| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDT1600N10ALZ | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 10.42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 100V Drain current: 3.5A |
на замовлення 3890 шт: термін постачання 21-30 дні (днів) |
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FMBA14 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W Mounting: SMD Collector-emitter voltage: 30V Collector current: 1.2A Type of transistor: NPN x2 Power dissipation: 0.7W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: Darlington Case: SuperSOT-6 Frequency: 1.25MHz |
на замовлення 1657 шт: термін постачання 21-30 дні (днів) |
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| FST3126DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; SOIC14; 4÷5.5VDC Technology: CMOS; TTL Mounting: SMD Case: SOIC14 Kind of package: reel; tape Operating temperature: -55...125°C Kind of integrated circuit: 4bit; bus switch Supply voltage: 4...5.5V DC Type of integrated circuit: digital Number of channels: 4 |
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| NRVB860MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 8A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.8V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
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| NRVTS560EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 5A Max. load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.61V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
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| NRVTS1545EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A Max. load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 210A Application: automotive industry |
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| 74VHCT240AMTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: VHCT |
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LM78L05ACZ | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 |
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| MM3Z12VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 90nA Max. forward voltage: 1V |
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| MM3Z12VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 90nA Max. forward voltage: 1V |
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MM3Z12VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
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MM3Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 16743 шт: термін постачання 21-30 дні (днів) |
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SBE807-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; 10ns; SOT25; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Reverse recovery time: 10ns Semiconductor structure: double independent Capacitance: 27pF Max. forward voltage: 0.53V Case: SOT25 Kind of package: reel; tape Leakage current: 15µA Max. forward impulse current: 10A |
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MC74LCX125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs |
на замовлення 111 шт: термін постачання 21-30 дні (днів) |
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MC74LCX125DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; LCX Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
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MC74LCX125DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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MC74LCX125DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
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MC74LVX125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer; Ch: 4; IN: 2; CMOS; SMD; SO14NB; LVX; 2÷3.6VDC Number of channels: 4 Operating temperature: -40...85°C Manufacturer series: LVX Supply voltage: 2...3.6V DC Kind of package: tube Integrated circuit features: tolerates a voltage of 5V on the inputs Type of integrated circuit: digital Number of inputs: 2 Technology: CMOS Kind of integrated circuit: bus buffer Family: LVX Case: SO14NB Mounting: SMD |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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MC74LVX125DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVX Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: LVX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| FXL4TD245UMX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Mounting: SMD Case: UMLP16 Supply voltage: 1.1...3.6V DC Operating temperature: -40...85°C Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Kind of package: reel; tape |
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| NV25640DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; TSSOP8 Operating temperature: -40...150°C Kind of interface: serial Memory: 1kb EEPROM Mounting: SMD Case: TSSOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape |
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| NV25640DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Operating temperature: -40...150°C Kind of interface: serial Memory: 2kb EEPROM Mounting: SMD Case: SOIC8 Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape |
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| FDMS86105 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56 Mounting: SMD Case: Power56 Polarisation: unipolar Drain current: 26A Drain-source voltage: 100V Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Power dissipation: 48W Type of transistor: N-MOSFET On-state resistance: 57mΩ Kind of package: reel; tape |
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| NLU1GT126AMUTCG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; uDFN6; 40uA Type of integrated circuit: digital Case: uDFN6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Quiescent current: 40µA Kind of output: 3-state |
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| NLU1GT126MUTCG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA Type of integrated circuit: digital Case: uDFN6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Quiescent current: 40µA Kind of output: 3-state |
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SD05T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 5V Breakdown voltage: 6.2V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Features of semiconductor devices: ESD protection |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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HCPL2531 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; CTR@If: 19-50%@16mA; 1Mbps Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Turn-on time: 1.5µs Turn-off time: 1.5µs Slew rate: 2.5kV/μs |
