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IXTA230N075T2 IXTA230N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 230A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+467.78 грн
10+ 407 грн
100+ 336.98 грн
IXTA260N055T2-7 IXTA260N055T2-7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta260n055t2-7_datasheet.pdf.pdf Description: MOSFET N-CH 55V 260A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товар відсутній
IXTA27N20T IXTA27N20T IXYS Description: MOSFET N-CH 20V 27A TO-263
товар відсутній
IXTA2N100 IXTA2N100 IXYS IXTP2N100.pdf Description: MOSFET N-CH 1000V 2A TO-263
товар відсутній
IXTA300N04T2 IXTA300N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_300n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товар відсутній
IXTA300N04T2-7 IXTA300N04T2-7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta300n04t2-7_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
300+252.74 грн
Мінімальне замовлення: 300
IXTA36N20T IXTA36N20T IXYS Description: MOSFET N-CH 200V 36A TO-263
товар відсутній
IXTA36N30T IXTA36N30T IXYS Description: MOSFET N-CH 300V 36A TO263
товар відсутній
IXTA38N15T IXTA38N15T IXYS Description: MOSFET N-CH 150V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 150 V
товар відсутній
IXTA3N110 IXTA3N110 IXYS IXT(A,P)3N110,120.pdf Description: MOSFET N-CH 1100V 3A TO-263
товар відсутній
IXTA44N15T IXTA44N15T IXYS Description: MOSFET N-CH 150V 44A TO-263
товар відсутній
IXTA44N25T IXTA44N25T IXYS Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTA44N30T IXTA44N30T IXYS Description: MOSFET N-CH 300V 44A TO263
товар відсутній
IXTA50N25T IXTA50N25T IXYS DS99346A(IXTA-TH-TP-TQ50N25T).pdf Description: MOSFET N-CH 250V 50A TO263
товар відсутній
IXTA54N30T IXTA54N30T IXYS Description: MOSFET N-CH 300V 54A TO-263
товар відсутній
IXTA56N15T IXTA56N15T IXYS IXT(A,P)56N15T.pdf Description: MOSFET N-CH 150V 56A TO263
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
300+190.6 грн
Мінімальне замовлення: 300
IXTA60N20T IXTA60N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
IXTA62N25T IXTA62N25T IXYS Description: MOSFET N-CH 250V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTA72N20T IXTA72N20T IXYS Description: MOSFET N-CH 200V 72A TO-263
товар відсутній
IXTA74N15T IXTA74N15T IXYS Description: MOSFET N-CH 150V 74A TO-263
товар відсутній
IXTA76N25T IXTA76N25T IXYS DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf Description: MOSFET N-CH 250V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 3033 шт:
термін постачання 21-31 дні (днів)
1+412.45 грн
10+ 333.44 грн
100+ 269.79 грн
500+ 225.05 грн
1000+ 192.7 грн
2000+ 181.45 грн
IXTA86N20T IXTA86N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 86A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
1+464.18 грн
10+ 401.6 грн
100+ 329.05 грн
500+ 262.88 грн
1000+ 221.7 грн
IXTC102N20T IXYS Description: MOSFET N-CH 200V ISOPLUS220
товар відсутній
IXTC102N25T IXYS Description: MOSFET N-CH 250V ISOPLUS220
товар відсутній
IXTC130N15T IXYS Description: MOSFET N-CH 150V ISOPLUS220
товар відсутній
IXTC13N50 IXTC13N50 IXYS IXTC13N50.pdf Description: MOSFET N-CH 500V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXTC72N30T IXTC72N30T IXYS Description: MOSFET N-CH 300V 72A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Supplier Device Package: ISOPLUS220™
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTC75N10 IXTC75N10 IXYS IXTC75N10.pdf Description: MOSFET N-CH 100V 72A ISOPLUS220
товар відсутній
IXTD5N100A IXYS Description: MOSFET N-CH 1000V 5A DIE
товар відсутній
IXTE250N10 IXTE250N10 IXYS Description: MOSFET N-CH 100V 250A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A
Power Dissipation (Max): 730W
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 100 V
товар відсутній
IXTH102N25T IXTH102N25T IXYS Description: MOSFET N-CH 250V 102A TO-247
товар відсутній
IXTH120N15T IXTH120N15T IXYS Description: MOSFET N-CH 150V 120A TO247
товар відсутній
IXTH120P065T IXTH120P065T IXYS littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf Description: MOSFET P-CH 65V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+560.47 грн
10+ 487.68 грн
IXTH12N100 IXTH12N100 IXYS 91540.pdf Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товар відсутній
IXTH12N100Q IXTH12N100Q IXYS Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-247 (IXTH)
Drain to Source Voltage (Vdss): 1000 V
товар відсутній
IXTH12N90 IXTH12N90 IXYS IXTH12N90.pdf Description: MOSFET N-CH 900V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH130N15T IXTH130N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
товар відсутній
IXTH13N80 IXTH13N80 IXYS IXTH%2811%2C13%29N80.pdf Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH140P05T IXTH140P05T IXYS littelfuse_discrete_mosfets_p-channel_ixt_140p05t_datasheet.pdf.pdf Description: MOSFET P-CH 50V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+664.66 грн
10+ 548.5 грн
IXTH14N100 IXTH14N100 IXYS 92782.pdf Description: MOSFET N-CH 1000V 14A TO-247
товар відсутній
IXTH14N80 IXTH14N80 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth14n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH150N17T IXTH150N17T IXYS DS99831B(IXTH150N17T).pdf Description: MOSFET N-CH 175V 150A TO-247
