Продукція > IXYS > Всі товари виробника IXYS (20193) > Сторінка 30 з 337

Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 26 27 28 29 30 31 32 33 34 35 66 99 132 165 198 231 264 297 330 337  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IXTC240N055T IXTC240N055T IXYS 3b58c1be-62ce-4652-9c59-a165460f1183.pdf Description: MOSFET N-CH 55V 132A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTC250N075T IXTC250N075T IXYS DS99655(IXTC250N075T).pdf Description: MOSFET N-CH 75V 128A ISOPLUS220
товар відсутній
IXTC280N055T IXTC280N055T IXYS 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf Description: MOSFET N-CH 55V 145A ISOPLUS220
товар відсутній
IXTF200N10T IXTF200N10T IXYS DS99747B(IXTF200N10T).pdf Description: MOSFET N-CH 100V 90A I4-PAC-5
товар відсутній
IXTF230N085T IXTF230N085T IXYS 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf Description: MOSFET N-CH 85V 130A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
товар відсутній
IXTF250N075T IXTF250N075T IXYS 702d44c8-7e6c-49a6-b759-7629d0594a57.pdf Description: MOSFET N-CH 75V 140A I4PAC
товар відсутній
IXTF280N055T IXTF280N055T IXYS 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf Description: MOSFET N-CH 55V 160A I4PAC
товар відсутній
IXTH10N100D IXTH10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO247
товар відсутній
IXTH12N100L IXTH12N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+1438.53 грн
30+ 1148.38 грн
120+ 1076.61 грн
IXTH12N120 IXTH12N120 IXYS IXTH12N100.pdf Description: MOSFET N-CH 1200V 12A TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товар відсутній
IXTH130N10T IXTH130N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_2of2_datasheet.pdf.pdf Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
1+409.57 грн
30+ 314.9 грн
120+ 281.76 грн
510+ 233.31 грн
IXTH152N085T IXTH152N085T IXYS ad7328b7-b465-4219-9279-de781003c923.pdf Description: MOSFET N-CH 85V 152A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTH160N075T IXTH160N075T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
товар відсутній
IXTH160N10T IXTH160N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
IXTH16P20 IXTH16P20 IXYS 98906.pdf Description: MOSFET P-CH 200V 16A TO-247
товар відсутній
IXTH180N085T IXTH180N085T IXYS 117df8ec-db73-4b77-a16a-478520b75c7a.pdf Description: MOSFET N-CH 85V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTH180N10T IXTH180N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq180n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
1+474.96 грн
30+ 365.11 грн
120+ 326.68 грн
510+ 270.51 грн
1020+ 243.46 грн
IXTH182N055T IXTH182N055T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq182n055t_datasheet.pdf.pdf Description: MOSFET N-CH 55V 182A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTH200N075T IXTH200N075T IXYS 36401d5f-7628-416f-aae8-0f64c28a1a4a.pdf Description: MOSFET N-CH 75V 200A TO-247
товар відсутній
IXTH200N085T IXTH200N085T IXYS 7e3c037c-de2d-42f0-9652-a1260b6dfbd7.pdf Description: MOSFET N-CH 85V 200A TO247
товар відсутній
IXTH200N10T IXTH200N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_200n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
1+593.52 грн
10+ 489.68 грн
100+ 408.02 грн
IXTH20N50D IXTH20N50D IXYS 99192.pdf Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTH220N055T IXTH220N055T IXYS 161c1af2-a811-48d6-a53d-052a50bed563.pdf Description: MOSFET N-CH 55V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTH220N075T IXTH220N075T IXYS 857a2fbd-3500-472e-ad94-24b8b403166e.pdf Description: MOSFET N-CH 75V 220A TO247
товар відсутній
IXTH22N50P IXTH22N50P IXYS media?resourcetype=datasheets&itemid=39887b02-dd05-409b-a377-79ee2691c4f1&filename=littelfuse-discrete-mosfets-n-channel-standard-ixt-22n50p-datasheet Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
на замовлення 11370 шт:
термін постачання 21-31 дні (днів)
1+437.6 грн
30+ 333.49 грн
120+ 285.85 грн
510+ 238.46 грн
1020+ 204.18 грн
2010+ 192.26 грн
IXTH230N085T IXTH230N085T IXYS 656b52d9-cdd4-4219-a307-549c63aa7915.pdf Description: MOSFET N-CH 85V 230A TO247
товар відсутній
IXTH240N055T IXTH240N055T IXYS 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf Description: MOSFET N-CH 55V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTH250N075T IXTH250N075T IXYS 96d2aac2-1508-499a-bb1e-23f5071b2d02.pdf Description: MOSFET N-CH 75V 250A TO247
товар відсутній
IXTH280N055T IXTH280N055T IXYS DS99630A(IXTH-TQ280N055T).pdf Description: MOSFET N-CH 55V 280A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
товар відсутній
IXTH36P10 IXTH36P10 IXYS 98908.pdf Description: MOSFET P-CH 100V 36A TO-247
товар відсутній
IXTH3N120 IXTH3N120 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta3n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+379.25 грн
Мінімальне замовлення: 300
IXTH50P10 IXTH50P10 IXYS littelfuse_discrete_mosfets_p-channel_ixt_50p10_datasheet.pdf.pdf Description: MOSFET P-CH 100V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
1+533.16 грн
30+ 409.9 грн
120+ 379.82 грн