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| MMBFJ310 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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FDS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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FDS2672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.9A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 148mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS2734 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 45nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 250V Drain current: 3A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Power dissipation: 2.5W |
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FDS3572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 5.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS3692 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.8A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS3992 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 123mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS4470 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 733 шт: термін постачання 21-30 дні (днів) |
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FDS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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FQD6N50CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Pulsed drain current: 18A Power dissipation: 61W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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LM358AN | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.6V/μs Operating temperature: 0...70°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
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MUR880EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.8V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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1N4744A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 15V; bulk; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2222 шт: термін постачання 21-30 дні (днів) |
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FDG6303N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W Type of transistor: N-MOSFET x2 Technology: DMOS Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.5A Pulsed drain current: 1.3A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 On-state resistance: 770mΩ Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 1725 шт: термін постачання 21-30 дні (днів) |
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| FDG6317NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; 20V; 0.7A; 0.3W Kind of package: reel; tape Mounting: SMD Case: SC70-6; SC88; SOT363 Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.56Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V |
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FDS8935 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -80V Drain current: -2.1A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 308mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTGD3148NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NVJD4401NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.375Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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BD180G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 3A; 30W; TO126 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power: 30W Case: TO126 Mounting: THT Frequency: 3MHz |
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ES3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Power dissipation: 1.66W Kind of package: reel; tape |
на замовлення 4998 шт: термін постачання 21-30 дні (днів) |
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| FDMS86500L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 799A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced |
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| NCP136AFCRC040T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.4V; 700mA; WLCSP6; SMD Operating temperature: -40...85°C Number of channels: 1 Manufacturer series: NCP136 Type of integrated circuit: voltage regulator Voltage drop: 60mV Output current: 0.7A Output voltage: 0.4V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Case: WLCSP6 Mounting: SMD Input voltage: 0.4...5.5V |
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| NCP136AFCT105T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD Operating temperature: -40...85°C Number of channels: 1 Manufacturer series: NCP136 Type of integrated circuit: voltage regulator Voltage drop: 60mV Output current: 0.7A Output voltage: 1.05V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±1% Case: WLCSP6 Mounting: SMD Input voltage: 1.05...5.5V |
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NVR4003NT3G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.37A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Kind of package: reel; tape |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Gate charge: 6nC Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Kind of package: reel; tape |
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MM74HCT240MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA |
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MM74HCT240WM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 2; TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 2 Technology: TTL Mounting: SMD Case: SO20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 160µA |
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NC7WZ07P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Case: SC70-6 Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Quiescent current: 10µA Kind of output: open drain |
на замовлення 8595 шт: термін постачання 21-30 дні (днів) |
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FAN3278TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -1.5...1A Number of channels: 2 Supply voltage: 8...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting |
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| WMBUS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; M-Bus; prototype board Type of accessories for development kits: expansion board Interface: M-Bus Kit contents: prototype board |
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HCPL3700 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Transfer rate: 4kbps Case: DIP8 Slew rate: 3kV/μs |
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MMBZ12VALT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; ±5% Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Case: SOT23 Tolerance: ±5% Max. off-state voltage: 8.5V Semiconductor structure: common anode; double Max. forward impulse current: 2.35A Breakdown voltage: 12V Leakage current: 0.2µA |
товар відсутній |
| FDT1600N10ALZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
на замовлення 3890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.14 грн |
| 12+ | 30.6 грн |
| 25+ | 27.05 грн |
| 34+ | 23.87 грн |
| 93+ | 22.57 грн |
| FMBA14 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Mounting: SMD
Collector-emitter voltage: 30V
Collector current: 1.2A
Type of transistor: NPN x2
