Результат пошуку "61WV5128EDBLL10KLI" : 7
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS61WV5128EDBLL-10KLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
товар відсутній |
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| IS61WV5128EDBLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V кількість в упаковці: 1 шт |
товар відсутній |
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IS61WV5128EDBLL-10KLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ |
товар відсутній |
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IS61WV5128EDBLL-10KLI-TR | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R |
товар відсутній |
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| IS61WV5128EDBLL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V кількість в упаковці: 800 шт |
товар відсутній |
| IS61WV5128EDBLL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV5128EDBLL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
| IS61WV5128EDBLL-10KLI |
|
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ
товар відсутній
| IS61WV5128EDBLL-10KLI-TR |
|
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
товар відсутній
| IS61WV5128EDBLL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 800 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 800 шт
товар відсутній