| Фото | Назва | Виробник | Інформація |
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IXYX120N120C3 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
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DSSS35-008AR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; 190W; ISOPLUS247™ Mounting: THT Case: ISOPLUS247™ Max. off-state voltage: 80V Max. forward voltage: 0.68V Load current: 35A x2 Semiconductor structure: double series Max. forward impulse current: 600A Power dissipation: 190W Kind of package: tube Type of diode: Schottky rectifying |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| IXYH16N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3 Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 64A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 14ns Turn-off time: 260ns Features of semiconductor devices: high voltage |
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IXYH16N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 126A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 39ns Turn-off time: 541ns Features of semiconductor devices: high voltage |
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IX4340UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
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IXTA26P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXTH26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
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IXTH48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3 Mounting: THT Power dissipation: 462W Polarisation: unipolar Kind of package: tube Gate charge: 103nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO247-3 Reverse recovery time: 260ns Drain-source voltage: -200V Drain current: -48A On-state resistance: 85mΩ Type of transistor: P-MOSFET |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTP26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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IXTQ26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Case: TO3P Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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IXTR48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 93mΩ Drain current: -30A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 190W |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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IXTT48P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 85mΩ Drain current: -48A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 462W |
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DSA120C150QB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; 375W; TO3P; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 60A x2 Power dissipation: 375W Semiconductor structure: common cathode; double Case: TO3P Kind of package: tube Max. forward impulse current: 1.2kA Max. forward voltage: 0.8V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXGK55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
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DSEP40-03AS | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 40A; 35ns; D2PAK; Ufmax: 1.2V; 175W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 40A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: D2PAK Max. forward voltage: 1.2V Max. forward impulse current: 340A Power dissipation: 175W Technology: HiPerFRED™ Kind of package: reel; tape |
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CPC1130N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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CPC1130NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
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CPC1705Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω Type of relay: solid state Max. operating current: 3.25A Switched voltage: max. 60V DC Mounting: THT Case: SOP4 Relay variant: current source Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Turn-on time: 2ms Turn-off time: 12ms Contacts configuration: SPST-NC On-state resistance: 90mΩ Manufacturer series: OptoMOS Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 2.5kV |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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CPC1706Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω Case: SOP4 Operating temperature: -40...85°C Mounting: THT Kind of output: MOSFET Manufacturer series: OptoMOS Turn-off time: 2ms Turn-on time: 5ms Type of relay: solid state Relay variant: current source Switched voltage: max. 60V DC Control current max.: 50mA Body dimensions: 21.08x10.16x3.3mm On-state resistance: 90mΩ Insulation voltage: 2.5kV Contacts configuration: SPST-NO Max. operating current: 4A |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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CPC1708J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; -40÷85°C; 0.08Ω Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C Mounting: THT Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 60V DC Case: i4-pac Max. operating current: 5350mA Turn-off time: 5ms Control current max.: 50mA On-state resistance: 80mΩ Type of relay: solid state |
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CPC1709J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; -40÷85°C Case: ISOPLUS264™ Mounting: THT On-state resistance: 50mΩ Operating temperature: -40...85°C Kind of output: MOSFET Turn-on time: 20ms Turn-off time: 5ms Insulation voltage: 2.5kV Manufacturer series: OptoMOS Body dimensions: 19.91x26.16x5.03mm Contacts configuration: SPST-NO Max. operating current: 11A Type of relay: solid state Relay variant: current source Switched voltage: max. 60V DC Control current max.: 100mA |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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CPC1718J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; -40÷85°C Type of relay: solid state Max. operating current: 8.5A Switched voltage: max. 100V DC Mounting: THT Case: ISOPLUS264™ Relay variant: current source Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Turn-on time: 20ms Turn-off time: 5ms Contacts configuration: SPST-NO On-state resistance: 75mΩ Manufacturer series: OptoMOS Control current max.: 100mA Kind of output: MOSFET Insulation voltage: 2.5kV |
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CPC1726Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; -40÷85°C; 0.75Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 250V DC Relay variant: current source On-state resistance: 0.75Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
