| Фото | Назва | Виробник | Інформація |
Доступність |
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| 74LCX16244MTDX | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Case: TSSOP48 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 20µA |
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| 74VCX16244MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; VCX Case: TSSOP48 Mounting: SMD Kind of package: reel; tape Manufacturer series: VCX Operating temperature: -40...85°C Kind of integrated circuit: buffer; line driver; non-inverting Type of integrated circuit: digital Kind of output: 3-state Supply voltage: 1.2...3.6V DC Quiescent current: 20µA Number of channels: 16 |
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| 74LCXZ16244MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 16bit,3-state,buffer,line driver; Ch: 16; CMOS; SMD Kind of package: reel; tape Manufacturer series: LCXZ Supply voltage: 2.7...3.6V DC Type of integrated circuit: digital Number of channels: 16 Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Technology: CMOS Kind of integrated circuit: 3-state; 16bit; buffer; line driver Family: LCXZ Mounting: SMD Operating temperature: -40...85°C Case: TSSOP48 |
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| M74LCX16244DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Case: TSSOP48 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
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MC74LCX16244DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Case: TSSOP48 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MC14060BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Mounting: SMD Technology: CMOS Kind of integrated circuit: 14bit; binary counter; oscillator Case: SO16 Type of integrated circuit: digital |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC245DWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Family: VHC |
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| MC74VHC245DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC |
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| NRVTS1560PFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15A; TO277; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.64V Case: TO277 Kind of package: reel; tape Max. forward impulse current: 200A Application: automotive industry |
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FQA8N100C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Power dissipation: 225W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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FQH8N100C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247 Mounting: THT Case: TO247 Kind of package: tube Power dissipation: 225W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 5A On-state resistance: 1.45Ω Type of transistor: N-MOSFET |
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FCH165N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 69A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced |
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DF04M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Max. off-state voltage: 0.4kV Load current: 1.5A Features of semiconductor devices: glass passivated Case: MDIP4L Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.1V Type of bridge rectifier: single-phase Electrical mounting: THT |
на замовлення 1760 шт: термін постачання 21-30 дні (днів) |
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LP2951CD-3.3R2G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...29V Manufacturer series: LP2951 |
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LP2951CDR2G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.35V Output voltage: 1.235...30V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 0...30V Manufacturer series: LP2951 |
на замовлення 4015 шт: термін постачання 21-30 дні (днів) |
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MC33164D-3G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8 Operating temperature: -40...125°C Mounting: SMD Kind of package: tube Case: SO8 DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: Supervisor Integrated Circuit Maximum output current: 30mA Active logical level: low Kind of RESET output: open collector Threshold on-voltage: 2.71V Kind of integrated circuit: power on reset monitor (PoR) |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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MC33164D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8 Operating temperature: -40...125°C Mounting: SMD Kind of package: tube Case: SO8 DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: Supervisor Integrated Circuit Maximum output current: 50mA Active logical level: low Kind of RESET output: open collector Threshold on-voltage: 4.33V Kind of integrated circuit: power on reset monitor (PoR) |
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FDP3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| FCH041N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Pulsed drain current: 231A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhanced |
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| FCH041N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
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| FCH041N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
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| N93C66BT3ETAG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT93C66VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAV93C66VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| CAV93C66YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Clock frequency: 2MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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BC817-40WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2960 шт: термін постачання 21-30 дні (днів) |
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SBC817-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SBC817-40LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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NTHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced |
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NTH4L040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 232A Power dissipation: 160W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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SBC847BPDW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| MC74AC574DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of output: 3-state |
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| MC74AC574DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered |
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| 2SC5488A-TL-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.1W; SC81 Kind of package: reel; tape Case: SC81 Frequency: 5...7GHz Collector current: 70mA Mounting: SMD Collector-emitter voltage: 10V Power dissipation: 0.1W Polarisation: bipolar Kind of transistor: RF Application: automotive industry Type of transistor: NPN Current gain: 90...200 |
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FDC6318P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2906 шт: термін постачання 21-30 дні (днів) |
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FDG6304P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.41A Power dissipation: 0.3W Case: SC70-6 Gate-source voltage: ±8V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1910 шт: термін постачання 21-30 дні (днів) |
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| NCP2820FCT1G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω Kind of package: reel; tape Mounting: SMD Supply voltage: 2.5...5.5V DC Output power: 2.65W Type of integrated circuit: audio amplifier Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Impedance: 4Ω Amplifier class: D Case: flip chip9 |
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| NCP2820MUTBG | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8 Kind of package: reel; tape Mounting: SMD Supply voltage: 2.5...5.5V DC Output power: 2.65W Type of integrated circuit: audio amplifier Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Impedance: 4Ω Amplifier class: D Case: uDFN8 |
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| FR014H5JZ | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection Max. forward impulse current: 0.8A Breakdown voltage: 30V Kind of package: reel; tape Type of diode: diode arrays Features of semiconductor devices: ESD protection Mounting: SMD Case: WDFN8 |
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NUP4114UCLW1T2G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
на замовлення 991 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT139ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD Type of integrated circuit: digital Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Operating temperature: -55...125°C |
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NC7SP157P6X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Case: SC88 Manufacturer series: TinyLogic Technology: CMOS Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: multiplexer Family: NC Mounting: SMD Number of inputs: 3 Type of integrated circuit: digital |
на замовлення 1965 шт: термін постачання 21-30 дні (днів) |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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CAT24C08TDI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Clock frequency: 400kHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C08WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C08YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAV24C08WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| CAV24C08YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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FDS6673BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC6675BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -20A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 36W Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -32A Mounting: SMD Case: WDFN8 |
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| FDMS6673BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
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| SS33 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A Power dissipation: 2.27W |
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NCV8405ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223 Supply voltage: 42V DC On-state resistance: 0.46Ω Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: low-side Mounting: SMD Case: SOT223 |
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NCV8406ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC |
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NCV8450ASTT3G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 3Ω Kind of package: reel; tape Supply voltage: 4.5...45V DC |
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NCV8452STT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5mA Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.4Ω Kind of package: reel; tape Supply voltage: 5...34V DC |
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NCV8460ADR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.4Ω Kind of package: reel; tape Supply voltage: 6...36V DC |
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NCV8461DR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.7Ω Kind of package: reel; tape Supply voltage: 5...34V DC |
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MC74HC11ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
товар відсутній |
| 74LCX16244MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 20µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 20µA
товар відсутній
| 74VCX16244MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; VCX
Case: TSSOP48
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Kind of integrated circuit: buffer; line driver; non-inverting
Type of integrated circuit: digital
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Quiescent current: 20µA
Number of channels: 16
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; VCX
Case: TSSOP48
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VCX
Operating temperature: -40...85°C
Kind of integrated circuit: buffer; line driver; non-inverting
Type of integrated circuit: digital
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Quiescent current: 20µA
Number of channels: 16
товар відсутній
| 74LCXZ16244MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,buffer,line driver; Ch: 16; CMOS; SMD
Kind of package: reel; tape
Manufacturer series: LCXZ
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Technology: CMOS
Kind of integrated circuit: 3-state; 16bit; buffer; line driver
Family: LCXZ
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP48
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,buffer,line driver; Ch: 16; CMOS; SMD
Kind of package: reel; tape
Manufacturer series: LCXZ
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Technology: CMOS
Kind of integrated circuit: 3-state; 16bit; buffer; line driver
Family: LCXZ
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP48
товар відсутній
| M74LCX16244DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
| MC74LCX16244DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.96 грн |
| 14+ | 57.43 грн |
| MC14060BDG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: SO16
Type of integrated circuit: digital
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: SO16
Type of integrated circuit: digital
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.52 грн |
| 11+ | 31.62 грн |
| 37+ | 21.8 грн |
| MC74VHC245DWG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: VHC
товар відсутній
| MC74VHC245DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| NRVTS1560PFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 200A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15A; TO277; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Case: TO277
Kind of package: reel; tape
Max. forward impulse current: 200A
Application: automotive industry
товар відсутній
| FQA8N100C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQH8N100C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
товар відсутній
| FCH165N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| DF04M |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 0.4kV
Load current: 1.5A
Features of semiconductor devices: glass passivated
Case: MDIP4L
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Type of bridge rectifier: single-phase
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 0.4kV
Load current: 1.5A
Features of semiconductor devices: glass passivated
Case: MDIP4L
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Type of bridge rectifier: single-phase
Electrical mounting: THT
на замовлення 1760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.81 грн |
| 25+ | 20.76 грн |
| 50+ | 16.19 грн |
| 136+ | 15.29 грн |
| LP2951CD-3.3R2G | |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...29V
Manufacturer series: LP2951
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...29V
Manufacturer series: LP2951
товар відсутній
| LP2951CDR2G |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 0...30V
Manufacturer series: LP2951
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 0...30V
Manufacturer series: LP2951
на замовлення 4015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 38.75 грн |
| 12+ | 28.92 грн |
| 25+ | 22.35 грн |
| 47+ | 17.16 грн |
| 129+ | 16.19 грн |
| 1000+ | 15.98 грн |
| 2500+ | 15.64 грн |
| MC33164D-3G | |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: tube
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 30mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: tube
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 30mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.74 грн |
| 12+ | 29.82 грн |
| 25+ | 26.36 грн |
| 33+ | 24.36 грн |
| MC33164D-5G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: tube
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open collector; 1÷10VDC; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: tube
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Maximum output current: 50mA
Active logical level: low
Kind of RESET output: open collector
Threshold on-voltage: 4.33V
Kind of integrated circuit: power on reset monitor (PoR)
товар відсутній
| FDP3632 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.27 грн |
| 3+ | 190.28 грн |
| 6+ | 146 грн |
| 16+ | 137.7 грн |
| FCH041N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Pulsed drain current: 231A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Pulsed drain current: 231A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH041N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH041N60F-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 277nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| N93C66BT3ETAG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT93C66VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAV93C66VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| CAV93C66YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| BC817-40WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.72 грн |
| 180+ | 2.05 грн |
| 500+ | 1.81 грн |
| 520+ | 1.59 грн |
| 1400+ | 1.5 грн |
| SBC817-40LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.58 грн |
| 120+ | 2.98 грн |
| SBC817-40LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| NTHL040N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NTH4L040N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
| SBC847BPDW1T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| MC74AC574DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
товар відсутній
| MC74AC574DWR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
товар відсутній
| 2SC5488A-TL-H |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.1W; SC81
Kind of package: reel; tape
Case: SC81
Frequency: 5...7GHz
Collector current: 70mA
Mounting: SMD
Collector-emitter voltage: 10V
Power dissipation: 0.1W
Polarisation: bipolar
Kind of transistor: RF
Application: automotive industry
Type of transistor: NPN
Current gain: 90...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.1W; SC81
Kind of package: reel; tape
Case: SC81
Frequency: 5...7GHz
Collector current: 70mA
Mounting: SMD
Collector-emitter voltage: 10V
Power dissipation: 0.1W
Polarisation: bipolar
Kind of transistor: RF
Application: automotive industry
Type of transistor: NPN
Current gain: 90...200
товар відсутній
| FDC6318P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 41.73 грн |
| 25+ | 33.9 грн |
| 29+ | 27.68 грн |
| 79+ | 26.29 грн |
| FDG6304P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.52 грн |
| 25+ | 19.51 грн |
| 62+ | 12.9 грн |
| 170+ | 12.19 грн |
| NCP2820FCT1G |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: flip chip9
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; 4Ω
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: flip chip9
товар відсутній
| NCP2820MUTBG |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: uDFN8
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.65W; 2.5÷5.5VDC; Amp.class: D; uDFN8
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Output power: 2.65W
Type of integrated circuit: audio amplifier
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Impedance: 4Ω
Amplifier class: D
Case: uDFN8
товар відсутній
| FR014H5JZ |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
Category: Transil diodes - arrays
Description: Diode: diode arrays; 30V; 0.8A; WDFN8; Features: ESD protection
Max. forward impulse current: 0.8A
Breakdown voltage: 30V
Kind of package: reel; tape
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Mounting: SMD
Case: WDFN8
товар відсутній
| NUP4114UCLW1T2G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 18.11 грн |
| 34+ | 10.38 грн |
| 100+ | 9.34 грн |
| 108+ | 7.47 грн |
| 295+ | 7.07 грн |
| MC74VHCT139ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| NC7SP157P6X |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Case: SC88
Manufacturer series: TinyLogic
Technology: CMOS
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: multiplexer
Family: NC
Mounting: SMD
Number of inputs: 3
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Case: SC88
Manufacturer series: TinyLogic
Technology: CMOS
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: multiplexer
Family: NC
Mounting: SMD
Number of inputs: 3
Type of integrated circuit: digital
на замовлення 1965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.85 грн |
| 18+ | 19.86 грн |
| 20+ | 17.71 грн |
| 25+ | 16.19 грн |
| 50+ | 13.63 грн |
| 100+ | 11.07 грн |
| 144+ | 5.6 грн |
| 394+ | 5.26 грн |
| NV24C08DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| NV24C08MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08TDI-GT3 |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C08YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAV24C08WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| CAV24C08YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| FDS6673BZ | |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC6675BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -32A
Mounting: SMD
Case: WDFN8
товар відсутній
| FDMS6673BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SS33 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
товар відсутній
| NCV8405ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; SOT223
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223
товар відсутній
| NCV8406ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
товар відсутній
| NCV8450ASTT3G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 3Ω
Kind of package: reel; tape
Supply voltage: 4.5...45V DC
товар відсутній
| NCV8452STT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5mA
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
товар відсутній
| NCV8460ADR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
товар відсутній
| NCV8461DR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.7Ω
Kind of package: reel; tape
Supply voltage: 5...34V DC
товар відсутній
| MC74HC11ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
товар відсутній