| Фото | Назва | Виробник | Інформація |
Доступність |
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IXTF2N300P3 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W Mounting: THT Case: ISOPLUS i4-pac™ x024c Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 1.6A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Technology: Polar3™ Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 160W |
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IXTH2N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns Mounting: THT Case: TO247HV Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 2A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 520W |
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IXTT2N300P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 2A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 520W |
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IXFH52N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3 Mounting: THT Case: TO247-3 Polarisation: unipolar Drain-source voltage: 300V Reverse recovery time: 160ns Kind of package: tube Drain current: 52A Gate charge: 110nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 73mΩ Type of transistor: N-MOSFET Power dissipation: 400W |
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MMIX1T600N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W Mounting: SMD Power dissipation: 830W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 1.3mΩ Drain current: 600A Drain-source voltage: 40V Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhanced Reverse recovery time: 100ns Gate-source voltage: ±20V Pulsed drain current: 2kA Case: SMPD |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXTA64N10L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 357W Case: TO263 On-state resistance: 32mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 180ns |
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IXTH64N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 64A Power dissipation: 357W Case: TO247-3 On-state resistance: 32mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 180ns |
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IXTY44N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO252 On-state resistance: 30mΩ Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 60ns |
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| LCB120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Mounting: SMT Case: DIP6 Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm |
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IXTA02N250HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.2A Power dissipation: 83W Case: TO263 On-state resistance: 450Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.5µs |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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MCO100-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 101A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.2kV Load current: 101A Case: SOT227B Max. forward voltage: 1.74V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCMA85PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 135A Max. forward voltage: 1.18V Load current: 85A Semiconductor structure: double series Gate current: 95/200mA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA85PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 135A Max. forward voltage: 1.18V Load current: 85A Semiconductor structure: double series Gate current: 95/200mA Max. forward impulse current: 1.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA110PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 170A Max. forward voltage: 1.21V Load current: 110A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 1.9kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA110PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 170A Max. forward voltage: 1.21V Load current: 110A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 1.9kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA140PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 220A Max. forward voltage: 1.28V Load current: 140A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 2.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA140PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.85V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 220A Max. forward voltage: 1.28V Load current: 140A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 2.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| MCMA260PD1600YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.81V Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 1.6kV Max. load current: 408A Max. forward voltage: 1.06V Load current: 260A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 8.3kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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LDA213STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Number of channels: 2 Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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IXTH360N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Reverse recovery time: 78ns Drain-source voltage: 55V Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 935W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
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IXTT360N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Reverse recovery time: 78ns Drain-source voltage: 55V Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 935W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Mounting: SMD Case: TO268 |
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IXTN32P60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A Semiconductor structure: single transistor Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -96A Case: SOT227B |
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IXTR32P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -18A On-state resistance: 0.385Ω Type of transistor: P-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: ISOPLUS247™ |
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IXTX32P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -32A On-state resistance: 0.35Ω Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PLUS247™ |
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DSA30C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 85W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Case: TO220AB Kind of package: tube Max. forward impulse current: 340A Power dissipation: 85W Heatsink thickness: 1.14...1.39mm |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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DSB20C60PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 30W; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Case: TO220FP Kind of package: tube Max. forward impulse current: 240A Power dissipation: 30W |
на замовлення 432 шт: термін постачання 21-30 дні (днів) |
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DSB60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.69V Case: TO220AB Kind of package: tube Max. forward impulse current: 490A Power dissipation: 145W Heatsink thickness: 1.14...1.39mm |
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
