| Фото | Назва | Виробник | Інформація |
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IXBT42N170A | IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage |
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IXGF32N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGH32N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXGH32N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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IXGT32N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 32A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage |
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IXGT32N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 350W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: SMD Gate charge: 155nC Kind of package: tube Turn-on time: 107ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
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| VUO55-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 750A Electrical mounting: screw Version: module Max. forward voltage: 1.03V Leads: M5 screws Case: PWS-B Mechanical mounting: screw |
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MDD255-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Max. off-state voltage: 1.6kV Load current: 270A Max. forward impulse current: 8.4kA Electrical mounting: screw Max. forward voltage: 1.4V Case: Y1-CU Mechanical mounting: screw Semiconductor structure: double series Type of module: diode Max. load current: 450A |
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DSI2x55-16A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.6kV Load current: 60A x2 Max. forward impulse current: 680A Electrical mounting: screw Max. forward voltage: 1.22V Case: SOT227B Mechanical mounting: screw Semiconductor structure: double independent Type of module: diode |
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IXGT25N160 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268 Type of transistor: IGBT Collector current: 25A Case: TO268 Mounting: SMD Gate-emitter voltage: ±20V Pulsed collector current: 200A Turn-on time: 283ns Turn-off time: 526ns Collector-emitter voltage: 1.6kV Power dissipation: 300W Technology: NPT Features of semiconductor devices: high voltage Kind of package: tube Gate charge: 84nC |
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DFE10I600PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W Mounting: THT Power dissipation: 30W Kind of package: tube Type of diode: rectifying Technology: FRED Case: TO220FP-2 Max. off-state voltage: 0.6kV Max. forward voltage: 1.38V Load current: 10A Semiconductor structure: single diode Reverse recovery time: 110ns Max. forward impulse current: 100A |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IXGH50N90B2 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3 Type of transistor: IGBT Technology: HiPerFAST™; XPT™ Collector-emitter voltage: 900V Collector current: 50A Power dissipation: 400W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 135nC Kind of package: tube Turn-on time: 48ns Turn-off time: 820ns |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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IXFK32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
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IXFK52N100X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 52A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.125Ω Mounting: THT Gate charge: 245nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 260ns |
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IXFR32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 0.35Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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| CPC1335P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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| CPC1335PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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IXTR16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 92nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 440ns Drain-source voltage: -600V Drain current: -10A On-state resistance: 0.79Ω Type of transistor: P-MOSFET Power dissipation: 190W Polarisation: unipolar |
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IXFH120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO247-3 On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 890W Case: TO247-3 On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 108ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXFH120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO247-3 On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXFH120N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 120A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFH150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO247-3 On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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IXFH180N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXTH44P15T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -44A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: THT Gate charge: 175nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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PLA170 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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PLA170S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| PLA170STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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DSS10-0045B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.46V Case: TO220AC Kind of package: tube Max. forward impulse current: 160A Power dissipation: 75W |
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DSS10-006A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Case: TO220AC Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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IXYH40N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 74nC Kind of package: tube Turn-on time: 81ns Turn-off time: 237ns |
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IXYX140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Turn-on time: 122ns Turn-off time: 0.3µs |
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| IXFZ520N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 420A Power dissipation: 600W Case: DE475 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 545nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFL32N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 24A Power dissipation: 520W Case: ISOPLUS i5-pac™ On-state resistance: 0.34Ω Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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MCC162-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| MCC162-18IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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LDA100 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6 Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Type of optocoupler: optocoupler |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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| LDA100S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
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LDA100STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 33-300%@1mA Trigger current: 50mA Type of optocoupler: optocoupler |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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IXXX200N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX4™; Trench; XPT™ Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 517nC Collector-emitter voltage: 650V |
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| VCO132-16io7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT Type of module: thyristor Leads: wire Ø 1.5mm Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Case: ECO-PAC 2 Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 130A Semiconductor structure: single thyristor Gate current: 300/400mA |
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IXFK160N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFK180N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 180A Power dissipation: 1390W Case: TO264 On-state resistance: 12.9mΩ Mounting: THT Gate charge: 364nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXFK230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: TO264 On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXFK240N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™; HiPerFET™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 1.25kW Case: TO264 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Gate charge: 460nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
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DMA50I800HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 0.5kA Semiconductor structure: single diode Case: TO247-2 Mounting: THT Kind of package: tube Load current: 50A |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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DMA30E1800HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W Max. forward impulse current: 370A Kind of package: tube Type of diode: rectifying Semiconductor structure: single diode Load current: 30A Max. forward voltage: 1.25V Max. off-state voltage: 1.8kV Case: TO247-2 Mounting: THT Power dissipation: 210W |
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IXTP36N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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| VMM650-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 500A Case: Y3-Li Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Technology: HiPerFET™ Gate-source voltage: ±20V Mechanical mounting: screw |
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IXGK400N30A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 200A Power dissipation: 1kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 560nC Kind of package: tube Turn-on time: 0.1µs Turn-off time: 565ns |
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IXGK75N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 75A Power dissipation: 780W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 530A Mounting: THT Gate charge: 410nC Kind of package: tube Turn-on time: 280ns Turn-off time: 725ns Features of semiconductor devices: high voltage |
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LBA127P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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| LBA127PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA127S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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PAA140 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
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PAA140L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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PAA140LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
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| PAA140LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
товар відсутній |
| IXBT42N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGF32N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGH32N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1238.47 грн |
| 2+ | 1087.6 грн |
| IXGH32N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT32N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT32N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
| VUO55-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.03V
Leads: M5 screws
Case: PWS-B
Mechanical mounting: screw
товар відсутній
| MDD255-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Max. off-state voltage: 1.6kV
Load current: 270A
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. forward voltage: 1.4V
Case: Y1-CU
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
Max. load current: 450A
товар відсутній
| DSI2x55-16A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.6kV
Load current: 60A x2
Max. forward impulse current: 680A
Electrical mounting: screw
Max. forward voltage: 1.22V
Case: SOT227B
Mechanical mounting: screw
Semiconductor structure: double independent
Type of module: diode
товар відсутній
| IXGT25N160 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Collector current: 25A
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Turn-on time: 283ns
Turn-off time: 526ns
Collector-emitter voltage: 1.6kV
Power dissipation: 300W
Technology: NPT
Features of semiconductor devices: high voltage
Kind of package: tube
Gate charge: 84nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Collector current: 25A
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Turn-on time: 283ns
Turn-off time: 526ns
Collector-emitter voltage: 1.6kV
Power dissipation: 300W
Technology: NPT
Features of semiconductor devices: high voltage
Kind of package: tube
Gate charge: 84nC
товар відсутній
| DFE10I600PM |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: FRED
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.38V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 110ns
Max. forward impulse current: 100A
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.47 грн |
| 10+ | 86.25 грн |
| 11+ | 77.13 грн |
| 30+ | 72.93 грн |
| IXGH50N90B2 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 573.92 грн |
| 3+ | 382.17 грн |
| 6+ | 361.13 грн |
| IXFK32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK52N100X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
товар відсутній
| IXFR32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2352.33 грн |
| IXFX32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| CPC1335P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| CPC1335PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| IXTR16P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
товар відсутній
| IXFH120N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 463.67 грн |
| 3+ | 387.08 грн |
| 6+ | 375.15 грн |
| 10+ | 361.13 грн |
| IXFH120N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 890W; TO247-3; 108ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 108ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 774.8 грн |
| 2+ | 661.95 грн |
| 3+ | 645.12 грн |
| 4+ | 626.19 грн |
| IXFH120N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 817.84 грн |
| 2+ | 621.28 грн |
| 4+ | 587.62 грн |
| IXFH120N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1133.5 грн |
| 2+ | 762.23 грн |
| 3+ | 720.86 грн |
| IXFH150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 150A; 714W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH180N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 918.28 грн |
| 2+ | 762.23 грн |
| 3+ | 720.86 грн |
| 10+ | 706.13 грн |
| IXTH44P15T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -44A; 298W; 140ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -44A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.67 грн |
| 3+ | 316.25 грн |
| 8+ | 298.72 грн |
| 30+ | 293.81 грн |
| PLA170 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| PLA170S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 330.76 грн |
| 6+ | 147.26 грн |
| 16+ | 138.84 грн |
| PLA170STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| DSS10-0045B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; 75W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 160A
Power dissipation: 75W
товар відсутній
| DSS10-006A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| IXYH40N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товар відсутній
| IXYX140N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товар відсутній
| IXFZ520N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFL32N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3306.1 грн |
| 25+ | 3011.05 грн |
| MCC162-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4604.23 грн |
| MCC162-18IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| LDA100 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 3.75kV; DIP6
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Type of optocoupler: optocoupler
на замовлення 137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.82 грн |
| 11+ | 32.82 грн |
| 25+ | 28.89 грн |
| 31+ | 27.35 грн |
| 83+ | 25.88 грн |
| LDA100S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
товар відсутній
| LDA100STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 33-300%@1mA; 50mA
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 33-300%@1mA
Trigger current: 50mA
Type of optocoupler: optocoupler
на замовлення 737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.19 грн |
| 8+ | 48.66 грн |
| 25+ | 38.01 грн |
| 30+ | 27.56 грн |
| 83+ | 26.09 грн |
| 250+ | 25.31 грн |
| IXXX200N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
товар відсутній
| VCO132-16io7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Leads: wire Ø 1.5mm
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 2
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 130A
Semiconductor structure: single thyristor
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Type of module: thyristor
Leads: wire Ø 1.5mm
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 2
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 130A
Semiconductor structure: single thyristor
Gate current: 300/400mA
товар відсутній
| IXFK160N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFK180N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1042.12 грн |
| IXFK230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1354.76 грн |
| 2+ | 1189.27 грн |
| IXFK240N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| DMA50I800HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 0.5kA
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 50A
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 0.5kA
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 50A
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.02 грн |
| 3+ | 216.68 грн |
| 5+ | 172.5 грн |
| 14+ | 163.38 грн |
| DMA30E1800HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.25V
Max. off-state voltage: 1.8kV
Case: TO247-2
Mounting: THT
Power dissipation: 210W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 30A; tube; Ifsm: 370A; TO247-2; 210W
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.25V
Max. off-state voltage: 1.8kV
Case: TO247-2
Mounting: THT
Power dissipation: 210W
товар відсутній
| IXTP36N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| VMM650-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 500A; Y3-Li; HiPerFET™; screw
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 100V
Drain current: 500A
Case: Y3-Li
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| IXGK400N30A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
товар відсутній
| IXGK75N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
товар відсутній
| LBA127P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA127PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA127S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 635.09 грн |
| 3+ | 281.89 грн |
| 9+ | 267.17 грн |
| LBA127STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PAA140 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
товар відсутній
| PAA140L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 786.12 грн |
| 3+ | 349.91 грн |
| 7+ | 330.98 грн |
| PAA140LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
товар відсутній
| PAA140LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
товар відсутній