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IXG100IF1200HFIXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
товар відсутній
IXG100NA60UIXYSMODULE
на замовлення 80 шт:
термін постачання 14-28 дні (днів)
IXG50I4500KNIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
IXG50I4500KNIXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXG611P1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8DIP
товар відсутній
IXG611S1IXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товар відсутній
IXG611S1T/RIXYSDescription: IC DRIVER MOSF/IGBT 0.6A 8-SOIC
товар відсутній
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXG70IF1200NAIXYSIGBT Modules IGBT MODULE - OTHERS
товар відсутній
IXG70IF1200NAIXYSDescription: IGBT MODULE - OTHERS SMPD-B
товар відсутній
IXG70IF1200NAIXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
товар відсутній
IXGA 15N120CIXYSLittelfuse
товар відсутній
IXGA10N60
Код товару: 98637		Транзистори > IGBT
товар відсутній
IXGA120N30TCIXYSDescription: IGBT 300V 120A 250W TO263AA
товар відсутній
IXGA12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGA12N100IXYSDescription: IGBT 1000V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N100AIXYSIGBT Transistors
товар відсутній
IXGA12N120A2IXYSDescription: IGBT 1200V 24A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
товар відсутній
IXGA12N120A2IXYSIGBT Transistors 24 Amps 1200V 2.7 Rds
товар відсутній
IXGA12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA12N120A3IXYSIGBT Transistors 1200V, 12A IGBT; G Series
на замовлення 1253 шт:
термін постачання 21-30 дні (днів)
1+420.03 грн
10+ 348.34 грн
50+ 257.07 грн
100+ 244.45 грн
250+ 237.8 грн
500+ 233.82 грн
1000+ 228.5 грн
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
IXGA12N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGA12N120A3IXYSDescription: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGA12N120A3-TRLIXYSDescription: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGA12N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 22A 100W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA12N120A3-TRLIXYSIGBT Transistors IXGA12N120A3 TRL
товар відсутній
IXGA12N60BIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N60BD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
IXGA12N60CIXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA12N60CIXYSIGBT Transistors 24 Amps 600V 2.7 Rds
товар відсутній
IXGA12N60CD1IXYSIGBT Transistors 24 Amps 600V 2.7 Rds
товар відсутній
IXGA12N60CD1IXYSDescription: IGBT 600V 24A 100W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGA150N30TCIXYSDescription: IGBT 300V 150A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: TO-263AA
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGA15N100CIXYSDescription: IGBT 1000V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGA15N100CIXYSIGBT Transistors 30 Amps 1000V 3.5 Rds
товар відсутній
IXGA15N120BIXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
товар відсутній
IXGA15N120BLittelfuseTrans IGBT Chip N-CH 1200V 30A 150000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA15N120BIXYSDescription: IGBT 1200V 30A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGA16N60B2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60C2IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
товар відсутній
IXGA16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGA16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0V Rds
товар відсутній
IXGA20N100IXYSDescription: IGBT 1000V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
товар відсутній
IXGA20N100-TRLLittelfuseLittelfuse DISC IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGA20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA20N120IXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
товар відсутній
IXGA20N120IXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
кількість в упаковці: 1 шт
на замовлення 377 шт:
термін постачання 7-14 дні (днів)
1+446.2 грн
3+ 387.15 грн
4+ 297.26 грн
9+ 280.65 грн
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120A3
Код товару: 56134		IXYSТранзистори > IGBT
Корпус: TO-263
Vces: 1200 V
Vce: 2,5 V
Ic 25: 40 A
Ic 100: 20 A
Pd 25: 180 W
td(on)/td(off) 100-150 град: 16/290
товар відсутній
IXGA20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+444.83 грн
10+ 437.71 грн
50+ 304.23 грн
IXGA20N120A3IXYSDescription: IGBT PT 1200V 40A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
IXGA20N120A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
на замовлення 377 шт:
термін постачання 21-30 дні (днів)
2+371.84 грн
3+ 310.68 грн
4+ 247.71 грн
9+ 233.87 грн
Мінімальне замовлення: 2
IXGA20N120A3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA20N120A3-TRLIXYSIGBT Transistors IXGA20N120A3 TRL
товар відсутній
IXGA20N120A3-TRLIXYSDescription: IXGA20N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товар відсутній
IXGA20N120BIXYSDescription: IGBT 1200V 40A 150W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
товар відсутній
IXGA20N120BIXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
товар відсутній
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
товар відсутній
IXGA20N120B3IXYSIGBT Modules GenX3 1200V IGBTs
товар відсутній
IXGA20N120B3IXYSDescription: IGBT 1200V 36A 180W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
кількість в упаковці: 1 шт
товар відсутній
IXGA20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA20N120B3-TRLIXYSIGBT Transistors IXGA20N120B3 TRL
товар відсутній
IXGA20N120B3-TRLIXYSDescription: IXGA20N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
IXGA20N250HVLittelfuseHigh Voltage IGBT
товар відсутній
IXGA20N250HVIXYSIGBT Transistors IGBT NPT-VERY HIVOLT
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+4191.03 грн
10+ 3755.32 грн
25+ 3156.55 грн
50+ 3095.44 грн
100+ 2966.58 грн
250+ 2920.74 грн
500+ 2875.57 грн
IXGA20N250HVIXYSDescription: DISC IGBT NPT-VERY HI VOLTAGE TO
товар відсутній
IXGA20N250HV-TRLIXYSIGBT Transistors DISC IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGA20N250HV-TRLIXYSDescription: DISC IGBT NPT VERY HI VOLTAGE TO
товар відсутній
IXGA20N60BIXYSIGBT Transistors 40 Amps 600V 2 Rds
товар відсутній
IXGA20N60BIXYSDescription: IGBT 600V 40A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO263
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
товар відсутній
IXGA24N120C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO263
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IXGA24N120C3IXYSIGBT Modules 40khz PT IGBTs Power Device
товар відсутній
IXGA24N120C3IXYSDescription: IGBT 1200V 48A 250W TO263
товар відсутній
IXGA24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA24N60CIXYSDescription: IGBT 600V 48A 150W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGA28N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товар відсутній
IXGA30N120B3IXYSIGBT Transistors GenX3 1200V IGBT
на замовлення 3995 шт:
термін постачання 21-30 дні (днів)
1+568.05 грн
10+ 492.71 грн
50+ 364.01 грн
100+ 350.73 грн
500+ 344.09 грн
1000+ 337.44 грн
IXGA30N120B3IXYSDescription: IGBT 1200V 60A 300W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
1+522.38 грн
50+ 401.63 грн
100+ 359.35 грн
IXGA30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
IXGA30N120B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGA30N120B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGA30N120B3 - IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (17-Jan-2023)
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
2+567.07 грн
10+ 512.67 грн
50+ 468.71 грн
100+ 394.4 грн
250+ 356.4 грн
Мінімальне замовлення: 2
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA30N120B3-TRLIXYSIGBT Transistors IXGA30N120B3 TRL
товар відсутній
IXGA30N120B3-TRLLittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA30N120B3-TRLIXYSDescription: IXGA30N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGA30N60C3IXYSDescription: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGA30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGA30N60C3C1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
товар відсутній
IXGA30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
IXGA30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA30N60C3D4IXYSDescription: IGBT 600V 60A 220W TO263
товар відсутній
IXGA30N60C3D4IXYSIGBT Transistors 600V 30A
товар відсутній
IXGA30N60C3D4LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXGA36N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGA36N60A3IXYSIGBT Transistors Disc IGBT PT-Low Frequency TO-263D2
товар відсутній
IXGA42N30C3IXYSIXGA42N30C3 SMD IGBT transistors
товар відсутній
IXGA42N30C3IXYSDescription: IGBT 300V 223W TO263AA
товар відсутній
IXGA48N60A3IXYSIGBT Transistors 48 Amps 600V
на замовлення 491 шт:
термін постачання 21-30 дні (днів)
1+426.23 грн
10+ 352.92 грн
50+ 260.39 грн
100+ 226.51 грн
250+ 210.57 грн
500+ 209.24 грн
1000+ 178.69 грн
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
на замовлення 213 шт:
термін постачання 7-14 дні (днів)
1+404.18 грн
3+ 350.08 грн
4+ 259.06 грн
11+ 244.95 грн
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60A3IXYSDescription: IGBT 600V 120A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
товар відсутній
IXGA48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
IXGA48N60A3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
2+336.81 грн
3+ 280.93 грн
4+ 215.88 грн
11+ 204.12 грн
Мінімальне замовлення: 2
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+236.69 грн
1600+ 195.16 грн
2400+ 183.77 грн
Мінімальне замовлення: 800
IXGA48N60A3-TRLIXYSIGBT Transistors IXGA48N60A3 TRL
на замовлення 643 шт:
термін постачання 21-30 дні (днів)
1+426.23 грн
10+ 352.92 грн
25+ 296.92 грн
100+ 248.43 грн
250+ 240.46 грн
500+ 220.53 грн
800+ 178.02 грн
IXGA48N60A3-TRLIXYSDescription: IXGA48N60A3 TRL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 4745 шт:
термін постачання 21-31 дні (днів)
1+392.33 грн
10+ 316.98 грн
100+ 256.42 грн
IXGA48N60A3-TRLLittelfuseTrans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK T/R
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+196.07 грн
Мінімальне замовлення: 800
IXGA48N60B3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGA48N60B3IXYSDescription: IGBT 600V 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGA48N60B3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60B3-TRLIXYSIGBT Transistors IXGA48N60B3 TRL
товар відсутній
