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IXTA180N085T IXTA180N085T IXYS 791a6e06-0dda-4aec-8ac9-2b8823ce039b.pdf Description: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTA180N085T7 IXTA180N085T7 IXYS d5c4ab7f-f345-4112-b76b-0e873121d4fb.pdf Description: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTA180N10T IXTA180N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 6426 шт:
термін постачання 21-31 дні (днів)
1+396.87 грн
50+ 302.63 грн
100+ 259.4 грн
500+ 216.39 грн
1000+ 185.28 грн
2000+ 174.46 грн
IXTA180N10T7 IXTA180N10T7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta180n10t7_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
IXTA182N055T IXTA182N055T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta182n055t_datasheet.pdf.pdf Description: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTA182N055T7 IXTA182N055T7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta182n055t7_datasheet.pdf.pdf Description: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTA1N100 IXTA1N100 IXYS 98545.pdf Description: MOSFET N-CH 1000V 1.5A TO-263
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
1+300.74 грн
10+ 259.8 грн
100+ 212.85 грн
500+ 170.04 грн
IXTA1N120P IXTA1N120P IXYS IXTA1N120P%2C%20IXTP1N120P.pdf Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+338.61 грн
10+ 273.83 грн
100+ 221.5 грн
IXTA1N80 IXTA1N80 IXYS 98822.pdf Description: MOSFET N-CH 800V 750MA TO-263
товар відсутній
IXTA200N075T IXTA200N075T IXYS 0acf6981-a5f0-43ec-b89a-58e0bba5550f.pdf Description: MOSFET N-CH 75V 200A TO-263
товар відсутній
IXTA200N075T7 IXTA200N075T7 IXYS 47ba8011-4f48-4724-bd0c-11c56ccd05a3.pdf Description: MOSFET N-CH 75V 200A TO-263-7
товар відсутній
IXTA200N085T IXTA200N085T IXYS 2be09903-b768-4f84-8ae6-df43cf6caa68.pdf Description: MOSFET N-CH 85V 200A TO263
товар відсутній
IXTA200N085T7 IXTA200N085T7 IXYS ed378d3a-0b96-485f-9529-dfa41b5b85d3.pdf Description: MOSFET N-CH 85V 200A TO263-7
товар відсутній
IXTA220N055T IXTA220N055T IXYS 36d0bda2-7b03-4201-82eb-c6fc765ec550.pdf Description: MOSFET N-CH 55V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTA220N055T7 IXTA220N055T7 IXYS 93e57d76-809c-46d5-86ae-9782b056634a.pdf Description: MOSFET N-CH 55V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTA220N075T IXTA220N075T IXYS 17d09532-b3f9-4d21-b502-d3e6b248828d.pdf Description: MOSFET N-CH 75V 220A TO263
товар відсутній
IXTA220N075T7 IXTA220N075T7 IXYS 9deb9714-d6d4-4f63-b1ab-058b872d9af8.pdf Description: MOSFET N-CH 75V 220A TO263-7
товар відсутній
IXTA240N055T IXTA240N055T IXYS a7fcb664-f40a-4d97-bbc4-b53e6722c0e2.pdf Description: MOSFET N-CH 55V 240A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTA240N055T7 IXTA240N055T7 IXYS 4771bb6c-2029-43f6-9d86-e29823557227.pdf Description: MOSFET N-CH 55V 240A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTA2N80 IXTA2N80 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta2n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 2A TO263
Packaging: Box
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 500mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
IXTA2N80P IXTA2N80P IXYS DS99595F(IXTU-TY-TA-TP2N80P).pdf Description: MOSFET N-CH 800V 2A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
IXTA36N30P IXTA36N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 2060 шт:
термін постачання 21-31 дні (днів)
1+332.06 грн
50+ 253.56 грн
100+ 217.34 грн
500+ 181.3 грн
1000+ 155.24 грн
2000+ 146.18 грн
IXTA42N25P IXTA42N25P IXYS 99157.pdf Description: MOSFET N-CH 250V 42A TO-263
товар відсутній
IXTA4N80P IXTA4N80P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_4n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
IXTA50N20P IXTA50N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_50n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
1+332.06 грн
10+ 268.64 грн
100+ 217.34 грн
500+ 181.3 грн
1000+ 155.24 грн
IXTA60N10T IXTA60N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+184.96 грн
Мінімальне замовлення: 2
IXTA62N15P IXTA62N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+332.06 грн
50+ 253.56 грн
100+ 217.34 грн
IXTA70N085T IXTA70N085T IXYS 30013b86-a8ff-4da0-8ead-e9a49ad086b6.pdf Description: MOSFET N-CH 85V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
товар відсутній
IXTA75N10P IXTA75N10P IXYS 99158.pdf Description: MOSFET N-CH 100V 75A TO263
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
IXTA76N075T IXTA76N075T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp76n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
товар відсутній
IXTA80N10T7 IXTA80N10T7 IXYS 0026e1e6-217b-45bd-9ddf-a8fbb6293bc1.pdf Description: MOSFET N-CH 100V 80A TO263-7
товар відсутній
IXTA88N085T IXTA88N085T IXYS 159dd045-cdc1-443f-ac0e-2f27c155ca59.pdf Description: MOSFET N-CH 85V 88A TO-263
товар відсутній
IXTA88N085T7 IXTA88N085T7 IXYS f256316f-b4a3-4af7-af20-e4b5de68999f.pdf Description: MOSFET N-CH 85V 88A TO-263-7
товар відсутній
IXTA90N055T IXTA90N055T IXYS 27ef9d4e-a444-47b1-9284-6df0a0aa4bbd.pdf Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTA98N075T IXTA98N075T IXYS DS99541%28IXTA-IXTP98N075T%29.pdf Description: MOSFET N-CH 75V 98A TO-263
товар відсутній
IXTA98N075T7 IXTA98N075T7 IXYS Description: MOSFET N-CH 75V 98A TO-263-7
товар відсутній
IXTB30N100L IXTB30N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtb30n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 30A PLUS264
товар відсутній
IXTB62N50L IXTB62N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtb62n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+4035.65 грн
10+ 3650.92 грн
IXTC160N085T IXTC160N085T IXYS Description: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 85 V
товар відсутній
IXTC160N10T IXTC160N10T IXYS 5221213a-512c-4276-a71f-7c34ec7c3915.pdf Description: MOSFET N-CH 100V 83A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
IXTC180N055T IXTC180N055T IXYS Description: MOSFET N-CH 55V ISOPLUS220
товар відсутній
IXTC180N085T IXTC180N085T IXYS trenchMV.pdf Description: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
товар відсутній
IXTC180N10T IXTC180N10T IXYS PartDetails.aspx?r=0&pid=995 Description: MOSFET N-CH 100V 90A ISOPLUS220
товар відсутній
IXTC200N085T IXTC200N085T IXYS DS99644(IXTC200N085T).pdf Description: MOSFET N-CH 85V 110A ISOPLUS220
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
IXTC200N10T IXTC200N10T IXYS DS99653A(IXTC200N10T).pdf Description: MOSFET N-CH 100V 101A ISOPLUS220
товар відсутній
IXTC220N055T IXTC220N055T IXYS e52c8c2a-4e23-4456-8fec-31e2e3847415.pdf Description: MOSFET N-CH 55V 130A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTC220N075T IXTC220N075T IXYS 773b3ebd-4dd6-4bf5-b04d-f5d73b5e96ce.pdf Description: MOSFET N-CH 75V 115A ISOPLUS220
товар відсутній
IXTC230N085T IXTC230N085T IXYS PartDetails.aspx?r=0&pid=969 Description: MOSFET N-CH 85V 120A ISOPLUS220
товар відсутній
IXTC240N055T IXTC240N055T IXYS 3b58c1be-62ce-4652-9c59-a165460f1183.pdf Description: MOSFET N-CH 55V 132A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTC250N075T IXTC250N075T IXYS DS99655(IXTC250N075T).pdf Description: MOSFET N-CH 75V 128A ISOPLUS220
товар відсутній
IXTC280N055T IXTC280N055T IXYS 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf Description: MOSFET N-CH 55V 145A ISOPLUS220
товар відсутній
IXTF200N10T IXTF200N10T IXYS DS99747B(IXTF200N10T).pdf Description: MOSFET N-CH 100V 90A I4-PAC-5
товар відсутній
IXTF230N085T IXTF230N085T IXYS 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf Description: MOSFET N-CH 85V 130A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
товар відсутній
IXTF250N075T IXTF250N075T IXYS 702d44c8-7e6c-49a6-b759-7629d0594a57.pdf Description: MOSFET N-CH 75V 140A I4PAC
товар відсутній
IXTF280N055T IXTF280N055T IXYS 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf Description: MOSFET N-CH 55V 160A I4PAC
товар відсутній
IXTH10N100D IXTH10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO247
товар відсутній
IXTH12N100L IXTH12N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+1457.84 грн
30+ 1163.8 грн
120+ 1091.06 грн
IXTH12N120 IXTH12N120 IXYS IXTH12N100.pdf Description: MOSFET N-CH 1200V 12A TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товар відсутній
IXTH130N10T IXTH130N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_2of2_datasheet.pdf.pdf Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
1+415.07 грн
30+ 319.13 грн
120+ 285.54 грн
510+ 236.44 грн
IXTH152N085T IXTH152N085T IXYS ad7328b7-b465-4219-9279-de781003c923.pdf Description: MOSFET N-CH 85V 152A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTA180N085T 791a6e06-0dda-4aec-8ac9-2b8823ce039b.pdf
IXTA180N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTA180N085T7 d5c4ab7f-f345-4112-b76b-0e873121d4fb.pdf
IXTA180N085T7
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTA180N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf
IXTA180N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 6426 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+396.87 грн
50+ 302.63 грн
100+ 259.4 грн
500+ 216.39 грн
1000+ 185.28 грн
2000+ 174.46 грн
IXTA180N10T7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta180n10t7_datasheet.pdf.pdf
IXTA180N10T7
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товар відсутній
IXTA182N055T littelfuse_discrete_mosfets_n-channel_trench_gate_ixta182n055t_datasheet.pdf.pdf
IXTA182N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTA182N055T7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta182n055t7_datasheet.pdf.pdf
IXTA182N055T7
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTA1N100 98545.pdf
IXTA1N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.5A TO-263
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+300.74 грн
10+ 259.8 грн
100+ 212.85 грн
500+ 170.04 грн
IXTA1N120P IXTA1N120P%2C%20IXTP1N120P.pdf
IXTA1N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+338.61 грн
10+ 273.83 грн
100+ 221.5 грн
IXTA1N80 98822.pdf
IXTA1N80
Виробник: IXYS
Description: MOSFET N-CH 800V 750MA TO-263
товар відсутній
IXTA200N075T 0acf6981-a5f0-43ec-b89a-58e0bba5550f.pdf
IXTA200N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 200A TO-263
товар відсутній
IXTA200N075T7 47ba8011-4f48-4724-bd0c-11c56ccd05a3.pdf
IXTA200N075T7
Виробник: IXYS
Description: MOSFET N-CH 75V 200A TO-263-7
товар відсутній
IXTA200N085T 2be09903-b768-4f84-8ae6-df43cf6caa68.pdf
IXTA200N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 200A TO263
товар відсутній
IXTA200N085T7 ed378d3a-0b96-485f-9529-dfa41b5b85d3.pdf
IXTA200N085T7
Виробник: IXYS
Description: MOSFET N-CH 85V 200A TO263-7
товар відсутній
IXTA220N055T 36d0bda2-7b03-4201-82eb-c6fc765ec550.pdf
IXTA220N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTA220N055T7 93e57d76-809c-46d5-86ae-9782b056634a.pdf
IXTA220N055T7
Виробник: IXYS
Description: MOSFET N-CH 55V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTA220N075T 17d09532-b3f9-4d21-b502-d3e6b248828d.pdf
IXTA220N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 220A TO263
товар відсутній
IXTA220N075T7 9deb9714-d6d4-4f63-b1ab-058b872d9af8.pdf
IXTA220N075T7
Виробник: IXYS
Description: MOSFET N-CH 75V 220A TO263-7
товар відсутній
IXTA240N055T a7fcb664-f40a-4d97-bbc4-b53e6722c0e2.pdf
IXTA240N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 240A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTA240N055T7 4771bb6c-2029-43f6-9d86-e29823557227.pdf
IXTA240N055T7
Виробник: IXYS
Description: MOSFET N-CH 55V 240A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTA2N80 littelfuse_discrete_mosfets_n-channel_standard_ixta2n80_datasheet.pdf.pdf
IXTA2N80
Виробник: IXYS
Description: MOSFET N-CH 800V 2A TO263
Packaging: Box
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 500mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
IXTA2N80P DS99595F(IXTU-TY-TA-TP2N80P).pdf
IXTA2N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 2A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
IXTA36N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf
IXTA36N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 2060 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+332.06 грн
50+ 253.56 грн
100+ 217.34 грн
500+ 181.3 грн
1000+ 155.24 грн
2000+ 146.18 грн
IXTA42N25P 99157.pdf
IXTA42N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 42A TO-263
товар відсутній
IXTA4N80P littelfuse_discrete_mosfets_n-channel_standard_ixt_4n80p_datasheet.pdf.pdf
IXTA4N80P
Виробник: IXYS
Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
IXTA50N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_50n20p_datasheet.pdf.pdf
IXTA50N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+332.06 грн
10+ 268.64 грн
100+ 217.34 грн
500+ 181.3 грн
1000+ 155.24 грн
IXTA60N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n10t_datasheet.pdf.pdf
IXTA60N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+184.96 грн
Мінімальне замовлення: 2
IXTA62N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf
IXTA62N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+332.06 грн
50+ 253.56 грн
100+ 217.34 грн
IXTA70N085T 30013b86-a8ff-4da0-8ead-e9a49ad086b6.pdf
IXTA70N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
товар відсутній
IXTA75N10P 99158.pdf
IXTA75N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO263
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
IXTA76N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp76n075t_datasheet.pdf.pdf
IXTA76N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
товар відсутній
IXTA80N10T7 0026e1e6-217b-45bd-9ddf-a8fbb6293bc1.pdf
IXTA80N10T7
Виробник: IXYS
Description: MOSFET N-CH 100V 80A TO263-7
товар відсутній
IXTA88N085T 159dd045-cdc1-443f-ac0e-2f27c155ca59.pdf
IXTA88N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 88A TO-263
товар відсутній
IXTA88N085T7 f256316f-b4a3-4af7-af20-e4b5de68999f.pdf
IXTA88N085T7
Виробник: IXYS
Description: MOSFET N-CH 85V 88A TO-263-7
товар відсутній
IXTA90N055T 27ef9d4e-a444-47b1-9284-6df0a0aa4bbd.pdf
IXTA90N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTA98N075T DS99541%28IXTA-IXTP98N075T%29.pdf
IXTA98N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 98A TO-263
товар відсутній
IXTA98N075T7
IXTA98N075T7
Виробник: IXYS
Description: MOSFET N-CH 75V 98A TO-263-7
товар відсутній
IXTB30N100L littelfuse_discrete_mosfets_n-channel_linear_ixtb30n100l_datasheet.pdf.pdf
IXTB30N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A PLUS264
товар відсутній
IXTB62N50L littelfuse_discrete_mosfets_n-channel_linear_ixtb62n50l_datasheet.pdf.pdf
IXTB62N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4035.65 грн
10+ 3650.92 грн
IXTC160N085T
IXTC160N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 85 V
товар відсутній
IXTC160N10T 5221213a-512c-4276-a71f-7c34ec7c3915.pdf
IXTC160N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 83A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
IXTC180N055T
IXTC180N055T
Виробник: IXYS
Description: MOSFET N-CH 55V ISOPLUS220
товар відсутній
IXTC180N085T trenchMV.pdf
IXTC180N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
товар відсутній
IXTC180N10T PartDetails.aspx?r=0&pid=995
IXTC180N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 90A ISOPLUS220
товар відсутній
IXTC200N085T DS99644(IXTC200N085T).pdf
IXTC200N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
IXTC200N10T DS99653A(IXTC200N10T).pdf
IXTC200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 101A ISOPLUS220
товар відсутній
IXTC220N055T e52c8c2a-4e23-4456-8fec-31e2e3847415.pdf
IXTC220N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 130A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTC220N075T 773b3ebd-4dd6-4bf5-b04d-f5d73b5e96ce.pdf
IXTC220N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 115A ISOPLUS220
товар відсутній
IXTC230N085T PartDetails.aspx?r=0&pid=969
IXTC230N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 120A ISOPLUS220
товар відсутній
IXTC240N055T 3b58c1be-62ce-4652-9c59-a165460f1183.pdf
IXTC240N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 132A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTC250N075T DS99655(IXTC250N075T).pdf
IXTC250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 128A ISOPLUS220
товар відсутній
IXTC280N055T 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf
IXTC280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 145A ISOPLUS220
товар відсутній
IXTF200N10T DS99747B(IXTF200N10T).pdf
IXTF200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 90A I4-PAC-5
товар відсутній
IXTF230N085T 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf
IXTF230N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 130A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
товар відсутній
IXTF250N075T 702d44c8-7e6c-49a6-b759-7629d0594a57.pdf
IXTF250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 140A I4PAC
товар відсутній
IXTF280N055T 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf
IXTF280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 160A I4PAC
товар відсутній
IXTH10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTH10N100D
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247
товар відсутній
IXTH12N100L littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf
IXTH12N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1457.84 грн
30+ 1163.8 грн
120+ 1091.06 грн
IXTH12N120 IXTH12N100.pdf
IXTH12N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товар відсутній
IXTH130N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_2of2_datasheet.pdf.pdf
IXTH130N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+415.07 грн
30+ 319.13 грн
120+ 285.54 грн
510+ 236.44 грн
IXTH152N085T ad7328b7-b465-4219-9279-de781003c923.pdf
IXTH152N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 152A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
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