Виробник: MULTICOMP PRO
Description: MULTICOMP PRO - BD179 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-126, Durchsteckmontage
tariffCode: 85412900
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Anzahl der Pins: 3Pin(s)
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C

Виробник: ONSEMI
Description: ONSEMI - BD17910STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

Виробник: Fairchild Semiconductor
Description: TRANS NPN 80V 3A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W

Виробник: ONSEMI
Description: ONSEMI - BD179G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-225, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 63hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-225
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C

Виробник: On Semiconductor
TO-126 PBF

Виробник: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 90W; TO127
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 90W
Case: TO127
Current gain: 5...100
Mounting: THT

Транзистори > Біполярні NPN
Корпус: TO-126
fT: 3 MHz
Uceo,V: 80 V
Ic,A: 3 А
h21: 100
Монтаж: THT

Транзистори > Біполярні NPN

Виробник: STMicroelectronics
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) SOT-32 Tube

Виробник: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Purpose Sw

Виробник: STMicroelectronics
Description: TRANS NPN 80V 3A SOT32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A
Supplier Device Package: SOT-32
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W

Виробник: onsemi
Bipolar Transistors - BJT 3A 80V 30W NPN

Виробник: onsemi
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W

Виробник: Winchester Interconnect
Description: TOOL HAND CRIMPER COAX SIDE
Packaging: Box
For Use With/Related Products: Coaxial, RF - BNC
Tool Type: Hand Crimper
Part Status: Active
Tool Method: Manual
Ratcheting: No Ratchet
Wire Entry Location: Side Entry

Виробник: onsemi
Description: TRANS NPN 80V 3A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W

Виробник: ON Semiconductor
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-126 Tube

Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz

Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
кількість в упаковці: 1 шт

Виробник: ON Semiconductor
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-225 Box

Виробник: onsemi
Bipolar Transistors - BJT 3A 80V 30W NPN

Виробник: onsemi
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W