IXGA48N60B3-TRLIXYSDescription: IXGA48N60B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGA48N60C3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGA48N60C3IXYSDescription: IGBT 600V 75A 300W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGA48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXGA48N60C3-TRLIXYSIGBT Transistors IXGA48N60C3 TRL
товар відсутній
IXGA48N60C3-TRLIXYSDescription: IXGA48N60C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGA4N100IXYSIGBT Transistors 8 Amps 1000V 2.7 Rds
товар відсутній
IXGA4N100IXYSDescription: IGBT 1000V 8A 40W TO263AA
товар відсутній
IXGA50N60C4IXYSDescription: IGBT 600V 90A 300W TO263
товар відсутній
IXGA7N60BIXYSIGBT Transistors 14 Amps 600V 2.0 Rds
товар відсутній
IXGA7N60BIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
товар відсутній
IXGA7N60BD1IXYSDescription: IGBT 600V 14A 80W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/100ns
Switching Energy: 300µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
товар відсутній
IXGA7N60CIXYSDescription: IGBT 600V 14A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/65ns
Switching Energy: 70µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
товар відсутній
IXGA7N60CIXYSIGBT Transistors 14 Amps 600V 2.7 Rds
товар відсутній
IXGA7N60CD1IXYSIGBT Transistors 14 Amps 600V 2.7 Rds
товар відсутній
IXGA7N60CD1IXYSDescription: IGBT 600V 14A 75W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 10ns/65ns
Switching Energy: 120µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 75 W
товар відсутній
IXGA8N100IXYSIGBT Transistors 16 Amps 1000V 2.7 Rds
товар відсутній
IXGA8N100IXYSDescription: IGBT 1000V 16A 54W TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/600ns
Switching Energy: 2.3mJ (off)
Test Condition: 800V, 8A, 120Ohm, 15V
Gate Charge: 26.5 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 54 W
товар відсутній
IXGA90N33TCIXYSDescription: IGBT 330V 90A 200W TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
Supplier Device Package: TO-263AA
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 200 W
товар відсутній
IXGB200N60B3IXYSDescription: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
товар відсутній
IXGB200N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 1250mW 3-Pin(3+Tab) PLUS 264
товар відсутній
IXGB200N60B3IXYSIGBT Transistors GenX3 600V IGBT
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
IXGB75N60BD1IXYSDescription: IGBT 600V 120A 360W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 62ns/220ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 75A, 5Ohm, 15V
Gate Charge: 248 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
товар відсутній
IXGC12N60CIXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
товар відсутній
IXGC12N60CD1IXYSDescription: IGBT 600V 15A 85W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 85 W
товар відсутній
IXGC16N60B2IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60B2D1IXYSDescription: IGBT 600V 28A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/70ns
Switching Energy: 150mJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2IXYSIGBT Transistors 8 Amps 600V 3 V Rds
товар відсутній
IXGC16N60C2IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2D1IXYSDescription: IGBT 600V 20A 63W ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: ISOPLUS220™
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/60ns
Switching Energy: 60µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 63 W
товар відсутній
IXGC16N60C2D1IXYSIGBT Transistors 8 Amps 600V 3 V Rds
товар відсутній
IXGE200N60BIXYSDescription: IGBT MOD 600V 160A ISOPLUS227
Packaging: Tube
Package / Case: ISOPLUS227™
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: ISOPLUS227™
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGE200N60BIXYSIGBT Transistors 175 Amps 600V 2.1 Rds
товар відсутній
IXGF20N250IXYSDescription: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
товар відсутній
IXGF20N250IXYSIGBT Transistors DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+
товар відсутній
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF20N300IXYSDescription: IGBT 3000V 22A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+3400.17 грн
25+ 2743.39 грн
100+ 2560.47 грн
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+2712.39 грн
IXGF20N300IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGF20N300LittelfuseTrans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF20N300IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 7-14 дні (днів)
1+3254.86 грн
IXGF25N250
Код товару: 149950		Транзистори > IGBT
товар відсутній
IXGF25N250LittelfuseTrans IGBT Chip N-CH 2500V 30A 114000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF25N250IXYSIGBT Transistors IGBT NPT-VERY HIVOLT
товар відсутній
IXGF25N250IXYSDescription: IGBT 2500V 30A 114W I4-PAK
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
товар відсутній
IXGF25N300IXYSDescription: IGBT 3000V 27A 114W I4-PAK
товар відсутній
IXGF25N300LittelfuseTrans IGBT Chip N-CH 3000V 27A 114000mW 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF25N300IXYSIGBT Transistors
товар відсутній
IXGF30N400IXYSDescription: IGBT 4000V 30A 160W I4-PAK
товар відсутній
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF30N400IXYSIGBT Transistors IGBT NPT-HI VOLTAGE
товар відсутній
IXGF30N400
Код товару: 167341		Транзистори > IGBT
товар відсутній
IXGF30N400LittelfuseTrans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
товар відсутній
IXGF32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGF32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGF32N170 - IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.5
DC-Kollektorstrom: 44
Anzahl der Pins: 3
Bauform - Transistor: ISOPLUS i4-PAC
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Verlustleistung Pd: 200
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGF32N170IXYSDescription: IGBT 1700V 44A 200W I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 10.6mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 200 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1649.07 грн
25+ 1316.06 грн
100+ 1233.83 грн
IXGF32N170LittelfuseTrans IGBT Chip 1700V 44A 200000mW 3-Pin ISOPLUS I4-PAC
товар відсутній
IXGF32N170IXYSIGBT Transistors 26 Amps 1700V 3.5 V Rds
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
1+1790.95 грн
10+ 1568.28 грн
50+ 1329.18 грн
100+ 1192.34 грн
500+ 1023.62 грн
IXGF36N300IXYSDescription: IGBT 3000V 36A 160W I4-PAK
товар відсутній
IXGF36N300LittelfuseTrans IGBT Chip N-CH 3000V 36A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC
товар відсутній
IXGF36N300IXYSIGBT Transistors
товар відсутній
IXGH100N30C3IXYSIGBT Transistors 100 Amps 300V
товар відсутній
IXGH100N30C3IXYSDescription: IGBT 300V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/105ns
Switching Energy: 230µJ (on), 520µJ (off)
Test Condition: 200V, 50A, 2Ohm, 15V
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 460 W
товар відсутній
IXGH10N100IXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N100IXYSIGBT Transistors 1000V 20A
товар відсутній
IXGH10N100AIXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N100AIXYSIGBT Transistors 10 Amps 1000V 4 Rds
товар відсутній
IXGH10N100AU1IXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N100U1IXYSDescription: IGBT 1000V 20A 100W TO247AD
товар відсутній
IXGH10N170IXYSDescription: IGBT 1700V 20A 110W TO247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+635.2 грн
IXGH10N170IXYSIGBT Transistors 20 Amps 1700 V 4 V Rds
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+682.75 грн
10+ 608.06 грн
30+ 504.84 грн
120+ 437.75 грн
IXGH10N170IXYSIXGH10N170 THT IGBT transistors
товар відсутній
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH10N170ALittelfuseTrans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH10N170AIXYSDescription: IGBT 1700V 10A 140W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/190ns
Switching Energy: 380µJ (off)
Test Condition: 850V, 10A, 22Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 140 W
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+663.22 грн
10+ 577.14 грн
IXGH10N170AIXYSIGBT Transistors 20 Amps 1700 V 7 V Rds
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+762.57 грн
10+ 679.1 грн
30+ 563.29 грн
120+ 488.89 грн
IXGH10N170AIXYSIXGH10N170A THT IGBT transistors
на замовлення 54 шт:
термін постачання 7-14 дні (днів)
1+637.56 грн
3+ 447.54 грн
6+ 423.46 грн
IXGH10N300IXYSDescription: IGBT 3000V 18A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IXGH10N300Ixys CorporationTrans IGBT Chip N-CH 3000V 18A 100mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH120N30B3IXYSIGBT Transistors 120 Amps 300V
товар відсутній
IXGH120N30B3IXYSIXGH120N30B3 THT IGBT transistors
товар відсутній
IXGH120N30B3IXYSDescription: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
товар відсутній
IXGH120N30C3IXYSIGBT Transistors 120 Amps 300V
товар відсутній
IXGH120N30C3IXYSIXGH120N30C3 THT IGBT transistors
товар відсутній
IXGH120N30C3IXYSDescription: IGBT 300V 75A 540W TO247
товар відсутній
IXGH12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGH12N100IXYSDescription: IGBT 1000V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N120A2D1IXYSDescription: IGBT 1200V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH12N120A2D1IXYSMOSFET 24 Amps 1200V 2.7 Rds
товар відсутній
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGH12N120A3IXYSIGBT Modules GenX3 1200V IGBTs
товар відсутній
IXGH12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
IXGH12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH12N120A3IXYSDescription: IGBT 1200V 22A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGH12N60BIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60BD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60CIXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N60CD1IXYSDescription: IGBT 600V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH12N90CIXYSIGBT Transistors 24 Amps 900V 3 Rds
товар відсутній
IXGH12N90CIXYSDescription: IGBT 900V 24A 100W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/135ns
Switching Energy: 320µJ (off)
Test Condition: 720V, 12A, 22Ohm, 15V
Gate Charge: 33 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGH15N120BIXYSDescription: IGBT 1200V 30A 180W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
товар відсутній
IXGH15N120BIXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
товар відсутній
IXGH15N120B2D1IXYSIGBT Transistors 30 Amps 1200V 2.7 V Rds
товар відсутній
IXGH15N120B2D1IXYSDescription: IGBT 1200V 30A 192W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 165 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/165ns
