| Фото | Назва | Виробник | Інформація |
Доступність |
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| DPG60B600LB-TUB | IXYS |
 Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: tube Max. off-state voltage: 600V Electrical mounting: SMT Type of bridge rectifier: single-phase Max. forward impulse current: 250A Max. forward voltage: 2.21V Load current: 60A |
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| DLA100B1200LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: reel; tape Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
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DLA100B1200LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: tube Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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| DHG60U1200LB-TRR | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: reel; tape Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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| DHG60U1200LB-TUB | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: tube Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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LDA200S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA200STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA201S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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LDA201STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA202S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA202STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Number of channels: 2 Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA203S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Trigger current: 1A CTR@If: 33-1000%@1mA |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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LDA203STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Trigger current: 1A CTR@If: 33-1000%@1mA |
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IXTH500N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns Mounting: THT Reverse recovery time: 84ns Drain-source voltage: 40V Drain current: 500A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 1kW Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 405nC Kind of channel: enhanced Case: TO247-3 |
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IXFB150N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXTP80N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
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IXTA110N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
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| VVZB135-16IOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: E2-Pack Power dissipation: 390W Technology: X2PT Pulsed collector current: 225A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 84A Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor |
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IXTH02N250 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.2A Power dissipation: 83W Case: TO247-3 On-state resistance: 450Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.5µs |
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IXTH02N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω |
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IXTH04N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 3kV Drain current: 0.4A Power dissipation: 104W Case: TO247HV On-state resistance: 190Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs |
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IXTH05N250P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.33A Pulsed drain current: 1A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 110Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.2µs |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTH06N220P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.2kV Drain current: 0.38A Pulsed drain current: 1.2A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 80Ω Mounting: THT Gate charge: 10.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs |
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IXTH10N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 70ns |
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IXTH10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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IXTH10P60 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Reverse recovery time: 0.5µs Case: TO247-3 Kind of package: tube Power dissipation: 300W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET |
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IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs |
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IXTH120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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IXTH130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTH140N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
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IXTH140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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CPC3708ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
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CPC3902ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.4A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
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CPC5602CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 1058 шт: термін постачання 21-30 дні (днів) |
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CPC5603CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 415V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 1002 шт: термін постачання 21-30 дні (днів) |
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| MD16200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Max. load current: 310A Mechanical mounting: screw |
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| MDMA210P1600YD | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
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IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™; FRED Collector current: 12A Pulsed collector current: 100A Turn-on time: 460ns Turn-off time: 705ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 160W |
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| DPG60C300PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V Type of diode: rectifying Mounting: SMD Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 360A Power dissipation: 175W Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 300V Max. forward voltage: 1.66V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns |
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DCG35C1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube Mounting: THT Case: ISO247™ Max. off-state voltage: 1.2kV Load current: 18A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 1kA Max. forward voltage: 2.2V Technology: SiC Features of semiconductor devices: ultrafast switching |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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MCMA35P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V Max. off-state voltage: 1.2kV Load current: 35A Semiconductor structure: double series Kind of package: bulk Case: TO240AA Max. forward voltage: 1.56V Gate current: 78/200mA Mechanical mounting: screw Electrical mounting: screw Type of module: thyristor |
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MDMA35P1200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V Case: TO240AA Electrical mounting: screw Type of module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Load current: 35A Semiconductor structure: double series Max. forward impulse current: 500A Max. forward voltage: 1.1V |
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MCMA35PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.87V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 55A Max. forward voltage: 1.22V Load current: 35A Semiconductor structure: double series Gate current: 78/200mA Max. forward impulse current: 520A Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IXBT42N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: D3PAK Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
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IXBT6N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 1.7kV Power dissipation: 75W Gate charge: 17nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 36A Type of transistor: IGBT Turn-on time: 104ns Kind of package: tube Case: D3PAK Turn-off time: 700ns |
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IXBX75N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.7kV Power dissipation: 1.04kW Gate charge: 350nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 277ns Kind of package: tube Case: PLUS247™ Turn-off time: 840ns |
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IXXH75N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Mounting: THT Kind of package: tube Power dissipation: 750W Gate charge: 107nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 108ns Turn-off time: 315ns Type of transistor: IGBT |
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LIA120STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 85-115%@5mA |
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IXTK22N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: TO264 On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
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IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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IX9907NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Mounting: SMD Kind of package: reel; tape Output current: 1.7A Operating voltage: 650V Integrated circuit features: linear dimming; PWM |
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IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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IX9908NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: reel; tape |
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MCC95-18io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| DLA20IM800PC-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.24V Case: D2PAK Kind of package: tube Max. forward impulse current: 200A Power dissipation: 150W |
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VUO68-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A Version: module Max. off-state voltage: 1.6kV Max. forward voltage: 1.5V Load current: 68A Max. forward impulse current: 300A Electrical mounting: THT Mechanical mounting: screw Type of bridge rectifier: three-phase Case: ECO-PAC 1 Leads: wire Ø 1.5mm |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
на замовлення 1155 шт: термін постачання 21-30 дні (днів) |
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| DPG60B600LB-TUB |
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Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
товар відсутній
| DLA100B1200LB-TRR |
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Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
товар відсутній
| DLA100B1200LB-TUB |
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Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1177.35 грн |
| 3+ | 1033.75 грн |
| 20+ | 1019.22 грн |
| DHG60U1200LB-TRR |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| DHG60U1200LB-TUB |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| LDA200S |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA200STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA201S |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.74 грн |
| 5+ | 89.95 грн |
| 17+ | 47.74 грн |
| 45+ | 44.98 грн |
| LDA201STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA202S |
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Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA202STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA203S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.74 грн |
| 5+ | 88.57 грн |
| 18+ | 46.36 грн |
| 47+ | 44.28 грн |
| LDA203STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| IXTH500N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Mounting: THT
Reverse recovery time: 84ns
Drain-source voltage: 40V
Drain current: 500A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 405nC
Kind of channel: enhanced
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Mounting: THT
Reverse recovery time: 84ns
Drain-source voltage: 40V
Drain current: 500A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 405nC
Kind of channel: enhanced
Case: TO247-3
товар відсутній
| IXFB150N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1809.25 грн |
| 2+ | 1588.68 грн |
| 5+ | 1587.99 грн |
| IXTP80N12T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товар відсутній
| IXTA110N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
товар відсутній
| IXTP110N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.32 грн |
| 9+ | 94.1 грн |
| 24+ | 88.57 грн |
| IXTK102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
| VVZB135-16IOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
товар відсутній
| IXTH02N250 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO247-3
On-state resistance: 450Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO247-3
On-state resistance: 450Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
товар відсутній
| IXTH02N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
товар відсутній
| IXTH04N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 0.4A
Power dissipation: 104W