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IXTQ36N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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IXKT70N60C5 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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IXFK50N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO264 On-state resistance: 0.105Ω Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns |
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IXFR80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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MMIX1F160N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Pulsed drain current: 440A Power dissipation: 570W Case: SMPD Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 367nC Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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DSEP29-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO220AC Max. forward voltage: 2.52V Heatsink thickness: 1.14...1.39mm Power dissipation: 165W Reverse recovery time: 25ns Technology: HiPerFRED™ |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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DPG30C400HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W Mounting: THT Power dissipation: 90W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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DPG30C400PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W Mounting: THT Power dissipation: 90W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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IXYB82N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.04kW Case: PLUS264™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 215nC Kind of package: tube Turn-on time: 119ns Turn-off time: 295ns |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IXYH82N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 215nC Kind of package: tube Turn-on time: 119ns Turn-off time: 295ns |
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DSI30-08A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 286 шт: термін постачання 21-30 дні (днів) |
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| DSI30-08AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 255A Max. forward voltage: 1.25V |
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DSI30-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
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CLA30E1200NPZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube Max. forward impulse current: 255A Kind of package: tube Gate current: 30/50mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.2kV Case: TO263ABHV Features of semiconductor devices: two gate polarities Mounting: SMD Type of thyristor: thyristor |
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CLA30E1200PB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube Max. forward impulse current: 255A Kind of package: tube Gate current: 30/50mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.2kV Case: TO220AB Mounting: THT Type of thyristor: thyristor |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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| CLA30E1200PC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD Max. forward impulse current: 255A Kind of package: reel; tape Gate current: 30/50mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.2kV Case: D2PAK Mounting: SMD Type of thyristor: thyristor |
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CMA30E1600PB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube Max. forward impulse current: 220A Kind of package: tube Gate current: 28/50mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.6kV Case: TO220AB Mounting: THT Type of thyristor: thyristor |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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CMA30E1600PN | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube Max. forward impulse current: 220A Kind of package: tube Gate current: 28/50mA Load current: 23A Max. load current: 36A Max. off-state voltage: 1.6kV Case: TO220FP Mounting: THT Type of thyristor: thyristor |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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| CMA30E1600PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO263ABHV; SMD; tube Max. forward impulse current: 220A Kind of package: tube Gate current: 28/50mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.6kV Case: TO263ABHV Mounting: SMD Type of thyristor: thyristor |
товар відсутній |
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| MII300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A Topology: IGBT half-bridge Technology: NPT Case: Y3-DCB Application: motors Power dissipation: 1.38kW Collector current: 220A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
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CPC1976YX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; THT; SIP4 Type of relay: solid state Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Turn-on time: 500µs |
товар відсутній |
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CPC1511Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 450mA Switched voltage: max. 230V AC; max. 230V DC Relay variant: 1-phase; current source On-state resistance: 4Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 3.75kV Turn-on time: 4ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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CPC1301G | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs Type of optocoupler: optocoupler Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Max. off-state voltage: 5V Trigger current: 50mA Mounting: THT Number of channels: 1 Slew rate: 0.25V/μs Turn-on time: 1µs Turn-off time: 60µs CTR@If: 1000-8000%@1mA |
на замовлення 444 шт: термін постачання 21-30 дні (днів) |
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CPC1301GRTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; 250mV/μs; 50mA Type of optocoupler: optocoupler Insulation voltage: 5kV Kind of output: Darlington Max. off-state voltage: 5V Trigger current: 50mA Mounting: SMD Number of channels: 1 Slew rate: 0.25V/μs Turn-on time: 1µs Turn-off time: 60µs CTR@If: 1000-8000%@1mA |
товар відсутній |
| IXTF2N300P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 1.6A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 1.6A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
товар відсутній
| IXTH2N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
товар відсутній
| IXTT2N300P3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
товар відсутній
| IXFH52N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 160ns
Kind of package: tube
Drain current: 52A
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Drain-source voltage: 300V
Reverse recovery time: 160ns
Kind of package: tube
Drain current: 52A
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
товар відсутній
| MMIX1T600N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2029.12 грн |
| 2+ | 1781.11 грн |
| 20+ | 1752.36 грн |
| IXTA64N10L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
| IXTH64N10L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
| IXTY44N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
товар відсутній
| LCB120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
| IXTA02N250HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO263
On-state resistance: 450Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO263
