| Фото | Назва | Виробник | Інформація |
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| IXDD414CI | IXYS |
 Description: IC GATE DRVR LOW-SIDE TO220-5Packaging: Tube Package / Case: TO-220-5 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: TO-220-5 Rise / Fall Time (Typ): 25ns, 22ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 14A, 14A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXDD414PI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 25ns, 22ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 14A, 14A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXDD414YI | IXYS |
Description: IC GATE DRVR LOW-SIDE TO263 Packaging: Tube Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: TO-263-5 Rise / Fall Time (Typ): 25ns, 22ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 14A, 14A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXBD4410SI | IXYS |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 3.65V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXBD4411PI | IXYS |
Description: IC GATE DRVR HIGH-SIDE 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 16-DIP Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 3.65V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXBD4411SI | IXYS |
Description: IC GATE DRVR HIGH-SIDE 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 3.65V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Obsolete DigiKey Programmable: Not Verified |
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| EVDD404 | IXYS |
Description: EVALUATION BOARD FOR IXDD404 DVR Packaging: Bulk Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IX DD404 DVR Supplied Contents: Board(s) Part Status: Obsolete |
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| EVDD408 | IXYS |
Description: EVALUATION BOARD FOR IXDD408 DVR Packaging: Bulk Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IX DD408 DVR Supplied Contents: Board(s) Part Status: Obsolete |
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| EVDD414 | IXYS |
Description: EVALUATION BOARD FOR IXDD414 DVR Packaging: Bulk Function: FET Driver (External FET) Type: Power Management Utilized IC / Part: IX DD414 DVR Supplied Contents: Board(s) Part Status: Obsolete |
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IXDI404PI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8DIP |
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IXDI404SI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8SOIC |
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IXDI404SI-16 | IXYS |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 16ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete |
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IXDN404PI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 16ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXDN404SI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 16ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXDN404SI-16 | IXYS |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 16ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXDF404PI | IXYS |
Description: IC MOSFET DRIVER LS 4A DUAL 8DIP |
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IXDF404SI | IXYS |
Description: IC MOSFET DRVR LS 4A DUAL 8-SOIC |
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IXDF404SI-16 | IXYS |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Inverting, Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 16ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Obsolete |
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MCC19-12io1B | IXYS |
Description: MOD THYRISTOR PHASE LEG TO-240AA |
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VHF15-14io5 | IXYS |
Description: BRIDGE RECTIF SGLE PHASE W/DIODE |
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DSS17-06CR | IXYS |
Description: DIODE SCHOTT 600V 17A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 17A Supplier Device Package: ISOPLUS247™ Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 600 V |
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IXCP10M90S | IXYS |
Description: IC CURRENT REGULATOR TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Function: Current Regulator Voltage - Input: 900V Current - Output: 100mA Operating Temperature: -55°C ~ 150°C Supplier Device Package: TO-220-3 Part Status: Active |
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DSEI2X101-12A | IXYS |
 Description: DIODE MOD GP 1.2KV 91A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 91A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 1200 V |
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DSS2X101-015A | IXYS |
Description: DIODE MOD SCHOTT 150V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A Current - Reverse Leakage @ Vr: 4 mA @ 150 V |
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MCC310-12io1 | IXYS |
Description: THYRISTOR MODULE 1300V Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 500 A Voltage - Off State: 1.2 kV |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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DSEI2X31-10B | IXYS |
Description: DIODE MODULE GP 1KV 30A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 1000 V |
на замовлення 134 шт: термін постачання 21-31 дні (днів) |
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IXFN36N60 | IXYS |
Description: MOSFET N-CH 600V 36A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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IXTH20N60 | IXYS |
Description: MOSFET N-CH 600V 20A TO-247AD |
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IXTP3N120 | IXYS |
Description: MOSFET N-CH 1200V 3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
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IXER35N120D1 | IXYS |
Description: IGBT 1200V 50A 200W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A Supplier Device Package: ISOPLUS247™ IGBT Type: NPT Switching Energy: 5.4mJ (on), 2.6mJ (off) Test Condition: 600V, 35A, 39Ohm, 15V Gate Charge: 150 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
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MCC4408I01B | IXYS |
Description: THYRISTOR MODULE RECTIFIER Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 51 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 80 A Voltage - Off State: 800 V |
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| VMO650-01F | IXYS |
Description: MOSFET N-CH 100V 690A Y3-DCB Packaging: Bulk Package / Case: Y3-DCB Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 690A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V Power Dissipation (Max): 2500W (Tc) Vgs(th) (Max) @ Id: 6V @ 130mA Supplier Device Package: Y3-DCB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MCD95-08io8B | IXYS |
Description: THYRISTOR DOUB 800V 116A TO-240 Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 116 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 180 A Voltage - Off State: 800 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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| DSI35-12A | IXYS |
Description: DIODE AVAL 1.2KV 49A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Avalanche Current - Average Rectified (Io): 49A Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A Current - Reverse Leakage @ Vr: 4 mA @ 1200 V |
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VUO52-16NO1 | IXYS |
Description: BRIDGE RECT 3P 1.6KV 54A V1-A Packaging: Bulk Package / Case: V1-A Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: V1-A Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 54 A Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 1600 V |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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MCC250-14io1 | IXYS |
Description: THYRISTOR DUAL 1400V 450A |
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IXGM40N60A | IXYS |
Description: IGBT MODULE 600V 75A 250W TO204 Package / Case: TO-204AA, TO-3 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A NTC Thermistor: No Supplier Device Package: TO-204 Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V |
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.jpg "IXSH40N60A") |
IXSH40N60A | IXYS |
Description: IGBT 600V 75A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 55ns/400ns Switching Energy: 2.5mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W |
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DSEP12-12A | IXYS |
Description: DIODE GEN PURP 1.2KV 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 536 шт: термін постачання 21-31 дні (днів) |
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| VUO60-16NO3 | IXYS |
Description: BRIDGE RECT 3P 1.6KV 72A FO-F-B |
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.jpg "IXGH32N170A") |
IXGH32N170A | IXYS |
Description: IGBT 1700V 32A 350W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/260ns Switching Energy: 1.5mJ (off) Test Condition: 850V, 32A, 2.7Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 110 A Power - Max: 350 W |
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IXBH16N170A | IXYS |
Description: IGBT 1700V 16A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 360 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 1.2mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
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IXTP01N100D | IXYS |
Description: MOSFET N-CH 1000V 400MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 25µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
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| VUE75-12NO7 | IXYS |
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1 |
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ME0500-06DA | IXYS |
Description: DIODE GEN PURP 600V 514A Y4-M6 Packaging: Bulk Package / Case: Y4-M6 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 514A Supplier Device Package: Y4-M6 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A Current - Reverse Leakage @ Vr: 24 mA @ 600 V |
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IXFN27N80 | IXYS |
Description: MOSFET N-CH 800V 27A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V |
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IXFX55N50F | IXYS |
Description: MOSFET N-CH 500V 55A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V |
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| VU068-08N07 | IXYS | Description: 3 PHASE BRIDGE RECTIFIER 800V 68 |
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MCC161-22IO1 | IXYS |
Description: THERISTER MODULE 2200V Packaging: Bulk Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 165 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 300 A Voltage - Off State: 2.2 kV |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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IXLF19N250A | IXYS |
Description: IGBT 2500V 32A 250W I4PAC Packaging: Bulk Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Switching Energy: 15mJ (on), 30mJ (off) Test Condition: 1500V, 19A, 47Ohm, 15V Gate Charge: 142 nC Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 2500 V Power - Max: 250 W |
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| MDI 300-12 A4 | IXYS |
Description: TRANS IGBT PWR MODULE 1.2KV 330A |
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| MEE 300-06DA | IXYS |
Description: DIODE MODULE 600V 304A Y4-M6 |
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IXFH40N50Q | IXYS |
Description: MOSFET N-CH 500V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
на замовлення 1410 шт: термін постачання 21-31 дні (днів) |
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| HTZ270H48K | IXYS |
Description: DIODE MODULE GP 48000V 3.4A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 3.4A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 48000 V Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 48000 V |
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IXGN60N60 | IXYS |
Description: IGBT MOD 600V 100A 250W SOT227B Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 |
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MCC250-18io1 | IXYS |
Description: THYRISTOR DUAL 1800V 450A |
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DSEE30-12A | IXYS |
Description: DIODE ARRAY GP 1200V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 4983 шт: термін постачання 21-31 дні (днів) |
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DSDI60-16A | IXYS |
Description: DIODE GEN PURP 1.6KV 63A TO247AD Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 63A Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A Current - Reverse Leakage @ Vr: 2 mA @ 1600 V |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
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MCC310-16io1 | IXYS |
Description: SCR DUAL 1600V 500A Y2-DCB Packaging: Bulk Package / Case: Y2-DCB Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 500 A Voltage - Off State: 1.6 kV |
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| VUO50-08NO3 | IXYS |
Description: BRIDGE RECT 3P 800V 58A FO-F-B |
товар відсутній |
| IXDD414CI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXDD414PI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXDD414YI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXBD4410SI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXBD4411PI |
|
Виробник: IXYS
Description: IC GATE DRVR HIGH-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXBD4411SI |
|
Виробник: IXYS
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| EVDD404 |
|
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD404 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD404 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVALUATION BOARD FOR IXDD404 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD404 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDD408 |
|
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD408 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD408 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVALUATION BOARD FOR IXDD408 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD408 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| EVDD414 |
|
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD414 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD414 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVALUATION BOARD FOR IXDD414 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD414 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
| IXDI404SI-16 |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
товар відсутній
| IXDN404PI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXDN404SI |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXDN404SI-16 |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IXDF404SI-16 |
|
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
товар відсутній
| DSS17-06CR |
|
Виробник: IXYS
Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
товар відсутній
| IXCP10M90S |
|
Виробник: IXYS
Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Part Status: Active
Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Part Status: Active
товар відсутній
| DSEI2X101-12A | |
|
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
товар відсутній
| DSS2X101-015A | |
|
Виробник: IXYS
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
| MCC310-12io1 |
|
Виробник: IXYS
Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9383.52 грн |
| DSEI2X31-10B |
|
Виробник: IXYS
Description: DIODE MODULE GP 1KV 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
Description: DIODE MODULE GP 1KV 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1736.73 грн |
| 10+ | 1485.72 грн |
| 100+ | 1299.45 грн |
| IXFN36N60 |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товар відсутній
| IXTP3N120 |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 1200V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товар відсутній
| IXER35N120D1 |
|
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
| MCC4408I01B |
|
Виробник: IXYS
Description: THYRISTOR MODULE RECTIFIER
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
Description: THYRISTOR MODULE RECTIFIER
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
товар відсутній
| VMO650-01F |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15474.66 грн |
| MCD95-08io8B |
|
Виробник: IXYS
Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2598.27 грн |
| DSI35-12A |
|
Виробник: IXYS
Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
товар відсутній
| VUO52-16NO1 |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2598.99 грн |
| 10+ | 2308.09 грн |
| IXGM40N60A |
|
Виробник: IXYS
Description: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Description: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
| IXSH40N60A |
|
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Description: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
| DSEP12-12A |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 536 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.73 грн |
| 50+ | 150.8 грн |
| 100+ | 124.08 грн |
| 500+ | 98.53 грн |
| IXGH32N170A |
|
Виробник: IXYS
Description: IGBT 1700V 32A 350W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
Description: IGBT 1700V 32A 350W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
товар відсутній
| IXBH16N170A |
|
Виробник: IXYS
Description: IGBT 1700V 16A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
Description: IGBT 1700V 16A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
товар відсутній
| IXTP01N100D |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 1000V 400MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товар відсутній
| ME0500-06DA |
|
Виробник: IXYS
Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
товар відсутній
| IXFN27N80 |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
товар відсутній
| IXFX55N50F |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
товар відсутній
| MCC161-22IO1 |
|
Виробник: IXYS
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
на замовлення 53 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8888.44 грн |
| 12+ | 7923.06 грн |
| IXLF19N250A |
|
Виробник: IXYS
Description: IGBT 2500V 32A 250W I4PAC
Packaging: Bulk
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
Description: IGBT 2500V 32A 250W I4PAC
Packaging: Bulk
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
товар відсутній
| IXFH40N50Q |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1357.34 грн |
| 30+ | 1058.43 грн |
| 120+ | 996.18 грн |
| 510+ | 847.23 грн |
| HTZ270H48K |
|
Виробник: IXYS
Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
товар відсутній
| IXGN60N60 |
|
Виробник: IXYS
Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
| DSEE30-12A |
|
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 4983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1353.75 грн |
| 10+ | 1158.02 грн |
| 100+ | 1012.83 грн |
| 500+ | 811.1 грн |
| DSDI60-16A |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 848.61 грн |
| 10+ | 720.03 грн |
| 100+ | 622.69 грн |
| MCC310-16io1 |
|
Виробник: IXYS
Description: SCR DUAL 1600V 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
Description: SCR DUAL 1600V 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
товар відсутній