| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GUO40-12NO1 | IXYS |
 Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.2kV Max. forward voltage: 1.06V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP кількість в упаковці: 1 шт |
на замовлення 131 шт: термін постачання 7-14 дні (днів) |
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GUO40-16NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.6kV Max. forward voltage: 1.06V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP кількість в упаковці: 1 шт |
на замовлення 99 шт: термін постачання 7-14 дні (днів) |
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ITF48IF1200HR | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Mounting: THT Kind of package: tube Case: ISO247™ Power dissipation: 390W Technology: Trench; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT Gate charge: 175nC кількість в упаковці: 1 шт |
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IX2113G | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A Mounting: THT Operating temperature: -40...125°C Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut) Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Case: DIP14 Supply voltage: 10...20V Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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IX2120B | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28 Output current: -2...2A Number of channels: 2 Supply voltage: 15...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: tube Voltage class: 1.2kV кількість в упаковці: 1 шт |
на замовлення 232 шт: термін постачання 7-14 дні (днів) |
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IX2127G | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V кількість в упаковці: 1 шт |
на замовлення 352 шт: термін постачання 7-14 дні (днів) |
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IX2127N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V кількість в упаковці: 1 шт |
на замовлення 852 шт: термін постачання 7-14 дні (днів) |
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| IX4310N | IXYS | IX4310N MOSFET/IGBT drivers |
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IX4310NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Mounting: SMD Case: SO8 Operating temperature: -40...125°C Output current: -2...2A Type of integrated circuit: driver Kind of output: non-inverting Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Number of channels: 2 Supply voltage: 5...24V кількість в упаковці: 4000 шт |
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IX4310TTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Supply voltage: 5...24V Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Output current: -2...2A кількість в упаковці: 3000 шт |
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IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 1155 шт: термін постачання 7-14 дні (днів) |
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IX4340NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 1138 шт: термін постачання 7-14 дні (днів) |
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| IX4340NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 4000 шт |
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IX4340NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 4000 шт |
товар відсутній |
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 7-14 дні (днів) |
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IX4340UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 5000 шт |
товар відсутній |
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| IX4351NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver Case: SO16-EP Output current: -9...9A Number of channels: 2 Supply voltage: -10...25V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
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| IX4351NETR | IXYS |
IX4351NETR MOSFET/IGBT drivers |
товар відсутній |
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IX4426MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 1241 шт: термін постачання 7-14 дні (днів) |
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IX4426N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 187 шт: термін постачання 7-14 дні (днів) |
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IX4426NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting кількість в упаковці: 2000 шт |
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IX4427MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
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IX4427N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 950 шт: термін постачання 7-14 дні (днів) |
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IX4427NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 1235 шт: термін постачання 7-14 дні (днів) |
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IX4428MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Type of integrated circuit: driver кількість в упаковці: 1 шт |
на замовлення 36 шт: термін постачання 7-14 дні (днів) |
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IX4428N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: tube Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver кількість в упаковці: 1 шт |
на замовлення 215 шт: термін постачання 7-14 дні (днів) |
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IX4428NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver кількість в упаковці: 2000 шт |
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IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 498 шт: термін постачання 7-14 дні (днів) |
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IX9907NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: reel; tape Output current: 1.7A Operating voltage: 650V Integrated circuit features: linear dimming; PWM кількість в упаковці: 2000 шт |
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IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 289 шт: термін постачання 7-14 дні (днів) |
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IX9908NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: reel; tape кількість в упаковці: 2000 шт |
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IX9915N | IXYS |
Category: Integrated circuits - others Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA Kind of package: tube Mounting: SMD Supply voltage: 1.3...12.5V DC Collector-emitter voltage: 350V Output current: 20mA Type of integrated circuit: driver Reference voltage: 1.299V Case: SO8 Kind of integrated circuit: error amplifier and Darlington transistor Collector current: 0.2A кількість в упаковці: 1 шт |
на замовлення 275 шт: термін постачання 7-14 дні (днів) |
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 85W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 27nC кількість в упаковці: 1 шт |
на замовлення 91 шт: термін постачання 7-14 дні (днів) |
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IXA12IF1200PB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3 Mounting: THT Kind of package: tube Case: TO220-3 Power dissipation: 85W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 27nC кількість в упаковці: 1 шт |
на замовлення 84 шт: термін постачання 7-14 дні (днів) |
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| IXA17IF1200HJ | IXYS |
IXA17IF1200HJ THT IGBT transistors |
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| IXA20I1200PB | IXYS |
IXA20I1200PB THT IGBT transistors |
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| IXA20IF1200HB | IXYS |
IXA20IF1200HB THT IGBT transistors |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Case: SMPD-B Gate-emitter voltage: ±20V Collector current: 23A Pulsed collector current: 45A Power dissipation: 130W Electrical mounting: SMT Type of module: IGBT Technology: ISOPLUS™; Sonic FRD™ Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 7-14 дні (днів) |
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| IXA27IF1200HJ | IXYS |
IXA27IF1200HJ THT IGBT transistors |
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IXA30PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Case: SMPD-B Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 75A Power dissipation: 150W Electrical mounting: SMT Type of module: IGBT Technology: ISOPLUS™; Sonic FRD™ Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 7-14 дні (днів) |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 147W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 53 шт: термін постачання 7-14 дні (днів) |
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IXA33IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Type of transistor: IGBT Technology: Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 34A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 110ns Turn-off time: 350ns кількість в упаковці: 300 шт |
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| IXA37IF1200HJ | IXYS |
IXA37IF1200HJ THT IGBT transistors |
на замовлення 33 шт: термін постачання 7-14 дні (днів) |
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IXA40RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 43A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 105A Power dissipation: 215W Technology: ISOPLUS™; Sonic FRD™ кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 7-14 дні (днів) |
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| IXA45IF1200HB | IXYS |
IXA45IF1200HB THT IGBT transistors |
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| IXA4I1200UC-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Mounting: SMD Gate charge: 12nC Collector-emitter voltage: 1.2kV Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 9A Case: TO252 Technology: XPT™ Turn-on time: 70ns Turn-off time: 250ns Power dissipation: 45W Type of transistor: IGBT |
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IXA4IF1200TC | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268 Mounting: SMD Kind of package: tube Case: TO268 Power dissipation: 45W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 5A Pulsed collector current: 9A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 12nC кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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| IXA55I1200HJ | IXYS |
IXA55I1200HJ THT IGBT transistors |
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IXA60IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 56A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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IXA70I1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 350W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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IXBA16N170AHV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263 Mounting: SMD Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO263 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 7-14 дні (днів) |
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| IXBF20N300 | IXYS |
IXBF20N300 THT IGBT transistors |
на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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| IXBF20N360 | IXYS |
IXBF20N360 THT IGBT transistors |
товар відсутній |
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| IXBF40N160 | IXYS |
IXBF40N160 THT IGBT transistors |
товар відсутній |
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IXBF42N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Mounting: THT Case: ISOPLUS i4-pac™ x024c Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector current: 24A Pulsed collector current: 380A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 240W кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 7-14 дні (днів) |
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IXBH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3 Mounting: THT Turn-on time: 63ns Turn-off time: 1.8µs Type of transistor: IGBT Power dissipation: 140W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 30nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 7-14 дні (днів) |