товар відсутній
IXTH1N100 IXTH1N100 IXYS 98886.pdf Description: MOSFET N-CH 1000V 1.5A TO-247
товар відсутній
IXTH21N50 IXTH21N50 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_2_n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
IXTH260N055T2 IXTH260N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth260n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 260A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+587.05 грн
IXTH30N25 IXTH30N25 IXYS 98872.pdf Description: MOSFET N-CH 250V 30A TO-247
товар відсутній
IXTH30N50 IXTH30N50 IXYS 94569.pdf Description: MOSFET N-CH 500V 30A TO247
товар відсутній
IXTH30N50L IXTH30N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_30n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A TO247
товар відсутній
IXTH30N50L2 IXTH30N50L2 IXYS LinearL2TM.pdf Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
1+2052.89 грн
30+ 1638.87 грн
120+ 1536.44 грн
IXTH36N20T IXTH36N20T IXYS Description: MOSFET N-CH 200V 36A TO-247
товар відсутній
IXTH40N50L2 IXTH40N50L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTH41N25 IXTH41N25 IXYS 98954.pdf Description: MOSFET N-CH 250V 41A TO-247A
товар відсутній
IXTH44N30T IXTH44N30T IXYS Description: MOSFET N-CH 300V 44A TO-247
товар відсутній
IXTH48N15 IXTH48N15 IXYS 98926.pdf Description: MOSFET N-CH 150V 48A TO-247
товар відсутній
IXTH48N20 IXTH48N20 IXYS 99021.pdf Description: MOSFET N-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IXTH48N20T IXTH48N20T IXYS Description: MOSFET N-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Power Dissipation (Max): 275W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drain to Source Voltage (Vdss): 200 V
товар відсутній
IXTH50N30 IXTH50N30 IXYS 99011.pdf Description: MOSFET N-CH 300V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
товар відсутній
IXTH54N30T IXTH54N30T IXYS Description: MOSFET N-CH 300V 54A TO-247
товар відсутній
IXTH56N15T IXTH56N15T IXYS Description: MOSFET N-CH 150V 56A TO-247
товар відсутній
IXTH60N10 IXTH60N10 IXYS 99069.pdf Description: MOSFET N-CH 100V 60A TO247
товар відсутній
IXTA230N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n075t2_datasheet.pdf.pdf
IXTA230N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 230A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+467.78 грн
10+ 407 грн
100+ 336.98 грн
IXTA260N055T2-7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta260n055t2-7_datasheet.pdf.pdf
IXTA260N055T2-7
Виробник: IXYS
Description: MOSFET N-CH 55V 260A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товар відсутній
IXTA27N20T
IXTA27N20T
Виробник: IXYS
Description: MOSFET N-CH 20V 27A TO-263
товар відсутній
IXTA2N100 IXTP2N100.pdf
IXTA2N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO-263
товар відсутній
IXTA300N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_300n04t2_datasheet.pdf.pdf
IXTA300N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 300A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товар відсутній
IXTA300N04T2-7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta300n04t2-7_datasheet.pdf.pdf
IXTA300N04T2-7
Виробник: IXYS
Description: MOSFET N-CH 40V 300A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+252.74 грн
Мінімальне замовлення: 300
IXTA36N20T
IXTA36N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO-263
товар відсутній
IXTA36N30T
IXTA36N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO263
товар відсутній
IXTA38N15T
IXTA38N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 150 V
товар відсутній
IXTA3N110 IXT(A,P)3N110,120.pdf
IXTA3N110
Виробник: IXYS
Description: MOSFET N-CH 1100V 3A TO-263
товар відсутній
IXTA44N15T
IXTA44N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 44A TO-263
товар відсутній
IXTA44N25T
IXTA44N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTA44N30T
IXTA44N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 44A TO263
товар відсутній
IXTA50N25T DS99346A(IXTA-TH-TP-TQ50N25T).pdf
IXTA50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO263
товар відсутній
IXTA54N30T
IXTA54N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 54A TO-263
товар відсутній
IXTA56N15T IXT(A,P)56N15T.pdf
IXTA56N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 56A TO263
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+190.6 грн
Мінімальне замовлення: 300
IXTA60N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf.pdf
IXTA60N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
IXTA62N25T
IXTA62N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTA72N20T
IXTA72N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO-263
товар відсутній
IXTA74N15T
IXTA74N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 74A TO-263
товар відсутній
IXTA76N25T DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf
IXTA76N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 3033 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+412.45 грн
10+ 333.44 грн
100+ 269.79 грн
500+ 225.05 грн
1000+ 192.7 грн
2000+ 181.45 грн
IXTA86N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n20t_datasheet.pdf.pdf
