| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| N1449QL200 | IXYS |
 Description: SCR 2KV 2790A WP6Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz Current - On State (It (AV)) (Max): 1410 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.65 V Current - Off State (Max): 100 mA Supplier Device Package: WP6 Current - On State (It (RMS)) (Max): 2790 A Voltage - Off State: 2 kV |
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DPG60C300PC-TRL | IXYS |
Description: DIODE ARRAY GP 300V 30A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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DPG60C300PC-TRL | IXYS |
Description: DIODE ARRAY GP 300V 30A TO263AA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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CS19-08HO1S-TUB | IXYS |
Description: SCR 800V 31A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.32 V Current - Off State (Max): 50 µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - On State (It (RMS)) (Max): 31 A Voltage - Off State: 800 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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IXFA90N20X3-TRL | IXYS |
Description: MOSFET N-CH 200V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V |
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IXFA22N65X2-TRL | IXYS |
Description: MOSFET N-CH 650V 22A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MDD72-16N1B | IXYS |
Description: DIODE MOD GP 1600V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 1600 V |
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MDD72-08N1B | IXYS |
Description: DIODE MOD GP 800V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 800 V |
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| IXTD4N80P-3J | IXYS | Description: MOSFET N-CH 800V 3.6A DIE |
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| IXTP120N20X4 | IXYS |
Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 (IXTP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V |
на замовлення 1676 шт: термін постачання 21-31 дні (днів) |
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M0790YC200 | IXYS | Description: FAST DIODE |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| W1263YC250 | IXYS | Description: RECTIFIER DIODE |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| W1263YC160 | IXYS | Description: RECTIFIER DIODE |
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.jpg "IXTX240N075L2") |
IXTX240N075L2 | IXYS |
Description: MOSFET N-CH 75V 240A PLUS247-3 |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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MDD44-14N1B | IXYS |
Description: DIODE MOD GP 1.4KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1400 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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MDD44-18N1B | IXYS |
Description: DIODE MOD GP 1800V 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1800 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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MDD44-12N1B | IXYS |
Description: DIODE MOD GP 1.2KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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MDD44-08N1B | IXYS |
Description: DIODE MODULE GP 800V 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
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MCNA120PD2200TB-NI | IXYS |
Description: BIPOLAR MODULE THYRISTOR/DIODE T Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 120 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 190 A Voltage - Off State: 2.2 kV |
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MCNA120PD2200TB | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 120 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 190 A Voltage - Off State: 2.2 kV |
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| R0736LC20K | IXYS | Description: SCR 2KV 1490A W10 |
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| R0736LC20J | IXYS | Description: SCR 2KV 1490A W10 |
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DPG10IM300UC-TRL | IXYS |
Description: DIODE GEN PURP 300V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
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DPG10IM300UC-TRL | IXYS |
Description: DIODE GEN PURP 300V 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
на замовлення 2492 шт: термін постачання 21-31 дні (днів) |
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| N0530YN220 | IXYS |
Description: SCR 2.2KV 1040A W91 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz Current - On State (It (AV)) (Max): 530 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 3.5 V Current - Off State (Max): 70 mA Supplier Device Package: W91 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 1040 A Voltage - Off State: 2.2 kV |
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MCD95-16io1 | IXYS | Description: BIPOLAR MODULE-THYRISTOR/DIODE T |
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| MCMA110P1600VA | IXYS |
Description: SCR MODULE 1.6KV 110A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 110 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 170 A Voltage - Off State: 1.6 kV |
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DNA30ER2200IY | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO262 |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
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| IXTP76N25TM | IXYS | Description: MOSFET N-CH 250V 76A TO220 |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
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| MMIX1G320N60B3 | IXYS |
Description: IGBT PT 600V 400A 24-SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 66 ns Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 44ns/250ns Switching Energy: 2.7mJ (on), 5mJ (off) Test Condition: 480V, 100A, 1Ohm, 15V Gate Charge: 585 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1000 W |
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IXFN90N170SK | IXYS |
Description: SICFET N-CH 1700V 90A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4V @ 36mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MCC162-14IO1B | IXYS | Description: BIPOLAR MODULE - THYRISTOR Y4-M |
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SV6050NA2RP | IXYS |
Description: AEC-Q GRADE 50 AMP STANDARD HIGH |
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SV6050NA2RP | IXYS |
Description: AEC-Q GRADE 50 AMP STANDARD HIGH |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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SV6050NA2TP | IXYS |
Description: AEC-Q GRADE 50 AMP STANDARD HIGH |
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SV6050RA2TP | IXYS |
Description: AEC-Q GRADE 50 AMP STANDARD HIGH |
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IXFA4N85X | IXYS |
Description: MOSFET N-CH 850V 3.5A TO263 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| DMA120B800LB-TUB | IXYS | Description: BIPOLAR MODULE-BRIDGE RECTIFIER |
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| DMA120B800LB-TRR | IXYS | Description: BIPOLAR MODULE-BRIDGE RECTIFIER |
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| W1263YC200 | IXYS | Description: RECTIFIER DIODE |
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| MDMA60UC1600VC | IXYS | Description: BIPOLAR MODULE - OTHER V1A/B PAC |
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IXTA62N15P-TRL | IXYS |
Description: MOSFET N-CH 150V 62A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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DLA100IM1200TZ-TUB | IXYS |
Description: RECTIFIER 1200V 100A TO-268AA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| IXTH120N20X4 | IXYS |
Description: MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V |
на замовлення 1140 шт: термін постачання 21-31 дні (днів) |
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DMA90U1800LB-TRR | IXYS |
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B Packaging: Tape & Reel (TR) Package / Case: 9-SMD Module Mounting Type: Surface Mount Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS-SMPD™.B Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
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DMA90U1800LB-TRR | IXYS |
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B Packaging: Cut Tape (CT) Package / Case: 9-SMD Module Mounting Type: Surface Mount Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS-SMPD™.B Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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IXTP30N25L2 | IXYS |
Description: MOSFET N-CH 250V 30A TO220AB |
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IXTA32P20T-TRL | IXYS |
Description: MOSFET P-CH 200V 32A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V |
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| N4340TE180 | IXYS | Description: SCR 1.8KV 8545A W82 |
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| N4340TE220 | IXYS | Description: SCR 2.2KV 8545A W82 |
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| N4340TJ180 | IXYS | Description: SCR 1.8KV 8545A W81 |
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| N4340TJ220 | IXYS | Description: SCR 2.2KV 8545A W81 |
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DSEP90-12AZ-TUB | IXYS |
Description: DIODE GEN PURP 1.2KV 90A TO268AA Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Capacitance @ Vr, F: 48pF @ 600V, 1MHz Current - Average Rectified (Io): 90A Supplier Device Package: TO-268AA (D3Pak-HV) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A Current - Reverse Leakage @ Vr: 1 mA @ 1200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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IXGK400N30B3 | IXYS |
Description: IGBT 300V 400A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-264 (IXGK) Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 300 V |
товар відсутній |
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| MDMA60B1200MB | IXYS |
Description: BIPOLAR MODULE - OTHER ECO-PAC1 Packaging: Box |
товар відсутній |
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MDD72-12N1B | IXYS |
Description: DIODE MOD GP 1200V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 1200 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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| IXTQ48N65X2M | IXYS |
Description: DISCRETE MOSFET 48A 650V X2 TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
на замовлення 660 шт: термін постачання 21-31 дні (днів) |
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| IXTQ130N20T | IXYS | Description: MOSFET N-CH 200V 130A TO3P |
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| W2340JK120 | IXYS |
Description: DIODE GEN PURP 1.2KV 2340A W113 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2340A Supplier Device Package: W113 Voltage - DC Reverse (Vr) (Max): 1200 V |
товар відсутній |
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MCMA260PD1800YB | IXYS |
Description: SCR MODULE 1.8KV 260A Y4-M6 Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 260 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 408 A Voltage - Off State: 1.8 kV |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| N1449QL200 |
|
Виробник: IXYS
Description: SCR 2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2 kV
Description: SCR 2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2 kV
товар відсутній
| DPG60C300PC-TRL |
|
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 247.82 грн |
| DPG60C300PC-TRL |
|
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.29 грн |
| 10+ | 331.85 грн |
| 100+ | 268.47 грн |
| CS19-08HO1S-TUB |
|
Виробник: IXYS
Description: SCR 800V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 800 V
Description: SCR 800V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 800 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.31 грн |
| 10+ | 178.87 грн |
| IXFA90N20X3-TRL |
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товар відсутній
| IXFA22N65X2-TRL |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Description: MOSFET N-CH 650V 22A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.83 грн |
| 10+ | 307.77 грн |
| 100+ | 249.01 грн |
| MDD72-16N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1600V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Description: DIODE MOD GP 1600V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
товар відсутній
| MDD72-08N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 800 V
Description: DIODE MOD GP 800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 800 V
товар відсутній
| IXTP120N20X4 |
|
Виробник: IXYS
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 (IXTP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
на замовлення 1676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.25 грн |
| 50+ | 421.19 грн |
| 100+ | 376.86 грн |
| 500+ | 312.06 грн |
| 1000+ | 280.85 грн |
| M0790YC200 |
Виробник: IXYS
Description: FAST DIODE
Description: FAST DIODE
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8293.49 грн |
| 10+ | 7608.18 грн |
| W1263YC250 |
Виробник: IXYS
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6198.2 грн |
| 10+ | 5660.17 грн |
| IXTX240N075L2 |
|
Виробник: IXYS
Description: MOSFET N-CH 75V 240A PLUS247-3
Description: MOSFET N-CH 75V 240A PLUS247-3
на замовлення 300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2641.38 грн |
| 10+ | 2346.35 грн |
| 100+ | 2003.62 грн |
| MDD44-14N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1.4KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
Description: DIODE MOD GP 1.4KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1827.99 грн |
| MDD44-18N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Description: DIODE MOD GP 1800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1993.97 грн |
| MDD44-12N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1744.64 грн |
| 10+ | 1492.71 грн |
| MDD44-08N1B |
|
Виробник: IXYS
Description: DIODE MODULE GP 800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE GP 800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
товар відсутній
| MCNA120PD2200TB-NI |
Виробник: IXYS
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCNA120PD2200TB |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
товар відсутній
| DPG10IM300UC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 300V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
| DPG10IM300UC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 300V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE GEN PURP 300V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.21 грн |
| 10+ | 105.73 грн |
| 100+ | 84.17 грн |
| 500+ | 66.84 грн |
| 1000+ | 56.71 грн |
| N0530YN220 |
Виробник: IXYS
Description: SCR 2.2KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.2 kV
Description: SCR 2.2KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.2 kV
товар відсутній
| MCMA110P1600VA |
|
Виробник: IXYS
Description: SCR MODULE 1.6KV 110A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 110A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
товар відсутній
| DNA30ER2200IY |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO262
Description: DIODE GEN PURP 2.2KV 30A TO262
на замовлення 149 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 366.46 грн |
| 10+ | 316.77 грн |
| 100+ | 259.51 грн |
| IXTP76N25TM |
Виробник: IXYS
Description: MOSFET N-CH 250V 76A TO220
Description: MOSFET N-CH 250V 76A TO220
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 300.81 грн |
| MMIX1G320N60B3 |
|
Виробник: IXYS
Description: IGBT PT 600V 400A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1000 W
Description: IGBT PT 600V 400A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1000 W
товар відсутній
| IXFN90N170SK |
|
Виробник: IXYS
Description: SICFET N-CH 1700V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 36mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
Description: SICFET N-CH 1700V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 36mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21462.32 грн |
| SV6050NA2RP |
|
Виробник: IXYS
Description: AEC-Q GRADE 50 AMP STANDARD HIGH
Description: AEC-Q GRADE 50 AMP STANDARD HIGH
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 545.38 грн |
| 10+ | 474.39 грн |
| 100+ | 392.76 грн |
| IXFA4N85X |
|
Виробник: IXYS
Description: MOSFET N-CH 850V 3.5A TO263
Description: MOSFET N-CH 850V 3.5A TO263
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 308.26 грн |
| 10+ | 266.88 грн |
| IXTA62N15P-TRL |
Виробник: IXYS
Description: MOSFET N-CH 150V 62A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 150V 62A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 197.97 грн |
| DLA100IM1200TZ-TUB |
|
Виробник: IXYS
Description: RECTIFIER 1200V 100A TO-268AA
Description: RECTIFIER 1200V 100A TO-268AA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.31 грн |
| IXTH120N20X4 |
|
Виробник: IXYS
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 665.38 грн |
| 30+ | 511.46 грн |
| 120+ | 457.62 грн |
| 510+ | 378.94 грн |
| 1020+ | 341.04 грн |
| DMA90U1800LB-TRR |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
товар відсутній
| DMA90U1800LB-TRR |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1856.73 грн |
| 10+ | 1648.67 грн |
| 100+ | 1407.88 грн |
| IXTA32P20T-TRL |
Виробник: IXYS
Description: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Description: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
товар відсутній
| DSEP90-12AZ-TUB |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 783.94 грн |
| 10+ | 694.01 грн |
| IXGK400N30B3 |
Виробник: IXYS
Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
| MDMA60B1200MB |
товар відсутній
| MDD72-12N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1200V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
Description: DIODE MOD GP 1200V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2348.93 грн |
| 36+ | 1875.39 грн |
| IXTQ48N65X2M |
Виробник: IXYS
Description: DISCRETE MOSFET 48A 650V X2 TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: DISCRETE MOSFET 48A 650V X2 TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
на замовлення 660 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 716.97 грн |
| W2340JK120 |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 2340A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2340A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 1200 V
Description: DIODE GEN PURP 1.2KV 2340A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2340A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 1200 V
товар відсутній
| MCMA260PD1800YB |
|
Виробник: IXYS
Description: SCR MODULE 1.8KV 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 260 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 408 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 260 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 408 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6866.45 грн |