Результат пошуку "2N60C" : 112
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| Фото | Назва | Виробник | Інформація |
Доступність |
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IXGR32N60CD1 Код товару: 95812 |
 Транзистори > IGBT |
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FQD2N60CTF | ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
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FQD2N60CTM | ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
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| FQD2N60CTM | ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
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FQD2N60CTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD2N60CTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQD2N60CTM-WS | ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R |
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FQP12N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube |
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| FQP2N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube |
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FQP2N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube |
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FQPF12N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
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FQPF12N60CT | ON Semiconductor |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube |
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FQPF2N60C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.35A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
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FQPF2N60C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.35A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQPF2N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube |
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| FQPF2N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube |
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FQU2N60CTU | ON Semiconductor |
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube |
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HGTG12N60C3D | ON Semiconductor |
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube |
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| HGTG12N60C3D | ON Semiconductor |
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube |
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HGTP12N60C3 | ON Semiconductor |
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail |
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HGTP12N60C3D | ON Semiconductor |
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220 Tube |
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IXGA12N60CD1 | IXYS |
IGBT Transistors 24 Amps 600V 2.7 Rds |
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IXGH72N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
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IXGH72N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns кількість в упаковці: 1 шт |
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| IXGK72N60C3H1 | IXYS | IGBT Transistors 75Amps 600V |
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IXGN72N60C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXGN72N60C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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IXGN72N60C3H1 | Littelfuse |
Trans IGBT Module N-CH 600V 78A 360000mW |
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IXGX72N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
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IXGX72N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns кількість в упаковці: 1 шт |
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SPB02N60C3 | Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R |
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SPB02N60C3ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R |
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SPD02N60C3 | Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R |
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SPD02N60C3BTMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R |
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SPP02N60C3 | Infineon Technologies |
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube |
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SPP02N60C3XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube |
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SPS02N60C3BKMA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-251 Tube |
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SPU02N60C3BKMA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 Tube |
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TSM2N60CH C5 | Taiwan Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube |
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TSM2N60CP R0 | Taiwan Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
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TSM2N60CP RO | Taiwan Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
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YJ2N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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YJ2N60CI | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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YJ2N60CP | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FQD2N60CTF |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQD2N60CTM |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQD2N60CTM |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQD2N60CTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQD2N60CTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQD2N60CTM-WS |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| FQP12N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FQP2N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FQP2N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| FQPF12N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FQPF12N60CT |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Tube
товар відсутній
| FQPF2N60C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQPF2N60C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.35A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.35A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQPF2N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FQPF2N60C |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| FQU2N60CTU |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| HGTG12N60C3D |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| HGTG12N60C3D |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| HGTP12N60C3 |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
товар відсутній
| HGTP12N60C3D |
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Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| IXGH72N60C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
| IXGH72N60C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
| IXGN72N60C3H1 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXGN72N60C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| IXGX72N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
| IXGX72N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
| SPB02N60C3 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| SPB02N60C3ATMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
| SPD02N60C3 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| SPD02N60C3BTMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| SPP02N60C3 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| SPP02N60C3XKSA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
| SPS02N60C3BKMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-251 Tube
Trans MOSFET N-CH 650V 1.8A 3-Pin(3+Tab) TO-251 Tube
товар відсутній
| SPU02N60C3BKMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 Tube
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 Tube
товар відсутній
| TSM2N60CH C5 |
|
Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) IPAK Tube
товар відсутній
| TSM2N60CP R0 |
|
Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| TSM2N60CP RO |
|
Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
товар відсутній
| YJ2N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| YJ2N60CI |
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| YJ2N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| YJ2N60CP |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
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