| Фото | Назва | Виробник | Інформація |
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CPC3703CTR | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.36A Power dissipation: 1.1W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 517 шт: термін постачання 21-30 дні (днів) |
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CPC3708CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.8W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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CPC3730CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.14A Power dissipation: 1.4W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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MCNA40P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V Case: TO240AA Load current: 40A Max. forward voltage: 1.74V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 70/150mA |
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MCNA55P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V Case: TO240AA Load current: 55A Max. forward voltage: 1.56V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 95/200mA |
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MCNA75P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V Case: TO240AA Load current: 75A Max. forward voltage: 1.58V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 95/200mA |
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MCNA95P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V Case: TO240AA Load current: 95A Max. forward voltage: 1.63V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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MDNA50P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 50A Case: TO240AA Max. forward voltage: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw |
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MCNA120P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw Case: TO240AA Load current: 120A Max. forward voltage: 1.78V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 100/200mA |
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| MCNA150P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V Case: Y4-M6 Load current: 150A Max. forward voltage: 1.51V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA180P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V Case: Y4-M6 Load current: 180A Max. forward voltage: 1.51V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA220P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V Case: Y4-M6 Load current: 220A Max. forward voltage: 1.53V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA650P2200CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw Case: ComPack Load current: 650A Max. forward voltage: 1.59V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 300/400mA |
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MDNA140P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 300A Case: SimBus F Max. forward impulse current: 8kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 380A Case: Y1-CU Max. forward voltage: 0.93V Max. forward impulse current: 11kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 425A Case: SimBus F Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 600A Case: SimBus F Max. forward impulse current: 15kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA700P2200CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 700A Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
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| MCD255-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD255-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.4kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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MCD255-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.6kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD255-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.8kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD310-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.4kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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MCD310-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.6kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.8kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-22io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 2.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Kind of package: bulk Max. load current: 520A Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V |
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Kind of package: bulk Max. load current: 520A Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V |
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Kind of package: bulk Max. off-state voltage: 1.8kV Max. load current: 520A Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Case: Y1-CU |
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MCD44-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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MCD44-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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MCD72-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD72-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO550-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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VMO580-02F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 580A Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 3.8mΩ Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.75µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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VMO60-05F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 60A Case: TO240AA Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 240A Power dissipation: 590W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 405nC Reverse recovery time: 250ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO650-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 690A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Pulsed drain current: 2.78kA Power dissipation: 2.5kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.3µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO1200-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 1.22kA Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.25mΩ Technology: PolarHT™ Kind of channel: enhanced Gate charge: 1.71µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товар відсутній |
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IXFH130N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO247-3 On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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IXFK88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO264 On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXFT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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IXTH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXTQ88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXGK120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
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IXGK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
товар відсутній |
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IXYK120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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IXYX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXYX120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
товар відсутній |
| CPC3703CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 517 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.77 грн |
| 11+ | 33.79 грн |
| 25+ | 29.83 грн |
| 31+ | 26.96 грн |
| 85+ | 25.45 грн |
| 250+ | 25.02 грн |
| CPC3708CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.93 грн |
| 11+ | 34.08 грн |
| 25+ | 31.42 грн |
| 33+ | 25.16 грн |
| 91+ | 23.8 грн |
| CPC3730CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.16 грн |
| 10+ | 36.23 грн |
| 25+ | 32.78 грн |
| 33+ | 25.74 грн |
| MCNA40P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Case: TO240AA
Load current: 40A
Max. forward voltage: 1.74V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 70/150mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Case: TO240AA
Load current: 40A
Max. forward voltage: 1.74V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 70/150mA
товар відсутній
| MCNA55P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Load current: 55A
Max. forward voltage: 1.56V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Load current: 55A
Max. forward voltage: 1.56V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
товар відсутній
| MCNA75P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Case: TO240AA
Load current: 75A
Max. forward voltage: 1.58V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Case: TO240AA
Load current: 75A
Max. forward voltage: 1.58V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
товар відсутній
| MCNA95P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Case: TO240AA
Load current: 95A
Max. forward voltage: 1.63V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Case: TO240AA
Load current: 95A
Max. forward voltage: 1.63V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MDNA50P2200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MCNA120P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Case: TO240AA
Load current: 120A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Case: TO240AA
Load current: 120A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCNA150P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 150A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 150A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA180P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 180A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 180A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA220P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA650P2200CA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
товар відсутній
| MDNA140P2200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA380P2200KC |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA700P2200CC |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MCD255-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD310-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-22io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD312-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
товар відсутній
| MCD312-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Kind of package: bulk
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Kind of package: bulk
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
товар відсутній
| MCD312-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y1-CU
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Kind of package: bulk
Max. off-state voltage: 1.8kV
Max. load current: 520A
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Case: Y1-CU
товар відсутній
| MCD44-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1566.95 грн |
| 2+ | 1375.23 грн |
| MCD44-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD72-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2070.17 грн |
| 2+ | 1817.34 грн |
| MCD72-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD72-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO550-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO580-02F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 580A
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 3.8mΩ
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.75µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 580A
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 3.8mΩ
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.75µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO60-05F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO650-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO1200-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFH130N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 639.48 грн |
| IXFH88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 959.99 грн |
| 2+ | 680.78 грн |
| 3+ | 680.07 грн |
| 4+ | 643.4 грн |
| IXFK88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1130.31 грн |
| 2+ | 709.54 грн |
| 4+ | 670.72 грн |
| IXFT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTH88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 711.48 грн |
| 2+ | 565.76 грн |
| 3+ | 565.04 грн |
| 4+ | 534.85 грн |
| IXTQ88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXGK120N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
| IXGK120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
товар відсутній
| IXYK120N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1498.82 грн |
| 2+ | 1316.28 грн |
| IXYX120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1928.49 грн |
| 2+ | 1692.98 грн |
| IXYX120N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1921.53 грн |
| 2+ | 1687.23 грн |
| MMIX1G120N120A3V1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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