Case: TO247HV
On-state resistance: 190Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 3kV
Drain current: 0.4A
Power dissipation: 104W
Case: TO247HV
On-state resistance: 190Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
товар відсутній
| IXTH05N250P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 782.42 грн |
| 2+ | 613.05 грн |
| 3+ | 612.36 грн |
| 4+ | 579.15 грн |
| IXTH06N220P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
товар відсутній
| IXTH10N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
товар відсутній
| IXTH10P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.42 грн |
| 3+ | 324.52 грн |
| 7+ | 306.53 грн |
| IXTH10P60 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Reverse recovery time: 0.5µs
Case: TO247-3
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Reverse recovery time: 0.5µs
Case: TO247-3
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
товар відсутній
| IXTH11P50 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
товар відсутній
| IXTH120P065T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 464.98 грн |
| 3+ | 309.99 грн |
| 8+ | 292.69 грн |
| IXTH130N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 571.54 грн |
| 3+ | 361.19 грн |
| 7+ | 341.12 грн |
| IXTH140N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
товар відсутній
| IXTH140P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 552.16 грн |
| 3+ | 392.33 грн |
| 6+ | 371.57 грн |
| IXTH140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 879.29 грн |
| 3+ | 771.51 грн |
| CPC3708ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.61 грн |
| 11+ | 32.8 грн |
| 25+ | 30.24 грн |
| 34+ | 23.53 грн |
| 93+ | 22.83 грн |
| CPC3902ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 578 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.83 грн |
| 11+ | 32.24 грн |
| 25+ | 28.23 грн |
| 36+ | 22.76 грн |
| 97+ | 21.52 грн |
| CPC5602CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 1058 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.08 грн |
| 12+ | 31.41 грн |
| 25+ | 27.82 грн |
| 32+ | 25.05 грн |
| 88+ | 23.66 грн |
| 500+ | 23.25 грн |
| CPC5603CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 1002 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.83 грн |
| 10+ | 35.98 грн |
| 25+ | 31.83 грн |
| 28+ | 28.72 грн |
| 77+ | 27.12 грн |
| 250+ | 26.71 грн |
| MD16200S-DKM2MM |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Max. load current: 310A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Max. load current: 310A
Mechanical mounting: screw
товар відсутній
| MDMA210P1600YD |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXBH12N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Collector current: 12A
Pulsed collector current: 100A
Turn-on time: 460ns
Turn-off time: 705ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
товар відсутній
| DPG60C300PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 360A
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 360A
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
товар відсутній
| DCG35C1200HR |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Mounting: THT
Case: ISO247™
Max. off-state voltage: 1.2kV
Load current: 18A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 1kA
Max. forward voltage: 2.2V
Technology: SiC
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Mounting: THT
Case: ISO247™
Max. off-state voltage: 1.2kV
Load current: 18A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 1kA
Max. forward voltage: 2.2V
Technology: SiC
Features of semiconductor devices: ultrafast switching
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5843.55 грн |
| MCMA35P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Kind of package: bulk
Case: TO240AA
Max. forward voltage: 1.56V
Gate current: 78/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Kind of package: bulk
Case: TO240AA
Max. forward voltage: 1.56V
Gate current: 78/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
товар відсутній
| MDMA35P1200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V
Case: TO240AA
Electrical mounting: screw
Type of module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Max. forward impulse current: 500A
Max. forward voltage: 1.1V
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V
Case: TO240AA
Electrical mounting: screw
Type of module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Max. forward impulse current: 500A
Max. forward voltage: 1.1V
товар відсутній
| MCMA35PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IXBT42N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
товар відсутній
| IXBT6N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
товар відсутній
| IXBX75N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
товар відсутній
| IXXH75N60B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
товар відсутній
| LIA120STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 85-115%@5mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 85-115%@5mA
товар відсутній
| IXTK22N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
| IX9907N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
на замовлення 498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.42 грн |
| 14+ | 60.2 грн |
| 37+ | 56.74 грн |
| 250+ | 56.05 грн |
| IX9907NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Operating voltage: 650V
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Operating voltage: 650V
Integrated circuit features: linear dimming; PWM
товар відсутній
| IX9908N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.55 грн |
| 7+ | 57.43 грн |
| 18+ | 45.67 грн |
| 49+ | 42.9 грн |
| 250+ | 42.21 грн |
| IX9908NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: reel; tape
товар відсутній
| MCC95-18io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| DLA20IM800PC-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 200A
Power dissipation: 150W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.24V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 200A
Power dissipation: 150W
товар відсутній
| VUO68-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Version: module
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 68A
Max. forward impulse current: 300A
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
Leads: wire Ø 1.5mm
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Version: module
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 68A
Max. forward impulse current: 300A
Electrical mounting: THT
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
Leads: wire Ø 1.5mm
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 946.35 грн |
| 3+ | 830.32 грн |
| IX4340N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.3 грн |
| 8+ | 48.02 грн |
| 21+ | 38.06 грн |
| 58+ | 35.98 грн |
| 250+ | 35.08 грн |