STP20NM50 (ST) - Transistors - Field N-cannal
STP20NM50
Product id: 2175
Manufacturer: STКорпус: TO-220
Uds,V: 500 V
Idd,A: 20 A
Rds(on), Ohm: 0,25 Ohm
Ciss, pF/Qg, nC: 1480/40
Монтаж: THT
On stock/available
63 pcs - stock Kyiv
2 pcs - RADIOMAG-Kyiv
3 pcs - RADIOMAG-Kharkiv
8 pcs - RADIOMAG-Dnipro
63 pcs - stock Kyiv
2 pcs - RADIOMAG-Kyiv
3 pcs - RADIOMAG-Kharkiv
8 pcs - RADIOMAG-Dnipro
Technical description STP20NM50
Price STP20NM50 From 54.54 UAH to 327.15 UAH
 Manufacturer: STMicroelectronics Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
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available 803 pc(s)  lead time 7-21 days |
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STP20NM50 Manufacturer: ST
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available 99 pc(s)  lead time 16-23 days |
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STP20NM50 Manufacturer: STMicroelectronics Material: STP20NM50 THT N channel transistors
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available 34 pc(s) lead time 7-14 days |
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 Manufacturer: STMicroelectronics Description: MOSFET N-CH 500V 20A TO220AB Package / Case: TO-220-3 Supplier Device Package: TO-220 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Power Dissipation (Max): 192W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube
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available 130 pc(s) lead time 7-22 days |
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 Manufacturer: STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp
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available 1150 pc(s) lead time 8-21 days |
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 Manufacturer: STMICROELECTRONICS Description: STMICROELECTRONICS - STP20NM50 - Power MOSFET, N Channel, 550 V, 20 A, 0.25 ohm, TO-220, Through Hole Transistor Polarity: N Channel On Resistance Rds(on): 0.25 Product Range: STP Series Power Dissipation Pd: 192 Continuous Drain Current Id: 20 Operating Temperature Max: 150 Transistor Mounting: Through Hole MSL: - Automotive Qualification Standard: - Threshold Voltage Vgs: 4 Drain Source Voltage Vds: 550 Transistor Case Style: TO-220 Rds(on) Test Voltage Vgs: 10 No. of Pins: 3 SVHC: No SVHC (25-Jun-2020)
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available 1347 pc(s) lead time 10-18 days |
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STP20NM50 Manufacturer: STP20NM50 N-KANAL POWER MOSFET
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out of stock, you can ask lead time by adding item to cart |
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STP20NM50 Manufacturer: STMicroelectronics Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
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out of stock, you can ask lead time by adding item to cart |
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STP20NM50 Manufacturer: STMicroelectronics Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
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out of stock, you can ask lead time by adding item to cart |
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With this product buy
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Manufacturer: YJ/Microsemi
Diodes, Bridge Rectifiers - Rectifier and Pulse Diodes
Корпус: DO-41
Uобр., V (RRM): 1000 V
Iвыпр., A (If): 1 A
Описание: Выпрямительный
Может заменить: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006
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Описание: Выпрямительный
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50 pcs - stock Kyiv8 pcs - RADIOMAG-Kyiv
2 pcs - RADIOMAG-Lviv
2 pcs - RADIOMAG-Kharkiv
8 pcs - RADIOMAG-Odesa
7 pcs - RADIOMAG-Dnipro
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Manufacturer: YJ/MIC
Diodes, Bridge Rectifiers - Rectifier and Pulse Diodes
Корпус: DO-201
Uобр., V (RRM): 1000 V
Iвыпр., A (If): 3 A
Описание: Выпрямительный VR=1000 B, IF =3A, IFSM =200A
Может заменить: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407
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Корпус: DO-201
Uобр., V (RRM): 1000 V
Iвыпр., A (If): 3 A
Описание: Выпрямительный VR=1000 B, IF =3A, IFSM =200A
Может заменить: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407
Монтаж: THT
Падение напряжения Vf: 1,2 V
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Manufacturer: NXP
Diodes, Bridge Rectifiers - Zener Diodes
Корпус: DO-35
Напряжение стабилизации, Vz: 18 V
Ток стабилизации, Izt: 5mA
Мощность, Pd: 0,4 W
Монтаж: THT
Температурный коэффициент: 14.4mV/K
749 pcs - stock KyivDiodes, Bridge Rectifiers - Zener Diodes
Корпус: DO-35
Напряжение стабилизации, Vz: 18 V
Ток стабилизации, Izt: 5mA
Мощность, Pd: 0,4 W
Монтаж: THT
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263 pcs - RADIOMAG-Lviv
421 pcs - RADIOMAG-Kharkiv
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