Результат пошуку "IRLB" : 174
Вид перегляду :
Мінімальне замовлення: 500
Мінімальне замовлення: 500
Мінімальне замовлення: 2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2608011024000 | Würth Elektronik |
 Description: RF TXRX MODULE BT CHIP SMDPackaging: Tape & Reel (TR) Package / Case: Module Sensitivity: -96dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 512kB Flash, 64kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 3dBm Data Rate: 1Mbps Protocol: Bluetooth v4.2 Current - Receiving: 5.4mA Current - Transmitting: 5.3mA Antenna Type: Integrated, Chip Utilized IC / Part: nRF52832 Modulation: DSSS RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
2608011124000 | Würth Elektronik |
Description: RF TXRX MODULE BT CAST SMD Packaging: Tape & Reel (TR) Package / Case: Module Sensitivity: -96dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 512kB Flash, 64kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 3dBm Data Rate: 1Mbps Protocol: Bluetooth v4.2 Current - Receiving: 5.4mA Current - Transmitting: 5.3mA Antenna Type: Antenna Not Included, Castellation Utilized IC / Part: nRF52832 Modulation: DSSS RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
2608011124000 | Würth Elektronik |
Description: RF TXRX MODULE BT CAST SMD Packaging: Cut Tape (CT) Package / Case: Module Sensitivity: -96dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 512kB Flash, 64kB RAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 3dBm Data Rate: 1Mbps Protocol: Bluetooth v4.2 Current - Receiving: 5.4mA Current - Transmitting: 5.3mA Antenna Type: Antenna Not Included, Castellation Utilized IC / Part: nRF52832 Modulation: DSSS RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 858 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
355 | Adafruit |
Adafruit Accessories N-channel Power MOSFET 30V/60A |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
|
||||||||
|
|
IRLB3036PBF Код товару: 58855 |
IR |
Транзистори > Польові N-канальні Корпус: TO-220AB Uds,V: 60 V Idd,A: 195 A Rds(on), Ohm: 1,9 mOhm Ciss, pF/Qg, nC: 11210/91 Монтаж: THT |
товар відсутній
|
|||||||||
|
|
IRLB3813 Код товару: 99529 |
IR |
Транзистори > Польові N-канальні Uds,V: 30 V Idd,A: 190 A Rds(on), Ohm: 1,95 mOhm Ciss, pF/Qg, nC: 8420/57 Примітка: Керування логічним рівнем Монтаж: THT |
товар відсутній
|
|||||||||
|
|
IRLB4030PBF Код товару: 83396 |
IR |
Транзистори > Польові N-канальні Корпус: TO-220AB Uds,V: 100 V Idd,A: 180 A Rds(on), Ohm: 3,4 Ohm Ciss, pF/Qg, nC: 11360/87 Монтаж: THT |
товар відсутній
|
|||||||||
|
IRLB8314PBF Код товару: 145201 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||||||||||
|
IRLBA1304 транзистор Код товару: 59934 |
Різні комплектуючі > Різні комплектуючі 2 |
товар відсутній
|
|||||||||||
 |
IRLBA1304P Код товару: 104502 |
Мікросхеми > Інші мікросхеми 8542 39 90 00 |
товар відсутній
|
||||||||||
|
IRLBA1304PPBF Код товару: 125791 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||||||||||
|
IRLBA3803PPBF (транзистор) Код товару: 57906 |
Транзистори > Польові N-канальні |
товар відсутній
|
|||||||||||
|
|
IRLB3034PBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
| IRLB3034PBFXKMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V |
товар відсутній |
||||||||||
| IRLB3034PBFXKMA1 | Infineon Technologies |
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
||||||||||
| IRLB3034PBFXKMA1 | Infineon Technologies |
MOSFET TRENCH <= 40V |
товар відсутній |
||||||||||
|
|
IRLB3036GPBF | Infineon Technologies |
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
|||||||||
|
|
IRLB3036GPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V |
товар відсутній |
|||||||||
| IRLB3036PBF | Infineon Technologies |
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
||||||||||
| IRLB3036PBFXKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V |
товар відсутній |
||||||||||
| IRLB3036PBFXKMA1 | Infineon Technologies |
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
||||||||||
| IRLB3036PBFXKMA1 | Infineon Technologies |
MOSFET TRENCH 40<-<100V |
товар відсутній |
||||||||||
|
|
IRLB3813PBF | Infineon Technologies |
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
|
|
IRLB4030PBF | Infineon Technologies |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
|
|
IRLB4030PBF | Infineon Technologies |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
|
|
IRLB4030PBF | INFINEON |
Description: INFINEON - IRLB4030PBF - Leistungs-MOSFET, n-Kanal, 100 V, 110 A, 0.0034 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 370W Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (23-Jan-2024) |
товар відсутній |
|||||||||
| IRLB4030PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V |
товар відсутній |
||||||||||
| IRLB4030PBFXKMA1 | Infineon Technologies | IRLB4030PBFXKMA1 |
товар відсутній |
||||||||||
| IRLB4030PBFXKMA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
товар відсутній |
||||||||||
|
|
IRLB8743PBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
|
|
IRLB8748PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 92A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
|||||||||
|
|
IRLB8748PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 92A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
|||||||||
|
|
IRLB8748PBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
|||||||||
|
|
IRLBA1304 | Infineon Technologies |
Description: MOSFET N-CH 40V 185A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
товар відсутній |
|||||||||
|
|
IRLBA1304P | Infineon Technologies |
Description: MOSFET N-CH 40V 185A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
товар відсутній |
|||||||||
|
|
IRLBA1304PPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 185A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
товар відсутній |
|||||||||
|
|
IRLBA3803 | Vishay Siliconix |
Description: MOSFET N-CH 30V 179A SUPER-220 Packaging: Tube Package / Case: Super-220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
товар відсутній |
|||||||||
|
|
IRLBA3803P | Infineon Technologies |
Description: MOSFET N-CH 30V 179A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
товар відсутній |
|||||||||
|
|
IRLBA3803PPBF | Infineon Technologies |
Trans MOSFET N-CH Si 30V 179A 3-Pin(3+Tab) TO-273AA |
товар відсутній |
|||||||||
| IRLBD59N04ETRLP | Infineon Technologies |
Description: MOSFET N-CH 40V 59A TO263-5 Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
товар відсутній |
||||||||||
|
|
IRLBL1304 | Infineon Technologies |
Description: MOSFET N-CH 40V 185A SUPER D2PAK Packaging: Tube Package / Case: Super D2-Pak Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 110A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Super D2-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
товар відсутній |
|||||||||
|
|
OMNIIRLBP1277 | Thomas Research Products |
Description: INFRARED CEILING SENSOR Packaging: Box Color: White, Off Output Type: Relay Mounting Type: Ceiling Operating Temperature: 0°C ~ 40°C Voltage - Supply: 100/277VAC Sensor Type: Passive Infrared Coverage: 1500 Square Feet Manual Override: No Part Status: Active |
товар відсутній |
|||||||||
| OMNIIRLBP1277 | Oslo Switch |
Description: OMNI-BP PASSIVE INFRARED CEILING Packaging: Bulk |
товар відсутній |
||||||||||
|
|
596-00247 | HellermannTyton |
Description: LABEL ELECTRL WARN 6.5"X1" 50PC Packaging: Bulk Features: Reflective Mounting Type: Adhesive Length: 1.000" (25.40mm) Shape: Rectangle Width: 6.500" (165.10mm) Material - Body: Vinyl Applications: Solar Ratings: IFC, NEC, UL Part Status: Active Color - Background: Red Language: English Application Specifics: Safety Arrangement: Text Only Legend (Text): Caution : Solar Circuit Legend (Symbol Only): No Symbol Color - Legend: White Print Type: Pre-Printed, Printable (Thermal Transfer) |
товар відсутній |
| 2608011024000 |
|
Виробник: Würth Elektronik
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Integrated, Chip
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Integrated, Chip
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 1103.36 грн |
| 2608011124000 |
|
Виробник: Würth Elektronik
Description: RF TXRX MODULE BT CAST SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Antenna Not Included, Castellation
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CAST SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Antenna Not Included, Castellation
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 742.75 грн |
| 2608011124000 |
|
Виробник: Würth Elektronik
Description: RF TXRX MODULE BT CAST SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Antenna Not Included, Castellation
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CAST SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 64kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 5.4mA
Current - Transmitting: 5.3mA
Antenna Type: Antenna Not Included, Castellation
Utilized IC / Part: nRF52832
Modulation: DSSS
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1103.69 грн |
| 10+ | 932.24 грн |
| 50+ | 832.5 грн |
| 100+ | 699.19 грн |
| 355 |
|
Виробник: Adafruit
Adafruit Accessories N-channel Power MOSFET 30V/60A
Adafruit Accessories N-channel Power MOSFET 30V/60A
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.97 грн |
| IRLB3036PBF Код товару: 58855 |
|
Виробник: IR
Транзистори > Польові N-канальні
Корпус: TO-220AB
Uds,V: 60 V
Idd,A: 195 A
Rds(on), Ohm: 1,9 mOhm
Ciss, pF/Qg, nC: 11210/91
Монтаж: THT
Транзистори > Польові N-канальні
Корпус: TO-220AB
Uds,V: 60 V
Idd,A: 195 A
Rds(on), Ohm: 1,9 mOhm
Ciss, pF/Qg, nC: 11210/91
Монтаж: THT
товар відсутній
| IRLB3813 Код товару: 99529 |
|
Виробник: IR
Транзистори > Польові N-канальні
Uds,V: 30 V
Idd,A: 190 A
Rds(on), Ohm: 1,95 mOhm
Ciss, pF/Qg, nC: 8420/57
Примітка: Керування логічним рівнем
Монтаж: THT
Транзистори > Польові N-канальні
Uds,V: 30 V
Idd,A: 190 A
Rds(on), Ohm: 1,95 mOhm
Ciss, pF/Qg, nC: 8420/57
Примітка: Керування логічним рівнем
Монтаж: THT
товар відсутній
| IRLB4030PBF Код товару: 83396 |
|
Виробник: IR
Транзистори > Польові N-канальні
Корпус: TO-220AB
Uds,V: 100 V
Idd,A: 180 A
Rds(on), Ohm: 3,4 Ohm
Ciss, pF/Qg, nC: 11360/87
Монтаж: THT
Транзистори > Польові N-канальні
Корпус: TO-220AB
Uds,V: 100 V
Idd,A: 180 A
Rds(on), Ohm: 3,4 Ohm
Ciss, pF/Qg, nC: 11360/87
Монтаж: THT
товар відсутній
| IRLB3034PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB3034PBFXKMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
товар відсутній
| IRLB3034PBFXKMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 40V 343A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB3036GPBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB
товар відсутній
| IRLB3036GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товар відсутній
| IRLB3036PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB3036PBFXKMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
товар відсутній
| IRLB3036PBFXKMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB3813PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB4030PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB4030PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB4030PBF |
|
Виробник: INFINEON
Description: INFINEON - IRLB4030PBF - Leistungs-MOSFET, n-Kanal, 100 V, 110 A, 0.0034 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 110A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 370W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm
SVHC: No SVHC (23-Jan-2024)
Description: INFINEON - IRLB4030PBF - Leistungs-MOSFET, n-Kanal, 100 V, 110 A, 0.0034 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 110A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 370W
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0034ohm
SVHC: No SVHC (23-Jan-2024)
товар відсутній
| IRLB4030PBFXKMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
товар відсутній
| IRLB8743PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLB8748PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLB8748PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| IRLB8748PBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| IRLBA1304 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товар відсутній
| IRLBA1304P |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товар відсутній
| IRLBA1304PPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 40V 185A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товар відсутній
| IRLBA3803 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 179A SUPER-220
Packaging: Tube
Package / Case: Super-220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 30V 179A SUPER-220
Packaging: Tube
Package / Case: Super-220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товар відсутній
| IRLBA3803P |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 179A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 30V 179A SUPER-220
Packaging: Tube
Package / Case: TO-273AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 71A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SUPER-220™ (TO-273AA)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товар відсутній
| IRLBA3803PPBF |
|
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 179A 3-Pin(3+Tab) TO-273AA
Trans MOSFET N-CH Si 30V 179A 3-Pin(3+Tab) TO-273AA
товар відсутній
| IRLBD59N04ETRLP |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 59A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Description: MOSFET N-CH 40V 59A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
товар відсутній
| IRLBL1304 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 185A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 40V 185A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
товар відсутній
| OMNIIRLBP1277 |
|
Виробник: Thomas Research Products
Description: INFRARED CEILING SENSOR
Packaging: Box
Color: White, Off
Output Type: Relay
Mounting Type: Ceiling
Operating Temperature: 0°C ~ 40°C
Voltage - Supply: 100/277VAC
Sensor Type: Passive Infrared
Coverage: 1500 Square Feet
Manual Override: No
Part Status: Active
Description: INFRARED CEILING SENSOR
Packaging: Box
Color: White, Off
Output Type: Relay
Mounting Type: Ceiling
Operating Temperature: 0°C ~ 40°C
Voltage - Supply: 100/277VAC
Sensor Type: Passive Infrared
Coverage: 1500 Square Feet
Manual Override: No
Part Status: Active
товар відсутній
| OMNIIRLBP1277 |
|
товар відсутній
| 596-00247 |
|
Виробник: HellermannTyton
Description: LABEL ELECTRL WARN 6.5"X1" 50PC
Packaging: Bulk
Features: Reflective
Mounting Type: Adhesive
Length: 1.000" (25.40mm)
Shape: Rectangle
Width: 6.500" (165.10mm)
Material - Body: Vinyl
Applications: Solar
Ratings: IFC, NEC, UL
Part Status: Active
Color - Background: Red
Language: English
Application Specifics: Safety
Arrangement: Text Only
Legend (Text): Caution : Solar Circuit
Legend (Symbol Only): No Symbol
Color - Legend: White
Print Type: Pre-Printed, Printable (Thermal Transfer)
Description: LABEL ELECTRL WARN 6.5"X1" 50PC
Packaging: Bulk
Features: Reflective
Mounting Type: Adhesive
Length: 1.000" (25.40mm)
Shape: Rectangle
Width: 6.500" (165.10mm)
Material - Body: Vinyl
Applications: Solar
Ratings: IFC, NEC, UL
Part Status: Active
Color - Background: Red
Language: English
Application Specifics: Safety
Arrangement: Text Only
Legend (Text): Caution : Solar Circuit
Legend (Symbol Only): No Symbol
Color - Legend: White
Print Type: Pre-Printed, Printable (Thermal Transfer)
товар відсутній