IXTH6N120 IXTH6N120 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO247
товар відсутній
IXTH88N15 IXTH88N15 IXYS 99034.pdf Description: MOSFET N-CH 150V 88A TO-247AD
товар відсутній
IXTH88N30P IXTH88N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTH96N20P IXTH96N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTK100N25P IXTK100N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+854.35 грн
IXTK102N30P IXTK102N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtk102n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
1+1036.87 грн
25+ 808.21 грн
IXTK120N20P IXTK120N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_120n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
IXTK120N25P IXTK120N25P IXYS 99175.pdf Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
1+1011.72 грн
25+ 788.97 грн
100+ 742.56 грн
IXTK140N20P IXTK140N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtk140n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTK170N10P IXTK170N10P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_170n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
300+570.68 грн
Мінімальне замовлення: 300
IXTK17N120L IXTK17N120L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_17n120l_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 17A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
1+2930.96 грн
10+ 2515.05 грн
100+ 2207.56 грн
IXTK180N15P IXTK180N15P IXYS 99297.pdf Description: MOSFET N-CH 150V 180A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
1+1049.8 грн
25+ 818.34 грн
100+ 770.21 грн
IXTK200N10P IXTK200N10P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtk200n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1022.49 грн
25+ 797.08 грн
100+ 750.2 грн
IXTK22N100L IXTK22N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
на замовлення 604 шт:
термін постачання 21-31 дні (днів)
1+2981.26 грн
25+ 2405.42 грн
100+ 2245.07 грн
IXTK250N10 IXTK250N10 IXYS 99022.pdf Description: MOSFET N-CH 100V 250A TO264
Packaging: Box
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
товар відсутній
IXTK82N25P IXTK82N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 82A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
1+672.56 грн
25+ 516.79 грн
IXTK88N30P IXTK88N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTL2x180N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtl2x180n10t_datasheet.pdf.pdf Description: MOSFET 2N-CH 100V 100A I5-PAK
товар відсутній
IXTL2X200N085T IXYS bf6c0cec-e8a4-4fae-a69e-5a7e22358774.pdf Description: MOSFET 2N-CH 85V 112A I5-PAK
товар відсутній
IXTL2X220N075T IXYS faa4a6f2-7358-4a36-87ac-ad543842e93c.pdf Description: MOSFET 2N-CH 75V 120A I5-PAK
товар відсутній
IXTL2X240N055T IXTL2X240N055T IXYS 3d3b8842-e687-439c-a24b-48eb9c599bd9.pdf Description: MOSFET 2N-CH 55V 140A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 140A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Obsolete
товар відсутній
IXTN17N120L IXTN17N120L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn17n120l_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 15A SOT-227B
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+4050.46 грн
10+ 3663.45 грн
IXTN22N100L IXTN22N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn22n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
товар відсутній
IXTN46N50L IXTN46N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn46n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 46A SOT-227B
товар відсутній
IXTN62N50L IXTN62N50L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn62n50l_datasheet.pdf.pdf Description: MOSFET N-CH 500V 62A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
товар відсутній
IXTP02N50D IXTP02N50D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf Description: MOSFET N-CH 500V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 7935 шт:
термін постачання 21-31 дні (днів)
1+497.24 грн
10+ 429.97 грн
100+ 352.29 грн
500+ 281.44 грн
1000+ 237.36 грн
2000+ 225.49 грн
IXTP05N100 IXTP05N100 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta05n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
2+187.54 грн
50+ 143.27 грн
100+ 122.8 грн
Мінімальне замовлення: 2
IXTP06N120P IXTP06N120P IXYS IXTP06N120P,IXTA06N120P.pdf Description: MOSFET N-CH 1200V 600MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+314.01 грн
50+ 239.66 грн
IXTC240N055T 3b58c1be-62ce-4652-9c59-a165460f1183.pdf
IXTC240N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 132A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTC250N075T DS99655(IXTC250N075T).pdf
IXTC250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 128A ISOPLUS220
товар відсутній
IXTC280N055T 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf
IXTC280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 145A ISOPLUS220
товар відсутній
IXTF200N10T DS99747B(IXTF200N10T).pdf
IXTF200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 90A I4-PAC-5
товар відсутній
IXTF230N085T 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf
IXTF230N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 130A I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
товар відсутній
IXTF250N075T 702d44c8-7e6c-49a6-b759-7629d0594a57.pdf
IXTF250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 140A I4PAC
товар відсутній
IXTF280N055T 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf
IXTF280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 160A I4PAC
товар відсутній
IXTH10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTH10N100D
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO247
товар відсутній
IXTH12N100L littelfuse_discrete_mosfets_n-channel_linear_ixth12n100l_datasheet.pdf.pdf
IXTH12N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1438.53 грн
30+ 1148.38 грн
120+ 1076.61 грн
IXTH12N120 IXTH12N100.pdf
IXTH12N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товар відсутній
IXTH130N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n10t_2of2_datasheet.pdf.pdf
IXTH130N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+409.57 грн
30+ 314.9 грн
120+ 281.76 грн
510+ 233.31 грн
IXTH152N085T ad7328b7-b465-4219-9279-de781003c923.pdf
IXTH152N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 152A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товар відсутній
IXTH160N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n075t_datasheet.pdf.pdf
IXTH160N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
товар відсутній
IXTH160N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n10t_datasheet.pdf.pdf
IXTH160N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товар відсутній
IXTH16P20 98906.pdf
IXTH16P20
Виробник: IXYS
Description: MOSFET P-CH 200V 16A TO-247
товар відсутній
IXTH180N085T 117df8ec-db73-4b77-a16a-478520b75c7a.pdf
IXTH180N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTH180N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq180n10t_datasheet.pdf.pdf
IXTH180N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+474.96 грн
30+ 365.11 грн
120+ 326.68 грн
510+ 270.51 грн
1020+ 243.46 грн
IXTH182N055T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq182n055t_datasheet.pdf.pdf
IXTH182N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
IXTH200N075T 36401d5f-7628-416f-aae8-0f64c28a1a4a.pdf
IXTH200N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 200A TO-247
товар відсутній
IXTH200N085T 7e3c037c-de2d-42f0-9652-a1260b6dfbd7.pdf
IXTH200N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 200A TO247
товар відсутній
IXTH200N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_200n10t_datasheet.pdf.pdf
IXTH200N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+593.52 грн
10+ 489.68 грн
100+ 408.02 грн
IXTH20N50D 99192.pdf
IXTH20N50D
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTH220N055T 161c1af2-a811-48d6-a53d-052a50bed563.pdf
IXTH220N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXTH220N075T 857a2fbd-3500-472e-ad94-24b8b403166e.pdf
IXTH220N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 220A TO247
товар відсутній
IXTH22N50P media?resourcetype=datasheets&itemid=39887b02-dd05-409b-a377-79ee2691c4f1&filename=littelfuse-discrete-mosfets-n-channel-standard-ixt-22n50p-datasheet
IXTH22N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
на замовлення 11370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+437.6 грн
30+ 333.49 грн
120+ 285.85 грн
510+ 238.46 грн
1020+ 204.18 грн
2010+ 192.26 грн
IXTH230N085T 656b52d9-cdd4-4219-a307-549c63aa7915.pdf
IXTH230N085T
Виробник: IXYS
Description: MOSFET N-CH 85V 230A TO247
товар відсутній
IXTH240N055T 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf
IXTH240N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 240A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
товар відсутній
IXTH250N075T 96d2aac2-1508-499a-bb1e-23f5071b2d02.pdf
IXTH250N075T
Виробник: IXYS
Description: MOSFET N-CH 75V 250A TO247
товар відсутній
IXTH280N055T DS99630A(IXTH-TQ280N055T).pdf
IXTH280N055T
Виробник: IXYS
Description: MOSFET N-CH 55V 280A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
товар відсутній
IXTH36P10 98908.pdf
IXTH36P10
Виробник: IXYS
Description: MOSFET P-CH 100V 36A TO-247
товар відсутній
IXTH3N120 littelfuse_discrete_mosfets_n-channel_standard_ixta3n120_datasheet.pdf.pdf
IXTH3N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+379.25 грн
Мінімальне замовлення: 300
IXTH50P10 littelfuse_discrete_mosfets_p-channel_ixt_50p10_datasheet.pdf.pdf
IXTH50P10
Виробник: IXYS
Description: MOSFET P-CH 100V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+533.16 грн
30+ 409.9 грн
120+ 379.82 грн
IXTH6N120 littelfuse_discrete_mosfets_n-channel_standard_ixt_6n120_datasheet.pdf.pdf
IXTH6N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO247
товар відсутній
IXTH88N15 99034.pdf
IXTH88N15
Виробник: IXYS
Description: MOSFET N-CH 150V 88A TO-247AD
товар відсутній
IXTH88N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf
IXTH88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTH96N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf
IXTH96N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 96A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXTK100N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_100n25p_datasheet.pdf.pdf
IXTK100N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+854.35 грн
IXTK102N30P littelfuse_discrete_mosfets_n-channel_standard_ixtk102n30p_datasheet.pdf.pdf
IXTK102N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1036.87 грн
25+ 808.21 грн
IXTK120N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_120n20p_datasheet.pdf.pdf
IXTK120N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
IXTK120N25P 99175.pdf
IXTK120N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1011.72 грн
25+ 788.97 грн
100+ 742.56 грн
IXTK140N20P littelfuse_discrete_mosfets_n-channel_standard_ixtk140n20p_datasheet.pdf.pdf
IXTK140N20P
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXTK170N10P littelfuse_discrete_mosfets_n-channel_standard_ixt_170n10p_datasheet.pdf.pdf
IXTK170N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+570.68 грн
Мінімальне замовлення: 300
IXTK17N120L littelfuse_discrete_mosfets_n-channel_linear_ixt_17n120l_datasheet.pdf.pdf
IXTK17N120L
Виробник: IXYS
Description: MOSFET N-CH 1200V 17A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2930.96 грн
10+ 2515.05 грн
100+ 2207.56 грн
IXTK180N15P 99297.pdf
IXTK180N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 180A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 90A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1049.8 грн
25+ 818.34 грн
100+ 770.21 грн
IXTK200N10P littelfuse_discrete_mosfets_n-channel_standard_ixtk200n10p_datasheet.pdf.pdf
IXTK200N10P
Виробник: IXYS
Description: MOSFET N-CH 100V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1022.49 грн
25+ 797.08 грн
100+ 750.2 грн
IXTK22N100L littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf
IXTK22N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 22A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
на замовлення 604 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2981.26 грн
25+ 2405.42 грн
100+ 2245.07 грн
IXTK250N10 99022.pdf
IXTK250N10
Виробник: IXYS
Description: MOSFET N-CH 100V 250A TO264
Packaging: Box
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
товар відсутній
IXTK82N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_82n25p_datasheet.pdf.pdf
IXTK82N25P
Виробник: IXYS
Description: MOSFET N-CH 250V 82A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+672.56 грн
25+ 516.79 грн
IXTK88N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_88n30p_datasheet.pdf.pdf
IXTK88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTL2x180N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtl2x180n10t_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 100V 100A I5-PAK
товар відсутній
IXTL2X200N085T bf6c0cec-e8a4-4fae-a69e-5a7e22358774.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 85V 112A I5-PAK
товар відсутній
IXTL2X220N075T faa4a6f2-7358-4a36-87ac-ad543842e93c.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 75V 120A I5-PAK
товар відсутній
IXTL2X240N055T 3d3b8842-e687-439c-a24b-48eb9c599bd9.pdf
IXTL2X240N055T
Виробник: IXYS
Description: MOSFET 2N-CH 55V 140A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 140A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Part Status: Obsolete
товар відсутній
IXTN17N120L littelfuse_discrete_mosfets_n-channel_linear_ixtn17n120l_datasheet.pdf.pdf
IXTN17N120L
Виробник: IXYS
Description: MOSFET N-CH 1200V 15A SOT-227B
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4050.46 грн
10+ 3663.45 грн
IXTN22N100L littelfuse_discrete_mosfets_n-channel_linear_ixtn22n100l_datasheet.pdf.pdf
IXTN22N100L
Виробник: IXYS
Description: MOSFET N-CH 1000V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
товар відсутній
IXTN46N50L littelfuse_discrete_mosfets_n-channel_linear_ixtn46n50l_datasheet.pdf.pdf
IXTN46N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 46A SOT-227B
товар відсутній
IXTN62N50L littelfuse_discrete_mosfets_n-channel_linear_ixtn62n50l_datasheet.pdf.pdf
IXTN62N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 62A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
товар відсутній
IXTP02N50D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_02n50d_datasheet.pdf.pdf
IXTP02N50D
Виробник: IXYS
Description: MOSFET N-CH 500V 200MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
на замовлення 7935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+497.24 грн
10+ 429.97 грн
100+ 352.29 грн
500+ 281.44 грн
1000+ 237.36 грн
2000+ 225.49 грн
IXTP05N100 littelfuse_discrete_mosfets_n-channel_standard_ixta05n100_datasheet.pdf.pdf
IXTP05N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+187.54 грн
50+ 143.27 грн
100+ 122.8 грн
Мінімальне замовлення: 2
IXTP06N120P IXTP06N120P,IXTA06N120P.pdf
IXTP06N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+314.01 грн
50+ 239.66 грн
Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 26 27 28 29 30 31 32 33 34 35 66 99 132 165 198 231 264 297 330 337  [ Наступна Сторінка >> ]