Результат пошуку "100n03" : > 120

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Назва	Виробник	Інформація	Доступність
SPB100N03S2-03	INF	TO-263	на замовлення 18000 шт: термін постачання 14-28 дні (днів)
SPB100N03S2-03	INFINEON	07+ TO-263/D2-PAK	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
SPB100N03S2-03 G	INF	TO-263	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
SPB100N03S2-03G			на замовлення 15000 шт: термін постачання 14-28 дні (днів)
SPB100N03S2L-03	INFINEON	07+ TO-263/D2-PAK	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
SPB100N03S2L-03	INFINEON	TO-263/D2-PAK	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
SPD100N03S2L-04	INFINEON	TO-252/D-PAK	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
SPI100N03S2-03			на замовлення 7020 шт: термін постачання 14-28 дні (днів)
SPI100N03S2L-03			на замовлення 7020 шт: термін постачання 14-28 дні (днів)
SPP100N03S2-03	INF	07+;	на замовлення 8000 шт: термін постачання 14-28 дні (днів)
STD100N03L	STM	SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STD100N03L	STM	07+ SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STD100N03L-1	STM	07+ SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STD100N03L-1	STM	SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STD100N03LT3			на замовлення 2119 шт: термін постачання 14-28 дні (днів)
STD100N03LT4	STM	07+ SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STD100N03LT4	STM	SOT-252	на замовлення 30000 шт: термін постачання 14-28 дні (днів)
STP100N03L-03			на замовлення 50000 шт: термін постачання 14-28 дні (днів)
UT100N03L			на замовлення 5000 шт: термін постачання 14-28 дні (днів)
SPD100N03S2L Код товару: 56344		Транзистори > Польові N-канальні	товар відсутній
UT100N03L Код товару: 85813		Транзистори > Польові N-канальні	товар відсутній
100N03A	UMW	Description: TO-252 MOSFETS ROHS Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V	товар відсутній
311100N03	C&K	Description: SWITCH THUMB DECIMAL 0.1A 120V Features: Dust Lens, Sealed Contacts Packaging: Bulk Mounting Type: Panel Mount, Snap-In Operating Temperature: -40°C ~ 65°C Termination Style: PC Pin Output Code: Decimal Read Out: 0 ~ 9 Contact Rating @ Voltage: 0.1A @ 120VAC/28VDC Actuator Type: Thumbwheel Panel Cutout Dimensions: Rectangular - 31.00mm x 16.28mm Contact Material: Copper Alloy End Caps: Included Section Width: 0.315" (8.00mm) Number of Sections: 1 Part Status: Active	товар відсутній
311100N03	C&K	Thumbwheel Switches & Pushwheel Switches Thumbwheel	товар відсутній
312100N03	C&K	Description: SWITCH THUMB BCD 0.1A 120V Features: Dust Lens, Sealed Contacts Packaging: Bulk Mounting Type: Panel Mount, Snap-In Operating Temperature: -40°C ~ 65°C Termination Style: PC Pin Output Code: BCD Read Out: 0 ~ 9 Contact Rating @ Voltage: 0.1A @ 120VAC/28VDC Actuator Type: Thumbwheel Panel Cutout Dimensions: Rectangular - 31.00mm x 16.28mm Contact Material: Copper Alloy End Caps: Included Section Width: 0.315" (8.00mm) Number of Sections: 1 Part Status: Obsolete	товар відсутній
312100N03	C&K	Switch Thumb-Pushwheel Thumbwheel BCD 10 0.1A 120VAC 28VDC Solder Pins Panel Mount/Through Hole	товар відсутній
50M060100N030	Essentra	Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 30mm Lg, Natural, Nylon	товар відсутній
50M060100N035	Essentra	Screws & Fasteners Pan Slotted Screw, M6 X 1 Thread, 35mm Lg, Natural, Nylon	товар відсутній
BSC100N03LS G	Infineon Technologies	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP	товар відсутній
BSC100N03LSGATMA1	Infineon Technologies	Description: MOSFET N-CH 30V 13A/44A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V	товар відсутній
BSC100N03LSGATMA1	Infineon Technologies	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R	товар відсутній
BSC100N03LSGATMA1	Infineon Technologies	Description: MOSFET N-CH 30V 13A/44A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V	товар відсутній
BSC100N03LSGXT	Infineon Technologies	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R	товар відсутній
BSC100N03MSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level	товар відсутній
BSC100N03MSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт	товар відсутній
BSZ100N03LSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced	товар відсутній
BSZ100N03LSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
BSZ100N03LSGATMA1	Infineon Technologies	Description: MOSFET N-CH 30V 12A/40A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TSDSON-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V	товар відсутній
BSZ100N03MSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced	товар відсутній
BSZ100N03MSGATMA1	INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
CMS100N03H8-HF	Comchip Technology	Description: MOSFET N-CH 30V 100A DFN5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 3.6W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5x6 (PR-PAK) Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4222 pF @ 15 V	товар відсутній
G100N03D5	Goford Semiconductor	Description: N-CH, 30V, 100A, RD(MAX)<3.5M@10 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V	товар відсутній
MCAC100N03Y-TP	Micro Commercial Co	Description: N-CHANNEL MOSFET, DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 35W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2559 pF @ 15 V	товар відсутній
MCAC100N03Y-TP	Micro Commercial Co	Description: N-CHANNEL MOSFET, DFN5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Power Dissipation (Max): 35W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2559 pF @ 15 V	товар відсутній
MCAC100N03Y-TP	Micro Commercial Components (MCC)	MOSFET N-CHANNEL MOSFET, DFN5060	товар відсутній
RRS100N03TB1	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V	товар відсутній
RSH100N03TB1	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RSH100N03TB1	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RSS100N03FRATB	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101	товар відсутній
RSS100N03FU6TB	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RSS100N03HZGTB	ROHM SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced	товар відсутній
RSS100N03HZGTB	ROHM SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
RSS100N03HZGTB	Rohm Semiconductor	Description: NCH 30V 10A AUTOMOTIVE POWER MOS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V Grade: Automotive Qualification: AEC-Q101	товар відсутній
RSS100N03TB	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RSS100N03TB	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RSS100N03TB1	Rohm Semiconductor	Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V	товар відсутній
RXH100N03TB1	Rohm Semiconductor	Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V	товар відсутній
SPB100N03S2-03	Infineon Technologies	Description: MOSFET N-CH 30V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V	товар відсутній
SPB100N03S2-03 G	Infineon Technologies	Description: MOSFET N-CH 30V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V	товар відсутній
SPB100N03S2L-03	Infineon Technologies	Description: MOSFET N-CH 30V 100A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V	товар відсутній

SPB100N03S2-03