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AS4C32M16SB-7TCNTR AS4C32M16SB-7TCNTR ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TIN AS4C32M16SB-7TIN ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TINTR AS4C32M16SB-7TINTR ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TIN Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
на замовлення 309 шт:
термін постачання 21-30 дні (днів)
1+1225.25 грн
10+ 1118.11 грн
25+ 947.17 грн
108+ 924.05 грн
216+ 793.27 грн
540+ 788.65 грн
1080+ 784.69 грн
AS4C32M16SB-6TIN AS4C32M16SB-6TIN ALLIANCE MEMORY 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TINTR Alliance Memory 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201-1265391.pdf DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
товар відсутній
AS4C32M16SB-6TINTR AS4C32M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BIN ALLIANCE MEMORY 3999941.pdf Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
1+1275.19 грн
10+ 1100.32 грн
25+ 1029.93 грн
50+ 919.9 грн
100+ 825.64 грн
AS4C32M16SB-7BIN AS4C32M16SB-7BIN Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
на замовлення 1091 шт:
термін постачання 21-30 дні (днів)
1+1139.71 грн
10+ 1039.87 грн
25+ 891.69 грн
100+ 771.48 грн
250+ 753.64 грн
2784+ 706.09 грн
5220+ 696.18 грн
AS4C32M16SB-7BIN AS4C32M16SB-7BIN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C32M16SB-7BINTR AS4C32M16SB-7BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TCN AS4C32M16SB-7TCN Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 781 шт:
термін постачання 21-30 дні (днів)
1+940.13 грн
10+ 858.33 грн
25+ 727.22 грн
108+ 636.07 грн
216+ 609.65 грн
540+ 566.72 грн
AS4C32M16SB-7TCN ALLIANCE MEMORY 3999941.pdf Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+1052.9 грн
10+ 908.41 грн
25+ 849.88 грн
50+ 759.59 грн
100+ 681.47 грн
AS4C32M16SB-7TCN AS4C32M16SB-7TCN ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 161 шт:
термін постачання 7-14 дні (днів)
1+1284.82 грн
2+ 925.99 грн
3+ 842.98 грн
108+ 811.6 грн
AS4C32M16SB-7TCN Alliance Memory 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
на замовлення 1 шт:
термін постачання 2-3 дні (днів)
1+933.35 грн
10+ 871.12 грн
100+ 808.91 грн
AS4C32M16SB-7TCNTR AS4C32M16SB-7TCNTR Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+947.06 грн
10+ 864.41 грн
25+ 732.51 грн
100+ 642.02 грн
250+ 614.27 грн
500+ 609.65 грн
1000+ 571.34 грн
AS4C32M16SB-7TCNTR AS4C32M16SB-7TCNTR ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TIN Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)
1+1205.21 грн
10+ 1103.68 грн
25+ 941.89 грн
50+ 935.94 грн
108+ 924.05 грн
216+ 790.63 грн
540+ 785.35 грн
AS4C32M16SB-7TIN ALLIANCE MEMORY 3999941.pdf Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
1+1245.55 грн
10+ 1075.13 грн
25+ 1006.22 грн
50+ 898.57 грн
100+ 806.59 грн
AS4C32M16SB-7TIN AS4C32M16SB-7TIN ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C32M16SB-7TINTR AS4C32M16SB-7TINTR Alliance Memory AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1420 шт:
термін постачання 21-30 дні (днів)
1+1118.91 грн
10+ 1020.89 грн
25+ 875.18 грн
100+ 757.61 грн
250+ 725.24 грн
500+ 720.62 грн
1000+ 675.04 грн
AS4C32M16SB-7TINTR AS4C32M16SB-7TINTR ALLIANCE MEMORY as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SC-7TIN AS4C32M16SC-7TIN ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR AS4C32M16SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TIN AS4C32M16SC-7TIN Alliance Memory AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
на замовлення 416 шт:
термін постачання 21-30 дні (днів)
1+1125.84 грн
10+ 1027.72 грн
25+ 870.55 грн
108+ 762.89 грн
216+ 729.86 грн
540+ 724.58 грн
1080+ 697.5 грн
AS4C32M16SC-7TIN AS4C32M16SC-7TIN ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR Alliance Memory AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C32M16SC-7TINTR AS4C32M16SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SM-7TCN Alliance Memory 512M-SDRAM-AS4C32M16SM-C-20140714-1265436.pdf DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
товар відсутній
AS4C32M16SM-7TIN AS4C32M16SM-7TIN Alliance Memory 512M-SDRAM-AS4C32M16SM-C-20140714-1265436.pdf DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BCN AS4C32M32MD1-5BCN Alliance Memory 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BCNTR Alliance Memory 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1-5BIN AS4C32M32MD1-5BIN Alliance Memory 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 317 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BINTR Alliance Memory 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1A-5BIN ALLIANCE MEMORY AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR ALLIANCE MEMORY AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD1A-5BIN AS4C32M32MD1A-5BIN Alliance Memory AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball-1324387.pdf DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
1+675.81 грн
10+ 613.75 грн
25+ 522.46 грн
50+ 521.14 грн
AS4C32M32MD1A-5BIN ALLIANCE MEMORY AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR Alliance Memory AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball-1324387.pdf DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
товар відсутній
AS4C32M32MD1A-5BINTR ALLIANCE MEMORY AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2-25BCN Alliance Memory 20160809_1G_MDDR2_AS4C64M16MD2-25BCN_AS4C32M32MD2--1265369.pdf DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
на замовлення 242 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD2-25BCNTR Alliance Memory 20160809_1G_MDDR2_AS4C64M16MD2-25BCN_AS4C32M32MD2--1265369.pdf DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
товар відсутній
AS4C32M32MD2A-25BIN ALLIANCE MEMORY 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_AS4C64M16MD2A-25BIN_v1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR ALLIANCE MEMORY AS4C32M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній
AS4C32M32MD2A-25BIN AS4C32M32MD2A-25BIN Alliance Memory 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_A-1324428.pdf DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
1+556.37 грн
10+ 504.37 грн
25+ 428.01 грн
100+ 373.19 грн
256+ 361.96 грн
512+ 344.79 грн
1024+ 333.56 грн
AS4C32M32MD2A-25BIN ALLIANCE MEMORY 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_AS4C64M16MD2A-25BIN_v1.0_Jan2018.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR AS4C32M32MD2A-25BINTR Alliance Memory 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_A-1324428.pdf DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C32M32MD2A-25BINTR ALLIANCE MEMORY AS4C32M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M8D1-5TCN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf as4c32m8d1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TCNTR ALLIANCE MEMORY 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN ALLIANCE MEMORY as4c32m8d1.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TINTR ALLIANCE MEMORY 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TCN AS4C32M8D1-5TCN Alliance Memory 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
AS4C32M8D1-5TCN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf as4c32m8d1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TCNTR Alliance Memory 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf DRAM
товар відсутній
AS4C32M8D1-5TCNTR ALLIANCE MEMORY 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN AS4C32M8D1-5TIN Alliance Memory 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
AS4C32M8D1-5TIN ALLIANCE MEMORY as4c32m8d1.pdf 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TINTR Alliance Memory 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf DRAM
товар відсутній
AS4C32M8D1-5TINTR ALLIANCE MEMORY 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M16SB-7TCNTR as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TIN as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7TINTR as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TIN AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
Виробник: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
на замовлення 309 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1225.25 грн
10+ 1118.11 грн
25+ 947.17 грн
108+ 924.05 грн
216+ 793.27 грн
540+ 788.65 грн
1080+ 784.69 грн
AS4C32M16SB-6TIN 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf
AS4C32M16SB-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-6TINTR 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201-1265391.pdf
Виробник: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
товар відсутній
AS4C32M16SB-6TINTR
AS4C32M16SB-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SB-7BIN 3999941.pdf
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1275.19 грн
10+ 1100.32 грн
25+ 1029.93 грн
50+ 919.9 грн
100+ 825.64 грн
AS4C32M16SB-7BIN AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
AS4C32M16SB-7BIN
Виробник: Alliance Memory
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
на замовлення 1091 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1139.71 грн
10+ 1039.87 грн
25+ 891.69 грн
100+ 771.48 грн
250+ 753.64 грн
2784+ 706.09 грн
5220+ 696.18 грн
AS4C32M16SB-7BIN Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7BIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C32M16SB-7BINTR Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7BINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TCN AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
AS4C32M16SB-7TCN
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 781 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+940.13 грн
10+ 858.33 грн
25+ 727.22 грн
108+ 636.07 грн
216+ 609.65 грн
540+ 566.72 грн
AS4C32M16SB-7TCN 3999941.pdf
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1052.9 грн
10+ 908.41 грн
25+ 849.88 грн
50+ 759.59 грн
100+ 681.47 грн
AS4C32M16SB-7TCN as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 161 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1284.82 грн
2+ 925.99 грн
3+ 842.98 грн
108+ 811.6 грн
AS4C32M16SB-7TCN 512M%20SDRAM_%20B%20die_AS4C32M16SB-7TCN-7TIN-6TIN_Rev%201.0%20June%202016.pdf
Виробник: Alliance Memory
Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
на замовлення 1 шт:
термін постачання 2-3 дні (днів)
Кількість Ціна без ПДВ
1+933.35 грн
10+ 871.12 грн
100+ 808.91 грн
AS4C32M16SB-7TCNTR AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
AS4C32M16SB-7TCNTR
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+947.06 грн
10+ 864.41 грн
25+ 732.51 грн
100+ 642.02 грн
250+ 614.27 грн
500+ 609.65 грн
1000+ 571.34 грн
AS4C32M16SB-7TCNTR as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SB-7TIN AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1063 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1205.21 грн
10+ 1103.68 грн
25+ 941.89 грн
50+ 935.94 грн
108+ 924.05 грн
216+ 790.63 грн
540+ 785.35 грн
AS4C32M16SB-7TIN 3999941.pdf
