| Фото | Назва | Виробник | Інформація |
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MJE172G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225 Polarisation: bipolar Kind of package: bulk Case: TO225 Mounting: THT Power dissipation: 15W Frequency: 50MHz Collector-emitter voltage: 100V Collector current: 3A Type of transistor: PNP |
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H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM Mounting: THT Case: DIP6 Manufacturer series: H11FXM Insulation voltage: 7kV Number of channels: 1 Turn-off time: 25µs Turn-on time: 25µs Type of optocoupler: optocoupler Kind of output: transistor |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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AMIS41682CANM1RG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape Supply voltage: 5V DC Case: SO14 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: transceiver Operating temperature: -40...125°C Type of integrated circuit: digital |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 1155 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC245DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 36W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 50MHz |
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MC74HC4040ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SOIC16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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| MC74HC4040ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C |
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| NLAS7222AMTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA Type of integrated circuit: analog switch Number of channels: 1 Case: WQFN10 Supply voltage: 3...3.6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA Technology: CMOS |
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| FSA2275AUMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 2.5...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FSA2276UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape Operating temperature: -40...85°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Type of integrated circuit: analog switch Number of channels: 2 |
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| FDB8441 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK Case: D2PAK Mounting: SMD On-state resistance: 2.5mΩ Kind of package: reel; tape Technology: UniFET™ Power dissipation: 300W Gate charge: 280nC Polarisation: unipolar Drain current: 28A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
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| FDB8447L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK Case: D2PAK Mounting: SMD On-state resistance: 12.4mΩ Kind of package: reel; tape Power dissipation: 60W Polarisation: unipolar Drain current: 50A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
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| NTD18N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 55W Case: DPAK Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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MC14503BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape |
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MC74HCT365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
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| MC74HCT365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
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| NRVB540MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. load current: 10A Max. forward voltage: 0.58V Load current: 5A |
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| NRVB540MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Max. load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
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FDT86106LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.2W On-state resistance: 189mΩ Polarisation: unipolar Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.2A Type of transistor: N-MOSFET |
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FDT86113LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 189mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NCV8402ADDR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8 Type of integrated circuit: power switch Case: SO8 Mounting: SMD Supply voltage: 42V DC Number of channels: 2 Kind of integrated circuit: low-side On-state resistance: 0.46Ω Output current: 5.4A Kind of output: N-Channel Kind of package: reel; tape |
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NCV8402ASTT3G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape Kind of package: reel; tape Case: SO8 Supply voltage: 42V DC On-state resistance: 0.46Ω Output current: 2A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel Kind of integrated circuit: low-side Mounting: SMD |
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BAS31 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Case: SOT23 Max. off-state voltage: 120V Capacitance: 35pF Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 50ns Max. forward impulse current: 2A |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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BZX79C11 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C15 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2234 шт: термін постачання 21-30 дні (днів) |
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BZX79C2V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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BZX79C3V3 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3920 шт: термін постачання 21-30 дні (днів) |
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BZX79C3V9 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C4V3 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C6V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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BZX79C6V8 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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BZX79C8V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2020 шт: термін постачання 21-30 дні (днів) |
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BZX79C9V1 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: DO35 Semiconductor structure: single diode |
на замовлення 2180 шт: термін постачання 21-30 дні (днів) |
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MC7805BD2TG | ONSEMI |
 Category: Unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
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MC7805BD2TR4G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 8...20V Manufacturer series: MC7800 |
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| FCH067N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247 Case: TO247 Mounting: THT Kind of package: tube Power dissipation: 312W Polarisation: unipolar Gate charge: 78nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 110A Drain-source voltage: 650V Drain current: 28A On-state resistance: 59mΩ Type of transistor: N-MOSFET |
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| NRVUS110VT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.25V Case: SMB Semiconductor structure: single diode Application: automotive industry Reverse recovery time: 75ns Max. forward impulse current: 40A Load current: 1A Max. off-state voltage: 100V |
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| FDMA420NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6 Mounting: SMD Case: WDFN6 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A |
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MC14022BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: counter Case: SO16 Mounting: SMD Number of channels: 8 Technology: CMOS |
на замовлення 2278 шт: термін постачання 21-30 дні (днів) |
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MJE181G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225 Power dissipation: 15W Case: TO225 Mounting: THT Kind of package: bulk Collector current: 3A Collector-emitter voltage: 60V Polarisation: bipolar Type of transistor: NPN Current gain: 12...250 Frequency: 50MHz |
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| FAN73895MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of package: reel; tape Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V Mounting: SMD Operating temperature: -40...125°C Case: SO28-W Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 6 |
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NTK3139PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Kind of package: reel; tape Mounting: SMD Power dissipation: 0.45W Polarisation: unipolar Drain current: -0.57A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Case: SOT723 On-state resistance: 2.2Ω Gate-source voltage: ±6V |
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MJE15034G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 4A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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| NCV7321D12R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape Type of integrated circuit: interface Interface: LIN Supply voltage: 5...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Case: SOIC8 Application: automotive industry Kind of integrated circuit: transceiver |
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BC858ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 4040 шт: термін постачання 21-30 дні (днів) |
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| BC858CDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 270...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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BC858CLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 3735 шт: термін постачання 21-30 дні (днів) |
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BC858CLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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BAV70LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape |
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BAV70M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 640mW |
на замовлення 7980 шт: термін постачання 21-30 дні (днів) |
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LB1930MC-AH | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; bidirectional,brush motor controller; SO10; 1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: bidirectional; brush motor controller Case: SO10 Output current: 1A Number of channels: 2 Mounting: SMD Operating temperature: -30...85°C Operating voltage: 2.2...10.8V |
товар відсутній |
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MBRS3200T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Case: SMB Kind of package: reel; tape |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Case: SMC Kind of package: reel; tape |
товар відсутній |
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| MBRS320T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 80A |
товар відсутній |
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BC807-40WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 460W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 460W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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SBC807-40LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товар відсутній |
| MJE172G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Mounting: THT
Power dissipation: 15W
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 3A
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Mounting: THT
Power dissipation: 15W
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 3A
Type of transistor: PNP
товар відсутній
| H11F1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 342.77 грн |
| 3+ | 294.76 грн |
| 4+ | 229.72 грн |
| 10+ | 217.27 грн |
| NTMFS5C670NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.43 грн |
| 5+ | 97.56 грн |
| 11+ | 73.35 грн |
| 30+ | 69.19 грн |
| AMIS41682CANM1RG |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Supply voltage: 5V DC
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
Type of integrated circuit: digital
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Supply voltage: 5V DC
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Operating temperature: -40...125°C
Type of integrated circuit: digital
товар відсутній
| 1N4149TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 1155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 6.71 грн |
| 59+ | 5.88 грн |
| 106+ | 3.29 грн |
| 176+ | 1.97 грн |
| 250+ | 1.65 грн |
| 500+ | 1.38 грн |
| 838+ | 0.95 грн |
| MC74VHC245DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| MJF44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 50MHz
товар відсутній
| MC74HC4040ADR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| MC74HC4040ADTR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товар відсутній
| NLAS7222AMTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: WQFN10
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WQFN10; 3÷3.6VDC; reel,tape; OUT: DPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: WQFN10
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Technology: CMOS
товар відсутній
| FSA2275AUMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FSA2275UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.5...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FSA2276UMX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Type of integrated circuit: analog switch
Number of channels: 2
товар відсутній
| FDB8441 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 2.5mΩ
Kind of package: reel; tape
Technology: UniFET™
Power dissipation: 300W
Gate charge: 280nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 2.5mΩ
Kind of package: reel; tape
Technology: UniFET™
Power dissipation: 300W
Gate charge: 280nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
| FDB8447L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 12.4mΩ
Kind of package: reel; tape
Power dissipation: 60W
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Case: D2PAK
Mounting: SMD
On-state resistance: 12.4mΩ
Kind of package: reel; tape
Power dissipation: 60W
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
| NTD18N06LT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC14503BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.89 грн |
| 10+ | 47.12 грн |
| 23+ | 35.42 грн |
| 63+ | 33.49 грн |
| MC14503BDR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
товар відсутній
| MC74HCT365ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
товар відсутній
| MC74HCT365ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
товар відсутній
| NRVB540MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 10A
Max. forward voltage: 0.58V
Load current: 5A
товар відсутній
| NRVB540MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
товар відсутній
| FDT86106LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; 2.2W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.2W
On-state resistance: 189mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
товар відсутній
| FDT86113LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCV8402ADDR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Case: SO8
Mounting: SMD
Supply voltage: 42V DC
Number of channels: 2
Kind of integrated circuit: low-side
On-state resistance: 0.46Ω
Output current: 5.4A
Kind of output: N-Channel
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Case: SO8
Mounting: SMD
Supply voltage: 42V DC
Number of channels: 2
Kind of integrated circuit: low-side
On-state resistance: 0.46Ω
Output current: 5.4A
Kind of output: N-Channel
Kind of package: reel; tape
товар відсутній
| NCV8402ASTT3G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Kind of package: reel; tape
Case: SO8
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Kind of package: reel; tape
Case: SO8
Supply voltage: 42V DC
On-state resistance: 0.46Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: low-side
Mounting: SMD
товар відсутній
| BAS31 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 120V
Capacitance: 35pF
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 120V
Capacitance: 35pF
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
на замовлення 890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 67+ | 5.57 грн |
| 100+ | 4.66 грн |
| 219+ | 3.66 грн |
| 600+ | 3.46 грн |
| BZX79C11 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C15 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.54 грн |
| 210+ | 1.71 грн |
| 260+ | 1.38 грн |
| 680+ | 1.19 грн |
| 1850+ | 1.13 грн |
| BZX79C2V7 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.47 грн |
| 150+ | 2.46 грн |
| 250+ | 1.98 грн |
| 470+ | 1.72 грн |
| 1290+ | 1.62 грн |
| BZX79C3V3 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.29 грн |
| 120+ | 2.93 грн |
| 380+ | 2.2 грн |
| 1000+ | 2.08 грн |
| BZX79C3V9 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C4V3 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C6V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.07 грн |
| 130+ | 2.77 грн |
| 250+ | 2.23 грн |
| 420+ | 1.93 грн |
| 1140+ | 1.83 грн |
| BZX79C6V8 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX79C8V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.43 грн |
| 130+ | 2.85 грн |
| 250+ | 2.28 грн |
| 400+ | 2.02 грн |
| 1090+ | 1.91 грн |
| BZX79C9V1 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO35
Semiconductor structure: single diode
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.69 грн |
| 140+ | 2.59 грн |
| 250+ | 2.08 грн |
| 450+ | 1.81 грн |
| 1220+ | 1.71 грн |
| MC7805BD2TG | |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
товар відсутній
| MC7805BD2TR4G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
товар відсутній
| FCH067N65S3-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 312W
Polarisation: unipolar
Gate charge: 78nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 110A
Drain-source voltage: 650V
Drain current: 28A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 312W
Polarisation: unipolar
Gate charge: 78nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 110A
Drain-source voltage: 650V
Drain current: 28A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
товар відсутній
| NRVUS110VT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.25V
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
Reverse recovery time: 75ns
Max. forward impulse current: 40A
Load current: 1A
Max. off-state voltage: 100V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.25V
Case: SMB
Semiconductor structure: single diode
Application: automotive industry
Reverse recovery time: 75ns
Max. forward impulse current: 40A
Load current: 1A
Max. off-state voltage: 100V
товар відсутній
| FDMA420NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
товар відсутній
| MC14022BDG | |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: counter
Case: SO16
Mounting: SMD
Number of channels: 8
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; counter; Ch: 8; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: counter
Case: SO16
Mounting: SMD
Number of channels: 8
Technology: CMOS
на замовлення 2278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.2 грн |
| 10+ | 38.75 грн |
| 27+ | 30.24 грн |
| 73+ | 28.58 грн |
| 240+ | 27.54 грн |
| MJE181G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Collector current: 3A
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 12...250
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 15W; TO225
Power dissipation: 15W
Case: TO225
Mounting: THT
Kind of package: bulk
Collector current: 3A
Collector-emitter voltage: 60V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 12...250
Frequency: 50MHz
товар відсутній
| FAN73895MX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
товар відсутній
| NTK3139PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.45W
Polarisation: unipolar
Drain current: -0.57A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Case: SOT723
On-state resistance: 2.2Ω
Gate-source voltage: ±6V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.45W
Polarisation: unipolar
Drain current: -0.57A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Case: SOT723
On-state resistance: 2.2Ω
Gate-source voltage: ±6V
товар відсутній
| MJE15034G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.19 грн |
| 10+ | 60.2 грн |
| 16+ | 52.59 грн |
| 43+ | 49.13 грн |
| NCV7321D12R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOIC8
Application: automotive industry
Kind of integrated circuit: transceiver
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; LIN; SMD; SOIC8; reel,tape
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOIC8
Application: automotive industry
Kind of integrated circuit: transceiver
товар відсутній
| BC858ALT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 4040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.5 грн |
| 280+ | 1.28 грн |
| 500+ | 1.15 грн |
| 900+ | 0.89 грн |
| 2480+ | 0.84 грн |
| BC858CDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| BC858CLT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 3735 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.57 грн |
| 240+ | 1.52 грн |
| 500+ | 1.37 грн |
| 700+ | 1.17 грн |
| 1880+ | 1.1 грн |
| BC858CLT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| BAV70LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
товар відсутній
| BAV70M3T5G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 640mW
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 640mW
на замовлення 7980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.29 грн |
| 110+ | 3.45 грн |
| 250+ | 3.04 грн |
| 310+ | 2.65 грн |
| 840+ | 2.5 грн |
| LB1930MC-AH |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; bidirectional,brush motor controller; SO10; 1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: bidirectional; brush motor controller
Case: SO10
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Operating voltage: 2.2...10.8V
Category: Motor and PWM drivers
Description: IC: driver; bidirectional,brush motor controller; SO10; 1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: bidirectional; brush motor controller
Case: SO10
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Operating voltage: 2.2...10.8V
товар відсутній
| MBRS3200T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMB
Kind of package: reel; tape
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| MBRS3201T3G | |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMC
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMC
Kind of package: reel; tape
товар відсутній
| MBRS320T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 80A
товар відсутній
| BC807-40WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 460W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 460W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 460W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 460W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.83 грн |
| 160+ | 2.36 грн |
| 460+ | 1.82 грн |
| 1220+ | 1.72 грн |
| SBC807-40LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній