| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PTVS10VP1UP,115 | NEXPERIA |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
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PTVS10VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C |
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PTVS10VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
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PTVS10VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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PTVS10VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 148A Semiconductor structure: unidirectional Case: DFN3 Mounting: SMD Leakage current: 2µA |
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PTVS11VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
на замовлення 1202 шт: термін постачання 21-30 дні (днів) |
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PTVS11VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
на замовлення 564 шт: термін постачання 21-30 дні (днів) |
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PTVS11VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C |
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PTVS12VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
на замовлення 2907 шт: термін постачання 21-30 дні (днів) |
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PTVS12VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C |
на замовлення 2021 шт: термін постачання 21-30 дні (днів) |
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PTVS12VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C |
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| PTVS12VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Semiconductor structure: unidirectional Case: SOT1061 Mounting: SMD Leakage current: 50nA |
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PTVS14VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PTVS14VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS14VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 405 шт: термін постачання 21-30 дні (днів) |
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PTVS14VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS15VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 3389 шт: термін постачання 21-30 дні (днів) |
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PTVS15VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
на замовлення 2130 шт: термін постачання 21-30 дні (днів) |
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| PTVS15VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Semiconductor structure: unidirectional Case: SOT1061 Mounting: SMD Leakage current: 50nA |
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PTVS16VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 18.75V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 2475 шт: термін постачання 21-30 дні (днів) |
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PTVS16VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 18.75V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 2030 шт: термін постачання 21-30 дні (днів) |
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PTVS16VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 18.75V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
на замовлення 1415 шт: термін постачання 21-30 дні (днів) |
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PTVS17VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PTVS17VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 21.7A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS17VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 2735 шт: термін постачання 21-30 дні (днів) |
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PTVS18VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 21V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PTVS18VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 21V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS18VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 21V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PTVS18VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 21V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS18VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 18V Breakdown voltage: 21V Max. forward impulse current: 97A Semiconductor structure: unidirectional Case: DFN3 Mounting: SMD Leakage current: 1µA |
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PTVS20VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 23.35V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PTVS20VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 23.35V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS20VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 23.35V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 2530 шт: термін постачання 21-30 дні (днів) |
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PTVS20VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 23.35V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C |
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PTVS22VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 25.6V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 1205 шт: термін постачання 21-30 дні (днів) |
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PTVS22VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 25.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
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PMV100XPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A Mounting: SMD Case: SOT23; TO236AB Drain current: -1.5A On-state resistance: 187mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 6nC Kind of channel: enhanced Pulsed drain current: -10A Drain-source voltage: -20V |
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PMV130ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 1.5A Pulsed drain current: 8A Case: SOT23; TO236AB On-state resistance: 233mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
на замовлення 1262 шт: термін постачання 21-30 дні (днів) |
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PMV27UPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -18A Case: SOT23; TO236AB On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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PMV27UPER | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -18A Case: SOT23; TO236AB On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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PMV65ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 1.7A Pulsed drain current: 11A Case: SOT23; TO236AB On-state resistance: 136mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
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PMV65UNER | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.8A Pulsed drain current: 11A Case: SOT23; TO236AB On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 13735 шт: термін постачання 21-30 дні (днів) |
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| PMDXB550UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| PMDXB950UPEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -300mA Pulsed drain current: -2A Case: DFN1010B-6; SOT1216 On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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NZH30C,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123F; Ifmax: 250mA Tolerance: ±2.5% Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward voltage: 0.9V Power dissipation: 0.5W Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 0.04µA Zener voltage: 30V Type of diode: Zener |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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NZH13B,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; Ifmax: 250mA Tolerance: ±2.5% Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward voltage: 0.9V Power dissipation: 0.5W Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 0.04µA Zener voltage: 13V Type of diode: Zener |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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| 74LVT125D,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; SO14; LVT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: BiCMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVT |
товар відсутній |
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74LVT125PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: BiCMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: LVT |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
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PHP45NQ10T,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Pulsed drain current: 188A Power dissipation: 150W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
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PMV160UP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.8A Power dissipation: 0.48W Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 4974 шт: термін постачання 21-30 дні (днів) |
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PMV240SPR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.8A Pulsed drain current: -5A Case: SOT23; TO236AB Gate-source voltage: ±25V On-state resistance: 840mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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PMV28XPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PMV30XPAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PMV37EN2R | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.8A Pulsed drain current: 16A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PMV45EN2VL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced |
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PMV50UPE,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -12.8A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 96mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PMV75UP,215 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -10A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 146mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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BZX84J-B5V1,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 5.1V; SMD; reel,tape; SOD323F; Ifmax: 250mA Case: SOD323F Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Power dissipation: 0.55W Max. load current: 0.25A Kind of package: reel; tape Semiconductor structure: single diode Zener voltage: 5.1V Type of diode: Zener |
товар відсутній |
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BCW66FR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5175 шт: термін постачання 21-30 дні (днів) |
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BCW66GR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 13110 шт: термін постачання 21-30 дні (днів) |
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| PTVS10VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.59 грн |
| 25+ | 15.22 грн |
| 74+ | 10.88 грн |
| 203+ | 10.29 грн |
| PTVS10VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
товар відсутній
| PTVS10VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
товар відсутній
| PTVS10VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.15 грн |
| 34+ | 10.38 грн |
| 100+ | 9.41 грн |
| 101+ | 8 грн |
| PTVS10VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
товар відсутній
| PTVS11VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
на замовлення 1202 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.12 грн |
| 27+ | 12.94 грн |
| 87+ | 9.3 грн |
| 237+ | 8.79 грн |
| PTVS11VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
на замовлення 564 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.85 грн |
| 36+ | 9.69 грн |
| 100+ | 8.79 грн |
| 103+ | 7.84 грн |
| 281+ | 7.42 грн |
| PTVS11VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
товар відсутній
| PTVS12VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
на замовлення 2907 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 22.35 грн |
| 25+ | 14.67 грн |
| 70+ | 11.49 грн |
| 192+ | 10.86 грн |
| PTVS12VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
на замовлення 2021 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.12 грн |
| 34+ | 10.24 грн |
| 100+ | 9.27 грн |
| 110+ | 7.33 грн |
| 301+ | 6.93 грн |
| PTVS12VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
товар відсутній
| PTVS12VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
товар відсутній
| PTVS14VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PTVS14VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS14VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.85 грн |
| 36+ | 9.69 грн |
| 100+ | 8.72 грн |
| 114+ | 7.03 грн |
| 314+ | 6.65 грн |
| PTVS14VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS15VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 3389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 19.9 грн |
| 33+ | 10.72 грн |
| 100+ | 9.48 грн |
| 110+ | 7.33 грн |
| 301+ | 6.93 грн |
| PTVS15VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
на замовлення 2130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.15 грн |
| 35+ | 10.1 грн |
| 100+ | 9.06 грн |
| 104+ | 7.75 грн |
| 285+ | 7.33 грн |
| PTVS15VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7÷18.5V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
товар відсутній
| PTVS16VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18.75V; 23.1A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 2475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.83 грн |
| 25+ | 14.53 грн |
| 78+ | 10.38 грн |
| 213+ | 9.83 грн |
| PTVS16VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 2030 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.6 грн |
| 35+ | 10.1 грн |
| 100+ | 9 грн |
| 112+ | 7.22 грн |
| 306+ | 6.82 грн |
| PTVS16VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
на замовлення 1415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.41 грн |
| 34+ | 10.24 грн |
| 100+ | 9.27 грн |
| 103+ | 7.82 грн |
| 282+ | 7.39 грн |
| PTVS17VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PTVS17VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 21.7A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 21.7A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS17VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 2735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.85 грн |
| 36+ | 9.69 грн |
| 100+ | 8.79 грн |
| 109+ | 7.37 грн |
| 299+ | 6.97 грн |
| PTVS18VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PTVS18VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 21V; 20.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS18VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PTVS18VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 21V; 13.7A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS18VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 21V; 97A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 21V
Max. forward impulse current: 97A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 1µA
товар відсутній
| PTVS20VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PTVS20VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 23.35V; 18.5A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS20VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 2530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.85 грн |
| 36+ | 9.69 грн |
| 100+ | 8.79 грн |
| 114+ | 7.03 грн |
| 314+ | 6.65 грн |
| PTVS20VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
товар відсутній
| PTVS22VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 25.6V; 16.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 1205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.6 грн |
| 27+ | 12.94 грн |
| 87+ | 9.3 грн |
| 237+ | 8.79 грн |
| PTVS22VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 25.6V; 11.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 25.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
товар відсутній
| PMV100XPEAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.5A
On-state resistance: 187mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 6nC
Kind of channel: enhanced
Pulsed drain current: -10A
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; Idm: -10A
Mounting: SMD
Case: SOT23; TO236AB
Drain current: -1.5A
On-state resistance: 187mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 6nC
Kind of channel: enhanced
Pulsed drain current: -10A
Drain-source voltage: -20V
товар відсутній
| PMV130ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.5A; Idm: 8A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.5A
Pulsed drain current: 8A
Case: SOT23; TO236AB
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
на замовлення 1262 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 11.7 грн |
| 37+ | 9.48 грн |
| 100+ | 8.51 грн |
| 120+ | 6.62 грн |
| 329+ | 6.25 грн |
| PMV27UPEAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMV27UPER |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -18A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.8A
Pulsed drain current: -18A
Case: SOT23; TO236AB
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMV65ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 1.7A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 1.7A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; logic level
товар відсутній
| PMV65UNER |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.8A; Idm: 11A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.8A
Pulsed drain current: 11A
Case: SOT23; TO236AB
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 13735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.67 грн |
| 45+ | 8.3 грн |
| 100+ | 7.47 грн |
| 135+ | 6.11 грн |
| 360+ | 5.78 грн |
| PMDXB550UNEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMDXB950UPEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| NZH30C,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 30V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 30V
Type of diode: Zener
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.57 грн |
| 90+ | 4.77 грн |
| 225+ | 3.62 грн |
| 610+ | 3.42 грн |
| NZH13B,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 13V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Tolerance: ±2.5%
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.5W
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 0.04µA
Zener voltage: 13V
Type of diode: Zener
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.82 грн |
| 120+ | 3.27 грн |
| 340+ | 2.48 грн |
| 900+ | 2.34 грн |
| 74LVT125D,118 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; SO14; LVT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; SO14; LVT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
товар відсутній
| 74LVT125PW,118 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; BiCMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: BiCMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVT
на замовлення 1742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 29.55 грн |
| 14+ | 26.16 грн |
| 25+ | 22.28 грн |
| 60+ | 13.35 грн |
| 165+ | 12.59 грн |
| PHP45NQ10T,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 150W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 150W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| PMV160UP,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.8A
Power dissipation: 0.48W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 4974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 13.56 грн |
| 51+ | 6.85 грн |
| 100+ | 6.16 грн |
| 172+ | 4.64 грн |
| 472+ | 4.39 грн |
| PMV240SPR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -100V; -800mA; Idm: -5A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Pulsed drain current: -5A
Case: SOT23; TO236AB
Gate-source voltage: ±25V
On-state resistance: 840mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV28XPEAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.2A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV30XPAR |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -20A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV37EN2R |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.8A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.8A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV45EN2VL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV50UPE,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -12.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -12.8A
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMV75UP,215 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BZX84J-B5V1,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 5.1V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.55W
Max. load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.1V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 5.1V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.55W
Max. load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 5.1V
Type of diode: Zener
товар відсутній
| BCW66FR |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.87 грн |
| 175+ | 2.03 грн |
| 500+ | 1.83 грн |
| 575+ | 1.4 грн |
| 1600+ | 1.32 грн |
| BCW66GR |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 13110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.4 грн |
| 200+ | 1.83 грн |
| 500+ | 1.62 грн |
| 575+ | 1.4 грн |
| 1600+ | 1.32 грн |