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IXFN260N17T IXFN260N17T IXYS DS100137(IXFN260N17T).pdf Description: MOSFET N-CH 170V 245A SOT-227
товар відсутній
IXFK260N17T IXFK260N17T IXYS DS100136(IXFK-FX260N17T).pdf Description: MOSFET N-CH 170V 260A TO-264
товар відсутній
IXFX260N17T IXFX260N17T IXYS DS100136(IXFK-FX260N17T).pdf Description: MOSFET N-CH 170V 260A PLUS247
товар відсутній
IXFX170N20T IXFX170N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_170n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
товар відсутній
IXFX230N20T IXFX230N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN230N20T IXFN230N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN180N25T IXFN180N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFK180N25T IXFK180N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+1286.2 грн
25+ 1002.92 грн
100+ 943.92 грн
IXFX180N25T IXFX180N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 574 шт:
термін постачання 21-31 дні (днів)
1+1261.77 грн
10+ 1070.7 грн
100+ 925.98 грн
500+ 787.53 грн
IXFX140N25T IXFX140N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_140n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 140A PLUS247-3
товар відсутній
IXFK120N30T IXFK120N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXFX120N30T IXFX120N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXGR60N60C3C1 IXGR60N60C3C1 IXYS littelfuse_discrete_igbts_pt_ixgr60n60c3c1_datasheet.pdf.pdf Description: IGBT 600V 75A 170W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/70ns
Switching Energy: 830µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 170 W
товар відсутній
IXGA30N60C3C1 IXGA30N60C3C1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGP30N60C3C1 IXGP30N60C3C1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1 IXGH30N60C3C1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH36N60B3C1 IXGH36N60B3C1 IXYS littelfuse_discrete_igbts_pt_ixgh36n60b3c1_datasheet.pdf.pdf Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH48N60B3C1 IXGH48N60B3C1 IXYS littelfuse_discrete_igbts_pt_ixgh48n60b3c1_datasheet.pdf.pdf Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3C1 IXGH48N60C3C1 IXYS littelfuse_discrete_igbts_pt_ixgh48n60c3c1_datasheet.pdf.pdf Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGK100N170 IXGK100N170 IXYS media?resourcetype=datasheets&itemid=d50514ee-b55f-4642-987d-987526d4ab03&filename=littelfuse_discrete_igbts_npt_ixg_100n170_datasheet.pdf Description: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+2830.36 грн
IXFK140N25T IXFK140N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_140n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
IXTY08N100D2 IXTY08N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товар відсутній
IXTY1R6N50D2 IXTY1R6N50D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
IXTP3N100D2 IXTP3N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXTA3N50D2 IXTA3N50D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
1+326.94 грн
10+ 264.32 грн
100+ 213.84 грн
IXBH2N250 IXBH2N250 IXYS littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
1+4439.19 грн
10+ 3873.8 грн
100+ 3473.09 грн
IXTP1R6N100D2 IXTP1R6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+220.59 грн
Мінімальне замовлення: 2
IXTA1R6N100D2 IXTA1R6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
2+247.18 грн
50+ 188.87 грн
100+ 161.89 грн
Мінімальне замовлення: 2
IXTH6N100D2 IXTH6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
1+710.64 грн
30+ 546.44 грн
120+ 488.92 грн
510+ 404.85 грн
IXTA1R6N50D2 IXTA1R6N50D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
2+247.18 грн
50+ 188.87 грн
100+ 161.89 грн
Мінімальне замовлення: 2
IXTY1R6N100D2 IXTY1R6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 4133 шт:
термін постачання 21-31 дні (днів)
2+200.48 грн
10+ 162.19 грн
100+ 131.18 грн
500+ 109.43 грн
1000+ 93.7 грн
2000+ 88.23 грн
Мінімальне замовлення: 2
IXTP3N50D2 IXTP3N50D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
1+298.92 грн
50+ 227.61 грн
100+ 195.08 грн
IXTP6N100D2 IXTP6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
1+610.05 грн
50+ 468.8 грн
100+ 419.44 грн
IXBT2N250 IXBT2N250 IXYS littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5A 32W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+1400.45 грн
10+ 1198.29 грн
100+ 1048.05 грн
IXTH6N50D2 IXTH6N50D2 IXYS DS100177B(IXTA-TP-TH6N50D2).pdf Description: MOSFET N-CH 500V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
1+717.83 грн
30+ 552.05 грн
120+ 493.95 грн
IXBX25N250 IXBX25N250 IXYS littelfuse_discrete_igbts_bimosfet_ixbx25n250_datasheet.pdf.pdf Description: IGBT 2500V 55A 300W PLUS247
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
1+3055.99 грн
10+ 2745.12 грн
100+ 2383.45 грн
IXTA6N100D2 IXTA6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
1+612.92 грн
10+ 506.22 грн
100+ 421.89 грн
IXTA6N50D2 IXTA6N50D2 IXYS DS100177B(IXTA-TP-TH6N50D2).pdf Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+620.83 грн
50+ 477.57 грн
100+ 427.3 грн
500+ 353.83 грн
1000+ 318.44 грн
IXTA3N100D2 IXTA3N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXTP08N100D2 IXTP08N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товар відсутній
IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Description: IGBT 3000V 34A 150W ISOPLUSI4
товар відсутній
IXBH12N300 IXBH12N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf Description: IGBT 3000V 30A 160W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
1+2241.15 грн
30+ 1789.21 грн
120+ 1677.4 грн
IXBF32N300 IXBF32N300 IXYS DS100119(IXBF32N300).pdf Description: IGBT 3000V 40A 160W ISOPLUSI4
товар відсутній
IXBT12N300 IXBT12N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf Description: IGBT 3000V 30A 160W TO268
товар відсутній
IXBF12N300 IXBF12N300 IXYS IXBF12N300.pdf Description: IGBT 3000V 26A 125W ISOPLUSI4
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
IXBK55N300 IXBK55N300 IXYS DS100158A(IXBK-BX55N300).pdf Description: IGBT 3000V 130A 625W TO264
товар відсутній
IXBT20N300 IXBT20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf Description: IGBT 3000V 50A 250W TO268
товар відсутній
IXBH20N300 IXBH20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf Description: IGBT 3000V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXBH32N300 IXBH32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
1+6464.78 грн
30+ 5422.19 грн
120+ 5141.04 грн
IXBT32N300 IXBT32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A 400W TO268
товар відсутній
IXBX55N300 IXBX55N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf Description: IGBT 3000V 130A 625W PLUS247
товар відсутній
LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8621002-T2-960 LDS8621002-T2-960 IXYS LDS8621-_Rev-N1_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8620-002-T2 LDS8620-002-T2 IXYS LDS8620_Rev-N1_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8641-008-T2 LDS8641-008-T2 IXYS Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8641-008-T2 LDS8641-008-T2 IXYS Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 1957 шт:
термін постачання 21-31 дні (днів)
LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8641-008-T2 LDS8641-008-T2 IXYS Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
IXFN260N17T DS100137(IXFN260N17T).pdf
IXFN260N17T
Виробник: IXYS
Description: MOSFET N-CH 170V 245A SOT-227
товар відсутній
IXFK260N17T DS100136(IXFK-FX260N17T).pdf
IXFK260N17T
Виробник: IXYS
Description: MOSFET N-CH 170V 260A TO-264
товар відсутній
IXFX260N17T DS100136(IXFK-FX260N17T).pdf
IXFX260N17T
Виробник: IXYS
Description: MOSFET N-CH 170V 260A PLUS247
товар відсутній
IXFX170N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_170n20t_datasheet.pdf.pdf
IXFX170N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
товар відсутній
IXFX230N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_230n20t_datasheet.pdf.pdf
IXFX230N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN230N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn230n20t_datasheet.pdf.pdf
IXFN230N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFN180N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn180n25t_datasheet.pdf.pdf
IXFN180N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
товар відсутній
IXFK180N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_180n25t_datasheet.pdf.pdf
IXFK180N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1286.2 грн
25+ 1002.92 грн
100+ 943.92 грн
IXFX180N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_180n25t_datasheet.pdf.pdf
IXFX180N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
на замовлення 574 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1261.77 грн
10+ 1070.7 грн
100+ 925.98 грн
500+ 787.53 грн
IXFX140N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_140n25t_datasheet.pdf.pdf
IXFX140N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 140A PLUS247-3
товар відсутній
IXFK120N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n30t_datasheet.pdf.pdf
IXFK120N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXFX120N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_120n30t_datasheet.pdf.pdf
IXFX120N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXGR60N60C3C1 littelfuse_discrete_igbts_pt_ixgr60n60c3c1_datasheet.pdf.pdf
IXGR60N60C3C1
Виробник: IXYS
Description: IGBT 600V 75A 170W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/70ns
Switching Energy: 830µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 170 W
товар відсутній
IXGA30N60C3C1 littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf
IXGA30N60C3C1
Виробник: IXYS
Description: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGP30N60C3C1 littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf
IXGP30N60C3C1
Виробник: IXYS
Description: IGBT 600V 60A 220W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1 littelfuse_discrete_igbts_pt_ixg_30n60c3c1_datasheet.pdf.pdf
IXGH30N60C3C1
Виробник: IXYS
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH36N60B3C1 littelfuse_discrete_igbts_pt_ixgh36n60b3c1_datasheet.pdf.pdf
IXGH36N60B3C1
Виробник: IXYS
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH48N60B3C1 littelfuse_discrete_igbts_pt_ixgh48n60b3c1_datasheet.pdf.pdf
IXGH48N60B3C1
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3C1 littelfuse_discrete_igbts_pt_ixgh48n60c3c1_datasheet.pdf.pdf
IXGH48N60C3C1
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGK100N170 media?resourcetype=datasheets&itemid=d50514ee-b55f-4642-987d-987526d4ab03&filename=littelfuse_discrete_igbts_npt_ixg_100n170_datasheet.pdf
IXGK100N170
Виробник: IXYS
Description: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2830.36 грн
IXFK140N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_140n25t_datasheet.pdf.pdf
IXFK140N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 140A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
IXTY08N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n100_datasheet.pdf.pdf
IXTY08N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товар відсутній
IXTY1R6N50D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf
IXTY1R6N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
IXTP3N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n100_datasheet.pdf.pdf
IXTP3N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXTA3N50D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n50_datasheet.pdf.pdf
IXTA3N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+326.94 грн
10+ 264.32 грн
100+ 213.84 грн
IXBH2N250 littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf
IXBH2N250
Виробник: IXYS
Description: IGBT 2500V 5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4439.19 грн
10+ 3873.8 грн
100+ 3473.09 грн
IXTP1R6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf
IXTP1R6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+220.59 грн
Мінімальне замовлення: 2
IXTA1R6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf
IXTA1R6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+247.18 грн
50+ 188.87 грн
100+ 161.89 грн
Мінімальне замовлення: 2
IXTH6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf
IXTH6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+710.64 грн
30+ 546.44 грн
120+ 488.92 грн
510+ 404.85 грн
IXTA1R6N50D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf
IXTA1R6N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+247.18 грн
50+ 188.87 грн
100+ 161.89 грн
Мінімальне замовлення: 2
IXTY1R6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf
IXTY1R6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
на замовлення 4133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+200.48 грн
10+ 162.19 грн
100+ 131.18 грн
500+ 109.43 грн
1000+ 93.7 грн
2000+ 88.23 грн
Мінімальне замовлення: 2
IXTP3N50D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n50_datasheet.pdf.pdf
IXTP3N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+298.92 грн
50+ 227.61 грн
100+ 195.08 грн
IXTP6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf
IXTP6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+610.05 грн
50+ 468.8 грн
100+ 419.44 грн
IXBT2N250 littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf
IXBT2N250
Виробник: IXYS
Description: IGBT 2500V 5A 32W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1400.45 грн
10+ 1198.29 грн
100+ 1048.05 грн
IXTH6N50D2 DS100177B(IXTA-TP-TH6N50D2).pdf
IXTH6N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+717.83 грн
30+ 552.05 грн
120+ 493.95 грн
IXBX25N250 littelfuse_discrete_igbts_bimosfet_ixbx25n250_datasheet.pdf.pdf
IXBX25N250
Виробник: IXYS
Description: IGBT 2500V 55A 300W PLUS247
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3055.99 грн
10+ 2745.12 грн
100+ 2383.45 грн
IXTA6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf
IXTA6N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+612.92 грн
10+ 506.22 грн
100+ 421.89 грн
IXTA6N50D2 DS100177B(IXTA-TP-TH6N50D2).pdf
IXTA6N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+620.83 грн
50+ 477.57 грн
100+ 427.3 грн
500+ 353.83 грн
1000+ 318.44 грн
IXTA3N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_3n100_datasheet.pdf.pdf
IXTA3N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXTP08N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n100_datasheet.pdf.pdf
IXTP08N100D2
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
товар відсутній
IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Виробник: IXYS
Description: IGBT 3000V 34A 150W ISOPLUSI4
товар відсутній
IXBH12N300 littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf
IXBH12N300
Виробник: IXYS
Description: IGBT 3000V 30A 160W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2241.15 грн
30+ 1789.21 грн
120+ 1677.4 грн
IXBF32N300 DS100119(IXBF32N300).pdf
IXBF32N300
Виробник: IXYS
Description: IGBT 3000V 40A 160W ISOPLUSI4
товар відсутній
IXBT12N300 littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf
IXBT12N300
Виробник: IXYS
Description: IGBT 3000V 30A 160W TO268
товар відсутній
IXBF12N300 IXBF12N300.pdf
IXBF12N300
Виробник: IXYS
Description: IGBT 3000V 26A 125W ISOPLUSI4
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
IXBK55N300 DS100158A(IXBK-BX55N300).pdf
IXBK55N300
Виробник: IXYS
Description: IGBT 3000V 130A 625W TO264
товар відсутній
IXBT20N300 littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf
IXBT20N300
Виробник: IXYS
Description: IGBT 3000V 50A 250W TO268
товар відсутній
IXBH20N300 littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf
IXBH20N300
Виробник: IXYS
Description: IGBT 3000V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
IXBH32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBH32N300
Виробник: IXYS
Description: IGBT 3000V 80A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6464.78 грн
30+ 5422.19 грн
120+ 5141.04 грн
IXBT32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBT32N300
Виробник: IXYS
Description: IGBT 3000V 80A 400W TO268
товар відсутній
IXBX55N300 littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf
IXBX55N300
Виробник: IXYS
Description: IGBT 3000V 130A 625W PLUS247
товар відсутній
LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8621002-T2-960 LDS8621-_Rev-N1_0.pdf
LDS8621002-T2-960
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8620-002-T2 LDS8620_Rev-N1_1.pdf
LDS8620-002-T2
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8641-008-T2
LDS8641-008-T2
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
LDS8641-008-T2
LDS8641-008-T2
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 1957 шт:
термін постачання 21-31 дні (днів)
LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8641-008-T2
LDS8641-008-T2
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
товар відсутній
LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
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