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SuperSOT-6
Frequency: 1.25MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Mounting: SMD
Collector-emitter voltage: 30V
Collector current: 1.2A
Type of transistor: NPN x2
Power dissipation: 0.7W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: Darlington
Case: SuperSOT-6
Frequency: 1.25MHz
на замовлення 1657 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 8.39 грн |
| 65+ | 5.42 грн |
| 100+ | 4.87 грн |
| 444+ | 4.73 грн |
| 500+ | 4.52 грн |
| FST3126DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; SOIC14; 4÷5.5VDC
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: 4bit; bus switch
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; SOIC14; 4÷5.5VDC
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: 4bit; bus switch
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
товар відсутній
| NRVB860MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
товар відсутній
| NRVTS560EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
товар відсутній
| NRVTS1545EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 210A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 210A
Application: automotive industry
товар відсутній
| 74VHCT240AMTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHCT
товар відсутній
| LM78L05ACZ |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; bulk; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
товар відсутній
| MM3Z12VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 90nA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 90nA
Max. forward voltage: 1V
товар відсутній
| MM3Z12VC |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 90nA
Max. forward voltage: 1V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 90nA
Max. forward voltage: 1V
товар відсутній
| MM3Z12VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
товар відсутній
| MM3Z12VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 16743 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.49 грн |
| 75+ | 4.66 грн |
| 97+ | 3.62 грн |
| 132+ | 2.64 грн |
| 250+ | 2.41 грн |
| 500+ | 1.8 грн |
| 587+ | 1.38 грн |
| 1613+ | 1.31 грн |
| SBE807-TL-W |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; 10ns; SOT25; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Reverse recovery time: 10ns
Semiconductor structure: double independent
Capacitance: 27pF
Max. forward voltage: 0.53V
Case: SOT25
Kind of package: reel; tape
Leakage current: 15µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; 10ns; SOT25; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Reverse recovery time: 10ns
Semiconductor structure: double independent
Capacitance: 27pF
Max. forward voltage: 0.53V
Case: SOT25
Kind of package: reel; tape
Leakage current: 15µA
Max. forward impulse current: 10A
товар відсутній
| MC74LCX125DG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
на замовлення 111 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.43 грн |
| 10+ | 37.07 грн |
| 13+ | 27.75 грн |
| 25+ | 26.15 грн |
| 38+ | 21.77 грн |
| 102+ | 20.58 грн |
| MC74LCX125DR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; LCX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
товар відсутній
| MC74LCX125DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.4 грн |
| 11+ | 32.06 грн |
| 25+ | 28.1 грн |
| 32+ | 25.59 грн |
| 87+ | 24.2 грн |
| MC74LCX125DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
товар відсутній
| MC74LVX125DG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 4; IN: 2; CMOS; SMD; SO14NB; LVX; 2÷3.6VDC
Number of channels: 4
Operating temperature: -40...85°C
Manufacturer series: LVX
Supply voltage: 2...3.6V DC
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Number of inputs: 2
Technology: CMOS
Kind of integrated circuit: bus buffer
Family: LVX
Case: SO14NB
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer; Ch: 4; IN: 2; CMOS; SMD; SO14NB; LVX; 2÷3.6VDC
Number of channels: 4
Operating temperature: -40...85°C
Manufacturer series: LVX
Supply voltage: 2...3.6V DC
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Number of inputs: 2
Technology: CMOS
Kind of integrated circuit: bus buffer
Family: LVX
Case: SO14NB
Mounting: SMD
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.1 грн |
| 10+ | 41.1 грн |
| 39+ | 21.13 грн |
| 105+ | 19.98 грн |
| MC74LVX125DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: LVX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; LVX
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: LVX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.07 грн |
| FXL4TD245UMX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: UMLP16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; UMLP16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: UMLP16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
товар відсутній
| NV25640DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; TSSOP8
Operating temperature: -40...150°C
Kind of interface: serial
Memory: 1kb EEPROM
Mounting: SMD
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; TSSOP8
Operating temperature: -40...150°C
Kind of interface: serial
Memory: 1kb EEPROM
Mounting: SMD
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
товар відсутній
| NV25640DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Kind of interface: serial
Memory: 2kb EEPROM
Mounting: SMD
Case: SOIC8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Kind of interface: serial
Memory: 2kb EEPROM
Mounting: SMD
Case: SOIC8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
товар відсутній
| FDMS86105 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56
Mounting: SMD
Case: Power56
Polarisation: unipolar
Drain current: 26A
Drain-source voltage: 100V
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Power dissipation: 48W
Type of transistor: N-MOSFET
On-state resistance: 57mΩ
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 30A; 48W; Power56
Mounting: SMD
Case: Power56
Polarisation: unipolar
Drain current: 26A
Drain-source voltage: 100V
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 30A
Power dissipation: 48W
Type of transistor: N-MOSFET
On-state resistance: 57mΩ
Kind of package: reel; tape
товар відсутній
| NLU1GT126AMUTCG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Case: uDFN6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Case: uDFN6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Quiescent current: 40µA
Kind of output: 3-state
товар відсутній
| NLU1GT126MUTCG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Case: uDFN6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Case: uDFN6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Quiescent current: 40µA
Kind of output: 3-state
товар відсутній
| SD05T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.88 грн |
| 65+ | 5.77 грн |
| 100+ | 5.08 грн |
| 185+ | 4.41 грн |
| 505+ | 4.17 грн |
| HCPL2531 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Slew rate: 2.5kV/μs
товар відсутній
| MMBFJ310 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.35W; SOT23; 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
товар відсутній
| FDS2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.59 грн |
| 5+ | 91.8 грн |
| 13+ | 66.07 грн |
| 34+ | 62.59 грн |
| FDS2672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.9A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.9A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS2734 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 45nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 250V
Drain current: 3A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 45nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 250V
Drain current: 3A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Power dissipation: 2.5W
товар відсутній
| FDS3572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 5.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 5.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS3692 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.8A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS3992 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS4470 | |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 733 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.07 грн |
| 5+ | 105.71 грн |
| 10+ | 81.37 грн |
| 28+ | 76.5 грн |
| FDS5672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
| FQD6N50CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| LM358AN |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
товар відсутній
| MUR880EG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.39 грн |
| 6+ | 63.98 грн |
| 10+ | 53.55 грн |
| 17+ | 48.68 грн |
| 46+ | 45.9 грн |
| 1N4744A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; bulk; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; bulk; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.74 грн |
| 120+ | 3.12 грн |
| 340+ | 2.39 грн |
| 930+ | 2.26 грн |
| FDG6303N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.16 грн |
| 30+ | 13.07 грн |
| 85+ | 9.48 грн |
| 235+ | 8.96 грн |
| FDG6317NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Kind of package: reel; tape
Mounting: SMD
Case: SC70-6; SC88; SOT363
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 0.56Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Kind of package: reel; tape
Mounting: SMD
Case: SC70-6; SC88; SOT363
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 0.56Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
товар відсутній
| FDS8935 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGD3148NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NVJD4401NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NVJD5121NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 8.91 грн |
| 50+ | 7.09 грн |
| 100+ | 6.26 грн |
| 140+ | 5.86 грн |
| BD180G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 30W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power: 30W
Case: TO126
Mounting: THT
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 30W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power: 30W
Case: TO126
Mounting: THT
Frequency: 3MHz
товар відсутній
| ES3D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
на замовлення 4998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 27.19 грн |
| 25+ | 17.18 грн |
| 62+ | 13.07 грн |
| 169+ | 12.38 грн |
| FDMS86500L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NCP136AFCRC040T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.4V; 700mA; WLCSP6; SMD
Operating temperature: -40...85°C
Number of channels: 1
Manufacturer series: NCP136
Type of integrated circuit: voltage regulator
Voltage drop: 60mV
Output current: 0.7A
Output voltage: 0.4V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Case: WLCSP6
Mounting: SMD
Input voltage: 0.4...5.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.4V; 700mA; WLCSP6; SMD
Operating temperature: -40...85°C
Number of channels: 1
Manufacturer series: NCP136
Type of integrated circuit: voltage regulator
Voltage drop: 60mV
Output current: 0.7A
Output voltage: 0.4V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Case: WLCSP6
Mounting: SMD
Input voltage: 0.4...5.5V
товар відсутній
| NCP136AFCT105T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Operating temperature: -40...85°C
Number of channels: 1
Manufacturer series: NCP136
Type of integrated circuit: voltage regulator
Voltage drop: 60mV
Output current: 0.7A
Output voltage: 1.05V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Case: WLCSP6
Mounting: SMD
Input voltage: 1.05...5.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Operating temperature: -40...85°C
Number of channels: 1
Manufacturer series: NCP136
Type of integrated circuit: voltage regulator
Voltage drop: 60mV
Output current: 0.7A
Output voltage: 1.05V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1%
Case: WLCSP6
Mounting: SMD
Input voltage: 1.05...5.5V
товар відсутній
| NVR4003NT3G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
товар відсутній
| NVR4501NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
товар відсутній
| MM74HCT240MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
товар відсутній
| MM74HCT240WM |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
товар відсутній
| NC7WZ07P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Case: SC70-6
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Quiescent current: 10µA
Kind of output: open drain
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Case: SC70-6
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Quiescent current: 10µA
Kind of output: open drain
на замовлення 8595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 54+ | 6.96 грн |
| 62+ | 5.62 грн |
| 199+ | 4.06 грн |
| 545+ | 3.84 грн |
| 3000+ | 3.7 грн |
| FAN3278TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
товар відсутній
| WMBUS-GEVB |
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; M-Bus; prototype board
Type of accessories for development kits: expansion board
Interface: M-Bus
Kit contents: prototype board
Category: Development kits - others
Description: Expansion board; M-Bus; prototype board
Type of accessories for development kits: expansion board
Interface: M-Bus
Kit contents: prototype board
товар відсутній
| HCPL3700 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Transfer rate: 4kbps
Case: DIP8
Slew rate: 3kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4kbps; DIP8; 3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Transfer rate: 4kbps
Case: DIP8
Slew rate: 3kV/μs
товар відсутній
| MMBZ12VALT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 8.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.35A
Breakdown voltage: 12V
Leakage current: 0.2µA
Category: Transil diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 8.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.35A
Breakdown voltage: 12V
Leakage current: 0.2µA
товар відсутній