Результат пошуку "6n65" : > 120
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Мінімальне замовлення: 3
Мінімальне замовлення: 2
Мінімальне замовлення: 7
Мінімальне замовлення: 4
Мінімальне замовлення: 2
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Мінімальне замовлення: 833
Мінімальне замовлення: 592
Мінімальне замовлення: 620
Мінімальне замовлення: 392
Мінімальне замовлення: 807
Мінімальне замовлення: 392
Мінімальне замовлення: 494
Мінімальне замовлення: 338
Мінімальне замовлення: 1025
Мінімальне замовлення: 833
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Мінімальне замовлення: 338
Мінімальне замовлення: 84
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WMK26N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.2...1.45mm |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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WMK26N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 59 шт: термін постачання 7-14 дні (днів) |
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WML26N65C2; 20A; 650V; 34W; 0,19R; N-канальный; Корпус: TO-220F; WAYON |
на замовлення 40 шт: термін постачання 2-3 дні (днів) |
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WML26N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.2...1.45mm |
на замовлення 441 шт: термін постачання 21-30 дні (днів) |
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WML26N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.2...1.45mm кількість в упаковці: 1 шт |
на замовлення 441 шт: термін постачання 7-14 дні (днів) |
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WMN16N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 7-14 дні (днів) |
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WMO16N65C2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 626 шт: термін постачання 7-14 дні (днів) |
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MPF06N65 |
на замовлення 10 шт: термін постачання 14-28 дні (днів) |
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SPA26N65C3 |
на замовлення 2002 шт: термін постачання 14-28 дні (днів) |
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STF16N65M5 |
на замовлення 600 шт: термін постачання 2-3 дні (днів) |
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STI16N65M5 |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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STU6N65K3 | STMicroelectronics |
на замовлення 85 шт: термін постачання 14-28 дні (днів) |
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TMPF6N65G |
на замовлення 19102 шт: термін постачання 14-28 дні (днів) |
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YMP6N65BCD |
на замовлення 6000 шт: термін постачання 14-28 дні (днів) |
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74HC126N,652 | NXP USA Inc. |
Description: IC BUFFER NON-INVERT 6V 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 14-DIP Part Status: Obsolete |
на замовлення 27801 шт: термін постачання 21-31 дні (днів) |
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74HC166N,652 | NXP USA Inc. |
Description: IC 8BIT SHIFT REGISTER 16-DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Push-Pull Mounting Type: Through Hole Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-DIP Number of Bits per Element: 8 |
на замовлення 11707 шт: термін постачання 21-31 дні (днів) |
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74HC366N,652 | NXP USA Inc. |
Description: IC BUFFER INVERT 6V 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 6 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-DIP |
на замовлення 1055 шт: термін постачання 21-31 дні (днів) |
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74HC4016N,652 | NXP USA Inc. |
Description: IC SWITCH SPST-NOX4 120OHM 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 120Ohm -3db Bandwidth: 160MHz Supplier Device Package: 14-DIP Voltage - Supply, Single (V+): 2V ~ 10V Crosstalk: -60dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 9Ohm Switch Time (Ton, Toff) (Max): 28ns, 22ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 4 |
на замовлення 5403 шт: термін постачання 21-31 дні (днів) |
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74HC4066N,652 | NXP USA Inc. |
Description: IC SWITCH SPST-NOX4 95OHM 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 95Ohm -3db Bandwidth: 200MHz Supplier Device Package: 14-DIP Voltage - Supply, Single (V+): 2V ~ 10V Crosstalk: -60dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 3Ohm Switch Time (Ton, Toff) (Max): 30ns, 20ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 4 |
на замовлення 7886 шт: термін постачання 21-31 дні (днів) |
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74HC4316N,652 | NXP USA Inc. |
Description: IC SWITCH SPST-NOX4 135OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 135Ohm -3db Bandwidth: 160MHz Supplier Device Package: 16-DIP Voltage - Supply, Single (V+): 2V ~ 10V Voltage - Supply, Dual (V±): ±1V ~ 5V Crosstalk: -60dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 6Ohm Switch Time (Ton, Toff) (Max): 16ns, 16ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 4 |
на замовлення 1002 шт: термін постачання 21-31 дні (днів) |
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74HC646N,652 | NXP USA Inc. |
Description: IC TXRX NON-INVERT 6V 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 24-DIP Part Status: Obsolete |
на замовлення 3515 шт: термін постачання 21-31 дні (днів) |
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74HC7266N,652 | NXP USA Inc. |
Description: IC GATE XNOR 4CH 2-INP 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: XNOR (Exclusive NOR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-DIP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Part Status: Obsolete Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 7183 шт: термін постачання 21-31 дні (днів) |
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74HC86N,652 | NXP USA Inc. |
Description: IC GATE XOR 4CH 2-INP 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-DIP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 36291 шт: термін постачання 21-31 дні (днів) |
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74HCT126N,652 | NXP USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 14-DIP Part Status: Obsolete |
на замовлення 6237 шт: термін постачання 21-31 дні (днів) |
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74HCT166N,652 | NXP USA Inc. |
Description: IC SHIFT REG 8BIT PI-SO 16-DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Push-Pull Mounting Type: Through Hole Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 16-DIP Number of Bits per Element: 8 |
