
Діоди, діодні мости, стабілітрони > Діоди Шотткі Корпус: TO-277 Зворотня напруга, Vrrm: 60 V Прямий струм (per leg), If: 5 А Падіння напруги, Vf: 0,44 V Монтаж: SMD Імпульсний струм, Ifsm: 130 A |
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DS5U506M18040BB | SAMWHA |
Category: Supercapacitors Description: Capacitor: supercapacitor; Body dim: Ø18x40mm; 50F; ±20%; -40÷60°C Type of capacitor: supercapacitor Capacitor application: power factor correction Mounting: THT Capacitance: 50F Operating voltage: 2.7V DC Body dimensions: Ø18x40mm Terminal pitch: 7.5mm Tolerance: ±20% Operating temperature: -40...60°C Trade name: EDLC кількість в упаковці: 1200 шт |
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HS 5UK | TIETZSCH |
Category: Indicators, Voltage & Continuity Testers Description: Tester: electrical; LCD; VAC: 50÷5000V; 15÷1000Hz; VDC: 50÷7000V Type of tester: electrical Kind of display used: LCD DC voltage measuring range: 50...7000V IP rating: IP65 Standard equipment: probe with universal clamp; test probe x1 Measuring instrument features: polarization indicator Measurement: AC voltage; DC voltage Bandwidth for AC voltage measurements: 15...1000Hz AC voltage measuring range: 50...5000V кількість в упаковці: 1 шт |
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QS5U12TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U13TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U16TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U17TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U21TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U23TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U26TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U27TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U28TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 245mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U33TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U34TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 3A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±10V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| RDD05-03S5U | CHINFA ELECTRONICS | RDD05-03S5U DC/DC Converters |
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RDD05-12S5U | CHINFA ELECTRONICS |
Category: DC/DC Converters Description: Converter: DC/DC; 6W; Uin: 18÷75V; Uout: 12VDC; Iout: 500mA; 18g Operating temperature: -40...71°C Body dimensions: 31.8x20.3x10.2mm Case: 1,2"x0,8" Manufacturer series: RDD05 Power: 6W Insulation voltage: 1.5kV DC Output voltage: 12V DC Efficiency: 82% Type of converter: DC/DC Input voltage: 18...75V Output current: 500mA Protection: anti-overload OPP; short circuit protection SCP |
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SS5U100 | YANGJIE TECHNOLOGY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 5A; TO277; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: TO277 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1 шт |
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| SS5U45 | YANGJIE TECHNOLOGY | SS5U45-YAN SMD Schottky diodes |
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| SS5U60 | YANGJIE TECHNOLOGY | SS5U60-YAN SMD Schottky diodes |
товар відсутній |
| ULN2003AM/TR |
Виробник: HGSEMI
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC
кількість в упаковці: 186 шт
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC
кількість в упаковці: 186 шт
на замовлення 146 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 186+ | 9.64 грн |
| ULN2003AM/TR |
Виробник: HGSEMI
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC
кількість в упаковці: 314 шт
Darlington Transistor Arrays 5uA@50V 3V@2V,300mA 1.7V@350mA 0.93mA@3.85V 100uA@500uA -40°C~85°C ULN2003AM/TR ULN2003ad HGC
кількість в упаковці: 314 шт
на замовлення 314 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 314+ | 9.64 грн |
| S5U13781R01C100 Код товару: 129765 |
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товар відсутній
| LCWJNSH.EC-BQBS-5U8X-1 Код товару: 105516 |
Виробник: OSRAM
Світлодіоди > Світлодіоди видимого спектра SMD
Колір: білий теплий
Розмір: 3x1,4x1,2 mm
Лінза: прозора
Падіння напруги: 3 V
Кут свічення: 110°
Світлодіоди > Світлодіоди видимого спектра SMD
Колір: білий теплий
Розмір: 3x1,4x1,2 mm
Лінза: прозора
Падіння напруги: 3 V
Кут свічення: 110°
товар відсутній
| SS5U100 Код товару: 160696 |
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Виробник: Yangjie
Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO-277
Зворотня напруга, Vrrm: 100 V