IXTA86N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 86A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+464.18 грн
10+ 401.6 грн
100+ 329.05 грн
500+ 262.88 грн
1000+ 221.7 грн
IXTC102N20T
Виробник: IXYS
Description: MOSFET N-CH 200V ISOPLUS220
товар відсутній
IXTC102N25T
Виробник: IXYS
Description: MOSFET N-CH 250V ISOPLUS220
товар відсутній
IXTC130N15T
Виробник: IXYS
Description: MOSFET N-CH 150V ISOPLUS220
товар відсутній
IXTC13N50 IXTC13N50.pdf
IXTC13N50
Виробник: IXYS
Description: MOSFET N-CH 500V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXTC72N30T
IXTC72N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 72A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Supplier Device Package: ISOPLUS220™
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTC75N10 IXTC75N10.pdf
IXTC75N10
Виробник: IXYS
Description: MOSFET N-CH 100V 72A ISOPLUS220
товар відсутній
IXTD5N100A
Виробник: IXYS
Description: MOSFET N-CH 1000V 5A DIE
товар відсутній
IXTE250N10
IXTE250N10
Виробник: IXYS
Description: MOSFET N-CH 100V 250A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A
Power Dissipation (Max): 730W
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 100 V
товар відсутній
IXTH102N25T
IXTH102N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 102A TO-247
товар відсутній
IXTH120N15T
IXTH120N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 120A TO247
товар відсутній
IXTH120P065T littelfuse_discrete_mosfets_p-channel_ixt_120p065t_datasheet.pdf.pdf
IXTH120P065T
Виробник: IXYS
Description: MOSFET P-CH 65V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+560.47 грн
10+ 487.68 грн
IXTH12N100 91540.pdf
IXTH12N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товар відсутній
IXTH12N100Q
IXTH12N100Q
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: TO-247 (IXTH)
Drain to Source Voltage (Vdss): 1000 V
товар відсутній
IXTH12N90 IXTH12N90.pdf
IXTH12N90
Виробник: IXYS
Description: MOSFET N-CH 900V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH130N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf
IXTH130N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
товар відсутній
IXTH13N80 IXTH%2811%2C13%29N80.pdf
IXTH13N80
Виробник: IXYS
Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH140P05T littelfuse_discrete_mosfets_p-channel_ixt_140p05t_datasheet.pdf.pdf
IXTH140P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+664.66 грн
10+ 548.5 грн
IXTH14N100 92782.pdf
IXTH14N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO-247
товар відсутній
IXTH14N80 littelfuse_discrete_mosfets_n-channel_standard_ixth14n80_datasheet.pdf.pdf
IXTH14N80
Виробник: IXYS
Description: MOSFET N-CH 800V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
IXTH150N17T DS99831B(IXTH150N17T).pdf
IXTH150N17T
Виробник: IXYS
Description: MOSFET N-CH 175V 150A TO-247
товар відсутній
IXTH1N100 98886.pdf
IXTH1N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.5A TO-247
товар відсутній
IXTH21N50 littelfuse_discrete_mosfets_n-channel_standard_ixt_2_n50_datasheet.pdf.pdf
IXTH21N50
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
IXTH260N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth260n055t2_datasheet.pdf.pdf
IXTH260N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 260A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+587.05 грн
IXTH30N25 98872.pdf
IXTH30N25
Виробник: IXYS
Description: MOSFET N-CH 250V 30A TO-247
товар відсутній
IXTH30N50 94569.pdf
IXTH30N50
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
товар відсутній
IXTH30N50L littelfuse_discrete_mosfets_n-channel_linear_ixt_30n50l_datasheet.pdf.pdf
IXTH30N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
товар відсутній
IXTH30N50L2 LinearL2TM.pdf
IXTH30N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2052.89 грн
30+ 1638.87 грн
120+ 1536.44 грн
IXTH36N20T
IXTH36N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO-247
товар відсутній
IXTH40N50L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf
IXTH40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTH41N25 98954.pdf
IXTH41N25
Виробник: IXYS
Description: MOSFET N-CH 250V 41A TO-247A
товар відсутній
IXTH44N30T
IXTH44N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 44A TO-247
товар відсутній
IXTH48N15 98926.pdf
IXTH48N15
Виробник: IXYS
Description: MOSFET N-CH 150V 48A TO-247
товар відсутній
IXTH48N20 99021.pdf
IXTH48N20
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IXTH48N20T
IXTH48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Power Dissipation (Max): 275W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drain to Source Voltage (Vdss): 200 V
товар відсутній
IXTH50N30 99011.pdf
IXTH50N30
Виробник: IXYS
Description: MOSFET N-CH 300V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
товар відсутній
IXTH54N30T
IXTH54N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 54A TO-247
товар відсутній
IXTH56N15T
IXTH56N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 56A TO-247
товар відсутній
IXTH60N10 99069.pdf
IXTH60N10
Виробник: IXYS
Description: MOSFET N-CH 100V 60A TO247
товар відсутній
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