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IXBH10N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Turn-on time: 805ns Turn-off time: 2.13µs Type of transistor: IGBT Power dissipation: 180W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 46nC Technology: BiMOSFET™ Case: TO247HV Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 88A кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™; FRED Collector current: 12A Pulsed collector current: 100A Turn-on time: 460ns Turn-off time: 705ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 160W кількість в упаковці: 1 шт |
товар відсутній |
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IXBH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Turn-on time: 220ns Turn-off time: 940ns Type of transistor: IGBT Power dissipation: 250W Pulsed collector current: 120A Collector current: 16A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 72nC Technology: BiMOSFET™; FRED Case: TO247-3 кількість в упаковці: 1 шт |
товар відсутній |
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IXBH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Mounting: THT Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W Pulsed collector current: 40A Collector current: 10A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO247-3 кількість в упаковці: 1 шт |
товар відсутній |
| GUO40-12NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
кількість в упаковці: 1 шт
на замовлення 131 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1435.18 грн |
| 3+ | 1308.91 грн |
| GUO40-16NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.06V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
кількість в упаковці: 1 шт
на замовлення 99 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1435.18 грн |
| 3+ | 1308.91 грн |
| ITF48IF1200HR |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
кількість в упаковці: 1 шт
товар відсутній
| IX2113G |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A
Mounting: THT
Operating temperature: -40...125°C
Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut)
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Case: DIP14
Supply voltage: 10...20V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP14; -2÷2A
Mounting: THT
Operating temperature: -40...125°C
Integrated circuit features: 3,3V logic compatible; propagation delays matching: 20ns; tolerant to negative voltage transient: du/dt immune; UVLO (UnderVoltage LockOut)
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Case: DIP14
Supply voltage: 10...20V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.82 грн |
| 5+ | 104.33 грн |
| 25+ | 93 грн |
| 100+ | 91.34 грн |
| IX2120B |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Supply voltage: 15...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: tube
Voltage class: 1.2kV
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Supply voltage: 15...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: tube
Voltage class: 1.2kV
кількість в упаковці: 1 шт
на замовлення 232 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 304.92 грн |
| 3+ | 260.4 грн |
| 5+ | 215.88 грн |
| 13+ | 204.26 грн |
| IX2127G |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
на замовлення 352 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 97.44 грн |
| 10+ | 84.69 грн |
| 32+ | 79.71 грн |
| 50+ | 78.88 грн |
| IX2127N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
кількість в упаковці: 1 шт
на замовлення 852 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.08 грн |
| 5+ | 106.06 грн |
| 11+ | 92.17 грн |
| 29+ | 87.18 грн |
| 100+ | 85.52 грн |
| IX4310NTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 5...24V
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -2...2A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 5...24V
кількість в упаковці: 4000 шт
товар відсутній
| IX4310TTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 5...24V
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Output current: -2...2A
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 5...24V
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Output current: -2...2A
кількість в упаковці: 3000 шт
товар відсутній
| IX4340N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 1155 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.16 грн |
| 5+ | 59.84 грн |
| 21+ | 45.67 грн |
| 58+ | 43.18 грн |
| 250+ | 42.1 грн |
| IX4340NE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 1138 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 71.54 грн |
| 5+ | 58.98 грн |
| 21+ | 45.67 грн |
| 58+ | 43.18 грн |
| 250+ | 42.1 грн |
| IX4340NETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
товар відсутній
| IX4340NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 4000 шт
товар відсутній
| IX4340UE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.01 грн |
| 5+ | 58.81 грн |
| 21+ | 45.97 грн |
| 58+ | 43.47 грн |
| 250+ | 41.93 грн |
| IX4340UETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 5000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 5000 шт
товар відсутній
| IX4351NE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,IGBT gate driver,SiC MOSFET gate driver
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver; low-side; SiC MOSFET gate driver
Case: SO16-EP
Output current: -9...9A
Number of channels: 2
Supply voltage: -10...25V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
| IX4426MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 1241 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.35 грн |
| 5+ | 67.86 грн |
| 20+ | 48.74 грн |
| 25+ | 48.66 грн |
| 55+ | 46 грн |
| IX4426N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 187 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.84 грн |
| 5+ | 61.22 грн |
| 22+ | 44.01 грн |
| 61+ | 41.52 грн |
| IX4426NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
кількість в упаковці: 2000 шт
товар відсутній
| IX4427MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
| IX4427N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 950 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 76.01 грн |
| 5+ | 58.12 грн |
| 23+ | 44.01 грн |
| 61+ | 41.52 грн |
