| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DSB60C60PB | IXYS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.69V Case: TO220AB Kind of package: tube Max. forward impulse current: 490A Power dissipation: 145W Heatsink thickness: 1.14...1.39mm |
товар відсутній |
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 |
товар відсутній |
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IXTQ36N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO3P On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
товар відсутній |
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IXKT70N60C5 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 540W Case: TO268 On-state resistance: 45mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
товар відсутній |
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IXFK50N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO264 On-state resistance: 0.105Ω Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns |
товар відсутній |
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IXFR80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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MMIX1F160N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; Trench™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Pulsed drain current: 440A Power dissipation: 570W Case: SMPD Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 367nC Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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DSEP29-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO220AC Max. forward voltage: 2.52V Heatsink thickness: 1.14...1.39mm Power dissipation: 165W Reverse recovery time: 25ns Technology: HiPerFRED™ |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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DPG30C400HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W Mounting: THT Power dissipation: 90W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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DPG30C400PB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W Mounting: THT Power dissipation: 90W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Case: TO220AB Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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IXYB82N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.04kW Case: PLUS264™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 215nC Kind of package: tube Turn-on time: 119ns Turn-off time: 295ns |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IXYH82N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 380A Mounting: THT Gate charge: 215nC Kind of package: tube Turn-on time: 119ns Turn-off time: 295ns |
товар відсутній |
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DSI30-08A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 286 шт: термін постачання 21-30 дні (днів) |
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| DSI30-08AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 255A Max. forward voltage: 1.25V |
товар відсутній |
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DSI30-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
товар відсутній |
| DSB60C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.69V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 490A
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 145W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.69V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 490A
Power dissipation: 145W
Heatsink thickness: 1.14...1.39mm
товар відсутній
| IXFA26N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
товар відсутній
| IXTQ36N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| IXKT70N60C5 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| IXFK50N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
товар відсутній
| IXFR80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1963.5 грн |
| 2+ | 1723.61 грн |
| MMIX1F160N30T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Pulsed drain current: 440A
Power dissipation: 570W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 367nC
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2548.45 грн |
| 20+ | 2320.75 грн |
| DSEP29-06B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AC
Max. forward voltage: 2.52V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 165W
Reverse recovery time: 25ns
Technology: HiPerFRED™
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.76 грн |
| 3+ | 190.28 грн |
| 6+ | 152.23 грн |
| 15+ | 143.92 грн |
| DPG30C400HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO247-3; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.3 грн |
| 3+ | 251.17 грн |
| 5+ | 199.97 грн |
| 12+ | 188.9 грн |
| DPG30C400PB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.12 грн |
| 3+ | 180.6 грн |
| 6+ | 142.54 грн |
| 16+ | 134.93 грн |
| IXYB82N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.04kW
Case: PLUS264™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1570.05 грн |
| 2+ | 1378.34 грн |
| IXYH82N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 295ns
товар відсутній
| DSI30-08A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 286 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.01 грн |
| 9+ | 94.1 грн |
| 24+ | 89.26 грн |
| 250+ | 87.88 грн |
| DSI30-08AS-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
товар відсутній
| DSI30-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
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