Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (289) > Сторінка 2 з 5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD10PJX65L2S | STARPOWER SEMICONDUCTOR | GD10PJX65L2S IGBT modules |
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| GD10PJY120F1S | STARPOWER SEMICONDUCTOR | GD10PJY120F1S IGBT modules |
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| GD10PJY120F4S | STARPOWER SEMICONDUCTOR | GD10PJY120F4S IGBT modules |
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| GD10PJY120L2S | STARPOWER SEMICONDUCTOR | GD10PJY120L2S IGBT modules |
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| GD1200HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A Pulsed collector current: 2.4kA Collector current: 1.2kA Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C3 130mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD1200HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A Pulsed collector current: 2.4kA Collector current: 1.2kA Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C3 130mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 10 шт |
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| GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Case: C3 130mm Electrical mounting: screw Topology: IGBT x2 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 1.2kA Pulsed collector current: 2.4kA Technology: Trench FS IGBT |
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| GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Case: C3 130mm Electrical mounting: screw Topology: IGBT x2 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 1.2kA Pulsed collector current: 2.4kA Technology: Trench FS IGBT кількість в упаковці: 8 шт |
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| GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Case: P2.0 Technology: Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 2.8kA Max. off-state voltage: 1.7kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.4kA Topology: IGBT half-bridge |
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| GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Case: P2.0 Technology: Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 2.8kA Max. off-state voltage: 1.7kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.4kA Topology: IGBT half-bridge кількість в упаковці: 8 шт |
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| GD1400HFY120P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Pulsed collector current: 2.8kA Collector current: 1.4kA Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: P2.0 Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD1400HFY120P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Pulsed collector current: 2.8kA Collector current: 1.4kA Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: P2.0 Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 8 шт |
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| GD150FFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: C6 62mm Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A |
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| GD150FFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: C6 62mm Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A кількість в упаковці: 10 шт |
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| GD150FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor |
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| GD150FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor кількість в упаковці: 10 шт |
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| GD150HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.2kV |
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| GD150HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.2kV кількість в упаковці: 12 шт |
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| GD150HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.7kV |
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| GD150HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.7kV кількість в упаковці: 12 шт |
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| GD150HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Max. off-state voltage: 650V |
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| GD150HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Max. off-state voltage: 650V кількість в упаковці: 24 шт |
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| GD150HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C1 34mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD150HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C1 34mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 24 шт |
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| GD150HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD150HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 60 шт |
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| GD150HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C8 48mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD150HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C8 48mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 16 шт |
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| GD150HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 150A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 300A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT |
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| GD150HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 150A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 300A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 10 шт |
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| GD150MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Type of module: IGBT Technology: Trench FS IGBT Topology: NTC thermistor; three-level inverter; single-phase Case: L3.1 Max. off-state voltage: 650V |
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| GD150MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Type of module: IGBT Technology: Trench FS IGBT Topology: NTC thermistor; three-level inverter; single-phase Case: L3.1 Max. off-state voltage: 650V кількість в упаковці: 16 шт |
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| GD150PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C6 62mm Max. off-state voltage: 1.2kV |
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| GD150PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C6 62mm Max. off-state voltage: 1.2kV кількість в упаковці: 10 шт |
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| GD15PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: F1.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V |
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| GD15PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: F1.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
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| GD15PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V |
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| GD15PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
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| GD15PJY120F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F1.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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| GD15PJY120F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F1.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
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| GD15PJY120F2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Type of module: IGBT Semiconductor structure: diode/transistor Case: F2.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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| GD15PJY120F2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Type of module: IGBT Semiconductor structure: diode/transistor Case: F2.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V кількість в упаковці: 25 шт |
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| GD15PJY120F4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F4.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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| GD15PJY120F4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F4.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
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| GD15PJY120F5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F5.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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| GD15PJY120F5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Type of module: IGBT Semiconductor structure: diode/transistor Case: F5.1 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V кількість в упаковці: 25 шт |