| 250+ | 41.02 грн |
| IX4427NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 1235 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.37 грн |
| 5+ | 58.12 грн |
| 23+ | 44.01 грн |
| 61+ | 41.52 грн |
| 500+ | 41.02 грн |
| IX4428MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.37 грн |
| 5+ | 58.12 грн |
| 23+ | 44.01 грн |
| 61+ | 41.52 грн |
| 500+ | 41.02 грн |
| IX4428N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.48 грн |
| 5+ | 58.12 грн |
| 23+ | 44.01 грн |
| 61+ | 41.52 грн |
| 250+ | 41.02 грн |
| IX4428NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
кількість в упаковці: 2000 шт
товар відсутній
| IX9907N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 498 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.09 грн |
| 5+ | 93.99 грн |
| 14+ | 72.24 грн |
| 37+ | 68.09 грн |
| 250+ | 67.26 грн |
| IX9907NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Operating voltage: 650V
Integrated circuit features: linear dimming; PWM
кількість в упаковці: 2000 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Operating voltage: 650V
Integrated circuit features: linear dimming; PWM
кількість в упаковці: 2000 шт
товар відсутній
| IX9908N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.27 грн |
| 5+ | 71.57 грн |
| 18+ | 54.8 грн |
| 49+ | 51.48 грн |
| 250+ | 50.65 грн |
| IX9908NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: reel; tape
кількість в упаковці: 2000 шт
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: reel; tape
кількість в упаковці: 2000 шт
товар відсутній
| IX9915N |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 68.85 грн |
| 5+ | 60.36 грн |
| 20+ | 48.16 грн |
| 54+ | 45.67 грн |
| IXA12IF1200HB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
кількість в упаковці: 1 шт
на замовлення 91 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.22 грн |
| 3+ | 291.44 грн |
| 5+ | 212.56 грн |
| 13+ | 200.94 грн |
| IXA12IF1200PB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
кількість в упаковці: 1 шт
на замовлення 84 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 283.46 грн |
| 3+ | 245.74 грн |
| 6+ | 179.35 грн |
| 15+ | 169.39 грн |
| IXA20PG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 23A
Pulsed collector current: 45A
Power dissipation: 130W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 900.45 грн |
| 2+ | 729.47 грн |
| 4+ | 664.26 грн |
| 10+ | 662.6 грн |
| IXA30PG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Case: SMPD-B
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
Electrical mounting: SMT
Type of module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1197.33 грн |
| 2+ | 920.89 грн |
| 3+ | 838.63 грн |
| IXA30RG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 53 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 741.29 грн |
| 2+ | 644.97 грн |
| 3+ | 619.42 грн |
| 5+ | 587.04 грн |
| 10+ | 577.07 грн |
| 45+ | 564.62 грн |
| IXA33IF1200HB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 34A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 350ns
кількість в упаковці: 300 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 34A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 350ns
кількість в упаковці: 300 шт
товар відсутній
| IXA37IF1200HJ |
|
Виробник: IXYS
IXA37IF1200HJ THT IGBT transistors
IXA37IF1200HJ THT IGBT transistors
на замовлення 33 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1090.92 грн |
| 2+ | 685.85 грн |
| 4+ | 648.48 грн |
| IXA40RG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 993.45 грн |
| 2+ | 694.12 грн |
| 4+ | 631.88 грн |
| IXA4I1200UC-TRL |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
товар відсутній
| IXA4IF1200TC |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Power dissipation: 45W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 12nC
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Power dissipation: 45W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 12nC
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 431 грн |
| 3+ | 367.32 грн |
| 4+ | 303.07 грн |
| 9+ | 286.46 грн |
| IXA60IF1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1891.22 грн |
| 2+ | 1724.52 грн |
| IXA70I1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| IXBA16N170AHV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Mounting: SMD
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO263
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Mounting: SMD
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO263
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1775.87 грн |
| 2+ | 1619.32 грн |
| 3+ | 1558.52 грн |
| IXBF20N300 |
|
Виробник: IXYS
IXBF20N300 THT IGBT transistors
IXBF20N300 THT IGBT transistors
на замовлення 11 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3929.09 грн |
| IXBF42N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4623.87 грн |
| 25+ | 4390.62 грн |
| IXBH10N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 842.33 грн |
| 2+ | 647.56 грн |
| 5+ | 589.53 грн |
| 30+ | 579.57 грн |
| IXBH10N300HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 88A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5138.04 грн |
| 30+ | 4816.57 грн |
| IXBH12N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
кількість в упаковці: 1 шт
товар відсутній
| IXBH16N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Turn-on time: 220ns
Turn-off time: 940ns
Type of transistor: IGBT
Power dissipation: 250W
Pulsed collector current: 120A
Collector current: 16A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Turn-on time: 220ns
Turn-off time: 940ns
Type of transistor: IGBT
Power dissipation: 250W
Pulsed collector current: 120A
Collector current: 16A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
| IXBH16N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Pulsed collector current: 40A
Collector current: 10A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Pulsed collector current: 40A
Collector current: 10A
Gate-emitter voltage: ±20V
Kind of package: tube
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній