Фото | Назва | Виробник | Інформація |
Доступність |
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IXGT6N170AHV-TRL | IXYS | Description: IXGT6N170AHV TRL |
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IXGT6N170A-TRL | IXYS | Description: IXGT6N170A TRL |
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IXFA44N25X3 | IXYS |
Description: MOSFET N-CH 250V 44A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
на замовлення 1550 шт: термін постачання 21-31 дні (днів) |
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IXFP44N25X3 | IXYS |
Description: MOSFET N-CH 250V 44A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
на замовлення 1550 шт: термін постачання 21-31 дні (днів) |
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IXTH44N25L2 | IXYS |
Description: MOSFET N-CH 250V 44A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V |
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R1158NC26P | IXYS | Description: SCR 2.6KV 2328A W11 |
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CLA100E1200TZ-TUB | IXYS |
Description: THYRISTOR SCR 1200V 100A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - On State (It (AV)) (Max): 100 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-268AA (D3Pak-HV) Part Status: Active Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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IXGK120N60B3 | IXYS |
Description: DISC IGBT PT-MID FREQUENCY TO-26 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 40ns/227ns Switching Energy: 2.9mJ (on), 3.5mJ (off) Test Condition: 480V, 100A, 2Ohm, 15V Gate Charge: 465 nC Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 780 W |
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LSIC2SD120N80PA | IXYS |
Description: DIODE MOD SIC 1200V 75A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 75A (DC) Supplier Device Package: SOT-227B - miniBLOC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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IXFK14N100Q | IXYS |
Description: MOSFET N-CH 1000V 14A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
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DSEK300-06A | IXYS |
Description: PWR DIODE DISC-FRED SOT-227UI(MI Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A Current - Reverse Leakage @ Vr: 3 mA @ 600 V |
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N2055MC260 | IXYS |
Description: SCR 2.6KV 4135A W70 Packaging: Box Package / Case: TO-200AC, K-PUK Mounting Type: Clamp On SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz Current - On State (It (AV)) (Max): 2105 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.47 V Current - Off State (Max): 120 mA Supplier Device Package: W70 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 4135 A Voltage - Off State: 2.6 kV |
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N2055MC280 | IXYS |
Description: SCR 2.8KV 4135A W70 Packaging: Box Package / Case: TO-200AC, K-PUK Mounting Type: Clamp On SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz Current - On State (It (AV)) (Max): 2105 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.47 V Current - Off State (Max): 120 mA Supplier Device Package: W70 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 4135 A Voltage - Off State: 2.8 kV |
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IXFN130N90SK | IXYS | Description: SICARBIDE-DISCRETE MOSFET SOT-22 |
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IXTP86N20X4 | IXYS |
Description: MOSFET 200V 86A N-CH ULTRA TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
на замовлення 17088 шт: термін постачання 21-31 дні (днів) |
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M1494NK250 | IXYS | Description: FAST DIODE |
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DSEP30-12B | IXYS |
Description: DIODE GEN PURP 1.2KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 12pF @ 600V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 465 шт: термін постачання 21-31 дні (днів) |
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MCB60I1200TZ | IXYS |
Description: 1200V 90A SIC POWER MOSFET Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-268AA (D3Pak-HV) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V |
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IXTA12N50P | IXYS |
Description: MOSFET N-CH 500V 12A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
на замовлення 524 шт: термін постачання 21-31 дні (днів) |
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N1366JK120 | IXYS |
Description: SCR 1.2KV 2718A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz Current - On State (It (AV)) (Max): 1366 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.99 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 2718 A Voltage - Off State: 1.2 kV |
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N1366JK140 | IXYS |
Description: SCR 1.4KV 2718A WP1 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz Current - On State (It (AV)) (Max): 1366 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.99 V Current - Off State (Max): 100 mA Supplier Device Package: WP1 Current - On State (It (RMS)) (Max): 2718 A Voltage - Off State: 1.4 kV |
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IXFQ60N25X3 | IXYS |
Description: MOSFET N-CHANNEL 250V 60A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
на замовлення 1713 шт: термін постачання 21-31 дні (днів) |
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IXGM20N60 | IXYS |
Description: IGBT 600V 40A TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 2mJ (on), 3.2mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W |
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IXGM25N100A | IXYS |
Description: IGBT 1000V 50A 200W TO204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 180 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
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IXTH220N20X4 | IXYS |
Description: MOSFET N-CH 200V 220A X4 TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISO TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
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IXTT220N20X4HV | IXYS |
Description: MOSFET N-CH 200V 220A X4 TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268HV (IXTT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
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IXTY1N120PTRL | IXYS | Description: MOSFET N-CH 1200V 1A TO252 |
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IXTA1N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 1A TO263 |
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DSP45-12AZ-TUB | IXYS |
Description: DIODE GEN PURP 1.2KV 45A TO268AA Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 18pF @ 400V, 1MHz Current - Average Rectified (Io): 45A Supplier Device Package: TO-268AA (D3Pak-HV) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
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IXTA94N20X4 | IXYS |
Description: MOSFET 200V 94A N-CH ULTRA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
на замовлення 1152 шт: термін постачання 21-31 дні (днів) |
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IXTA100N15X4 | IXYS |
Description: MOSFET N-CH 150V 100A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CLA30E1200PB | IXYS | Description: SCR 1.2KV 47A TO220AB |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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MEK95-06DA | IXYS |
Description: DIODE MODULE GP 600V 95A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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N1159NC380 | IXYS | Description: SCR 3.8KV 2268A W11 |
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N1159NC420 | IXYS | Description: SCR 4.2KV 2268A W11 |
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MEA75-12DA | IXYS |
Description: DIODE MOD GP 1.2KV 75A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 1200 V |
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MEK150-04DA | IXYS |
Description: DIODE MODULE 400V 150A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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MDD44-16N1B | IXYS |
Description: DIODE MOD GP 1.6KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1600 V |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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IXTH94N20X4 | IXYS |
Description: MOSFET N-CH 200V 94A X4 TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISO TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
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MDMA660U1600PTEH | IXYS |
Description: BIPOLARMODULE-BRIDGE RECTIFIER E Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E3 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 660 A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
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MDMA660U1600PT-PC | IXYS |
Description: MDMA660U1600PTEH-PC Packaging: Box |
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MDMA900U1600PTEH | IXYS |
Description: BIPOLARMODULE-BRIDGE RECTIFIER E Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E3 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 900 A Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
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MDMA900U1600PT-PC | IXYS | Description: MDMA900U1600PTEH-PC |
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VVZ24-12IO1 | IXYS | Description: BRIDGE RECT 3 PHASE 1200V 27A |
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DMA40U1800GU | IXYS |
Description: POWER DIODE DISCRETES-RECTIFIER Packaging: Tube Package / Case: 5-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: GUFP Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
на замовлення 2374 шт: термін постачання 21-31 дні (днів) |
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DMA90U1800LB-TUB | IXYS |
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B Packaging: Tube Package / Case: 9-SMD Module Mounting Type: Surface Mount Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS-SMPD™.B Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
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IXGA28N60A3 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/300ns Switching Energy: 700µJ (on), 2.4mJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 170 A Power - Max: 190 W |
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N1718NC180 | IXYS | Description: SCR 1.8KV 3450A W11 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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N1718NC120 | IXYS | Description: SCR 1.2KV 3450A W11 |
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MCC95-08I01B | IXYS |
Description: DIODE MOD GP 800V 116A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 116A Supplier Device Package: TO-240AA Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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IXTA110N12T2 | IXYS |
Description: MOSFET N-CH 120V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V |
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IXFH80N65X2-4 | IXYS |
Description: MOSFET N-CH 650V 80A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
на замовлення 48840 шт: термін постачання 21-31 дні (днів) |
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IXXH80N65B4D1 | IXYS |
Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/112ns Switching Energy: 3.36mJ (on), 1.83mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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IXFT80N65X2HV-TRL | IXYS |
Description: MOSFET N-CH 650V 80A TO268HV Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
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IXFT80N65X2HV | IXYS |
Description: MOSFET N-CH 650V 80A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V |
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IXFX52N100X | IXYS | Description: MOSFET N-CH 1000V 52A PLUS247 |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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MDD95-16N1B | IXYS | Description: DIODE MODULE 1.6KV 120A TO240AA |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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IXTN400N15X4 | IXYS |
Description: MOSFET N-CH 150V 400A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V |
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IXFH240N15X3 | IXYS | Description: MOSFET N-CH 150V 240A TO247 |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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IXSK30N60CD1 | IXYS |
Description: IGBT 600V 55A 200W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 700µJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
товар відсутній |
IXFA44N25X3 |
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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300+ | 262.93 грн |
IXFP44N25X3 |
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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300+ | 313.98 грн |
IXTH44N25L2 |
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
товар відсутній
CLA100E1200TZ-TUB |
Виробник: IXYS
Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 546.1 грн |
30+ | 420.12 грн |
120+ | 375.89 грн |
IXGK120N60B3 |
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
LSIC2SD120N80PA |
Виробник: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
IXFK14N100Q |
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
DSEK300-06A |
Виробник: IXYS
Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
N2055MC260 |
Виробник: IXYS
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товар відсутній
N2055MC280 |
Виробник: IXYS
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товар відсутній
IXTP86N20X4 |
Виробник: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET 200V 86A N-CH ULTRA TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 17088 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 754.48 грн |
50+ | 588.02 грн |
100+ | 553.44 грн |
500+ | 470.69 грн |
1000+ | 431.74 грн |
DSEP30-12B |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 496.52 грн |
10+ | 431.98 грн |
100+ | 357.63 грн |
MCB60I1200TZ |
Виробник: IXYS
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товар відсутній
IXTA12N50P |
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 524 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 256.52 грн |
50+ | 195.73 грн |
100+ | 167.77 грн |
500+ | 139.95 грн |
N1366JK120 |
Виробник: IXYS
Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товар відсутній
N1366JK140 |
Виробник: IXYS
Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFQ60N25X3 |
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 605.02 грн |
10+ | 499.3 грн |
100+ | 416.1 грн |
500+ | 344.55 грн |
1000+ | 310.09 грн |
IXGM20N60 |
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A |
Виробник: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXTH220N20X4 |
Виробник: IXYS
Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
IXTT220N20X4HV |
Виробник: IXYS
Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
DSP45-12AZ-TUB |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
IXTA94N20X4 |
Виробник: IXYS
Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 574.84 грн |
50+ | 463.76 грн |
IXTA100N15X4 |
Виробник: IXYS
Description: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
Description: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 666.81 грн |
50+ | 512.42 грн |
100+ | 458.48 грн |
500+ | 379.65 грн |
1000+ | 341.68 грн |
CLA30E1200PB |
Виробник: IXYS
Description: SCR 1.2KV 47A TO220AB
Description: SCR 1.2KV 47A TO220AB
на замовлення 71 шт:
термін постачання 21-31 дні (днів)MEK95-06DA |
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2198.04 грн |
10+ | 1952.3 грн |
100+ | 1667.15 грн |
MEA75-12DA |
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
товар відсутній
MEK150-04DA |
Виробник: IXYS
Description: DIODE MODULE 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: DIODE MODULE 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3091.2 грн |
10+ | 2777.15 грн |
MDD44-16N1B |
Виробник: IXYS
Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1911.34 грн |
36+ | 1526.2 грн |
IXTH94N20X4 |
Виробник: IXYS
Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 781.06 грн |
30+ | 608.81 грн |
120+ | 573 грн |
MDMA660U1600PTEH |
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA900U1600PTEH |
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
DMA40U1800GU |
Виробник: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 2374 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1360.93 грн |
10+ | 1165.08 грн |
100+ | 1018.99 грн |
500+ | 816.02 грн |
DMA90U1800LB-TUB |
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
товар відсутній
IXGA28N60A3 |
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товар відсутній
N1718NC180 |
Виробник: IXYS
Description: SCR 1.8KV 3450A W11
Description: SCR 1.8KV 3450A W11
на замовлення 12 шт:
термін постачання 21-31 дні (днів)MCC95-08I01B |
Виробник: IXYS
Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
товар відсутній
IXTA110N12T2 |
Виробник: IXYS
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
товар відсутній
IXFH80N65X2-4 |
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Description: MOSFET N-CH 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 48840 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1053.39 грн |
30+ | 821.49 грн |
120+ | 773.16 грн |
510+ | 657.55 грн |
IXXH80N65B4D1 |
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 750.16 грн |
30+ | 584.57 грн |
120+ | 550.19 грн |
510+ | 467.92 грн |
IXFT80N65X2HV-TRL |
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
товар відсутній
IXFT80N65X2HV |
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Description: MOSFET N-CH 650V 80A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
товар відсутній
IXFX52N100X |
Виробник: IXYS
Description: MOSFET N-CH 1000V 52A PLUS247
Description: MOSFET N-CH 1000V 52A PLUS247
на замовлення 16 шт:
термін постачання 21-31 дні (днів)MDD95-16N1B |
Виробник: IXYS
Description: DIODE MODULE 1.6KV 120A TO240AA
Description: DIODE MODULE 1.6KV 120A TO240AA
на замовлення 128 шт:
термін постачання 21-31 дні (днів)IXTN400N15X4 |
Виробник: IXYS
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
товар відсутній
IXFH240N15X3 |
Виробник: IXYS
Description: MOSFET N-CH 150V 240A TO247
Description: MOSFET N-CH 150V 240A TO247
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)IXSK30N60CD1 |
Виробник: IXYS
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній