| Фото | Назва | Виробник | Інформація |
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IXJ611S1 | IXYS | Description: IC DRIVER HALF BRIDGE GATE 8SOIC |
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IXJ611S1T/R | IXYS | Description: IC DRIVER HALF BRIDGE GATE 8SOIC |
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IXK611P1 | IXYS | Description: IC DRIVER HALF BRIDGE GATE 8DIP |
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IXK611S1 | IXYS | Description: IC DRIVER HALF BRIDGE GATE 8SOIC |
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IXK611S1T/R | IXYS | Description: IC DRIVER HALF BRIDGE GATE 8SOIC |
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IXKC13N80C | IXYS |
 Description: MOSFET N-CH 800V 13A ISOPLUS220Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
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IXKC25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V |
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IXKC40N60C | IXYS |
 Description: MOSFET N-CH 600V 28A ISOPLUS220 |
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| IXKF40N60SCD1 | IXYS |
Description: MOSFET N-CH 600V 41A I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: ISOPLUS i4-PAC™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
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| IXKG25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISO264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V |
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.jpg "IXKH47N60C") |
IXKH47N60C | IXYS |
Description: MOSFET N-CH 600V 47A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V |
на замовлення 1110 шт: термін постачання 21-31 дні (днів) |
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IXKK85N60C | IXYS |
Description: MOSFET N-CH 600V 85A TO264A Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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IXKN40N60C | IXYS |
Description: MOSFET N-CH 600V 40A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
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IXKN45N80C | IXYS |
Description: MOSFET N-CH 800V 44A SOT-227B |
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IXKN75N60C | IXYS |
Description: MOSFET N-CH 600V 75A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V |
на замовлення 491 шт: термін постачання 21-31 дні (днів) |
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IXKR25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V |
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IXKR40N60C | IXYS |
Description: MOSFET N-CH 600V 38A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
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IXRP15N120 | IXYS |
Description: IGBT 1200V 25A 300W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: NPT Switching Energy: 1.1mJ (on), 130µJ (off) Test Condition: 600V, 10A, 47Ohm, 15V Gate Charge: 36 nC Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 300 W |
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| IXS839AQ2 | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
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| IXS839AQ2T/R | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
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| IXS839BQ2 | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
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| IXS839BQ2T/R | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
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IXS839S1 | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 8SOIC |
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IXS839S1T/R | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 8SOIC |
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IXSA15N120B | IXYS |
Description: IGBT 1200V 30A 150W TO263AA Packaging: Box Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXSH15N120B | IXYS |
Description: IGBT 1200V 30A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXSH15N120BD1 | IXYS |
Description: IGBT 1200V 30A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXSH30N60BD1 | IXYS |
Description: IGBT 600V 55A 200W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
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IXSH35N120B | IXYS |
Description: IGBT 1200V 70A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
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IXSH35N140A | IXYS |
Description: IGBT 1400V 70A 300W TO247 |
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IXSH40N60B | IXYS |
Description: IGBT 600V 75A 280W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
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IXSH45N100 | IXYS |
Description: IGBT 1000V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 80ns/400ns Switching Energy: 15mJ (off) Test Condition: 800V, 45A, 2.7Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXSH45N120 | IXYS |
Description: IGBT 1200V 75A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 80ns/400ns Switching Energy: 21mJ (off) Test Condition: 960V, 45A, 2.7Ohm, 15V Gate Charge: 150 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXSH45N120B | IXYS |
Description: IGBT 1200V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 36ns/360ns Switching Energy: 13mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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IXSH50N60B | IXYS |
Description: IGBT 600V 75A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 70ns/150ns Switching Energy: 3.3mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 167 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
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IXSK35N120BD1 | IXYS |
Description: IGBT 1200V 70A 300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-264AA (IXSK) IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
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IXSK40N60BD1 | IXYS |
Description: IGBT 600V 75A 280W TO264 |
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IXSK40N60CD1 | IXYS |
Description: IGBT 600V 75A 280W TO264 |
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IXSK80N60B | IXYS |
Description: IGBT 600V 160A 500W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A Supplier Device Package: TO-264AA (IXSK) IGBT Type: PT Td (on/off) @ 25°C: 60ns/140ns Switching Energy: 4.2mJ (off) Test Condition: 480V, 80A, 2.7Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXSN55N120A | IXYS |
Description: IGBT MOD 1200V 110A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 8 nF @ 25 V |
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IXSN80N60BD1 | IXYS |
Description: IGBT MOD 600V 160A 420W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 420 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V |
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IXSP15N120B | IXYS |
Description: IGBT 1200V 30A 150W TO220AB Packaging: Box Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXSR35N120BD1 | IXYS |
Description: IGBT 1200V 70A 250W ISOPLUS247 Packaging: Box Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 2.7Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 250 W |
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IXSR40N60BD1 | IXYS |
Description: IGBT 600V 70A 170W ISOPLUS247 |
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IXSR40N60CD1 | IXYS |
Description: IGBT 600V 62A 210W ISOPLUS247 |
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IXST15N120B | IXYS |
Description: IGBT PT 1200V 30A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXST15N120BD1 | IXYS |
Description: IGBT PT 1200V 30A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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IXST24N60BD1 | IXYS |
Description: IGBT 600V 48A TO268AA Packaging: Box Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 1.3mJ (off) Test Condition: 480V, 24A, 33Ohm, 15V Gate Charge: 41 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W |
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IXST30N60BD1 | IXYS |
Description: IGBT 600V 55A 200W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
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IXST30N60C | IXYS |
Description: IGBT 600V 55A 200W TO268 |
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IXST30N60CD1 | IXYS |
Description: IGBT 600V 55A 200W TO268 |
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IXST35N120B | IXYS |
Description: IGBT 1200V 70A 300W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
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IXST40N60B | IXYS |
Description: IGBT 600V 75A 280W TO268 |
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IXST45N120B | IXYS |
Description: IGBT PT 1200V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 36ns/360ns Switching Energy: 13mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
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.jpg "IXSX35N120BD1") |
IXSX35N120BD1 | IXYS |
Description: IGBT 1200V 70A 300W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
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IXSX40N60BD1 | IXYS |
Description: IGBT 600V 75A 280W PLUS247 |
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IXSX40N60CD1 | IXYS |
Description: IGBT 600V 75A 280W PLUS247 |
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IXSX80N60B | IXYS |
Description: IGBT 600V 160A 500W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 60ns/140ns Switching Energy: 4.2mJ (off) Test Condition: 480V, 80A, 2.7Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
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IXTA05N100 | IXYS |
Description: MOSFET N-CH 1000V 750MA TO263 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IXTA06N120P | IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
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| IXKC13N80C |
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Виробник: IXYS
Description: MOSFET N-CH 800V 13A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 800V 13A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
товар відсутній
| IXKC25N80C |
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Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Description: MOSFET N-CH 800V 25A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
товар відсутній
| IXKF40N60SCD1 |
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Виробник: IXYS
Description: MOSFET N-CH 600V 41A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 41A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
| IXKG25N80C |
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Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISO264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Description: MOSFET N-CH 800V 25A ISO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISO264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
товар відсутній
| IXKH47N60C |
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Виробник: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1647.63 грн |
| 10+ | 1409.96 грн |
| 100+ | 1233.2 грн |
| 500+ | 987.57 грн |
| IXKK85N60C |
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Виробник: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3152.27 грн |
| 25+ | 2543.58 грн |
| 100+ | 2374 грн |
| IXKN40N60C |
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Виробник: IXYS
Description: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
| IXKN75N60C |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
на замовлення 491 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4531.88 грн |
| 10+ | 3954.83 грн |
| 100+ | 3545.75 грн |
| IXKR25N80C |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
товар відсутній
| IXKR40N60C |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
товар відсутній
| IXRP15N120 |
|
Виробник: IXYS
Description: IGBT 1200V 25A 300W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Switching Energy: 1.1mJ (on), 130µJ (off)
Test Condition: 600V, 10A, 47Ohm, 15V
Gate Charge: 36 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Description: IGBT 1200V 25A 300W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Switching Energy: 1.1mJ (on), 130µJ (off)
Test Condition: 600V, 10A, 47Ohm, 15V
Gate Charge: 36 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
товар відсутній
| IXSA15N120B |
Виробник: IXYS
Description: IGBT 1200V 30A 150W TO263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT 1200V 30A 150W TO263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXSH15N120B |
Виробник: IXYS
Description: IGBT 1200V 30A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT 1200V 30A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXSH15N120BD1 |
Виробник: IXYS
Description: IGBT 1200V 30A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT 1200V 30A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXSH30N60BD1 |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
| IXSH35N120B |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
| IXSH40N60B |
|
Виробник: IXYS
Description: IGBT 600V 75A 280W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT 600V 75A 280W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
товар відсутній
| IXSH45N100 |
|
Виробник: IXYS
Description: IGBT 1000V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 15mJ (off)
Test Condition: 800V, 45A, 2.7Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1000V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 15mJ (off)
Test Condition: 800V, 45A, 2.7Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
| IXSH45N120 |
|
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 21mJ (off)
Test Condition: 960V, 45A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1200V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 21mJ (off)
Test Condition: 960V, 45A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
| IXSH45N120B |
|
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
| IXSH50N60B |
|
Виробник: IXYS
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/150ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/150ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
| IXSK35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
| IXSK80N60B |
|
Виробник: IXYS
Description: IGBT 600V 160A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 160A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXSN55N120A |
|
Виробник: IXYS
Description: IGBT MOD 1200V 110A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
Description: IGBT MOD 1200V 110A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
товар відсутній
| IXSN80N60BD1 |
|
Виробник: IXYS
Description: IGBT MOD 600V 160A 420W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Description: IGBT MOD 600V 160A 420W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
| IXSP15N120B |
Виробник: IXYS
Description: IGBT 1200V 30A 150W TO220AB
Packaging: Box
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT 1200V 30A 150W TO220AB
Packaging: Box
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXSR35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 250W ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Description: IGBT 1200V 70A 250W ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
товар відсутній
| IXST15N120B |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXST15N120BD1 |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
| IXST24N60BD1 |
|
Виробник: IXYS
Description: IGBT 600V 48A TO268AA
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 24A, 33Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Description: IGBT 600V 48A TO268AA
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 24A, 33Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
| IXST30N60BD1 |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
| IXST35N120B |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
| IXST45N120B |
|
Виробник: IXYS
Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT PT 1200V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
| IXSX35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
| IXSX80N60B |
|
Виробник: IXYS
Description: IGBT 600V 160A 500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 160A 500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
| IXTA05N100 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Description: MOSFET N-CH 1000V 750MA TO263
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 292.54 грн |
| IXTA06N120P |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 296.04 грн |
| 50+ | 225.99 грн |
| 100+ | 193.71 грн |