Switching Energy: 1.4mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 192 W
товар відсутній
IXGH15N120BD1IXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120BD1IXYSIGBT Transistors 30 Amps 1200V 3.2 Rds
товар відсутній
IXGH15N120CIXYSDescription: IGBT 1200V 30A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120CD1IXYSIGBT Transistors 30 Amps 1200V 3.8 Rds
товар відсутній
IXGH15N120CD1IXYSDescription: IGBT 1200V 30A 150W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGH15N120CD1IXYSMODULE
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGH16N170IXYSIGBT Transistors 32 Amps 1700 V 3.5 V Rds
на замовлення 1129 шт:
термін постачання 21-30 дні (днів)
1+912.14 грн
10+ 840.29 грн
30+ 636.36 грн
60+ 632.37 грн
120+ 623.74 грн
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH16N170 - IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 190W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 32A
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
1+845.01 грн
5+ 764.54 грн
10+ 684.06 грн
50+ 616.51 грн
100+ 551.85 грн
IXGH16N170
Код товару: 119539		IXYSТранзистори > IGBT
Корпус: TO-247
Vces: 1700 V
Vce: 3,5 V
Ic 25: 32 A
Ic 100: 16 A
у наявності 9 шт:
4 шт - склад
4 шт - РАДІОМАГ-Київ
1 шт - РАДІОМАГ-Одеса
1+303 грн
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
товар відсутній
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170IXYSDescription: IGBT 1700V 32A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/400ns
Switching Energy: 9.3mJ (off)
Test Condition: 1360V, 16A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
на замовлення 4130 шт:
термін постачання 21-31 дні (днів)
1+832.08 грн
10+ 705.77 грн
100+ 610.4 грн
500+ 519.13 грн
1000+ 476.17 грн
IXGH16N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170LittelfuseTrans IGBT Chip N-CH 1700V 32A 190mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH16N170AIXYSIGBT Transistors 32 Amps 1700 V 5 V Rds
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
1+957.86 грн
10+ 831.88 грн
30+ 630.38 грн
60+ 625.07 грн
510+ 566.61 грн
1020+ 559.31 грн
IXGH16N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH16N170ALittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
IXGH16N170AIXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
1+873.75 грн
10+ 741.13 грн
100+ 640.97 грн
500+ 545.14 грн
1000+ 500.03 грн
IXGH16N170AH1IXYSIGBT Transistors 11 Amps 1700V 5 Rds
товар відсутній
IXGH16N170AH1LittelfuseTrans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH16N170AH1IXYSDescription: IGBT 1700V 16A 190W TO247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 230 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 900µJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 190 W
товар відсутній
IXGH16N60B2IXYSIGBT Transistors 600V 16A
товар відсутній
IXGH16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGH16N60B2D1IXYSIGBT Transistors 16 Amps 600V 2.3 V Rds
товар відсутній
IXGH16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3 V Rds
товар відсутній
IXGH16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGH17N100LittelfuseTrans IGBT Chip N-CH 1000V 34A 150000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH17N100IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100IXYSIGBT Transistors 17 Amps 1000V 4 Rds
товар відсутній
IXGH17N100AIXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH17N100Aixys07+
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGH17N100AIXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100AU1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100AU1IXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH17N100U1IXYSDescription: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
товар відсутній
IXGH17N100U1IXYSIGBT Transistors 17 Amps 1000V
товар відсутній
IXGH1961LittelfuseIXGH1961
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
3+230.18 грн
Мінімальне замовлення: 3
IXGH1961LittelfuseIXGH1961
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
59+199.33 грн
Мінімальне замовлення: 59
IXGH20N100IXYSDescription: IGBT 1000V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N120IXYSIGBT Transistors 40 Amps 1200V 3 V Rds
товар відсутній
IXGH20N120IXYSDescription: IGBT 1200V 40A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 296 шт:
термін постачання 7-14 дні (днів)
1+492.7 грн
3+ 378.53 грн
8+ 344.58 грн
30+ 339.6 грн
IXGH20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+410.58 грн
3+ 303.76 грн
8+ 287.15 грн
30+ 283 грн
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
на замовлення 271 шт:
термін постачання 21-30 дні (днів)
1+561.08 грн
30+ 441.53 грн
120+ 347.41 грн
510+ 331.46 грн
IXGH20N120A3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH20N120A3 - IGBT, 40A, 2.5V, 180W, 1.2kV, TO-247AD, 3 Pins
Kollektor-Emitter-Spannung, max.: 1.2
Verlustleistung: 180
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 40
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH20N120A3IXYSDescription: IGBT 1200V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+506.58 грн
30+ 389.4 грн
120+ 348.41 грн
510+ 288.5 грн
IXGH20N120BIXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 190 W
товар відсутній
IXGH20N120BD1IXYSDescription: IGBT 1200V 40A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Gate Charge: 72 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
товар відсутній
IXGH20N120BD1IXYSIGBT Transistors 20 Amps 1200V 3.40 Rds
товар відсутній
IXGH20N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH20N120IHIXYSMOSFET 20 Amps 1200V
товар відсутній
IXGH20N140C3H1IXYSDescription: IGBT 1400V 42A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/110ns
Switching Energy: 1.35mJ (on), 440µJ (off)
Test Condition: 700V, 20A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 250 W
товар відсутній
IXGH20N140C3H1IXYSIGBT Transistors GenX3 1400V IGBTs w/ Diode
товар відсутній
IXGH20N160IXYSIGBT Transistors 600V 40A
товар відсутній
IXGH20N160IXYSDescription: IGBT 600V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGH20N60IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60AIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60AU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH20N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/110ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH20N60BU1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH22N140IHIXYSMOSFET 22 Amps 1400V
товар відсутній
IXGH22N140IHIXYSDescription: IGBT 1400V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1400 V
товар відсутній
IXGH240N30PBIXYSIGBT Transistors 240 Amps 300V
товар відсутній
IXGH240N30PBIXYSDescription: IGBT 300V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
IXGH24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH24N120C3IXYSDescription: IGBT 1200V 48A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)
1+562.62 грн
30+ 432.48 грн
120+ 386.95 грн
510+ 320.42 грн
1020+ 288.38 грн
IXGH24N120C3IXYSIGBT Transistors 48 Amps 1200V
на замовлення 508 шт:
термін постачання 21-30 дні (днів)
1+616.87 грн
10+ 560.7 грн
120+ 403.2 грн
270+ 366.01 грн
510+ 344.09 грн
1020+ 317.52 грн
IXGH24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N120C3H1IXYSIGBT Transistors High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
товар відсутній
IXGH24N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGH24N120IHIXYSIGBT Transistors 24 Amps 1200V
товар відсутній
IXGH24N120IHIXYSDescription: IGBT 1200V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
1+1227.73 грн
3+ 1119.21 грн
IXGH24N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1023.11 грн
3+ 898.13 грн
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH24N170 - IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.5V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 50A
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+1431.45 грн
5+ 1295.09 грн
10+ 1157.98 грн
50+ 1044.13 грн
100+ 935.07 грн
IXGH24N170IXYSIGBT Transistors 50 Amps 1700V 3.3 V Rds
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
1+1515.06 грн
10+ 1316.19 грн
30+ 1082.08 грн
60+ 1050.86 грн
120+ 989.08 грн
510+ 896.08 грн
1020+ 840.95 грн
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170IXYSDescription: IGBT 1700V 50A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 42ns/200ns
Switching Energy: 8mJ (off)
Test Condition: 1360V, 50A, 5Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1381.77 грн
IXGH24N170LittelfuseTrans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170AIXYSIGBT Transistors 24 Amps 1200 V 5 V Rds
товар відсутній
IXGH24N170AIXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH24N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH24N170ALittelfuseTrans IGBT Chip N-CH 1700V 25A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH24N170AH1IXYSDescription: IGBT 1700V 24A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/336ns
Switching Energy: 2.97mJ (on), 790µJ (off)
Test Condition: 850V, 24A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
товар відсутній
IXGH24N170AH1IXYSIGBT Transistors High Voltage IGBT w/ Diode
товар відсутній
IXGH24N60AIXYSMODULE
на замовлення 92 шт:
термін постачання 14-28 дні (днів)
IXGH24N60AIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
товар відсутній
IXGH24N60AU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 1.5mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60BIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60BU1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 600µJ (on), 800µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60CIXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGH24N60C4IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGH24N60C4D1IXYSDescription: IGBT 600V 56A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGH24N60CD1
Код товару: 36487		Транзистори > IGBT
товар відсутній
IXGH24N60CD1IXYSDescription: IGBT 600V 48A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH25N100IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100IXYSIGBT Transistors 1000V 50A
товар відсутній
IXGH25N100AIXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100AIXYSIGBT Transistors HIGH SPEED IGBT 1000V 50A
товар відсутній
IXGH25N100AU1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100AU1IXYSIGBT Transistors 1000V 50A
товар відсутній
IXGH25N100U1IXYSDescription: IGBT 1000V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N100U1IXYSIGBT Transistors 1000V 50A
товар відсутній
IXGH25N120IXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120IXYSIGBT Transistors 50 Amps 1200V 3 Rds
товар відсутній