на замовлення 6201 шт: термін постачання 21-31 дні (днів) |
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74HCT366N,652 | NXP USA Inc. |
Description: IC BUFFER INVERT 5.5V 16DIP Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 6 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 16-DIP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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EVALM3TS6665PNTOBO1 | Infineon Technologies |
Description: EVAL BOARD Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IKB20N65H5, IKD06N65ET6, IRS2890DS, IRS44273L Supplied Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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N65LVDT32BD | Texas Instruments |
Description: IC DIFF RECEIVER H-S 16-SOIC Packaging: Bulk Part Status: Active |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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STD16N65M2 Код товару: 198608 |
Транзистори > Польові N-канальні |
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STD16N65M5 Код товару: 189591 |
Транзистори > Польові N-канальні |
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STF16N65M5 Код товару: 201571 |
Мікросхеми > Інші мікросхеми |
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STF6N65K3 Код товару: 198720 |
Транзистори > Польові N-канальні |
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STP16N65M5 (транзистори польові N-канальні) Код товару: 43778 |
Різні комплектуючі > Різні комплектуючі 2 |
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5STP 26N6500 | ABB |
Category: Button thyristors Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 4.52kA; 2.88kA; Igt: 400mA Mounting: Press-Pack Type of thyristor: hockey-puck Case: Ø150/100mm Max. off-state voltage: 6.5kV Max. load current: 4.52kA Load current: 2.88kA Gate current: 400mA Max. forward impulse current: 65kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
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BXP16N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Pulsed drain current: 64A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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IGD06N65T6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/35ns Switching Energy: 60µJ (on), 30µJ (off) Test Condition: 400V, 3A, 47Ohm, 15V Gate Charge: 13.7 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 31 W |
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IXFA26N65X3 | Littelfuse | Littelfuse MOSFET 26A 650V X3 TO263 |
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IXFH26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFH26N65X3 | Littelfuse | Littelfuse MOSFET 26A 650V X3 TO247 |
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IXFH46N65X2 | Littelfuse | Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247AD |
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IXFH46N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Pulsed drain current: 65A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 165ns кількість в упаковці: 1 шт |
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IXFP26N65X3 | Littelfuse | Littelfuse MOSFET 26A 650V X3 TO220 |
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KSM6----N6--5-- | Essentra | Knobs & Dials KNRLD KNB PRES ON FL M6 |
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SiHA6N65E-E3 | Vishay Siliconix |
Description: MOSFET N-CHANNEL 650V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
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SiHA6N65E-E3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
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SIHA6N65E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
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SIHA6N65E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
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SIHA6N65E-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 650V |
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SIHB6N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
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SIHB6N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHB6N65E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 7A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
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SIHB6N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK |
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SIHB6N65E-GE3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
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SIHD6N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
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SIHD6N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHD6N65E-GE3 | Vishay | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK |
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SIHD6N65ET1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
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SIHD6N65ET1-GE3 | Vishay / Siliconix | MOSFET 650V Vds E Series DPAK TO-252 |
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SIHD6N65ET4-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
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SIHD6N65ET4-GE3 | Vishay / Siliconix | MOSFET 650V Vds E Series DPAK TO-252 |
товар відсутній |
WMK26N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
на замовлення 59 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.06 грн |
5+ | 107.79 грн |
9+ | 93.88 грн |
24+ | 88.32 грн |
WMK26N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 59 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 157.27 грн |
5+ | 134.32 грн |
9+ | 112.66 грн |
24+ | 105.98 грн |
500+ | 101.81 грн |
WML26N65C2; 20A; 650V; 34W; 0,19R; N-канальный; Корпус: TO-220F; WAYON |
на замовлення 40 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 109.21 грн |
WML26N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
на замовлення 441 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 120.58 грн |
5+ | 100.84 грн |
11+ | 77.19 грн |
29+ | 73.02 грн |
WML26N65C4 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
кількість в упаковці: 1 шт
на замовлення 441 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 144.69 грн |
5+ | 125.66 грн |
11+ | 92.63 грн |
29+ | 87.62 грн |
WMN16N65C2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.99 грн |
5+ | 68.46 грн |
18+ | 56.75 грн |
47+ | 53.41 грн |
500+ | 51.74 грн |
WMO16N65C2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 626 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.59 грн |
5+ | 63.26 грн |
19+ | 52.57 грн |
51+ | 49.24 грн |
2500+ | 47.57 грн |
74HC126N,652 |
Виробник: NXP USA Inc.
Description: IC BUFFER NON-INVERT 6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 6V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
на замовлення 27801 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 24.34 грн |
74HC166N,652 |
Виробник: NXP USA Inc.
Description: IC 8BIT SHIFT REGISTER 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Number of Bits per Element: 8
Description: IC 8BIT SHIFT REGISTER 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-DIP
Number of Bits per Element: 8
на замовлення 11707 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
592+ | 34.49 грн |
74HC366N,652 |
Виробник: NXP USA Inc.
Description: IC BUFFER INVERT 6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-DIP
Description: IC BUFFER INVERT 6V 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 6
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-DIP
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
620+ | 32.46 грн |
74HC4016N,652 |
Виробник: NXP USA Inc.
Description: IC SWITCH SPST-NOX4 120OHM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: 14-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 9Ohm
Switch Time (Ton, Toff) (Max): 28ns, 22ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 120OHM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: 14-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 9Ohm
Switch Time (Ton, Toff) (Max): 28ns, 22ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 4
на замовлення 5403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
392+ | 52.06 грн |
74HC4066N,652 |
Виробник: NXP USA Inc.
Description: IC SWITCH SPST-NOX4 95OHM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 95Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 95OHM 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 95Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 30ns, 20ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 4
на замовлення 7886 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
807+ | 25.02 грн |
74HC4316N,652 |
Виробник: NXP USA Inc.
Description: IC SWITCH SPST-NOX4 135OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 135Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: 16-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 16ns, 16ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 135OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 135Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: 16-DIP
Voltage - Supply, Single (V+): 2V ~ 10V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 16ns, 16ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
392+ | 52.06 грн |
74HC646N,652 |
Виробник: NXP USA Inc.
Description: IC TXRX NON-INVERT 6V 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 24-DIP
Part Status: Obsolete
Description: IC TXRX NON-INVERT 6V 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.600", 15.24mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 24-DIP
Part Status: Obsolete
на замовлення 3515 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
494+ | 41.25 грн |
74HC7266N,652 |
Виробник: NXP USA Inc.
Description: IC GATE XNOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XNOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 7183 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
338+ | 60.18 грн |
74HC86N,652 |
Виробник: NXP USA Inc.
Description: IC GATE XOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-DIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 36291 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1025+ | 19.61 грн |
74HCT126N,652 |
Виробник: NXP USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-DIP
Part Status: Obsolete
на замовлення 6237 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 24.34 грн |
74HCT166N,652 |
Виробник: NXP USA Inc.
Description: IC SHIFT REG 8BIT PI-SO 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-DIP
Number of Bits per Element: 8
Description: IC SHIFT REG 8BIT PI-SO 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 16-DIP
Number of Bits per Element: 8
на замовлення 6201 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
592+ | 34.49 грн |
74HCT366N,652 |
Виробник: NXP USA Inc.
Description: IC BUFFER INVERT 5.5V 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-DIP
Description: IC BUFFER INVERT 5.5V 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-DIP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
338+ | 60.18 грн |
EVALM3TS6665PNTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKB20N65H5, IKD06N65ET6, IRS2890DS, IRS44273L
Supplied Contents: Board(s)
Description: EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IKB20N65H5, IKD06N65ET6, IRS2890DS, IRS44273L
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 32131.84 грн |
N65LVDT32BD |
Виробник: Texas Instruments
Description: IC DIFF RECEIVER H-S 16-SOIC
Packaging: Bulk
Part Status: Active
Description: IC DIFF RECEIVER H-S 16-SOIC
Packaging: Bulk
Part Status: Active
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
84+ | 244.1 грн |
STP16N65M5 (транзистори польові N-канальні) Код товару: 43778 |
товар відсутній
5STP 26N6500 |
Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 4.52kA; 2.88kA; Igt: 400mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Case: Ø150/100mm
Max. off-state voltage: 6.5kV
Max. load current: 4.52kA
Load current: 2.88kA
Gate current: 400mA
Max. forward impulse current: 65kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 4.52kA; 2.88kA; Igt: 400mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Case: Ø150/100mm
Max. off-state voltage: 6.5kV
Max. load current: 4.52kA
Load current: 2.88kA
Gate current: 400mA
Max. forward impulse current: 65kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
BXP16N65F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IGD06N65T6ARMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/35ns
Switching Energy: 60µJ (on), 30µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 13.7 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 31 W
Description: IGBT TRENCH FS 650V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/35ns
Switching Energy: 60µJ (on), 30µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 13.7 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 31 W
товар відсутній
IXFH26N65X2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH46N65X3 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
кількість в упаковці: 1 шт
товар відсутній
SiHA6N65E-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CHANNEL 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товар відсутній
SIHA6N65E-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товар відсутній
SIHA6N65E-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товар відсутній
SIHB6N65E-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHB6N65E-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHB6N65E-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
товар відсутній
SIHD6N65E-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SIHD6N65E-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIHD6N65ET1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
товар відсутній
SIHD6N65ET4-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
товар відсутній