Прямий струм (per leg), If: 5 А
Падіння напруги, Vf: 0,54 V
Монтаж: SMD
Імпульсний струм, Ifsm: 120 A
Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO-277
Зворотня напруга, Vrrm: 100 V
Прямий струм (per leg), If: 5 А
Падіння напруги, Vf: 0,54 V
Монтаж: SMD
Імпульсний струм, Ifsm: 120 A
товар відсутній
| SS5U60 Код товару: 160697 |
Виробник: Yangjie
Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO-277
Зворотня напруга, Vrrm: 60 V
Прямий струм (per leg), If: 5 А
Падіння напруги, Vf: 0,44 V
Монтаж: SMD
Імпульсний струм, Ifsm: 130 A
Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO-277
Зворотня напруга, Vrrm: 60 V
Прямий струм (per leg), If: 5 А
Падіння напруги, Vf: 0,44 V
Монтаж: SMD
Імпульсний струм, Ifsm: 130 A
товар відсутній
| DS5U506M18040BB |
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Виробник: SAMWHA
Category: Supercapacitors
Description: Capacitor: supercapacitor; Body dim: Ø18x40mm; 50F; ±20%; -40÷60°C
Type of capacitor: supercapacitor
Capacitor application: power factor correction
Mounting: THT
Capacitance: 50F
Operating voltage: 2.7V DC
Body dimensions: Ø18x40mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...60°C
Trade name: EDLC
кількість в упаковці: 1200 шт
Category: Supercapacitors
Description: Capacitor: supercapacitor; Body dim: Ø18x40mm; 50F; ±20%; -40÷60°C
Type of capacitor: supercapacitor
Capacitor application: power factor correction
Mounting: THT
Capacitance: 50F
Operating voltage: 2.7V DC
Body dimensions: Ø18x40mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Operating temperature: -40...60°C
Trade name: EDLC
кількість в упаковці: 1200 шт
товар відсутній
| HS 5UK |
Виробник: TIETZSCH
Category: Indicators, Voltage & Continuity Testers
Description: Tester: electrical; LCD; VAC: 50÷5000V; 15÷1000Hz; VDC: 50÷7000V
Type of tester: electrical
Kind of display used: LCD
DC voltage measuring range: 50...7000V
IP rating: IP65
Standard equipment: probe with universal clamp; test probe x1
Measuring instrument features: polarization indicator
Measurement: AC voltage; DC voltage
Bandwidth for AC voltage measurements: 15...1000Hz
AC voltage measuring range: 50...5000V
кількість в упаковці: 1 шт
Category: Indicators, Voltage & Continuity Testers
Description: Tester: electrical; LCD; VAC: 50÷5000V; 15÷1000Hz; VDC: 50÷7000V
Type of tester: electrical
Kind of display used: LCD
DC voltage measuring range: 50...7000V
IP rating: IP65
Standard equipment: probe with universal clamp; test probe x1
Measuring instrument features: polarization indicator
Measurement: AC voltage; DC voltage
Bandwidth for AC voltage measurements: 15...1000Hz
AC voltage measuring range: 50...5000V
кількість в упаковці: 1 шт
товар відсутній
| QS5U12TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U13TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U16TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U17TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U21TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U23TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U26TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U27TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U28TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U33TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U34TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| RDD05-12S5U |
Виробник: CHINFA ELECTRONICS
Category: DC/DC Converters
Description: Converter: DC/DC; 6W; Uin: 18÷75V; Uout: 12VDC; Iout: 500mA; 18g
Operating temperature: -40...71°C
Body dimensions: 31.8x20.3x10.2mm
Case: 1,2"x0,8"
Manufacturer series: RDD05
Power: 6W
Insulation voltage: 1.5kV DC
Output voltage: 12V DC
Efficiency: 82%
Type of converter: DC/DC
Input voltage: 18...75V
Output current: 500mA
Protection: anti-overload OPP; short circuit protection SCP
Category: DC/DC Converters
Description: Converter: DC/DC; 6W; Uin: 18÷75V; Uout: 12VDC; Iout: 500mA; 18g
Operating temperature: -40...71°C
Body dimensions: 31.8x20.3x10.2mm
Case: 1,2"x0,8"
Manufacturer series: RDD05
Power: 6W
Insulation voltage: 1.5kV DC
Output voltage: 12V DC
Efficiency: 82%
Type of converter: DC/DC
Input voltage: 18...75V
Output current: 500mA
Protection: anti-overload OPP; short circuit protection SCP
товар відсутній
| SS5U100 |
|
Виробник: YANGJIE TECHNOLOGY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 5A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 5A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
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