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IXTH32P20T IXTH32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
товар відсутній
IXTA120P065T IXTA120P065T IXYS IXT_120P065T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+374.82 грн
3+ 312.75 грн
4+ 249.1 грн
9+ 235.95 грн
IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+540.99 грн
3+ 359.81 грн
7+ 340.43 грн
IXTH6N120 IXTH6N120 IXYS IXTH(T)6N120.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTT6N120 IXTT6N120 IXYS IXTH(T)6N120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTX17N120L IXTX17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
товар відсутній
IXTP28P065T IXTP28P065T IXYS IXT_28P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 31ns
товар відсутній
DMA30IM1600PZ-TUB DMA30IM1600PZ-TUB IXYS DMA30IM1600PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO263ABHV
Max. forward voltage: 1.26V
Max. forward impulse current: 255A
Power dissipation: 210W
Kind of package: tube
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+143.92 грн
8+ 114.17 грн
20+ 107.94 грн
Мінімальне замовлення: 3
IXFH86N30T IXFH86N30T IXYS IXFH(T)86N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 86A; 860W; TO247-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 86A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Power dissipation: 860W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 143nC
Kind of channel: enhanced
Case: TO247-3
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+732.49 грн
2+ 469.13 грн
5+ 442.84 грн
IXFH94N30P3 IXFH94N30P3 IXYS IXFH(Q,T)94N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+871.84 грн
2+ 570.85 грн
4+ 539.71 грн
DPG60C200HB DPG60C200HB IXYS DPG60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
1+399.41 грн
3+ 333.51 грн
4+ 252.56 грн
9+ 238.72 грн
DPG60C200QB DPG60C200QB IXYS DPG60C200QB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
2+256.34 грн
3+ 214.5 грн
5+ 162.6 грн
14+ 153.61 грн
Мінімальне замовлення: 2
IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+2251.88 грн
DSEP2X60-12A DSEP2X60-12A IXYS DSEP2x60-12A.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 800A
Case: SOT227B
Max. forward voltage: 1.52V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
товар відсутній
MCMA265P1600KA IXYS MCMA265P1600KA.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 260A; Y1; Ufmax: 1.46V
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.46V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y1
товар відсутній
MDMA380P1600KC IXYS MDMA380P1600KC.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.93V
Load current: 380A
Semiconductor structure: double series
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
товар відсутній
IXGH60N60C3 IXGH60N60C3 IXYS IXGH60N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
товар відсутній
IXBT42N300HV IXBT42N300HV IXYS IXBH(T)42N300HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+3202.7 грн
IXGF20N300 IXGF20N300 IXYS IXGF20N300.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+2712.39 грн
MCD162-12io1 MCD162-12io1 IXYS MCD162-12IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
MCD162-14io1 IXYS MCD162-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
IXTH200N10T IXTH200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+571.54 грн
3+ 361.19 грн
7+ 341.12 грн
IXTP200N055T2 IXTP200N055T2 IXYS IXTA(P)200N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+220.57 грн
3+ 184.05 грн
6+ 139.77 грн
Мінімальне замовлення: 2
IXTN200N10T IXTN200N10T IXYS IXTN200N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
товар відсутній
IXXX300N60B3 IXXX300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
товар відсутній
IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
товар відсутній
DPG80C400HB DPG80C400HB IXYS DPG80C400HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+344.26 грн
3+ 287.85 грн
4+ 225.57 грн
Мінімальне замовлення: 2
CLB30I1200HB CLB30I1200HB IXYS CLB30I1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
товар відсутній
CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS CLB30I1200PZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+216.84 грн
3+ 180.6 грн
6+ 137 грн
17+ 129.39 грн
Мінімальне замовлення: 2
IXFH170N25X3 IXFH170N25X3 IXYS IXFH(K,T)170N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+985.85 грн
3+ 864.92 грн
IXTR102N65X2 IXTR102N65X2 IXYS IXTR102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTX102N65X2 IXTX102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+271.98 грн
3+ 227.65 грн
5+ 181.29 грн
13+ 171.6 грн
Мінімальне замовлення: 2
DPF60IM400HB DPF60IM400HB IXYS DPF60IM400HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 600A; TO247-2; 275W
Kind of package: tube
Max. forward impulse current: 600A
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.27V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-2
товар відсутній
IXBOD2-13 IXYS IXBOD2.pdf Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
товар відсутній
CLA40E1200HR CLA40E1200HR IXYS CLA40E1200HR.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
1+626.68 грн
2+ 462.9 грн
5+ 438 грн
30+ 430.38 грн
MCK200-18io1 IXYS Category: Thyristor modules
Description: Module: thyristor; double,common cathode; 1.8kV; 216Ax2; Y4-M6
Mechanical mounting: screw
Semiconductor structure: common cathode; double
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 340A
Max. forward voltage: 1.52V
Load current: 216A x2
товар відсутній
IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
2+222.8 грн
3+ 186.82 грн
6+ 148.77 грн
15+ 140.46 грн
Мінімальне замовлення: 2
IXBX25N250 IXBX25N250 IXYS IXBX25N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
товар відсутній
PS2401 PS2401 IXYS PS2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Case: SIP4
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
товар відсутній
DNA40U2200GU IXYS media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
товар відсутній
GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
1+750.38 грн
2+ 556.32 грн
5+ 525.87 грн
16+ 515.49 грн
VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+1305.52 грн
2+ 1145.85 грн
VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
VBO25-16NO2 VBO25-16NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
DNA90YC2200NA DNA90YC2200NA IXYS DNA90YC2200NA.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common cathode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
товар відсутній
CPC1217Y CPC1217Y IXYS CPC1217.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+306.26 грн
6+ 142.54 грн
Мінімальне замовлення: 2
CPC1218Y CPC1218Y IXYS CPC1218.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; 1.1Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 920 шт:
термін постачання 21-30 дні (днів)
2+343.52 грн
6+ 158.45 грн
14+ 150.15 грн
Мінімальне замовлення: 2
CPC1984Y CPC1984Y IXYS CPC1984Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1986J CPC1986J IXYS CPC1986.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 650mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 650mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA160 PLA160 IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
1+430.7 грн
5+ 191.67 грн
12+ 180.6 грн
CPC1978J CPC1978J IXYS CPC1978.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LCA712 LCA712 IXYS LCA712.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 350µs
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+558.87 грн
4+ 248.4 грн
LCA717 LCA717 IXYS LCA717.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Turn-off time: 3ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 3ms
товар відсутній
OAA160 OAA160 IXYS OAA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+615.5 грн
3+ 274.7 грн
9+ 259.48 грн
CPC1215G CPC1215G IXYS CPC1215.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 353 шт:
термін постачання 21-30 дні (днів)
2+333.09 грн
6+ 154.3 грн
15+ 146 грн
Мінімальне замовлення: 2
CPC1330G CPC1330G IXYS CPC1330.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
CPC1393G CPC1393G IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
2+225.78 грн
8+ 101.02 грн
22+ 95.49 грн
Мінімальне замовлення: 2
IXTH32P20T IXT_32P20T.pdf
IXTH32P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
товар відсутній
IXTA120P065T IXT_120P065T.pdf
IXTA120P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+374.82 грн
3+ 312.75 грн
4+ 249.1 грн
9+ 235.95 грн
IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+540.99 грн
3+ 359.81 грн
7+ 340.43 грн
IXTH6N120 IXTH(T)6N120.pdf
IXTH6N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTT6N120 IXTH(T)6N120.pdf
IXTT6N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTX17N120L IXTK(X)17N120L.pdf
IXTX17N120L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
товар відсутній
IXTP28P065T IXT_28P065T.pdf
IXTP28P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 31ns
товар відсутній
DMA30IM1600PZ-TUB DMA30IM1600PZ.pdf
DMA30IM1600PZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO263ABHV
Max. forward voltage: 1.26V
Max. forward impulse current: 255A
Power dissipation: 210W
Kind of package: tube
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+143.92 грн
8+ 114.17 грн
20+ 107.94 грн
Мінімальне замовлення: 3
IXFH86N30T IXFH(T)86N30T.pdf
IXFH86N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 86A; 860W; TO247-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 86A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Power dissipation: 860W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 143nC
Kind of channel: enhanced
Case: TO247-3
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+732.49 грн
2+ 469.13 грн
5+ 442.84 грн
IXFH94N30P3 IXFH(Q,T)94N30P3.pdf
IXFH94N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+871.84 грн
2+ 570.85 грн
4+ 539.71 грн
DPG60C200HB DPG60C200HB.pdf
DPG60C200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+399.41 грн
3+ 333.51 грн
4+ 252.56 грн
9+ 238.72 грн
DPG60C200QB DPG60C200QB.pdf
DPG60C200QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+256.34 грн
3+ 214.5 грн
5+ 162.6 грн
14+ 153.61 грн
Мінімальне замовлення: 2
IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2251.88 грн
DSEP2X60-12A DSEP2x60-12A.pdf
DSEP2X60-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 800A
Case: SOT227B
Max. forward voltage: 1.52V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
товар відсутній
MCMA265P1600KA MCMA265P1600KA.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 260A; Y1; Ufmax: 1.46V
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.46V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y1
товар відсутній
MDMA380P1600KC MDMA380P1600KC.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.93V
Load current: 380A
Semiconductor structure: double series
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
товар відсутній
IXGH60N60C3 IXGH60N60C3.pdf
IXGH60N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
товар відсутній
IXBT42N300HV IXBH(T)42N300HV.pdf
IXBT42N300HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3202.7 грн
IXGF20N300 IXGF20N300.pdf
IXGF20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2712.39 грн
MCD162-12io1 MCD162-12IO1-DTE.pdf
MCD162-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
MCD162-14io1 MCD162-14io1.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
MCD162-18io1 MCD162-18IO1-DTE.pdf
MCD162-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
IXTH200N10T IXTH(Q)200N10T.pdf
IXTH200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+571.54 грн
3+ 361.19 грн
7+ 341.12 грн
IXTP200N055T2 IXTA(P)200N055T2.pdf
IXTP200N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+220.57 грн
3+ 184.05 грн
6+ 139.77 грн
Мінімальне замовлення: 2
IXTN200N10T IXTN200N10T.pdf
IXTN200N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
товар відсутній
IXXX300N60B3 IXXK(X)300N60B3.pdf
IXXX300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
товар відсутній
IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
товар відсутній
DPG80C400HB DPG80C400HB.pdf
DPG80C400HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+344.26 грн
3+ 287.85 грн
4+ 225.57 грн
Мінімальне замовлення: 2
CLB30I1200HB CLB30I1200HB.pdf
CLB30I1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
товар відсутній
CLB30I1200PZ-TUB CLB30I1200PZ.pdf
CLB30I1200PZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+216.84 грн
3+ 180.6 грн
6+ 137 грн
17+ 129.39 грн
Мінімальне замовлення: 2
IXFH170N25X3 IXFH(K,T)170N25X3_HV.pdf
IXFH170N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+985.85 грн
3+ 864.92 грн
IXTR102N65X2 IXTR102N65X2.pdf
IXTR102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTX102N65X2 IXTK(X)102N65X2.pdf
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+271.98 грн
3+ 227.65 грн
5+ 181.29 грн
13+ 171.6 грн
Мінімальне замовлення: 2
DPF60IM400HB DPF60IM400HB.pdf
DPF60IM400HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 60A; tube; Ifsm: 600A; TO247-2; 275W
Kind of package: tube
Max. forward impulse current: 600A
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.27V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 60ns
Power dissipation: 275W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-2
товар відсутній
IXBOD2-13 IXBOD2.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
товар відсутній
CLA40E1200HR CLA40E1200HR.pdf
CLA40E1200HR
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 63A
Load current: 40A
Gate current: 50/80mA
Case: ISO247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+626.68 грн
2+ 462.9 грн
5+ 438 грн
30+ 430.38 грн
MCK200-18io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double,common cathode; 1.8kV; 216Ax2; Y4-M6
Mechanical mounting: screw
Semiconductor structure: common cathode; double
Gate current: 150/220mA
Max. forward impulse current: 8kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Type of module: thyristor
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 340A
Max. forward voltage: 1.52V
Load current: 216A x2
товар відсутній
IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 116ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+222.8 грн
3+ 186.82 грн
6+ 148.77 грн
15+ 140.46 грн
Мінімальне замовлення: 2
IXBX25N250 IXBX25N250.pdf
IXBX25N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
товар відсутній
PS2401 PS2401.pdf
PS2401
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; THT
Case: SIP4
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 500V AC
Control current max.: 100mA
товар відсутній
DNA40U2200GU media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
товар відсутній
GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+750.38 грн
2+ 556.32 грн
5+ 525.87 грн
16+ 515.49 грн
VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1305.52 грн
2+ 1145.85 грн
VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Features of semiconductor devices: avalanche breakdown effect
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
VBO25-16NO2 VBO25_ser.pdf
VBO25-16NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Leads: connectors FASTON
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: FO-A
товар відсутній
DNA90YC2200NA DNA90YC2200NA.pdf
DNA90YC2200NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common cathode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
товар відсутній
CPC1217Y CPC1217.pdf
CPC1217Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+306.26 грн
6+ 142.54 грн
Мінімальне замовлення: 2
CPC1218Y CPC1218.pdf
CPC1218Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; 600mA; max.60VAC; max.60VDC; 1.1Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 920 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+343.52 грн
6+ 158.45 грн
14+ 150.15 грн
Мінімальне замовлення: 2
CPC1984Y CPC1984Y.pdf
CPC1984Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.66Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1986J CPC1986.pdf
CPC1986J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 650mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 650mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA160 PLA160.pdf
PLA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+430.7 грн
5+ 191.67 грн
12+ 180.6 грн
CPC1978J CPC1978.pdf
CPC1978J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 750mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 2.3Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LCA712 LCA712.pdf
LCA712
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 350µs
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+558.87 грн
4+ 248.4 грн
LCA717 LCA717.pdf
LCA717
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.30VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 30V AC; max. 30V DC
Turn-off time: 3ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 3ms
товар відсутній
OAA160 OAA160.pdf
OAA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 50mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 125µs
Turn-off time: 125µs
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+615.5 грн
3+ 274.7 грн
9+ 259.48 грн
CPC1215G CPC1215.pdf
CPC1215G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 353 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+333.09 грн
6+ 154.3 грн
15+ 146 грн
Мінімальне замовлення: 2
CPC1330G CPC1330.pdf
CPC1330G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
CPC1393G CPC1393.pdf
CPC1393G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+225.78 грн
8+ 101.02 грн
22+ 95.49 грн
Мінімальне замовлення: 2
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