Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36851) > Сторінка 178 з 615
Фото | Назва | Виробник | Інформація |
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MB4S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE 1-PH TO269AA/MINIDIL 400V Packaging: Tube Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TO-269AA (MBS) Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 6152 шт: термін постачання 21-31 дні (днів) |
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1N4001GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 10932 шт: термін постачання 21-31 дні (днів) |
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1N4002-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 3814 шт: термін постачання 21-31 дні (днів) |
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1N4002GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 37888 шт: термін постачання 21-31 дні (днів) |
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1N4003GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7523 шт: термін постачання 21-31 дні (днів) |
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1N4006-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 2396 шт: термін постачання 21-31 дні (днів) |
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1N4006GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 17219 шт: термін постачання 21-31 дні (днів) |
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1N4007E-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 132460 шт: термін постачання 21-31 дні (днів) |
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1N4246GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 20148 шт: термін постачання 21-31 дні (днів) |
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1N4247GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL |
товар відсутній |
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1N4384GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
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1N4385GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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1N4933GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товар відсутній |
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1N4934GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 8441 шт: термін постачання 21-31 дні (днів) |
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1N5392-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1.5A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 14154 шт: термін постачання 21-31 дні (днів) |
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1N5393-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE DO15 200V 1.5A 175C Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 29252 шт: термін постачання 21-31 дні (днів) |
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1N5395-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 22753 шт: термін постачання 21-31 дні (днів) |
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1N5403-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 10065 шт: термін постачання 21-31 дні (днів) |
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1N5408-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 973 шт: термін постачання 21-31 дні (днів) |
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1N5617GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AC |
на замовлення 12232 шт: термін постачання 21-31 дні (днів) |
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1N5620GPHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AC |
товар відсутній |
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1N5621GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AC |
товар відсутній |
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1N5623GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 1000 V |
товар відсутній |
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1N5822-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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1N6481-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 45175 шт: термін постачання 21-31 дні (днів) |
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1N6482-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 7510 шт: термін постачання 21-31 дні (днів) |
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1N6484-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 6596 шт: термін постачання 21-31 дні (днів) |
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31GF6-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 3389 шт: термін постачання 21-31 дні (днів) |
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B230LA-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 6904 шт: термін постачання 21-31 дні (днів) |
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BA157-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 42024 шт: термін постачання 21-31 дні (днів) |
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BA158-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 24598 шт: термін постачання 21-31 дні (днів) |
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BA159-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 46609 шт: термін постачання 21-31 дні (днів) |
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BY228GP-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V |
на замовлення 6742 шт: термін постачання 21-31 дні (днів) |
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BY500-400-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: 125°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товар відсутній |
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BYG10D-E3/TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 200V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 13310 шт: термін постачання 21-31 дні (днів) |
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BYG22DHE3/TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: AEC-Q101 |
товар відсутній |
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BYM10-400-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Avalanche Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 14977 шт: термін постачання 21-31 дні (днів) |
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BYM11-600-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 6011 шт: термін постачання 21-31 дні (днів) |
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BYM12-200-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 23935 шт: термін постачання 21-31 дні (днів) |
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BYM13-30-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A GL41 Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (GL41) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 4346 шт: термін постачання 21-31 дні (днів) |
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BYM13-60-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A GL41 Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (GL41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 46591 шт: термін постачання 21-31 дні (днів) |
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BYS10-25-E3/TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 25 V |
на замовлення 7596 шт: термін постачання 21-31 дні (днів) |
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BYS10-45-E3/TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
на замовлення 36857 шт: термін постачання 21-31 дні (днів) |
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BYV26DGP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 3630 шт: термін постачання 21-31 дні (днів) |
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EDF1AS-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 1A DFS Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFS Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 9369 шт: термін постачання 21-31 дні (днів) |
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EGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA |
на замовлення 8216 шт: термін постачання 21-31 дні (днів) |
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EGP10D-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 11050 шт: термін постачання 21-31 дні (днів) |
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EGP20B-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 2637 шт: термін постачання 21-31 дні (днів) |
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EGP20G-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 10542 шт: термін постачання 21-31 дні (днів) |
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ES1C-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 3858 шт: термін постачання 21-31 дні (днів) |
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ES1D-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 16869 шт: термін постачання 21-31 дні (днів) |
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FESB16GT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 16A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1935 шт: термін постачання 21-31 дні (днів) |
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GI250-4-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 4KV 250MA DO204 |
товар відсутній |
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GI501-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 5503 шт: термін постачання 21-31 дні (днів) |
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GI750-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 6A P600 Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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GI821-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 5A P600 |
товар відсутній |
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GI851-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD |
товар відсутній |
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GL34A-E3/98 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 500MA DO213AA Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 5142 шт: термін постачання 21-31 дні (днів) |
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GL34D-E3/98 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 500MA DO213AA Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 9459 шт: термін постачання 21-31 дні (днів) |
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GL41B-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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MB4S-E3/45 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1-PH TO269AA/MINIDIL 400V
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE 1-PH TO269AA/MINIDIL 400V
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 6152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.59 грн |
11+ | 27.53 грн |
100+ | 19.14 грн |
500+ | 14.02 грн |
1000+ | 11.4 грн |
2000+ | 10.19 грн |
5000+ | 9.51 грн |
1N4001GP-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 10932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.83 грн |
10+ | 29.19 грн |
100+ | 20.29 грн |
500+ | 14.87 грн |
1000+ | 12.08 грн |
1N4002-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3814 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.17 грн |
25+ | 11.65 грн |
100+ | 5.68 грн |
500+ | 4.45 грн |
1000+ | 3.09 грн |
1N4002GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 37888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.89 грн |
15+ | 19.34 грн |
100+ | 13.41 грн |
500+ | 9.82 грн |
1000+ | 8.52 грн |
1N4003GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7523 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.59 грн |
11+ | 27.46 грн |
100+ | 19.07 грн |
500+ | 13.97 грн |
1000+ | 11.36 грн |
2000+ | 10.15 грн |
1N4006-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 2396 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.11 грн |
15+ | 19.91 грн |
100+ | 10.05 грн |
500+ | 7.69 грн |
1000+ | 5.71 грн |
1N4006GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 17219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.59 грн |
11+ | 27.46 грн |
100+ | 19.07 грн |
500+ | 13.97 грн |
1000+ | 11.36 грн |
2000+ | 10.15 грн |
1N4007E-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 132460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.14 грн |
19+ | 15.96 грн |
100+ | 8.04 грн |
500+ | 6.69 грн |
1000+ | 5.2 грн |
2000+ | 4.66 грн |
1N4246GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 20148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.34 грн |
11+ | 27.82 грн |
100+ | 19.32 грн |
500+ | 14.16 грн |
1000+ | 11.51 грн |
2000+ | 10.29 грн |
1N4247GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Description: DIODE GEN PURP 600V 1A DO204AL
товар відсутній
1N4384GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
1N4385GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.55 грн |
10+ | 34.87 грн |
1N4933GP-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4934GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 8441 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.34 грн |
11+ | 28.04 грн |
100+ | 19.51 грн |
500+ | 14.3 грн |
1000+ | 11.62 грн |
2000+ | 10.39 грн |
1N5392-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1.5A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 14154 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.38 грн |
18+ | 16.68 грн |
100+ | 8.14 грн |
500+ | 6.37 грн |
1000+ | 4.43 грн |
2000+ | 3.84 грн |
1N5393-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE DO15 200V 1.5A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE DO15 200V 1.5A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 29252 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.17 грн |
25+ | 11.72 грн |
100+ | 5.72 грн |
500+ | 4.48 грн |
1000+ | 3.11 грн |
2000+ | 2.7 грн |
1N5395-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 22753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.38 грн |
18+ | 16.68 грн |
100+ | 8.14 грн |
500+ | 6.37 грн |
1000+ | 4.43 грн |
2000+ | 3.84 грн |
1N5403-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 10065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.4 грн |
16+ | 18.48 грн |
100+ | 12.87 грн |
500+ | 9.43 грн |
1N5408-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.83 грн |
11+ | 26.38 грн |
100+ | 15.84 грн |
500+ | 13.76 грн |
1N5617GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AC
Description: DIODE GEN PURP 400V 1A DO204AC
на замовлення 12232 шт:
термін постачання 21-31 дні (днів)1N5620GPHE3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Description: DIODE GEN PURP 800V 1A DO204AC
товар відсутній
1N5621GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Description: DIODE GEN PURP 800V 1A DO204AC
товар відсутній
1N5623GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 1000 V
товар відсутній
1N5822-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.86 грн |
12+ | 24.95 грн |
100+ | 17.36 грн |
1N6481-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 45175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.86 грн |
13+ | 22.5 грн |
100+ | 13.49 грн |
500+ | 11.73 грн |
1N6482-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 7510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.86 грн |
13+ | 22.5 грн |
100+ | 13.49 грн |
500+ | 11.73 грн |
1N6484-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 6596 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.86 грн |
13+ | 22.5 грн |
100+ | 13.49 грн |
500+ | 11.73 грн |
31GF6-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 3389 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53 грн |
10+ | 44.14 грн |
100+ | 30.55 грн |
500+ | 23.95 грн |
B230LA-E3/61T |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 6904 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.11 грн |
14+ | 21.85 грн |
100+ | 13.13 грн |
500+ | 11.41 грн |
BA157-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 42024 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.14 грн |
19+ | 15.6 грн |
100+ | 7.88 грн |
500+ | 6.03 грн |
1000+ | 4.48 грн |
2000+ | 3.77 грн |
BA158-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 24598 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.4 грн |
19+ | 15.38 грн |
100+ | 7.77 грн |
500+ | 5.95 грн |
1000+ | 4.41 грн |
2000+ | 3.71 грн |
BA159-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 46609 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.14 грн |
19+ | 15.6 грн |
100+ | 7.88 грн |
500+ | 6.03 грн |
1000+ | 4.48 грн |
2000+ | 3.77 грн |
BY228GP-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 2.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
Description: DIODE GP 1.5KV 2.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
на замовлення 6742 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.01 грн |
10+ | 85.04 грн |
100+ | 67.68 грн |
500+ | 53.75 грн |
BY500-400-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BYG10D-E3/TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 13310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.13 грн |
15+ | 19.48 грн |
100+ | 11.71 грн |
500+ | 10.18 грн |
BYG22DHE3/TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
BYM10-400-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 14977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
15+ | 20.27 грн |
100+ | 12.17 грн |
500+ | 10.57 грн |
BYM11-600-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6011 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.37 грн |
14+ | 21.57 грн |
100+ | 12.93 грн |
500+ | 11.24 грн |
BYM12-200-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 23935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
13+ | 22.57 грн |
100+ | 15.71 грн |
500+ | 11.51 грн |
BYM13-30-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A GL41
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A GL41
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 4346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.58 грн |
10+ | 29.98 грн |
100+ | 20.82 грн |
500+ | 15.26 грн |
BYM13-60-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A GL41
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A GL41
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 46591 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.58 грн |
10+ | 29.98 грн |
100+ | 20.82 грн |
500+ | 15.26 грн |
BYS10-25-E3/TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
на замовлення 7596 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.37 грн |
15+ | 19.55 грн |
100+ | 9.85 грн |
500+ | 8.19 грн |
BYS10-45-E3/TR3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY 45V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
на замовлення 36857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.11 грн |
15+ | 19.77 грн |
100+ | 9.98 грн |
500+ | 8.3 грн |
1000+ | 6.46 грн |
2000+ | 5.78 грн |
BYV26DGP-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 3630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
13+ | 23.08 грн |
100+ | 16.04 грн |
500+ | 11.75 грн |
1000+ | 9.55 грн |
EDF1AS-E3/77 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 9369 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 83.61 грн |
10+ | 65.71 грн |
100+ | 51.12 грн |
500+ | 40.67 грн |
EGF1A-E3/67A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Description: DIODE GEN PURP 50V 1A DO214BA
на замовлення 8216 шт:
термін постачання 21-31 дні (днів)EGP10D-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 11050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.34 грн |
11+ | 27.82 грн |
100+ | 19.32 грн |
500+ | 14.16 грн |
1000+ | 11.51 грн |
2000+ | 10.29 грн |
EGP20B-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2637 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.72 грн |
10+ | 49.82 грн |
100+ | 34.47 грн |
500+ | 27.03 грн |
1000+ | 23 грн |
2000+ | 20.49 грн |
EGP20G-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10542 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.72 грн |
10+ | 49.82 грн |
100+ | 34.47 грн |
500+ | 27.03 грн |
1000+ | 23 грн |
2000+ | 20.49 грн |
ES1C-E3/61T |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
16+ | 18.91 грн |
100+ | 9.55 грн |
500+ | 7.94 грн |
ES1D-E3/5AT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 16869 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
16+ | 18.91 грн |
100+ | 9.55 грн |
500+ | 7.94 грн |
1000+ | 6.18 грн |
2000+ | 5.53 грн |
FESB16GT-E3/81 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.95 грн |
10+ | 94.32 грн |
100+ | 75.11 грн |
GI250-4-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 4KV 250MA DO204
Description: DIODE GEN PURP 4KV 250MA DO204
товар відсутній
GI501-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 5503 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.35 грн |
12+ | 25.95 грн |
100+ | 19.4 грн |
500+ | 14.3 грн |
GI750-E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.93 грн |
10+ | 53.77 грн |
100+ | 41.81 грн |
GI821-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 5A P600
Description: DIODE GEN PURP 100V 5A P600
товар відсутній
GI851-E3/54 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO201AD
Description: DIODE GEN PURP 100V 3A DO201AD
товар відсутній
GL34A-E3/98 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 5142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 19.41 грн |
18+ | 16.32 грн |
100+ | 11.34 грн |
500+ | 8.3 грн |
1000+ | 7.2 грн |
GL34D-E3/98 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GP 200V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 9459 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.62 грн |
13+ | 23.15 грн |
100+ | 16.12 грн |
500+ | 11.81 грн |
1000+ | 9.6 грн |
GL41B-E3/96 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.34 грн |
11+ | 28.04 грн |
100+ | 19.45 грн |
500+ | 14.25 грн |