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 512Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1245.55 грн
10+ 1075.13 грн
25+ 1006.22 грн
50+ 898.57 грн
100+ 806.59 грн
AS4C32M16SB-7TIN as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C32M16SB-7TINTR AllianceMemory_512M_SDRAM_Bdie_AS4C32M16SB_7TXN_6T-1826888.pdf
AS4C32M16SB-7TINTR
Виробник: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
на замовлення 1420 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1118.91 грн
10+ 1020.89 грн
25+ 875.18 грн
100+ 757.61 грн
250+ 725.24 грн
500+ 720.62 грн
1000+ 675.04 грн
AS4C32M16SB-7TINTR as4c32m16sb.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C32M16SB-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16SC-7TIN AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C32M16SC-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C32M16SC-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TIN AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf
AS4C32M16SC-7TIN
Виробник: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
на замовлення 416 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1125.84 грн
10+ 1027.72 грн
25+ 870.55 грн
108+ 762.89 грн
216+ 729.86 грн
540+ 724.58 грн
1080+ 697.5 грн
AS4C32M16SC-7TIN AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C32M16SC-7TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C32M16SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
Виробник: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
товар відсутній
AS4C32M16SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
AS4C32M16SC-7TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M16SM-7TCN 512M-SDRAM-AS4C32M16SM-C-20140714-1265436.pdf
Виробник: Alliance Memory
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
товар відсутній
AS4C32M16SM-7TIN 512M-SDRAM-AS4C32M16SM-C-20140714-1265436.pdf
AS4C32M16SM-7TIN
Виробник: Alliance Memory
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BCN 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf
AS4C32M32MD1-5BCN
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BCNTR 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1-5BIN 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf
AS4C32M32MD1-5BIN
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
на замовлення 317 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD1-5BINTR 1GB-AS4C32M32MD1_mobile_v1-1265395.pdf
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1A-5BIN AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD1A-5BIN AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball-1324387.pdf
AS4C32M32MD1A-5BIN
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+675.81 грн
10+ 613.75 грн
25+ 522.46 грн
50+ 521.14 грн
AS4C32M32MD1A-5BIN AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball-1324387.pdf
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
товар відсутній
AS4C32M32MD1A-5BINTR AllianceMemory_LPDDR_1Gb_AS4C32M32MD1A-5BIN_90Ball_Rev1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2-25BCN 20160809_1G_MDDR2_AS4C64M16MD2-25BCN_AS4C32M32MD2--1265369.pdf
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
на замовлення 242 шт:
термін постачання 21-30 дні (днів)
AS4C32M32MD2-25BCNTR 20160809_1G_MDDR2_AS4C64M16MD2-25BCN_AS4C32M32MD2--1265369.pdf
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
товар відсутній
AS4C32M32MD2A-25BIN 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_AS4C64M16MD2A-25BIN_v1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR AS4C32M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній
AS4C32M32MD2A-25BIN 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_A-1324428.pdf
AS4C32M32MD2A-25BIN
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+556.37 грн
10+ 504.37 грн
25+ 428.01 грн
100+ 373.19 грн
256+ 361.96 грн
512+ 344.79 грн
1024+ 333.56 грн
AS4C32M32MD2A-25BIN 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_AS4C64M16MD2A-25BIN_v1.0_Jan2018.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR 20180221__AllianceMemory_1G_LPDDR2_AS4C32M32MD2A_A-1324428.pdf
AS4C32M32MD2A-25BINTR
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C32M32MD2A-25BINTR AS4C32M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M8D1-5TCN 4C128M16D2-25BCNTR-DTE.pdf as4c32m8d1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TCNTR 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN as4c32m8d1.pdf 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TINTR 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TCN 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf
AS4C32M8D1-5TCN
Виробник: Alliance Memory
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
AS4C32M8D1-5TCN 4C128M16D2-25BCNTR-DTE.pdf as4c32m8d1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TCNTR 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf
Виробник: Alliance Memory
DRAM
товар відсутній
AS4C32M8D1-5TCNTR 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf
AS4C32M8D1-5TIN
Виробник: Alliance Memory
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
AS4C32M8D1-5TIN as4c32m8d1.pdf 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TINTR 20160707_Alliance Memory_256M_DDR1_AS4C32M8D1-5TCN-1265354.pdf
Виробник: Alliance Memory
DRAM
товар відсутній
AS4C32M8D1-5TINTR 20160707_Alliance%20Memory_256M_DDR1_AS4C32M8D1-5TCN-5TIN%20CI_%20Rev1.0%20June%202016.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
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