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| GD15PJY120L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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| GD15PJY120L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V кількість в упаковці: 1 шт |
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| GD1600SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x2 Case: C3 130mm Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.6kA Pulsed collector current: 3.2kA |
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| GD1600SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x2 Case: C3 130mm Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.6kA Pulsed collector current: 3.2kA кількість в упаковці: 8 шт |
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| GD200FFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 650V |
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| GD200FFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 650V кількість в упаковці: 10 шт |
товар відсутній |
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| GD200FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor |
товар відсутній |
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| GD200FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor кількість в упаковці: 10 шт |
товар відсутній |
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| GD200HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.2kV |
товар відсутній |
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| GD200HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
товар відсутній |
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| GD200HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.7kV |
товар відсутній |
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| GD200HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 1.7kV кількість в упаковці: 12 шт |
товар відсутній |
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| GD200HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Max. off-state voltage: 650V |
товар відсутній |
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| GD200HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Max. off-state voltage: 650V кількість в упаковці: 24 шт |
товар відсутній |
| GD1200HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD1200HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
товар відсутній
| GD1200SGX170C3SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C3 130mm
Electrical mounting: screw
Topology: IGBT x2
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C3 130mm
Electrical mounting: screw
Topology: IGBT x2
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
товар відсутній
| GD1200SGX170C3SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C3 130mm
Electrical mounting: screw
Topology: IGBT x2
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C3 130mm
Electrical mounting: screw
Topology: IGBT x2
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
кількість в упаковці: 8 шт
товар відсутній
| GD1400HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Case: P2.0
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 2.8kA
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Case: P2.0
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 2.8kA
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Topology: IGBT half-bridge
товар відсутній
| GD1400HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Case: P2.0
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 2.8kA
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Case: P2.0
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 2.8kA
Max. off-state voltage: 1.7kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
товар відсутній
| GD1400HFY120P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P2.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P2.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD1400HFY120P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P2.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: P2.0
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
товар відсутній
| GD150FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: C6 62mm
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: C6 62mm
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
товар відсутній
| GD150FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: C6 62mm
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: C6 62mm
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
кількість в упаковці: 10 шт
товар відсутній
| GD150FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| GD150FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
товар відсутній
| GD150HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
товар відсутній
| GD150HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 12 шт
товар відсутній
| GD150HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
товар відсутній
| GD150HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
кількість в упаковці: 12 шт
товар відсутній
| GD150HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
товар відсутній
| GD150HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
кількість в упаковці: 24 шт
товар відсутній
| GD150HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD150HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 24 шт
товар відсутній
| GD150HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD150HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 60 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 60 шт
товар відсутній
| GD150HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C8 48mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C8 48mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD150HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C8 48mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C8 48mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 16 шт
товар відсутній
| GD150HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| GD150HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 150A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт
товар відсутній
| GD150MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Max. off-state voltage: 650V
товар відсутній
| GD150MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Max. off-state voltage: 650V
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Max. off-state voltage: 650V
кількість в упаковці: 16 шт
товар відсутній
| GD150PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
товар відсутній
| GD150PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 10 шт
товар відсутній
| GD15PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| GD15PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| GD15PJY120F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJY120F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| GD15PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
товар відсутній
| GD15PJY120F4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F4.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F4.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJY120F4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F4.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F4.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| GD15PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F5.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 25 шт
товар відсутній
| GD15PJY120L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
товар відсутній
| GD15PJY120L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| GD1600SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
товар відсутній
| GD1600SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
кількість в упаковці: 8 шт
товар відсутній
| GD200FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
товар відсутній
| GD200FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
кількість в упаковці: 10 шт
товар відсутній
| GD200FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| GD200FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
товар відсутній
| GD200HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
товар відсутній
| GD200HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
| GD200HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
товар відсутній
| GD200HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 1.7kV
кількість в упаковці: 12 шт
товар відсутній
| GD200HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
товар відсутній
| GD200HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Max. off-state voltage: 650V
кількість в упаковці: 24 шт
товар відсутній