IXGH25N120AIXYSDescription: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGH25N120AIXYSIGBT Transistors 25 Amps 1200V
товар відсутній
IXGH25N160IXYSDescription: IGBT 1600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH25N160IXYSIGBT Transistors 75 Amps 1600V 2.5 Rds
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
1+1174.85 грн
10+ 1019.8 грн
30+ 863.54 грн
60+ 815.71 грн
120+ 767.22 грн
270+ 743.3 грн
510+ 713.41 грн
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+754.9 грн
Мінімальне замовлення: 30
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N160LittelfuseTrans IGBT Chip N-CH 1600V 75A 300mW 3-Pin(3+Tab) TO-247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+993.33 грн
Мінімальне замовлення: 30
IXGH25N160IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH25N160LITTELFUSEDescription: LITTELFUSE - IXGH25N160 - TRANSISTOR, IGBT, 1.6KV, 75A, TO-247
Kollektor-Emitter-Spannung, max.: 1.6
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: To Be Advised
товар відсутній
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH25N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH25N250IXYSDescription: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH25N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
товар відсутній
IXGH25N250LittelfuseTrans IGBT Chip N-CH 2500V 60A 250mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH26N50TO-220
на замовлення 89 шт:
термін постачання 14-28 дні (днів)
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
3+244.76 грн
10+ 241.69 грн
25+ 239.03 грн
50+ 228.26 грн
Мінімальне замовлення: 3
IXGH28N120BIXYSIGBT Transistors 28 Amps 1200V 3.50 Rds
товар відсутній
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
45+260.46 грн
46+ 257.96 грн
50+ 246.85 грн
Мінімальне замовлення: 45
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BIxysTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BIxys CorporationTrans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BD1IXYSDescription: IGBT 1200V 50A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 2.2mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH28N120BD1LittelfuseTrans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH28N120BD1IXYSIGBT Transistors 28 Amps 1200V 3.50 Rds
товар відсутній
IXGH28N140B3H1IXYSIGBT Transistors Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGH28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGH28N60A3IXYSDescription: IGBT
товар відсутній
IXGH28N60A3IXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
товар відсутній
IXGH28N60BIXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH28N60B3D1IXYSDescription: IGBT 600V 66A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 340µJ (on), 650µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
1+539.63 грн
30+ 414.72 грн
IXGH28N60B3D1IXYSIGBT Transistors 28 Amps 600V
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
1+586.65 грн
10+ 495.01 грн
30+ 391.25 грн
120+ 369.33 грн
510+ 362.68 грн
1020+ 355.38 грн
2520+ 348.74 грн
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
товар відсутній
IXGH28N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXGH28N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 66A 190000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH28N60BD1IXYSDescription: IGBT 600V 40A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/175ns
Switching Energy: 2mJ (off)
Test Condition: 480V, 28A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH28N90BIXYSIGBT Transistors 51 Amps 900V 2.5 Rds
товар відсутній
IXGH28N90BIXYSDescription: IGBT 900V 51A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 1.2mJ (off)
Test Condition: 720V, 28A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+1058.13 грн
2+ 742.45 грн
3+ 701.62 грн
IXGH2N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 297 шт:
термін постачання 7-14 дні (днів)
1+1269.75 грн
2+ 925.2 грн
3+ 841.95 грн
IXGH2N250IXYSDescription: IGBT 2500V 5.5A 32W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13.5 A
Power - Max: 32 W
товар відсутній
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH2N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
1+1174.85 грн
10+ 1019.8 грн
30+ 863.54 грн
60+ 815.71 грн
120+ 767.22 грн
270+ 743.3 грн
510+ 697.47 грн
IXGH2N250LittelfuseTrans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N120B3IXYSIGBT Transistors IGBT PT-MID FREQUNCY
товар відсутній
IXGH30N120B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGH30N120B3LittelfuseTrans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1IXYSDescription: IGBT 1200V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+727.17 грн
30+ 567.13 грн
120+ 533.78 грн
IXGH30N120B3D1LittelfuseTrans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
IXGH30N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120B3D1IXYSIGBT Transistors 60 Amps 1200V
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
1+789.69 грн
10+ 727.23 грн
30+ 548.68 грн
60+ 548.01 грн
120+ 516.13 грн
270+ 506.83 грн
510+ 457.67 грн
IXGH30N120B3D1 Транзистор IGBT 1200V 300W TO247AD
Код товару: 162398		Транзистори > IGBT
товар відсутній
IXGH30N120BD1IXYSDescription: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH30N120BD1IXYSMOSFET 50 Amps 1200V 3.5 V Rds
товар відсутній
IXGH30N120C3H1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGH30N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
товар відсутній
IXGH30N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
кількість в упаковці: 1 шт
товар відсутній
IXGH30N120C3H1IXYSDescription: IGBT 1200V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/106ns
Switching Energy: 1.45mJ (on), 470µJ (off)
Test Condition: 600V, 24A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 250 W
товар відсутній
IXGH30N120IHIXYSDescription: IGBT 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGH30N60AIXYSDescription: IGBT 600V 50A 200W TO247AD
товар відсутній
IXGH30N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60B2IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60B2IXYSIGBT Transistors 30 Amps 600V 1.8 V Rds
товар відсутній
IXGH30N60B2D1IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/110ns
Switching Energy: 320µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60B2D1
Код товару: 30215		Транзистори > IGBT
товар відсутній
IXGH30N60B4IXYSDescription: IGBT 600V 66A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 440µJ (on), 700µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 190 W
товар відсутній
IXGH30N60BD1IXYSDescription: IGBT 600V 60A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60BU1IXYSIGBT Transistors 60 Amps 600V 1.8 Rds
товар відсутній
IXGH30N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/130ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH30N60C2IXYSDescription: IGBT 600V 70A 190W TO247
товар відсутній
IXGH30N60C2D1IXYSDescription: IGBT 600V 70A 190W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/70ns
Switching Energy: 190µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH30N60C2D4IXYSDescription: IGBT 600V 60A TO247AD
товар відсутній
IXGH30N60C3IXYS/LittelfuseТранзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
на замовлення 27 шт:
термін постачання 2-3 дні (днів)
6+113.05 грн
10+ 105.52 грн
100+ 97.98 грн
Мінімальне замовлення: 6
IXGH30N60C3LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3IXYSDescription: IGBT 600V 60A 220W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3IXYSIGBT Modules 30 Amps 600V
товар відсутній
IXGH30N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3C1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/42ns
Switching Energy: 120µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
товар відсутній
IXGH30N60C3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
IXGH30N60C3C1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH30N60C3C1 - IGBT, Einzeltransistor, Siliziumkarbid, 60A, 3V, 220W, 600V, TO-247, 3 Pins
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 220
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 3
Kollektorstrom: 60
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH30N60C3D1IXYSDescription: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)
1+541.07 грн
30+ 415.58 грн
120+ 371.84 грн
510+ 307.91 грн
1020+ 277.12 грн
IXGH30N60C3D1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diod
на замовлення 489 шт:
термін постачання 21-30 дні (днів)
1+450.26 грн
10+ 414.03 грн
30+ 359.36 грн
IXGH30N60C3D1LITTELFUSEDescription: LITTELFUSE - IXGH30N60C3D1 - IGBT, 60 A, 2.6 V, 220 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.6V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 220W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 60A
SVHC: No SVHC (17-Jan-2022)
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
2+563.34 грн
5+ 523.1 грн
10+ 482.86 грн
50+ 411.01 грн
100+ 344.9 грн
250+ 337.88 грн
Мінімальне замовлення: 2
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3D1
Код товару: 164623		Транзистори > IGBT
товар відсутній
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
2+342.92 грн
10+ 327.57 грн
25+ 320.58 грн
Мінімальне замовлення: 2
IXGH30N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH31N60IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH31N60IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
товар відсутній
IXGH31N60D1IXYSDescription: IGBT 600V 60A 150W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/400ns
Switching Energy: 6mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGH31N60D1IXYSIGBT Transistors 60 Amps 600V 1.7 Rds
товар відсутній
IXGH31N60U1IXYSIGBT Transistors
товар відсутній
IXGH32N100A3IXYSDescription: IGBT 1000V 75A 300W TO247AD
товар відсутній
IXGH32N120A3IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 89 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
1+706.33 грн
30+ 543.08 грн
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
2+463.31 грн
10+ 432.81 грн
25+ 413.24 грн
50+ 394.46 грн
100+ 329.85 грн
Мінімальне замовлення: 2
IXGH32N120A3IXYSIGBT Transistors 32 Amps 1200V
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+767.22 грн
10+ 648.55 грн
30+ 511.48 грн
120+ 469.63 грн
270+ 455.68 грн
IXGH32N120A3LittelfuseTrans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
кількість в упаковці: 1 шт
товар відсутній
IXGH32N120A3LITTELFUSEDescription: LITTELFUSE - IXGH32N120A3 - IGBT, 75 A, 2.35 V, 300 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.35V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
2+725.04 грн
5+ 652.02 грн
10+ 578.25 грн
50+ 509.26 грн
100+ 443.9 грн
