Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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LM285Z-2.5RPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; Ammo Pack; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: Ammo Pack Maximum output current: 20mA |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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FQP2N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 1.52A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 6.3Ω Pulsed drain current: 9.6A Power dissipation: 85W Gate charge: 15nC Polarisation: unipolar |
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FQP8P10 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
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2N3819 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 25V; 20mA; 360mW; TO92 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power: 0.36W Case: TO92 Mounting: THT |
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RURG8060 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 80A; tube; Ifsm: 800A; TO247-2; 180W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 80A Max. load current: 160A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 800A Case: TO247-2 Max. forward voltage: 1.6V Power dissipation: 180W Reverse recovery time: 85ns |
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MMBF4392 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
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MMBTA13 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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DF02S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 678 шт: термін постачання 21-30 дні (днів) |
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NC7SP19P6X | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 2; CMOS; SMD; SC88 Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Manufacturer series: TinyLogic Technology: CMOS Kind of integrated circuit: decoder; demultiplexer Family: NC Mounting: SMD Case: SC88 Number of inputs: 2 Supply voltage: 0.9...3.6V DC |
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MB4S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 3552 шт: термін постачання 21-30 дні (днів) |
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NCP45760IMN24RTWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN12 Kind of package: reel; tape Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 3...24V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN12 Supply voltage: 3...5.5V DC On-state resistance: 23mΩ Output current: 8A Type of integrated circuit: power switch |
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MMBFJ177 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 0.225W; SOT23; 50mA Type of transistor: P-JFET Polarisation: unipolar Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
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NCP603SN330T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.23V Output voltage: 3.3V Output current: 0.3A Case: TSOP5 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.75...6V Manufacturer series: NCP603 |
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MMBTA56 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
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FSAV430QSCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; QSOP16; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: QSOP16 Supply voltage: 3...3.6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT x4 Quiescent current: 1µA Technology: TTL |
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H11AV1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: THT Collector-emitter voltage: 70V CTR@If: 100-300%@10mA Kind of output: transistor Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 15µs Case: DIP6 Turn-off time: 15µs Number of channels: 1 |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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FDS86242 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4.1A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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MC74VHC1G05DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: SC88A Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: open drain Quiescent current: 40µA Technology: CMOS Family: VHC Number of inputs: 1 Kind of gate: NOT |
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MC74VHC1G05DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: open drain Family: VHC |
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NLSV2T240MUTAG | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,inverting,translator; Ch: 2; 900mVDC÷4.5VDC; SMD Case: uDFN8 Operating temperature: -40...85°C Supply voltage: 0.9...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: 2bit; inverting; translator Number of channels: 2 Type of integrated circuit: digital |
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MMBT6520LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.225/0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 15...200 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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MBR3045PT | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30A; TO247; tube; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A Semiconductor structure: common cathode; double Case: TO247 Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.76V |
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FMB3946 | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: SuperSOT-6 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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NCP81292MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 On-state resistance: 0.65mΩ Kind of package: reel; tape Supply voltage: 4.5...18V DC Operating temperature: -40...125°C |
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NCP81295MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Mounting: SMD Case: QFN32 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Output current: 50A Type of integrated circuit: eFuse |
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NCP81296MNTXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 On-state resistance: 0.65mΩ Kind of package: reel; tape Supply voltage: 4.5...18V DC Operating temperature: -40...125°C |
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MMBD6050LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Leakage current: 0.1mA Power dissipation: 0.4W |
на замовлення 2925 шт: термін постачання 21-30 дні (днів) |
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MC78L05ACP | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
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LM358ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: 0...70°C Input offset voltage: 5mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input offset current: 75nA |
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MOC3021M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6 Mounting: THT Manufacturer series: MOC302XM Insulation voltage: 5.3kV Case: DIP6 Type of optocoupler: optotriac Kind of output: without zero voltage crossing driver |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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MC74ACT132DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
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MC74ACT132DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: ACT |
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MC74LVX132DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB Mounting: SMD Operating temperature: -40...125°C Case: SO14NB Number of inputs: 2 Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: LVX Kind of gate: NAND Technology: CMOS Kind of integrated circuit: Schmitt trigger Family: LVX |
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MC74LVX132DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14 Mounting: SMD Operating temperature: -40...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Kind of package: tube Kind of input: with Schmitt trigger Manufacturer series: LVX Kind of gate: NAND Technology: CMOS Kind of integrated circuit: Schmitt trigger |
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M74VHC1G132DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Case: SC70-5 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: single; 1 Delay time: 3.6ns Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: VHC |
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M74VHC1G132DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Case: SC70-5 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: single; 1 Delay time: 3.6ns Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: VHC |
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NLVVHC1G132DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Case: SC88A Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: single; 1 Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND |
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NLVVHC1G132DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Case: TSSOP5 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: single; 1 Quiescent current: 40µA Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS |
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FDN8601 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 2.7A On-state resistance: 183mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-3 |
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FDD4685 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Kind of package: reel; tape Drain-source voltage: -40V Drain current: -32A On-state resistance: 42mΩ Type of transistor: P-MOSFET Power dissipation: 69W Polarisation: unipolar Gate charge: 27nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK |
на замовлення 2265 шт: термін постачання 21-30 дні (днів) |
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FQP30N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21.3A; Idm: 120A; 79W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21.3A Pulsed drain current: 120A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 40mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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MC74HC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
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MM3Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
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SZMM3Z5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
на замовлення 1588 шт: термін постачання 21-30 дні (днів) |
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MM3Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 5671 шт: термін постачання 21-30 дні (днів) |
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2N3771G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 30A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 30A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
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KSD882YSTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 3A Power dissipation: 1W Case: TO126ISO Current gain: 160...320 Mounting: THT Kind of package: tube Frequency: 90MHz |
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MMBTA64 | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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74LCXR162245MTD | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 16 Mounting: SMD Case: TSSOP48 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 20µA |
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74LCXR162245MTX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 16 Mounting: SMD Case: TSSOP48 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
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N25S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 256kb SRAM Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Kind of interface: serial |
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N25S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 256kb SRAM Case: TSSOP8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Kind of interface: serial |
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N64S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 64kb SRAM Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 8kx8bit Kind of interface: serial |
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N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 64kb SRAM Case: TSSOP8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 8kx8bit Kind of interface: serial |
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BC369ZL1G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 25V; 1A; 800mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1A Power: 0.8W Case: TO92 Mounting: THT Frequency: 65MHz |
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TIP110 | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube |
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MC10ELT20DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10ELT |
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MC10ELT21DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
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MC10ELT24DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10ELT |
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MC10ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
товар відсутній |
LM285Z-2.5RPG |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: Ammo Pack
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: Ammo Pack
Maximum output current: 20mA
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 59.72 грн |
10+ | 35.78 грн |
25+ | 33.78 грн |
30+ | 26.83 грн |
FQP2N80 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 1.52A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate charge: 15nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 1.52A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate charge: 15nC
Polarisation: unipolar
товар відсутній
FQP8P10 |
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -5.7A
Pulsed drain current: -32A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
2N3819 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 360mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power: 0.36W
Case: TO92
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 360mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power: 0.36W
Case: TO92
Mounting: THT
товар відсутній
RURG8060 |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 80A; tube; Ifsm: 800A; TO247-2; 180W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 80A
Max. load current: 160A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 800A
Case: TO247-2
Max. forward voltage: 1.6V
Power dissipation: 180W
Reverse recovery time: 85ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 80A; tube; Ifsm: 800A; TO247-2; 180W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 80A
Max. load current: 160A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 800A
Case: TO247-2
Max. forward voltage: 1.6V
Power dissipation: 180W
Reverse recovery time: 85ns
товар відсутній
MMBF4392 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
товар відсутній
MMBTA13 |
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
DF02S |
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 678 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 29.56 грн |
25+ | 24.7 грн |
44+ | 18.38 грн |
120+ | 17.38 грн |
NC7SP19P6X |
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 2; CMOS; SMD; SC88
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: TinyLogic
Technology: CMOS
Kind of integrated circuit: decoder; demultiplexer
Family: NC
Mounting: SMD
Case: SC88
Number of inputs: 2
Supply voltage: 0.9...3.6V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 2; CMOS; SMD; SC88
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: TinyLogic
Technology: CMOS
Kind of integrated circuit: decoder; demultiplexer
Family: NC
Mounting: SMD
Case: SC88
Number of inputs: 2
Supply voltage: 0.9...3.6V DC
товар відсутній
MB4S |
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 3552 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 22.67 грн |
25+ | 14.59 грн |
78+ | 10.24 грн |
214+ | 9.68 грн |
NCP45760IMN24RTWG |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 3...24V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 23mΩ
Output current: 8A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN12
Kind of package: reel; tape
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 3...24V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN12
Supply voltage: 3...5.5V DC
On-state resistance: 23mΩ
Output current: 8A
Type of integrated circuit: power switch
товар відсутній
MMBFJ177 |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 0.225W; SOT23; 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 0.225W; SOT23; 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
товар відсутній
NCP603SN330T1G |
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.75...6V
Manufacturer series: NCP603
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.23V
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.75...6V
Manufacturer series: NCP603
товар відсутній
MMBTA56 |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товар відсутній
FSAV430QSCX |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; QSOP16; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: QSOP16
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 1µA
Technology: TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; QSOP16; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: QSOP16
Supply voltage: 3...3.6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT x4
Quiescent current: 1µA
Technology: TTL
товар відсутній
H11AV1M |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
на замовлення 845 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 70.32 грн |
10+ | 36.81 грн |
25+ | 32.68 грн |
29+ | 28.32 грн |
78+ | 26.78 грн |
500+ | 25.73 грн |
FDS86242 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.1A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.1A; 5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4.1A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
MC74VHC1G05DFT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Quiescent current: 40µA
Technology: CMOS
Family: VHC
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Quiescent current: 40µA
Technology: CMOS
Family: VHC
Number of inputs: 1
Kind of gate: NOT
товар відсутній
MC74VHC1G05DTT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
товар відсутній
NLSV2T240MUTAG |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,inverting,translator; Ch: 2; 900mVDC÷4.5VDC; SMD
Case: uDFN8
Operating temperature: -40...85°C
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 2bit; inverting; translator
Number of channels: 2
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; 2bit,inverting,translator; Ch: 2; 900mVDC÷4.5VDC; SMD
Case: uDFN8
Operating temperature: -40...85°C
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 2bit; inverting; translator
Number of channels: 2
Type of integrated circuit: digital
товар відсутній
MMBT6520LT1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 15...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 15...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
MBR3045PT |
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; TO247; tube; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.76V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; TO247; tube; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.76V
товар відсутній
FMB3946 |
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товар відсутній
NCP81292MNTXG |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
товар відсутній
NCP81295MNTXG |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Output current: 50A
Type of integrated circuit: eFuse
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Output current: 50A
Type of integrated circuit: eFuse
товар відсутній
NCP81296MNTXG |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Supply voltage: 4.5...18V DC
Operating temperature: -40...125°C
товар відсутній
MMBD6050LT1G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
на замовлення 2925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 2.19 грн |
225+ | 1.54 грн |
500+ | 1.37 грн |
675+ | 1.22 грн |
1800+ | 1.16 грн |
MC78L05ACP |
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
товар відсутній
LM358ADR2G |
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 75nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 75nA
товар відсутній
MOC3021M |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Mounting: THT
Manufacturer series: MOC302XM
Insulation voltage: 5.3kV
Case: DIP6
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Mounting: THT
Manufacturer series: MOC302XM
Insulation voltage: 5.3kV
Case: DIP6
Type of optocoupler: optotriac
Kind of output: without zero voltage crossing driver
на замовлення 485 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 39.64 грн |
16+ | 22.98 грн |
50+ | 15.96 грн |
138+ | 15.14 грн |
MC74ACT132DG |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
товар відсутній
MC74ACT132DR2G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
товар відсутній
MC74LVX132DR2G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14NB
Number of inputs: 2
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: LVX
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14NB
Number of inputs: 2
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: LVX
товар відсутній
MC74LVX132DTG |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Mounting: SMD
Operating temperature: -40...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of package: tube
Kind of input: with Schmitt trigger
Manufacturer series: LVX
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
товар відсутній
M74VHC1G132DFT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC70-5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Delay time: 3.6ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC70-5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Delay time: 3.6ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
товар відсутній
M74VHC1G132DFT2G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC70-5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Delay time: 3.6ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC70-5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Delay time: 3.6ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
товар відсутній
NLVVHC1G132DFT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
товар відсутній
NLVVHC1G132DTT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP5
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
товар відсутній
FDN8601 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
товар відсутній
FDD4685 |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -32A
On-state resistance: 42mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -32A
On-state resistance: 42mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
на замовлення 2265 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.48 грн |
6+ | 66.74 грн |
16+ | 51 грн |
43+ | 48.22 грн |
FQP30N06 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21.3A; Idm: 120A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21.3A; Idm: 120A; 79W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
MC74HC1GU04DTT1G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товар відсутній
MM3Z5V1T1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
SZMM3Z5V1T1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1588 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
58+ | 6.42 грн |
93+ | 3.71 грн |
250+ | 3.28 грн |
278+ | 2.85 грн |
765+ | 2.69 грн |
MM3Z4V7T1G |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 5671 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
157+ | 2.37 грн |
211+ | 1.63 грн |
500+ | 1.31 грн |
700+ | 1.14 грн |
1924+ | 1.07 грн |
2N3771G |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 30A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 30A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 30A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 30A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
товар відсутній
KSD882YSTU |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
товар відсутній
MMBTA64 |
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
товар відсутній
74LCXR162245MTD |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 20µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 20µA
товар відсутній
74LCXR162245MTX |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Mounting: SMD
Case: TSSOP48
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
N25S830HAS22I |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
товар відсутній
N25S830HAT22I |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
товар відсутній
N64S830HAS22I |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
товар відсутній
N64S830HAT22I |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
товар відсутній
BC369ZL1G |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Power: 0.8W
Case: TO92
Mounting: THT
Frequency: 65MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Power: 0.8W
Case: TO92
Mounting: THT
Frequency: 65MHz
товар відсутній
TIP110 |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
MC10ELT20DG |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
товар відсутній
MC10ELT21DG |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
товар відсутній
MC10ELT24DG |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
товар відсутній
MC10ELT25DG |
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
товар відсутній