On-state resistance: 450Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 824.64 грн |
| 2+ | 547.66 грн |
| 5+ | 517.5 грн |
| MCO100-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCMA85PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA85PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA110PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA110PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA140PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA140PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2354.6 грн |
| MCMA260PD1600YB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| LDA213STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| IXTH360N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
товар відсутній
| IXTT360N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
товар відсутній
| IXTN32P60P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
товар відсутній
| IXTR32P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
товар відсутній
| IXTX32P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS247™
товар відсутній
| DSA30C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 340A
Power dissipation: 85W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 340A
Power dissipation: 85W
Heatsink thickness: 1.14...1.39mm
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.7 грн |
| 5+ | 86.25 грн |
| 10+ | 75.73 грн |
| 12+ | 68.02 грн |
| 33+ | 64.51 грн |
| 250+ | 63.11 грн |
| DSB20C60PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 30W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 30W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Power dissipation: 30W
на замовлення 432 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.93 грн |
| 10+ | 65.21 грн |
| 14+ | 58.2 грн |
| 39+ | 54.7 грн |
| 250+ | 53.99 грн |
| DSB60C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.69V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 490A
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.69V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 490A
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
товар відсутній
| IXFA26N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
товар відсутній
| IXTQ36N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| IXKT70N60C5 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| IXFK50N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
товар відсутній
| IXFR80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1989.85 грн |
| 2+ | 1746.75 грн |
| MMIX1F160N30T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2582.66 грн |
| 20+ | 2351.9 грн |
| DSEP29-06B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.84 грн |
| 3+ | 192.84 грн |
| 6+ | 154.27 грн |
| 15+ | 145.85 грн |
| DPG30C400HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.33 грн |
| 3+ | 254.54 грн |
| 5+ | 202.65 грн |
| 12+ | 191.43 грн |
| DPG30C400PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.98 грн |
| 3+ | 183.02 грн |
| 6+ | 144.45 грн |
| 16+ | 136.74 грн |
| IXYB82N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1591.13 грн |
| 2+ | 1396.84 грн |
| IXYH82N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
товар відсутній
| DSI30-08A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 286 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.61 грн |
| 9+ | 95.37 грн |
| 24+ | 90.46 грн |
| 250+ | 89.06 грн |
| DSI30-08AS-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
товар відсутній
| DSI30-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
товар відсутній
| CLA30E1200NPZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Max. forward impulse current: 255A
Kind of package: tube
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
Features of semiconductor devices: two gate polarities
Mounting: SMD
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Max. forward impulse current: 255A
Kind of package: tube
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
Features of semiconductor devices: two gate polarities
Mounting: SMD
Type of thyristor: thyristor
товар відсутній
| CLA30E1200PB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. forward impulse current: 255A
Kind of package: tube
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Max. forward impulse current: 255A
Kind of package: tube
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.3 грн |
| 3+ | 156.37 грн |
| 6+ | 140.24 грн |
| 17+ | 132.53 грн |
| CLA30E1200PC-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Max. forward impulse current: 255A
Kind of package: reel; tape
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: D2PAK
Mounting: SMD
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Max. forward impulse current: 255A
Kind of package: reel; tape
Gate current: 30/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: D2PAK
Mounting: SMD
Type of thyristor: thyristor
товар відсутній
| CMA30E1600PB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.6kV
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO220AB; THT; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.6kV
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.35 грн |
| 7+ | 127.62 грн |
| 18+ | 121.31 грн |
| 50+ | 119.21 грн |
| CMA30E1600PN |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 23A
Max. load current: 36A
Max. off-state voltage: 1.6kV
Case: TO220FP
Mounting: THT
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 36A; 23A; Igt: 28/50mA; TO220FP; THT; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 23A
Max. load current: 36A
Max. off-state voltage: 1.6kV
Case: TO220FP
Mounting: THT
Type of thyristor: thyristor
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.45 грн |
| 7+ | 130.43 грн |
| 18+ | 122.71 грн |
| 50+ | 121.31 грн |
| CMA30E1600PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO263ABHV; SMD; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.6kV
Case: TO263ABHV
Mounting: SMD
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 28/50mA; TO263ABHV; SMD; tube
Max. forward impulse current: 220A
Kind of package: tube
Gate current: 28/50mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.6kV
Case: TO263ABHV
Mounting: SMD
Type of thyristor: thyristor
товар відсутній
| MII300-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| CPC1976YX6 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
товар відсутній
| CPC1511Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 4ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 223 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 538.43 грн |
| 4+ | 239.82 грн |
| 10+ | 226.49 грн |
| CPC1301G |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
CTR@If: 1000-8000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP4; 250mV/μs
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: THT
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
CTR@If: 1000-8000%@1mA
на замовлення 444 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.93 грн |
| 5+ | 103.78 грн |
| 14+ | 59.6 грн |
| 39+ | 56.1 грн |
| CPC1301GRTR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; 250mV/μs; 50mA
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
CTR@If: 1000-8000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; 250mV/μs; 50mA
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Max. off-state voltage: 5V
Trigger current: 50mA
Mounting: SMD
Number of channels: 1
Slew rate: 0.25V/μs
Turn-on time: 1µs
Turn-off time: 60µs
CTR@If: 1000-8000%@1mA
товар відсутній