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C3D10065E C3D10065E Wolfspeed(CREE) C3D10065E-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
товар відсутній
C3D10065E C3D10065E Wolfspeed(CREE) C3D10065E-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D10065I C3D10065I Wolfspeed(CREE) C3D10065I-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
2+233.24 грн
3+ 208.96 грн
Мінімальне замовлення: 2
C3D10065I C3D10065I Wolfspeed(CREE) C3D10065I-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 7-14 дні (днів)
1+279.88 грн
3+ 260.4 грн
C3D12065A C3D12065A Wolfspeed(CREE) C3D12065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
товар відсутній
C3D12065A C3D12065A Wolfspeed(CREE) C3D12065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D16060D C3D16060D Wolfspeed(CREE) C3D16060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+389.72 грн
3+ 319.67 грн
4+ 262.94 грн
9+ 248.4 грн
C3D16060D C3D16060D Wolfspeed(CREE) C3D16060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 250 шт:
термін постачання 7-14 дні (днів)
1+467.66 грн
3+ 398.36 грн
4+ 315.52 грн
9+ 298.09 грн
C3D16065D C3D16065D Wolfspeed(CREE) C3D16065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D C3D16065D Wolfspeed(CREE) C3D16065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 600 шт
товар відсутній
C3D16065D1 C3D16065D1 Wolfspeed(CREE) c3d16065d1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D1 C3D16065D1 Wolfspeed(CREE) c3d16065d1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
C3D20060D C3D20060D Wolfspeed(CREE) C3D20060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
1+1043.23 грн
2+ 707.16 грн
3+ 706.47 грн
4+ 668.41 грн
C3D20060D C3D20060D Wolfspeed(CREE) C3D20060D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
1+1251.87 грн
2+ 881.23 грн
3+ 847.76 грн
4+ 802.09 грн
C3D20065D C3D20065D Wolfspeed(CREE) C3D20065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
1+480.63 грн
3+ 327.98 грн
7+ 309.99 грн
C3D20065D C3D20065D Wolfspeed(CREE) C3D20065D-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 7-14 дні (днів)
1+576.75 грн
3+ 408.71 грн
7+ 371.98 грн
C3D25170H C3D25170H Wolfspeed(CREE) C3D25170H-DTE.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3743.69 грн
C3D30065D Wolfspeed(CREE) c3d30065d.pdf C3D30065D THT Schottky diodes
товар відсутній
C3M0015065K Wolfspeed(CREE) C3M0015065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0015065K Wolfspeed(CREE) C3M0015065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0016120K Wolfspeed(CREE) c3m0016120k.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0016120K Wolfspeed(CREE) c3m0016120k.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0030090K C3M0030090K Wolfspeed(CREE) C3M0030090K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
товар відсутній
C3M0030090K C3M0030090K Wolfspeed(CREE) C3M0030090K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
C3M0060065D Wolfspeed(CREE) C3M0060065D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
товар відсутній
C3M0060065D Wolfspeed(CREE) C3M0060065D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0060065J Wolfspeed(CREE) C3M0060065J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065J Wolfspeed(CREE) C3M0060065J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0060065K Wolfspeed(CREE) C3M0060065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065K Wolfspeed(CREE) C3M0060065K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0065090D C3M0065090D Wolfspeed(CREE) C3M0065090D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+1057.38 грн
3+ 928.58 грн
30+ 889.83 грн
C3M0065090D C3M0065090D Wolfspeed(CREE) C3M0065090D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 7-14 дні (днів)
1+1268.86 грн
3+ 1157.15 грн
30+ 1067.79 грн
C3M0065090J C3M0065090J Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
1+937.41 грн
3+ 822.71 грн
C3M0065090J C3M0065090J Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 7-14 дні (днів)
1+1124.9 грн
3+ 1025.22 грн
C3M0065090J-TR C3M0065090J-TR Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
товар відсутній
C3M0065090J-TR C3M0065090J-TR Wolfspeed(CREE) C3M0065090J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
C3M0065100J C3M0065100J Wolfspeed(CREE) c3m0065100j.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
товар відсутній
C3M0065100J C3M0065100J Wolfspeed(CREE) c3m0065100j.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
кількість в упаковці: 1 шт
товар відсутній
C3M0065100K C3M0065100K Wolfspeed(CREE) C3M0065100K-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
товар відсутній
C3M0065100K C3M0065100K Wolfspeed(CREE) C3M0065100K-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
C3M0075120D C3M0075120D Wolfspeed(CREE) c3m0075120d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+1235.48 грн
2+ 772.2 грн
3+ 729.99 грн
C3M0075120D C3M0075120D Wolfspeed(CREE) c3m0075120d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)
1+1482.57 грн
2+ 962.28 грн
3+ 875.99 грн
C3M0075120J C3M0075120J Wolfspeed(CREE) C3M0075120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120J C3M0075120J Wolfspeed(CREE) C3M0075120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0075120K C3M0075120K Wolfspeed(CREE) C3M0075120K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120K C3M0075120K Wolfspeed(CREE) C3M0075120K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0120090D C3M0120090D Wolfspeed(CREE) C3M0120090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
1+773.48 грн
2+ 550.78 грн
5+ 520.34 грн
C3M0120090D C3M0120090D Wolfspeed(CREE) C3M0120090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 118 шт:
термін постачання 7-14 дні (днів)
1+928.17 грн
2+ 686.36 грн
5+ 624.4 грн
C3M0120090J C3M0120090J Wolfspeed(CREE) C3M0120090J-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
1+813.72 грн
2+ 573.61 грн
4+ 542.48 грн
10+ 541.79 грн
C3M0120090J C3M0120090J Wolfspeed(CREE) C3M0120090J-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 7-14 дні (днів)
1+976.46 грн
2+ 714.81 грн
4+ 650.97 грн
10+ 650.14 грн
C3M0120100J C3M0120100J Wolfspeed(CREE) C3M0120100J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+781.67 грн
2+ 591.6 грн
4+ 559.78 грн
10+ 559.08 грн
C3M0120100J C3M0120100J Wolfspeed(CREE) C3M0120100J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
1+938.01 грн
2+ 737.23 грн
4+ 671.73 грн
10+ 670.9 грн
C3M0120100K C3M0120100K Wolfspeed(CREE) C3M0120100K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
товар відсутній
C3M0120100K C3M0120100K Wolfspeed(CREE) C3M0120100K.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
кількість в упаковці: 1 шт
товар відсутній
C3M0160120D Wolfspeed(CREE) C3M0160120D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
товар відсутній
C3M0160120D Wolfspeed(CREE) C3M0160120D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0160120J Wolfspeed(CREE) C3M0160120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0160120J Wolfspeed(CREE) C3M0160120J.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0280090D C3M0280090D Wolfspeed(CREE) C3M0280090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
2+346.5 грн
3+ 285.08 грн
4+ 266.4 грн
9+ 251.86 грн
30+ 242.18 грн
Мінімальне замовлення: 2
C3M0280090D C3M0280090D Wolfspeed(CREE) C3M0280090D-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
1+415.8 грн
3+ 355.25 грн
4+ 319.67 грн
9+ 302.24 грн
30+ 290.61 грн
C3D10065E C3D10065E-DTE.PDF
C3D10065E
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
товар відсутній
C3D10065E C3D10065E-DTE.PDF
C3D10065E
Виробник: Wolfspeed(CREE)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252-2; 150W; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 150W
Semiconductor structure: single diode
Case: TO252-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D10065I C3D10065I-DTE.PDF
C3D10065I
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+233.24 грн
3+ 208.96 грн
Мінімальне замовлення: 2
C3D10065I C3D10065I-DTE.PDF
C3D10065I
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 60W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 60W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+279.88 грн
3+ 260.4 грн
C3D12065A C3D12065A.pdf
C3D12065A
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
товар відсутній
C3D12065A C3D12065A.pdf
C3D12065A
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 62W; TO220-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Manufacturer series: C3D
кількість в упаковці: 1 шт
товар відсутній
C3D16060D C3D16060D-DTE.PDF
C3D16060D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+389.72 грн
3+ 319.67 грн
4+ 262.94 грн
9+ 248.4 грн
C3D16060D C3D16060D-DTE.PDF
C3D16060D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 250 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+467.66 грн
3+ 398.36 грн
4+ 315.52 грн
9+ 298.09 грн
C3D16065D C3D16065D-DTE.PDF
C3D16065D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D C3D16065D-DTE.PDF
C3D16065D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; 100W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 8A x2
Semiconductor structure: common cathode; double
Power dissipation: 100W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 600 шт
товар відсутній
C3D16065D1 c3d16065d1.pdf
C3D16065D1
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
товар відсутній
C3D16065D1 c3d16065d1.pdf
C3D16065D1
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 75W; TO247-3; C3D
Mounting: THT
Manufacturer series: C3D
Load current: 16A
Semiconductor structure: single diode
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Case: TO247-3
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
C3D20060D C3D20060D-DTE.PDF
C3D20060D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1043.23 грн
2+ 707.16 грн
3+ 706.47 грн
4+ 668.41 грн
C3D20060D C3D20060D-DTE.PDF
C3D20060D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1251.87 грн
2+ 881.23 грн
3+ 847.76 грн
4+ 802.09 грн
C3D20065D C3D20065D-DTE.PDF
C3D20065D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+480.63 грн
3+ 327.98 грн
7+ 309.99 грн
C3D20065D C3D20065D-DTE.PDF
C3D20065D
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 250W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Power dissipation: 250W
Semiconductor structure: common cathode; double
Case: TO247-3
Manufacturer series: C3D
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+576.75 грн
3+ 408.71 грн
7+ 371.98 грн
C3D25170H C3D25170H-DTE.PDF
C3D25170H
Виробник: Wolfspeed(CREE)
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; 377W; TO247-2; C3D
Type of diode: Schottky rectifying
Technology: SiC; Z-Rec®
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Power dissipation: 377W
Semiconductor structure: single diode
Case: TO247-2
Manufacturer series: C3D
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3743.69 грн
C3D30065D c3d30065d.pdf
Виробник: Wolfspeed(CREE)
C3D30065D THT Schottky diodes
товар відсутній
C3M0015065K C3M0015065K.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0015065K C3M0015065K.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 96A
Pulsed drain current: 418A
Power dissipation: 416W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 188nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0016120K c3m0016120k.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0016120K c3m0016120k.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 556W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 556W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 28.8mΩ
Mounting: THT
Gate charge: 211nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0030090K C3M0030090K.pdf
C3M0030090K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
товар відсутній
C3M0030090K C3M0030090K.pdf
C3M0030090K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 40A; 149W; TO247-4; 62ns
Reverse recovery time: 62ns
Drain-source voltage: 900V
Drain current: 40A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 149W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 87nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
C3M0060065D C3M0060065D.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
товар відсутній
C3M0060065D C3M0060065D.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0060065J C3M0060065J.pdf
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065J C3M0060065J.pdf
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 99A; 136W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 99A
Power dissipation: 136W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0060065K C3M0060065K.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0060065K C3M0060065K.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 27A; Idm: 99A; 150W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27A
Pulsed drain current: 99A
Power dissipation: 150W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 46nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0065090D C3M0065090D.pdf
C3M0065090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1057.38 грн
3+ 928.58 грн
30+ 889.83 грн
C3M0065090D C3M0065090D.pdf
C3M0065090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
Reverse recovery time: 30ns
Drain-source voltage: 900V
Drain current: 36A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1268.86 грн
3+ 1157.15 грн
30+ 1067.79 грн
C3M0065090J C3M0065090J.pdf
C3M0065090J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+937.41 грн
3+ 822.71 грн
C3M0065090J C3M0065090J.pdf
C3M0065090J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Mounting: SMD
Case: D2PAK-7
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1124.9 грн
3+ 1025.22 грн
C3M0065090J-TR C3M0065090J.pdf
C3M0065090J-TR
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
товар відсутній
C3M0065090J-TR C3M0065090J.pdf
C3M0065090J-TR
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns
Power dissipation: 113W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 30.4nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 900V
Drain current: 35A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
C3M0065100J c3m0065100j.pdf
C3M0065100J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
товар відсутній
C3M0065100J c3m0065100j.pdf
C3M0065100J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 35A
Power dissipation: 113.5W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 14ns
кількість в упаковці: 1 шт
товар відсутній
C3M0065100K C3M0065100K-DTE.pdf
C3M0065100K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
товар відсутній
C3M0065100K C3M0065100K-DTE.pdf
C3M0065100K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; TO247-4; 14ns
Reverse recovery time: 14ns
Drain-source voltage: 1kV
Drain current: 35A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 113.5W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 35nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
C3M0075120D c3m0075120d.pdf
C3M0075120D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1235.48 грн
2+ 772.2 грн
3+ 729.99 грн
C3M0075120D c3m0075120d.pdf
C3M0075120D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19.7A; Idm: 80A; 113.6W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 19.7A
Pulsed drain current: 80A
Power dissipation: 113.6W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1482.57 грн
2+ 962.28 грн
3+ 875.99 грн
C3M0075120J C3M0075120J.pdf
C3M0075120J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120J C3M0075120J.pdf
C3M0075120J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; D2PAK-7
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0075120K C3M0075120K.pdf
C3M0075120K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
товар відсутній
C3M0075120K C3M0075120K.pdf
C3M0075120K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; 113.6W; TO247-4
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 113.6W
Case: TO247-4
Gate-source voltage: -8...19V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 14nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
C3M0120090D C3M0120090D-DTE.pdf
C3M0120090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+773.48 грн
2+ 550.78 грн
5+ 520.34 грн
C3M0120090D C3M0120090D-DTE.pdf
C3M0120090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 23A; 97W; TO247-3; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 23A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 97W
Polarisation: unipolar
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 118 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+928.17 грн
2+ 686.36 грн
5+ 624.4 грн
C3M0120090J C3M0120090J-DTE.pdf
C3M0120090J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+813.72 грн
2+ 573.61 грн
4+ 542.48 грн
10+ 541.79 грн
C3M0120090J C3M0120090J-DTE.pdf
C3M0120090J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 22A; 83W; D2PAK-7; 24ns
Reverse recovery time: 24ns
Drain-source voltage: 900V
Drain current: 22A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 17.3nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
кількість в упаковці: 1 шт
на замовлення 144 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+976.46 грн
2+ 714.81 грн
4+ 650.97 грн
10+ 650.14 грн
C3M0120100J C3M0120100J.pdf
C3M0120100J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+781.67 грн
2+ 591.6 грн
4+ 559.78 грн
10+ 559.08 грн
C3M0120100J C3M0120100J.pdf
C3M0120100J
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 22A; 83W; D2PAK-7; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: SMD
Case: D2PAK-7
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.12Ω
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+938.01 грн
2+ 737.23 грн
4+ 671.73 грн
10+ 670.9 грн
C3M0120100K C3M0120100K.pdf
C3M0120100K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
товар відсутній
C3M0120100K C3M0120100K.pdf
C3M0120100K
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 13.5A; 83W; TO247-4; 16ns
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 21.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -4...15V
Mounting: THT
Case: TO247-4
Reverse recovery time: 16ns
Drain-source voltage: 1kV
Drain current: 13.5A
On-state resistance: 0.17Ω
кількість в упаковці: 1 шт
товар відсутній
C3M0160120D C3M0160120D.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
товар відсутній
C3M0160120D C3M0160120D.pdf
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 97W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 97W
Case: TO247-3
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
C3M0160120J C3M0160120J.pdf
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
C3M0160120J C3M0160120J.pdf
Виробник: Wolfspeed(CREE)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 34A; 90W
Type of transistor: N-MOSFET
Technology: C3M™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 34A
Power dissipation: 90W
Case: D2PAK-7
Gate-source voltage: -8...19V
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
C3M0280090D C3M0280090D-DTE.pdf
C3M0280090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+346.5 грн
3+ 285.08 грн
4+ 266.4 грн
9+ 251.86 грн
30+ 242.18 грн
Мінімальне замовлення: 2
C3M0280090D C3M0280090D-DTE.pdf
C3M0280090D
Виробник: Wolfspeed(CREE)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 7.5A; 54W; TO247-3; 20ns
Reverse recovery time: 20ns
Drain-source voltage: 900V
Drain current: 7.5A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 9.5nC
Technology: C3M™; SiC
Kind of channel: enhanced
Gate-source voltage: -8...19V
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+415.8 грн
3+ 355.25 грн
4+ 319.67 грн
9+ 302.24 грн
30+ 290.61 грн
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