Результат пошуку "A.PT50" : 112
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| Фото | Назва | Виробник | Інформація |
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APT5017SVRG | MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
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APT5018BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
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APT5018BFLLG | Microchip Technology |
Trans MOSFET N-CH 500V 27A 3-Pin(3+Tab) TO-247 Tube |
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APT5018BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
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APT5018SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
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APT5018SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
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| APT5020BNRG | Microchip Technology |
N-Channel Power MOSFET |
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APT5020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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APT5020BVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube |
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APT5020BVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube |
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APT5020BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
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APT5020BVRG | Microchip Technology |
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube |
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APT5020SVFRG | Microchip Technology |
Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK Tube |
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APT5024BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
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APT5024BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of channel: enhanced |
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APT5024BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 221nC Kind of channel: enhanced |
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APT5024BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.21µC Kind of channel: enhanced |
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APT5024SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 43nC Kind of channel: enhanced |
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APT5024SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of channel: enhanced |
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APT50GN120L2DQ2G | Microchip Technology |
Trans IGBT Chip N-CH 1200V 134A 543W 3-Pin(3+Tab) TO-264 MAX Tube |
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APT50GN60BDQ2G | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
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APT50GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
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APT50GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube |
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APT50GP60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 100A 625W 3-Pin(3+Tab) TO-247 Tube |
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APT50GR120JD30 | Microchip Technology |
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube |
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APT50GR120JD30 | Microchip Technology |
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube |
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APT50GT120B2RG | Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube |
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APT50GT120B2RG | Microchip Technology |
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube |
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APT50GT120LRDQ2G | Microchip Technology |
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube |
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APT50M38JLL | Microchip Technology |
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube |
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APT50M38JLL | Microchip Technology |
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube |
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APT50M50JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube |
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APT50M50JLL | Microchip Technology |
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube |
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APT50M50JVFR | Microchip Technology |
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube |
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APT50M50JVR | Microchip Technology |
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube |
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APT50M50L2LLG | Microchip Technology |
Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX Tube |
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APT50M65B2FLLG | Microchip Technology |
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) T-MAX Tube |
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APT50M65JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube |
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APT50M65JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube |
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APT50M65LFLLG | Microchip Technology |
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube |
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APT50M65LLLG | Microchip Technology |
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube |
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APT50M75B2FLLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube |
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APT50M75B2FLLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube |
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APT50M75B2LLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube |
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APT50M75B2LLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube |
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APT50M75B2LLG | Microchip Technology |
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube |
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APT50M75JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube |
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APT50M75JFLL | Microchip Technology |
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube |
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APT50M85JVFR | Microchip Technology |
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube |
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APT50M85JVR | Microchip Technology |
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube |
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APT50M85JVR | Microchip Technology |
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube |
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APT50N60JCCU2 | Microchip Technology |
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube |
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| APT5017SVRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
товар відсутній
| APT5018BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018BFLLG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 27A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 27A 3-Pin(3+Tab) TO-247 Tube
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| APT5018BLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018SFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5018SLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
товар відсутній
| APT5020BVFRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5020BVFRG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5020BVFRG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5020BVRG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| APT5020BVRG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT5020SVFRG |
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Виробник: Microchip Technology
Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK Tube
Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK Tube
товар відсутній
| APT5024BFLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
товар відсутній
| APT5024BLLG |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of channel: enhanced
товар відсутній
| APT5024BVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 221nC
Kind of channel: enhanced
товар відсутній
| APT5024BVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhanced
товар відсутній
| APT5024SLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
товар відсутній
| APT5024SVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of channel: enhanced
товар відсутній
| APT50GN120L2DQ2G |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 134A 543W 3-Pin(3+Tab) TO-264 MAX Tube
Trans IGBT Chip N-CH 1200V 134A 543W 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
| APT50GN60BDQ2G |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT50GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT50GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 107A 366W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT50GP60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 100A 625W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 100A 625W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT50GR120JD30 |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube
товар відсутній
| APT50GR120JD30 |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube
товар відсутній
| APT50GT120B2RG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50GT120B2RG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube
Trans IGBT Chip N-CH 1200V 94A 625W 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50GT120LRDQ2G |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT50M38JLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
товар відсутній
| APT50M38JLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 88A 4-Pin SOT-227 Tube
товар відсутній
| APT50M50JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube
товар відсутній
| APT50M50JLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 Tube
товар відсутній
| APT50M50JVFR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube
товар відсутній
| APT50M50JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 77A 4-Pin SOT-227 Tube
товар відсутній
| APT50M50L2LLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX Tube
Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX Tube
товар відсутній
| APT50M65B2FLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M65JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube
товар відсутній
| APT50M65JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 58A 4-Pin SOT-227 Tube
товар відсутній
| APT50M65LFLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT50M65LLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 500V 67A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT50M75B2FLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M75B2FLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M75B2LLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M75B2LLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M75B2LLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 500V 57A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT50M75JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
товар відсутній
| APT50M75JFLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 51A 4-Pin SOT-227 Tube
товар відсутній
| APT50M85JVFR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
товар відсутній
| APT50M85JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
товар відсутній
| APT50M85JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227 Tube
товар відсутній
| APT50N60JCCU2 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227 Tube
товар відсутній
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