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CPC1727J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 4200mA; max.250VDC; THT; ISOPLUS264™; -40÷85°C Type of relay: solid state Max. operating current: 4.2A Switched voltage: max. 250V DC Mounting: THT Case: ISOPLUS264™ Relay variant: current source Body dimensions: 19.91x26.16x5.03mm Operating temperature: -40...85°C Turn-on time: 20ms Turn-off time: 5ms Contacts configuration: SPST-NO On-state resistance: 90mΩ Manufacturer series: OptoMOS Control current max.: 100mA Kind of output: MOSFET Insulation voltage: 2.5kV |
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CPC1777J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; -40÷85°C; 0.5Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 600V DC Relay variant: current source On-state resistance: 0.5Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1779J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; -40÷85°C Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 2A Switched voltage: max. 600V DC Relay variant: current source On-state resistance: 0.4Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1786J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; -40÷85°C; 2Ω Mounting: THT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 19.91x20.88x5.03mm Case: i4-pac Max. operating current: 0.8A On-state resistance: 2Ω Type of relay: solid state Relay variant: current source Switched voltage: max. 1kV DC Insulation voltage: 2.5kV Kind of output: MOSFET Control current max.: 100mA Turn-off time: 5ms Turn-on time: 20ms Contacts configuration: SPST-NO |
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CPC1788J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; -40÷85°C Mounting: THT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 19.91x26.16x5.03mm Case: ISOPLUS264™ Max. operating current: 1.2A On-state resistance: 1.25Ω Type of relay: solid state Relay variant: current source Switched voltage: max. 1kV DC Insulation voltage: 2.5kV Kind of output: MOSFET Control current max.: 100mA Turn-off time: 5ms Turn-on time: 20ms Contacts configuration: SPST-NO |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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CPC1030N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
на замовлення 440 шт: термін постачання 21-30 дні (днів) |
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CPC1030NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
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CPC1125N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms |
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CPC1125NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms |
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IXYH40N65B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 195A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 57ns Turn-off time: 350ns |
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IXYH40N65C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 64ns Turn-off time: 160ns |
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IXYH40N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns |
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IXXH140N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns |
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IXXH140N65C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns |
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IXXX140N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns |
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IXFT15N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO268 On-state resistance: 1.05Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhanced |
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IXTA05N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO263 On-state resistance: 17Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
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IXTA05N100HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO263HV On-state resistance: 17Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 710ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTP05N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Polarisation: unipolar Power dissipation: 40W Type of transistor: N-MOSFET On-state resistance: 17Ω Drain current: 0.75A Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Reverse recovery time: 710ns Kind of channel: enhanced Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
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IXTP05N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns Polarisation: unipolar Power dissipation: 50W Type of transistor: N-MOSFET On-state resistance: 30Ω Drain current: 0.5A Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Reverse recovery time: 750ns Kind of channel: enhanced Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
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IXTA06N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO263 On-state resistance: 34Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
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IXTP06N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.6A Power dissipation: 42W Case: TO220AB On-state resistance: 34Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
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IXDN614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Supply voltage: 4.5...35V Output current: -14...14A Kind of output: non-inverting Operating temperature: -40...125°C Kind of integrated circuit: gate driver; low-side Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 931 шт: термін постачання 21-30 дні (днів) |
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IXDN614SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4.5...35V Kind of output: non-inverting Kind of package: tube Kind of integrated circuit: gate driver; low-side Case: SO8-EP Turn-on time: 140ns Turn-off time: 130ns Output current: -14...14A Type of integrated circuit: driver Number of channels: 1 |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| IXDN614SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
товар відсутній |
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IXDN614YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 309 шт: термін постачання 21-30 дні (днів) |
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IXTA120N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO263 On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 35ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXTA220N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO263 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 45ns |
товар відсутній |
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IXTA220N04T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO263-7 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 45ns |
товар відсутній |
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IXTH420N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Power dissipation: 935W Case: TO247-3 On-state resistance: 2mΩ Mounting: THT Gate charge: 315nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 74ns |
товар відсутній |
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IXTP220N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Power dissipation: 360W Case: TO220AB On-state resistance: 3.5mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 45ns |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXBT12N300HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268 Mounting: SMD Case: TO268 Collector-emitter voltage: 3kV Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™ Collector current: 30A Pulsed collector current: 98A Turn-on time: 64ns Turn-off time: 180ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 160W |
товар відсутній |
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IXGN200N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B Electrical mounting: screw Mechanical mounting: screw Collector current: 160A Power dissipation: 1.25kW Technology: NPT Pulsed collector current: 1.05kA Max. off-state voltage: 1.7kV Type of module: IGBT Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±20V |
товар відсутній |
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DSEI2X101-06A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 96A x2 Case: SOT227B Max. forward voltage: 1.25V Max. forward impulse current: 1.3kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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DSEI2X101-06P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 96A x2 Case: ECO-PAC 2 Max. forward voltage: 1.17V Max. forward impulse current: 1.2kA Electrical mounting: THT Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| IXYX120N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1921.53 грн |
| 2+ | 1687.23 грн |
| MMIX1G120N120A3V1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
| DSSS35-008AR |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; 190W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 80V
Max. forward voltage: 0.68V
Load current: 35A x2
Semiconductor structure: double series
Max. forward impulse current: 600A
Power dissipation: 190W
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; 190W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 80V
Max. forward voltage: 0.68V
Load current: 35A x2
Semiconductor structure: double series
Max. forward impulse current: 600A
Power dissipation: 190W
Kind of package: tube
Type of diode: Schottky rectifying
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 460.64 грн |
| 3+ | 340.03 грн |
| IXYH16N250C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
товар відсутній
| IXYH16N250CV1HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
товар відсутній
| IX4340UE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.81 грн |
| 8+ | 49.03 грн |
| IX4340UETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| IXTA26P20P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 459.87 грн |
| 3+ | 301.21 грн |
| 8+ | 284.68 грн |
| IXTH26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
товар відсутній
| IXTH48P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Power dissipation: 462W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Power dissipation: 462W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 260ns
Drain-source voltage: -200V
Drain current: -48A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 702.19 грн |
| 2+ | 525.51 грн |
| 5+ | 496.75 грн |
| IXTP26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.16 грн |
| 3+ | 352.25 грн |
| 4+ | 281.8 грн |
| 9+ | 265.99 грн |
| IXTQ26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 405.67 грн |
| 3+ | 301.21 грн |
| 8+ | 284.68 грн |
| 30+ | 279.65 грн |
| IXTR48P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 867.86 грн |
| 2+ | 649.15 грн |
| 4+ | 613.93 грн |
| 30+ | 602.43 грн |
| IXTT48P20P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
товар відсутній
| DSA120C150QB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; 375W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Power dissipation: 375W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; 375W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Power dissipation: 375W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 0.8V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| IXGK55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
| DSEP40-03AS |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 40A; 35ns; D2PAK; Ufmax: 1.2V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 40A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.2V
Max. forward impulse current: 340A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 40A; 35ns; D2PAK; Ufmax: 1.2V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 40A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.2V
Max. forward impulse current: 340A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
| CPC1130N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.45 грн |
| 9+ | 100.64 грн |
| CPC1130NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| CPC1705Y |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 541.93 грн |
| 4+ | 240.83 грн |
| 10+ | 227.89 грн |
| CPC1706Y |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Case: SOP4
Operating temperature: -40...85°C
Mounting: THT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Turn-off time: 2ms
Turn-on time: 5ms
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 50mA
Body dimensions: 21.08x10.16x3.3mm
On-state resistance: 90mΩ
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 4A
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Case: SOP4
Operating temperature: -40...85°C
Mounting: THT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Turn-off time: 2ms
Turn-on time: 5ms
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 50mA
Body dimensions: 21.08x10.16x3.3mm
On-state resistance: 90mΩ
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 4A
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.29 грн |
| 6+ | 153.84 грн |
| 16+ | 145.21 грн |
| CPC1708J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; -40÷85°C; 0.08Ω
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; -40÷85°C; 0.08Ω
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
товар відсутній
| CPC1709J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; -40÷85°C
Case: ISOPLUS264™
Mounting: THT
On-state resistance: 50mΩ
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-on time: 20ms
Turn-off time: 5ms
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; -40÷85°C
Case: ISOPLUS264™
Mounting: THT
On-state resistance: 50mΩ
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-on time: 20ms
Turn-off time: 5ms
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 720.77 грн |
| 3+ | 320.62 грн |
| 8+ | 303.37 грн |
| CPC1718J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
| CPC1726Y |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; -40÷85°C; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; -40÷85°C; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| CPC1727J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4200mA; max.250VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 4.2A
Switched voltage: max. 250V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 4200mA; max.250VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 4.2A
Switched voltage: max. 250V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
| CPC1777J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; -40÷85°C; 0.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.5Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; -40÷85°C; 0.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.5Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC1779J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.4Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.4Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC1786J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; -40÷85°C; 2Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Case: i4-pac
Max. operating current: 0.8A
On-state resistance: 2Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; -40÷85°C; 2Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x20.88x5.03mm
Case: i4-pac
Max. operating current: 0.8A
On-state resistance: 2Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
товар відсутній
| CPC1788J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; -40÷85°C
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Case: ISOPLUS264™
Max. operating current: 1.2A
On-state resistance: 1.25Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; -40÷85°C
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Case: ISOPLUS264™
Max. operating current: 1.2A
On-state resistance: 1.25Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1062.96 грн |
| 2+ | 475.9 грн |
| 5+ | 449.3 грн |
| CPC1030N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 192 грн |
| 10+ | 85.55 грн |
| 28+ | 81.23 грн |
| CPC1030NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
| CPC1125N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
| CPC1125NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
| IXYH40N65B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
товар відсутній
| IXYH40N65C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній
| IXYH40N65C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
| IXXH140N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
| IXXH140N65C4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
товар відсутній
| IXXX140N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
| IXFT15N100Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA05N100 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
товар відсутній
| IXTA05N100HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.09 грн |
| 3+ | 223.57 грн |
| 5+ | 177.56 грн |
| 14+ | 168.22 грн |
| IXTP05N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Polarisation: unipolar
Power dissipation: 40W
Type of transistor: N-MOSFET
On-state resistance: 17Ω
Drain current: 0.75A
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Reverse recovery time: 710ns
Kind of channel: enhanced
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Polarisation: unipolar
Power dissipation: 40W
Type of transistor: N-MOSFET
On-state resistance: 17Ω
Drain current: 0.75A
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Reverse recovery time: 710ns
Kind of channel: enhanced
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| IXTP05N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 30Ω
Drain current: 0.5A
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Reverse recovery time: 750ns
Kind of channel: enhanced
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 30Ω
Drain current: 0.5A
Features of semiconductor devices: standard power mosfet
Drain-source voltage: 1kV
Reverse recovery time: 750ns
Kind of channel: enhanced
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| IXTA06N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXTP06N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXDN614CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 4.5...35V
Output current: -14...14A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 4.5...35V
Output current: -14...14A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 931 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.84 грн |
| 3+ | 249.45 грн |
| 4+ | 237.23 грн |
| 10+ | 224.29 грн |
| IXDN614SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...35V
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...35V
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.61 грн |
| 5+ | 186.19 грн |
| 13+ | 175.41 грн |
| IXDN614SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
| IXDN614YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 309 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 375.48 грн |
| 3+ | 314.15 грн |
| 4+ | 237.23 грн |
| 10+ | 224.29 грн |
| IXTA120N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.43 грн |
| IXTA220N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
| IXTA220N04T2-7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
| IXTH420N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
товар відсутній
| IXTP220N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.16 грн |
| 3+ | 191.22 грн |
| 6+ | 145.21 грн |
| 16+ | 137.31 грн |
| IXBT12N300HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Case: TO268
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 160W
товар відсутній
| IXGN200N170 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
товар відсутній
| DSEI2X101-06A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2215.72 грн |
| 2+ | 1945.31 грн |
| DSEI2X101-06P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1791.46 грн |
| 2+ | 1572.92 грн |
| 10+ | 1543.45 грн |