250+ 434.96 грн
Мінімальне замовлення: 2
IXGH32N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
товар відсутній
IXGH32N170IXYSDescription: IGBT 1700V 75A 350W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+1539.85 грн
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170IXYSIGBT Transistors 72 Amps 1700 V 3.3 V Rds
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+1527.46 грн
10+ 1439.95 грн
30+ 1146.51 грн
60+ 1107.32 грн
120+ 1080.08 грн
270+ 1032.26 грн
510+ 976.46 грн
IXGH32N170LittelfuseTrans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170
Код товару: 140302		Різні комплектуючі > Різні комплектуючі 3
товар відсутній
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+1470.95 грн
2+ 1340.81 грн
IXGH32N170IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH32N170 - IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.5
MSL: MSL 1 - unbegrenzt
Verlustleistung: 350
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.7
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXGH32N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1225.79 грн
2+ 1075.96 грн
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
товар відсутній
IXGH32N170AIXYSDescription: IGBT 1700V 32A 350W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
товар відсутній
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170AIXYSIGBT Transistors VRY HI VOLT NPT IGBT 1700V, 72A
на замовлення 300 шт:
термін постачання 301-310 дні (днів)
1+1755.3 грн
IXGH32N170ALittelfuseTrans IGBT Chip N-CH 1700V 32A 350000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH32N170A
Код товару: 129525		Транзистори > IGBT
Корпус: TO-247
Vces: 1700 V
Vce: 5 V
Ic 25: 32 A
Ic 100: 21 A
td(on)/td(off) 100-150 град: 46/260
товар відсутній
IXGH32N170AIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH32N60AIXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGH32N60AU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/120ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60AU1IXYSIGBT Transistors 32 Amps 600V
товар відсутній
IXGH32N60BIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 800µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 125 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60BIXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGH32N60BD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60BU1IXYSIGBT Transistors 60 Amps 600V 2.3 Rds
товар відсутній
IXGH32N60BU1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 600µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CIXYSIGBT Transistors 60 Amps 600V 2.5 Rds
товар відсутній
IXGH32N60CIXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CD1IXYSIGBT Transistors 60 Amps 600V 2.5 Rds
товар відсутній
IXGH32N60CD1IXYSDescription: IGBT 600V 60A 200W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/85ns
Switching Energy: 320µJ (off)
Test Condition: 480V, 32A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
товар відсутній
IXGH32N60CD1IXYSMODULE
на замовлення 59 шт:
термін постачання 14-28 дні (днів)
IXGH32N60CD1 (IGBT-транзистор)
Код товару: 49455		Різні комплектуючі > Різні комплектуючі 2
товар відсутній
IXGH32N90B2IXYSIGBT Transistors 32 Amps 900V 2.7 Rds
товар відсутній
IXGH32N90B2IXYSDescription: IGBT 900V 64A 300W TO247
товар відсутній
IXGH32N90B2D1IXYSIGBT Transistors 32 Amps 900V 2.7 Rds
товар відсутній
IXGH32N90B2D1IXYSDescription: IGBT 900V 64A 300W TO247
товар відсутній
IXGH34N60B2IXYSDescription: IGBT 600V 70A 190W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 13ns/150ns
Switching Energy: 640µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 190 W
товар відсутній
IXGH35N120BIXYSDescription: IGBT 1200V 70A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
IXGH35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 Rds
товар відсутній
IXGH35N120CIXYSDescription: IGBT 1200V 70A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
товар відсутній
IXGH35N120CIXYSMODULE
на замовлення 86 шт:
термін постачання 14-28 дні (днів)
IXGH35N120C транзистор IGBT
Код товару: 109599		Транзистори > IGBT
товар відсутній
IXGH36N60A3IXYSIGBT Transistors GenX3 600V IGBTs
товар відсутній
IXGH36N60A3IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGH36N60A3D4IXYSIGBT Transistors 36 Amps 600V 2 Rds
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
IXGH36N60A3D4IXYSDescription: IGBT 600V 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 3 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
товар відсутній
IXGH36N60B3LittelfuseTrans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH36N60B3IXYSIGBT Transistors GenX3 600V IGBTs
на замовлення 1049 шт:
термін постачання 21-30 дні (днів)
1+484.35 грн
30+ 378.13 грн
120+ 281.65 грн
510+ 250.43 грн
1020+ 221.86 грн
2520+ 203.93 грн
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 299 шт:
термін постачання 7-14 дні (днів)
1+445.31 грн
3+ 386.29 грн
4+ 283.14 грн
10+ 267.36 грн
IXGH36N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
2+371.09 грн
3+ 309.99 грн
4+ 235.95 грн
10+ 222.8 грн
Мінімальне замовлення: 2
IXGH36N60B3LITTELFUSEDescription: LITTELFUSE - IXGH36N60B3 - TRANSISTOR, IGBT, 600V, 92A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 250
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 92
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.5
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH36N60B3IXYSDescription: IGBT 600V 92A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3C1IXYSIGBT Transistors 75Amps 600V
товар відсутній
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+2699.49 грн
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)
1+3562.47 грн
IXGH36N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2968.72 грн
IXGH36N60B3C1IXYSDescription: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH36N60B3D1IXYSDescription: IGBT 600V 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH36N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 36A 250000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH36N60B3D1IXYSIGBT Transistors 36 Amps 600V
товар відсутній
IXGH36N60B3D4IXYSIGBT Transistors 200 Amps 600V
товар відсутній
IXGH36N60B3D4IXYSDescription: IGBT 600V 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH38N60IXYSDescription: IGBT 600V 76A 200W TO247AD
товар відсутній
IXGH38N60U1IXYSDescription: IGBT 600V 76A 200W TO247AD
товар відсутній
IXGH39N60BIXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH39N60BD1IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/250ns
Switching Energy: 4mJ (off)
Test Condition: 480V, 39A, 4.7Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH39N60BD1
Код товару: 25259		Транзистори > IGBT
товар відсутній
IXGH39N60BD1
на замовлення 20 шт:
термін постачання 14-28 дні (днів)
IXGH40N120A2LittelfuseTrans IGBT Chip N-CH 1200V 75A 360000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120A2IXYSDescription: IGBT 1200V 75A 360W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/420ns
Switching Energy: 15mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 360 W
товар відсутній
IXGH40N120A2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 2.3µs
товар відсутній
IXGH40N120A2IXYSIGBT Transistors SGL IGBT 1200V, 80A
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
1+1062.48 грн
10+ 922.79 грн
30+ 728.03 грн
60+ 703.45 грн
120+ 701.46 грн
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120B2D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/290ns
Switching Energy: 4.5mJ (on), 3mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
1+1300.57 грн
30+ 1013.99 грн
120+ 954.34 грн
510+ 811.65 грн
IXGH40N120B2D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120B2D1 - IGBT, 75 A, 2.9 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 2.9
MSL: MSL 1 - unbegrenzt
Verlustleistung: 380
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 75
SVHC: No SVHC (07-Jul-2017)
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+877.05 грн
5+ 859.17 грн
10+ 842.03 грн
50+ 765.28 грн
100+ 691.72 грн
IXGH40N120B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Turn-on time: 79ns
Turn-off time: 770ns
товар відсутній
IXGH40N120B2D1IXYSIGBT Transistors IGBT, Diode 1200V, 75A
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+1412.77 грн
10+ 1226.82 грн
30+ 1009.67 грн
60+ 979.78 грн
120+ 921.99 грн
270+ 894.09 грн
510+ 842.28 грн
IXGH40N120B2D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
товар відсутній
IXGH40N120C3IXYSIGBT Transistors 75Amps 1200V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+833.87 грн
10+ 724.94 грн
30+ 613.11 грн
60+ 577.9 грн
120+ 557.98 грн
IXGH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 380W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120C3IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+566.5 грн
Мінімальне замовлення: 300
IXGH40N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH40N120C3D1 - IGBT, 75 A, 4.4 V, 380 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 4.4V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
1+933.69 грн
5+ 845.01 грн
10+ 755.59 грн
50+ 680.86 грн
100+ 609.33 грн
IXGH40N120C3D1
Код товару: 182236		Різні комплектуючі > Різні комплектуючі 1
товар відсутній
IXGH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
кількість в упаковці: 1 шт
товар відсутній
IXGH40N120C3D1IXYSDescription: IGBT 1200V 75A 380W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/130ns
Switching Energy: 1.8mJ (on), 550µJ (off)
Test Condition: 600V, 30A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 380 W
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+928.36 грн
30+ 723.37 грн
120+ 680.83 грн
IXGH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 475ns
товар відсутній
IXGH40N120C3D1IXYSIGBT Transistors 75Amps 1200V
на замовлення 436 шт:
термін постачання 21-30 дні (днів)
1+1008.23 грн
10+ 876.19 грн
30+ 700.13 грн
60+ 698.8 грн
120+ 682.19 грн
IXGH40N30BD1IXYSMODULE
на замовлення 44 шт:
термін постачання 14-28 дні (днів)
IXGH40N60IXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60IXYSIGBT Transistors G-series
товар відсутній
IXGH40N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60AIXYSIGBT Transistors G-series
товар відсутній
IXGH40N60A3D1IXYSDescription: IGBT 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGH40N60A3D1IXYSMOSFET 40 Amps 600V 1.25 Rds
товар відсутній
IXGH40N60A3D1Littelfuse- TO-247
товар відсутній
IXGH40N60BIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 2.7mJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60B2IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60B2D1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/130ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 30A, 3.3Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60B2D1IXYSIGBT Transistors 40 Amps 600V 1.7 V Rds
товар відсутній
IXGH40N60B2D1
Код товару: 67024		Транзистори > IGBT
товар відсутній
IXGH40N60CIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/100ns
Switching Energy: 850µJ (off)
Test Condition: 480V, 40A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGH40N60CIXYSIGBT Transistors 75 Amps 600V 2.5 Rds
товар відсутній
IXGH40N60C2IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60C2IXYSIGBT Transistors 40 Amps 600V 2.7 V Rds
товар відсутній
IXGH40N60C2
Код товару: 30177		Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 75 A
Ic 100: 40 A
товар відсутній
IXGH40N60C2
на замовлення 17 шт:
термін постачання 14-28 дні (днів)
IXGH40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH40N60C2D1IXYSIGBT Transistors 75 Amps 600V 2.7 V Rds
товар відсутній
IXGH41N60IXYSDescription: IGBT 600V 76A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/600ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 41A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 152 A
Power - Max: 200 W
товар відсутній
IXGH42N30C3IXYSIGBT Transistors 42 Amps 300V
товар відсутній
IXGH42N30C3IXYSDescription: IGBT 300V 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/113ns
Switching Energy: 120µJ (on), 150µJ (off)
Test Condition: 200V, 21A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 223 W
товар відсутній
IXGH45N120IXYSDescription: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3IXYSIGBT Transistors 75 Amps 600V 1.05 V Rds
на замовлення 543 шт:
термін постачання 21-30 дні (днів)
1+499.08 грн
10+ 422.43 грн
30+ 332.79 грн
120+ 305.56 грн
270+ 274.34 грн
510+ 249.76 грн
1020+ 231.16 грн
IXGH48N60A3IXYSDescription: IGBT 600V 120A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)
1+459.87 грн
30+ 353.6 грн
120+ 316.39 грн
510+ 261.99 грн
1020+ 235.79 грн
2010+ 220.94 грн
IXGH48N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3LITTELFUSEDescription: LITTELFUSE - IXGH48N60A3 - TRANSISTOR, IGBT, 600V, 120A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 120
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.18
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH48N60A3
Код товару: 133424		Транзистори > IGBT
товар відсутній
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
товар відсутній
IXGH48N60A3D1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
товар відсутній
IXGH48N60A3D1IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
1+643.1 грн
30+ 494.18 грн
120+ 442.15 грн
IXGH48N60A3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
IXGH48N60A3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3IXYSIGBT Modules 48 Amps 600V
товар відсутній
IXGH48N60B3IXYSDescription: IGBT 600V 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)
1+1639.95 грн
IXGH48N60B3C1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1366.63 грн
IXGH48N60B3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3C1IXYSIGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
товар відсутній
IXGH48N60B3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
1+610.29 грн
3+ 395.1 грн
6+ 373.65 грн
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3D1LITTELFUSEDescription: LITTELFUSE - IXGH48N60B3D1 - TRANSISTOR, IGBT, 600V, 48A, TO-247
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 48
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 1.8
Betriebstemperatur, max.: 150
Produktpalette: GenX3 Series
SVHC: To Be Advised
товар відсутній
IXGH48N60B3D1IXYSIGBT Transistors 75 Amps 600V 1.05 V Rds
на замовлення 669 шт:
термін постачання 21-30 дні (днів)
1+712.97 грн
10+ 676.05 грн
30+ 477.6 грн
120+ 436.42 грн
270+ 426.45 грн
510+ 384.61 грн
1020+ 333.46 грн
IXGH48N60B3D1IXYSDescription: IGBT 600V 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXGH48N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60B3D1Ixys CorporationTrans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
30+645.81 грн
60+ 601.76 грн
120+ 568.37 грн
180+ 523.08 грн
Мінімальне замовлення: 30
IXGH48N60B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 7-14 дні (днів)
1+732.34 грн
3+ 492.35 грн
6+ 448.37 грн
IXGH48N60C3IXYSIGBT Transistors 48 Amps 600V
товар відсутній
IXGH48N60C3IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3
Код товару: 155510		Транзистори > IGBT
товар відсутній
IXGH48N60C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 300
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 75
Bauform - Transistor: TO-247
Kollektor-Emitter-Sättigungsspannung: 2.3
Betriebstemperatur, max.: 150
Produktpalette: GenX3
SVHC: No SVHC (16-Jan-2020)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
IXGH48N60C3C1IXYSIGBT Transistors 75Amps 600V
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
IXGH48N60C3C1IXYSDescription: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3C1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH48N60C3D1
Код товару: 108583		Транзистори > IGBT
товар відсутній
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
IXGH48N60C3D1IXYSIGBT Transistors 30 Amps 600V
на замовлення 1260 шт:
термін постачання 308-317 дні (днів)
1+698.25 грн
10+ 681.4 грн
30+ 472.95 грн
IXGH48N60C3D1IXYSDescription: IGBT PT 600V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH48N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH48N60C3D1 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.3V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: No SVHC (17-Jan-2023)
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
2+671.39 грн
10+ 606.56 грн
30+ 502.24 грн
120+ 435.92 грн
Мінімальне замовлення: 2
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)
1+687.63 грн
3+ 475.1 грн
6+ 432.6 грн
IXGH48N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+682.09 грн
10+ 586.31 грн
IXGH48N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+573.03 грн
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGH4N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXGH4N250CIXYSIGBT Modules High Voltage IGBTs
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
IXGH4N250CIXYSDescription: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
товар відсутній
IXGH50N120C3IXYSIGBT Transistors 75Amps 1200V
товар відсутній
IXGH50N120C3IXYSDescription: IGBT 1200V 75A 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/123ns
Switching Energy: 2.2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 460 W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+1087.16 грн
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
IXGH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 460mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
товар відсутній
IXGH50N60AIXYSDescription: IGBT 600V 75A 250W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGH50N60BIXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH50N60B2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGH50N60C2IXYSDescription: IGBT 600V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 400 W
товар відсутній
IXGH50N60C4IXYSDescription: IGBT 600V 90A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/270ns
Switching Energy: 950µJ (on), 840µJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 113 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 300 W
товар відсутній
IXGH50N90B2IXYSIGBT Transistors 50 Amps 900V 2.7 Rds
товар відсутній
IXGH50N90B2IXYSDescription: IGBT 900V 75A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
на замовлення 179 шт:
термін постачання 7-14 дні (днів)
1+679.59 грн
3+ 469.93 грн
6+ 427.62 грн
IXGH50N90B2IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
1+566.32 грн
3+ 377.1 грн
6+ 356.35 грн
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH50N90B2D1LITTELFUSEDescription: LITTELFUSE - IXGH50N90B2D1 - IGBT, 75 A, 2.2 V, 400 W, 900 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 400W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: HiPerFAST Series
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
SVHC: Boric acid (14-Jun-2023)
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
2+726.53 грн
5+ 657.98 грн
10+ 589.42 грн
50+ 531.41 грн
100+ 475.2 грн
250+ 465.62 грн
Мінімальне замовлення: 2
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
товар відсутній
IXGH50N90B2D1LittelfuseTrans IGBT Chip N-CH 900V 75A 400W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH50N90B2D1IXYSIGBT Transistors 50 Amps 900V 2.7 Rds
на замовлення 258 шт:
термін постачання 21-30 дні (днів)
1+769.54 грн
10+ 669.17 грн
30+ 503.51 грн
60+ 502.18 грн
510+ 455.02 грн
1020+ 417.82 грн
IXGH50N90B2D1IXYSDescription: IGBT PT 900V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+708.49 грн
30+ 552.53 грн
120+ 520.03 грн
IXGH50N90B2D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
кількість в упаковці: 1 шт
товар відсутній
IXGH56N60A3IXYSIGBT Modules GenX3 600V IGBTs
товар відсутній
IXGH56N60A3IXYSDescription: IGBT 600V 150A 330W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
товар відсутній
IXGH56N60A3LittelfuseTrans IGBT Chip N-CH 600V 150A 330000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH56N60B3IXYSIGBT Transistors Disc IGBT PT-Mid Frequency TO-247AD
товар відсутній
IXGH56N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-24
товар відсутній
IXGH56N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 56A 330000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH56N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGH56N60B3D1IXYSDescription: IGBT 600V 330W TO247
товар відсутній
IXGH60N30C3IXYSIGBT Transistors 60 Amps 300V
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
IXGH60N30C3IXYSDescription: IGBT 300V 75A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/108ns
Switching Energy: 150µJ (on), 300µJ (off)
Test Condition: 200V, 30A, 5Ohm, 15V
Gate Charge: 101 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 300 W
товар відсутній
IXGH60N30C3LittelfuseTrans IGBT Chip N-CH 300V 75A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60IXYSIGBT Transistors HIGH SPEED IGBT N-CHAN 600V 75A
товар відсутній
IXGH60N60IXYSDescription: IGBT 600V 75A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGH60N60B2IXYSDescription: IGBT 600V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
IXGH60N60C2IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
товар відсутній
IXGH60N60C2
Код товару: 30178		Транзистори > IGBT
Корпус: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 75 A
Ic 100: 60 A
Pd 25: 480 W
товар відсутній
IXGH60N60C2IXYSDescription: IGBT 600V 75A 480W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGH60N60C3
Код товару: 113398		Транзистори > IGBT
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 380 W
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
товар відсутній
IXGH60N60C3IXYSIGBT Transistors GenX3 600V IGBT
товар відсутній
IXGH60N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH60N60C3D1IXYSDescription: IGBT 600V 75A 380W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/70ns
Switching Energy: 800µJ (on), 450µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 380 W
товар відсутній
IXGH60N60C3D1LittelfuseTrans IGBT Chip N-CH 600V 75A 380W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
на замовлення 271 шт:
термін постачання 21-30 дні (днів)
1+639.35 грн
2+ 425.54 грн
6+ 402.01 грн
IXGH60N60C3D1IXYSIGBT Modules 60 Amps 600V
на замовлення 1412 шт:
термін постачання 21-30 дні (днів)
1+792.79 грн
10+ 669.94 грн
30+ 479.59 грн
IXGH60N60C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
кількість в упаковці: 1 шт
на замовлення 271 шт:
термін постачання 7-14 дні (днів)
1+767.22 грн
2+ 530.29 грн
6+ 482.42 грн
IXGH60N60C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGH60N60C3D1 - IGBT, 75 A, 2.2 V, 380 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 380W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: GenX3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 75A
товар відсутній
IXGH60N60C3D1
Код товару: 148221		Транзистори > IGBT
товар відсутній
IXGH64N60A3LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGH64N60A3IXYSDescription: IGBT 600V 460W TO247
товар відсутній
IXGH64N60A3IXYSIGBT Modules GenX3 600V IGBTs
товар відсутній
IXGH64N60B3IXYSDescription: IGBT 600V 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGH64N60B3IXYSIGBT Modules GenX3 600V IGBTs
товар відсутній
IXGH6N170IXYSIXGH6N170 THT IGBT transistors
товар відсутній
IXGH6N170IXYSIGBT Transistors 12 Amps 1700 V 4 V Rds
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+969.48 грн
10+ 878.48 грн
30+ 732.01 грн
120+ 644.99 грн
510+ 573.92 грн
1020+ 541.37 грн
2520+ 522.77 грн
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170LittelfuseTrans IGBT Chip N-CH 1700V 6A 75mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170IXYSDescription: IGBT 1700V 12A 75W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/250ns
Switching Energy: 1.5mJ (off)
Test Condition: 1360V, 6A, 33Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 75 W
товар відсутній
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH6N170AIXYSDescription: IGBT 1700V 6A 75W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 590µJ (on), 180µJ (off)
Test Condition: 850V, 6A, 33Ohm, 15V
Gate Charge: 18.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 14 A
Power - Max: 75 W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+956.39 грн
IXGH6N170AIXYSIXGH6N170A THT IGBT transistors
товар відсутній
IXGH6N170AIXYSIGBT Transistors 12 Amps 1700 V 7 V Rds
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
1+969.48 грн
10+ 878.48 грн
30+ 732.01 грн
120+ 644.99 грн
IXGH6N170ALittelfuseTrans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
на замовлення 235 шт:
термін постачання 7-14 дні (днів)
1+865.58 грн
2+ 568.23 грн
5+ 517.29 грн
IXGH72N60A3IXYSIGBT Transistors 72 Amps 600V 1.35 Rds
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
1+826.12 грн
10+ 697.44 грн
30+ 550.67 грн
120+ 506.16 грн
270+ 475.61 грн
510+ 445.72 грн
1020+ 417.82 грн
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 78A 540000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 235 шт:
термін постачання 21-30 дні (днів)
1+721.32 грн
2+ 455.99 грн
5+ 431.08 грн
IXGH72N60A3LittelfuseTrans IGBT Chip N-CH 600V 78A 540mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60A3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+758.79 грн
10+ 660.24 грн
IXGH72N60B3IXYSDescription: IGBT 600V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/150ns
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGH72N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 540000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXGH72N60C3IXYSDescription: IGBT 600V 75A 540W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 174 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 540 W
товар відсутній
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
IXGH72N60C3LittelfuseTrans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247
товар відсутній
IXGH72N60C3
Код товару: 73163		Транзистори > IGBT
товар відсутній
IXGH72N60C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
кількість в упаковці: 1 шт
товар відсутній
IXGH72N60C3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A
товар відсутній
IXGH85N30C3IXYSIGBT Transistors 85 Amps 300V
товар відсутній
IXGH85N30C3IXYSDescription: IGBT 300V 75A 333W TO247AD
товар відсутній
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
товар відсутній
IXGH90N60B3IXYSDescription: IGBT 600V 75A 660W TO247
товар відсутній
IXGH90N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 660W; TO247
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 660W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 220ns
товар відсутній
IXGH90N60B3LittelfuseTrans IGBT Chip N-CH 600V 75A 660000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXGI48N60C3IXYSLittelfuse
товар відсутній
IXGJ40N60C2D1IXYSIGBT Transistors 40 Amps 600V 2.7 V Rds
товар відсутній
IXGJ40N60C2D1IXYSDescription: IGBT 600V 75A 300W TO268
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/90ns
Switching Energy: 200µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK 50N60A2D1IXYSLittelfuse
товар відсутній
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 7-14 дні (днів)
1+2755.9 грн
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK100N170LittelfuseTrans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK100N170IXYSDescription: IGBT PT 1000V 120A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+2830.36 грн
IXGK100N170IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+2296.59 грн
IXGK100N170IXYSIGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3076.62 грн
10+ 2682.04 грн
IXGK120N120A3IXYSDescription: IGBT PT 1200V 240A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
1+2496.24 грн
25+ 1992.75 грн
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
IXGK120N120A3IXYSIGBT Transistors 120 Amps 1200V
товар відсутній
IXGK120N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK120N120A3LittelfuseTrans IGBT Chip N-CH 1200V 240A 830000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK120N120B3IXYSIGBT Transistors 200Amps 1200V
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+2613.19 грн
10+ 2288.63 грн
25+ 1856.6 грн
50+ 1824.05 грн
100+ 1792.17 грн
250+ 1782.87 грн
500+ 1741.68 грн
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
кількість в упаковці: 1 шт
товар відсутній
IXGK120N120B3IXYSDescription: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
300+1745.05 грн
Мінімальне замовлення: 300
IXGK120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
товар відсутній
IXGK120N60BIXYSDescription: IGBT 600V 200A 660W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/200ns
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Test Condition: 480V, 100A, 2.4Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 660 W
товар відсутній
IXGK120N60B3IXYSDescription: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
IXGK120N60C2IXYSDescription: IGBT 600V 75A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/120ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 370 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 830 W
товар відсутній
IXGK28N140B3H1IXYSDescription: IGBT 1400V 60A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXGK28N140B3H1IXYSIGBT Transistors 28 Amps 1400V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
IXGK28N140B3H1
на замовлення 2500 шт:
термін постачання 14-28 дні (днів)
IXGK300N60B3IXYSIGBT Modules 300 Amps 600V 1.6 Rds
товар відсутній
IXGK300N60B3IXYSDescription: IGBT 600V 1000W TO264AA
Packaging: Tube
товар відсутній
IXGK320N60A3IXYSDescription: IGBT 600V 320A 1000W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1000 W
товар відсутній
IXGK320N60A3IXYSIGBT Transistors 320 Amps 600V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
IXGK320N60B3LittelfuseTrans IGBT Chip N-CH 600V 500A 1700000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
товар відсутній
IXGK320N60B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товар відсутній
IXGK320N60B3IXYSIGBT Modules GenX3 600V IGBTs
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
1+2022.67 грн
IXGK320N60B3IXYSDescription: IGBT 600V 500A 1700W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
товар відсутній
IXGK35N120BIXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
товар відсутній
IXGK35N120BIXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK35N120BD1IXYSDescription: IGBT 1200V 70A 350W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/180ns
Switching Energy: 3.8mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK35N120BD1IXYSIGBT Transistors 70 Amps 1200V 3.3 V Rds
товар відсутній
IXGK35N120CD1IXYSIGBT Transistors 70 Amps 1200V 4 V Rds
товар відсутній
IXGK35N120CD1IXYSDescription: IGBT 1200V 70A 350W PLUS247
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 350 W
товар відсутній
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
товар відсутній
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
10+1203.59 грн
Мінімальне замовлення: 10
IXGK400N30A3IXYSDescription: IGBT PT 300V 400A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Gate Charge: 560 nC
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1000 W
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+1694.34 грн
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK400N30A3IXYSIGBT Transistors 400 Amps 300V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1804.12 грн
10+ 1611.82 грн
25+ 1244.16 грн
100+ 1219.58 грн
250+ 1143.85 грн
500+ 1130.57 грн
IXGK400N30A3LittelfuseTrans IGBT Chip N-CH 300V 400A 1000000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK400N30A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 200A
Power dissipation: 1kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 560nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 565ns
кількість в упаковці: 1 шт
товар відсутній
IXGK400N30B3IXYSIGBT Transistors 400 Amps 300V
товар відсутній
IXGK400N30B3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGK400N30C3IXYSIGBT Transistors 400 Amps 300V
товар відсутній
IXGK400N30C3IXYSDescription: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
товар відсутній
IXGK50N120C3H1IXYSDescription: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
кількість в упаковці: 1 шт
товар відсутній
IXGK50N120C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
товар відсутній
IXGK50N120C3H1IXYSIGBT Modules High Frequency Range 40khz C-IGBT w/Diode
товар відсутній
IXGK50N60A2U1IXYSDescription: IGBT 600V 75A 400W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 20ns/410ns
Switching Energy: 3.5mJ (off)
Test Condition: 480V, 50A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK50N60AU1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK50N60AU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60BIXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60B2D1IXYSDescription: IGBT 600V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/190ns
Switching Energy: 550µJ (off)
Test Condition: 480V, 40A, 5Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK50N60BD1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60BU1IXYSIGBT Transistors 75 Amps 600V 2.3 Rds
товар відсутній
IXGK50N60BU1IXYSDescription: IGBT 600V 75A 300W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK50N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/115ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGK50N60C2D1IXYSIGBT Transistors 50 Amps 600V 2.5V Rds
товар відсутній
IXGK50N90B2D1IXYSIGBT Transistors 50 Amps 600V 3 Rds
товар відсутній
IXGK50N90B2D1IXYSDescription: IGBT 900V 75A 400W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/350ns
Switching Energy: 4.7mJ (off)
Test Condition: 720V, 50A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 400 W
товар відсутній
IXGK55N120A3H1IXYSIGBT Modules Low-Frequency Range Low Vcesat w/ Diode
товар відсутній
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
IXGK55N120A3H1IXYSDescription: IGBT 1200V 125A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK55N120A3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
кількість в упаковці: 1 шт
товар відсутній
IXGK60N60IXYSDescription: IGBT 600V 75A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
IXGK60N60B2D1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK60N60B2D1IXYSDescription: IGBT 600V 75A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/160ns
Switching Energy: 1mJ (off)
Test Condition: 400V, 50A, 3.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
товар відсутній
IXGK60N60B2D1IXYSTO-264 09+
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
IXGK60N60C2D1IXYSDescription: IGBT 600V 75A 480W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/95ns
Switching Energy: 400µJ (on), 480µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 146 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 480 W
товар відсутній
IXGK60N60C2D1IXYS
на замовлення 2100 шт:
термін постачання 14-28 дні (днів)
IXGK60N60C2D1IXYSIGBT Transistors 60 Amps 600V 2.5 V Rds
товар відсутній
IXGK64N60B3D1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
IXGK64N60B3D1LittelfuseTrans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXGK64N60B3D1IXYSDescription: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK72N60A3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXGK72N60A3H1IXYSIGBT Transistors 75Amps 600V
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
кількість в упаковці: 1 шт
товар відсутній
IXGK72N60B3H1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGK72N60B3H1LittelfuseTrans IGBT Chip N-CH 600V 178A 540W 3-Pin(3+Tab) TO-264
товар відсутній
IXGK72N60B3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товар відсутній
IXGK72N60B3H1IXYSDescription: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/152ns
Switching Energy: 1.4mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 540 W
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
300+1002.4 грн
Мінімальне замовлення: 300
IXGK72N60C3H1IXYSDescription: IGBT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXGK)
Part Status: Active
товар відсутній
IXGK72N60C3H1IXYSIGBT Transistors 75Amps 600V
товар відсутній
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780W 3-Pin(3+Tab) TO-264AA
товар відсутній
IXGK75N250IXYSDescription: IGBT NPT 2500V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
1+7574.22 грн
25+ 6352.47 грн
100+ 6023.08 грн
IXGK75N250LittelfuseTrans IGBT Chip N-CH 2500V 170A 780000mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
товар відсутній
IXGK75N250IXYSIGBT Transistors IGBT NPT-VERY HI VOLTAGE
на замовлення 436 шт:
термін постачання 21-30 дні (днів)
1+8118.56 грн
10+ 7403.69 грн
25+ 6141.07 грн
50+ 6005.56 грн
100+ 5855.43 грн
IXGK75N250IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 75A
Power dissipation: 780W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Turn-on time: 280ns
Turn-off time: 725ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120A3IXYSIGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
товар відсутній
IXGK82N120A3IXYSDescription: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
товар відсутній
IXGK82N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній
IXGK82N120B3IXYSDescription: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
товар відсутній
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товар відсутній
IXGK82N120B3IXYSIGBT Transistors GenX3 1200V IGBTs
товар відсутній
IXGK82N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
кількість в упаковці: 1 шт
товар відсутній
IXGL200N60B3IXYSIGBT Transistors 150Amps 600V
товар відсутній
IXGL200N60B3IXYSDescription: IGBT 600V 150A 400W ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 400 W
товар відсутній
IXGL50N60BD1IXYSDescription: IGBT 600V ISOPLUS264
товар відсутній
IXGL75N250IXYSDescription: IGBT 2500V 110A 430W I5-PAK
товар відсутній
IXGM17N100AIXYSDescription: POWER MOSFET TO-3
товар відсутній
IXGM20N60IXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM20N60AIXYSDescription: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100AIXYSDescription: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXGM25N100AIXYSTO-3 9352+
на замовлення 70 шт:
термін постачання 14-28 дні (днів)
IXGM40N60IXYSDescription: IGBT 600V 75A 250W TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGM40N60AIXYSDescription: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
IXGM40N60ALIXYSDescription: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
товар відсутній
IXGN100N120IXYSDescription: IGBT MODULE 1200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній
IXGN100N120IXYSIGBT Transistors G-series
товар відсутній
IXGN100N160AIXYSDescription: IGBT MODULE 1600V 200A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
товар відсутній
IXGN100N160AIXYSIGBT Transistors 100 Amps 1600V
товар відсутній
IXGN100N170IXYSDescription: IGBT MOD 1700V 160A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
1+3858.6 грн
10+ 3377.54 грн
100+ 3039.76 грн
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 95A
Power dissipation: 735W
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 7-14 дні (днів)
1+4110.61 грн
IXGN100N170IXYSIGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+4191.03 грн
10+ 3755.32 грн
20+ 3234.27 грн
50+ 3205.05 грн
100+ 2938.68 грн
200+ 2908.12 грн
500+ 2847.67 грн
IXGN100N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 95A
Power dissipation: 735W
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+3425.51 грн
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
товар відсутній
IXGN100N170LittelfuseTrans IGBT Module N-CH 1700V
товар відсутній
IXGN120N60A3IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
товар відсутній
IXGN120N60A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
товар відсутній
IXGN120N60A3D1LittelfuseTrans IGBT Module N-CH 600V 200A 595000mW
товар відсутній
IXGN120N60A3D1IXYSDescription: IGBT MOD 600V 200A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V
товар відсутній
IXGN120N60A3D1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A
товар відсутній
IXGN200N170LITTELFUSEDescription: LITTELFUSE - IXGN200N170 - IGBT-Modul, Einfach, 280 A, 2.1 V, 1.25 kW, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
Dauer-Kollektorstrom: 280A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.1V
Verlustleistung Pd: 1.25kW
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 1.7kV
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 1.7kV
IGBT-Konfiguration: Einfach
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 280A
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2022)
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+4682.59 грн
10+ 4399.43 грн
30+ 3944.88 грн
IXGN200N170LittelfuseIGBT Module, High Voltage IGBT
товар відсутній
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXGN200N170IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 160A
Power dissipation: 1.25kW
Technology: NPT
Pulsed collector current: 1.05kA
Max. off-state voltage: 1.7kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
товар відсутній
IXGN200N170IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
товар відсутній
IXGN200N170IXYSIGBT Transistors IGBT NPT-HIVOLTAGE (MINI
на замовлення 466 шт:
термін постачання 21-30 дні (днів)
1+4772.25 грн
10+ 4276.29 грн
20+ 3594.3 грн
50+ 3470.08 грн
100+ 3346.53 грн
200+ 3323.28 грн
IXGN200N60IXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IXGN200N60IXYSIGBT Transistors 200 Amps 600V
товар відсутній
IXGN200N60AIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
IXGN200N60AIXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN200N60AIXYSMODULE
на замовлення 150 шт:
термін постачання 14-28 дні (днів)
IXGN200N60A2IXYSDescription: IGBT MOD 600V 200A 700W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
товар відсутній
IXGN200N60BIXYSMODULE
на замовлення 268 шт:
термін постачання 14-28 дні (днів)
IXGN200N60BIXYSDescription: IGBT MOD 600V 200A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
IXGN200N60BIXYSTO220
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3
Код товару: 176713		Транзистори > IGBT
товар відсутній
IXGN200N60B3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
1+3131.64 грн
10+ 2750.79 грн
20+ 2249.18 грн
50+ 2174.78 грн
100+ 2099.06 грн
200+ 2024.66 грн
500+ 2017.35 грн
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 830W
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2342.04 грн
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
товар відсутній
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 830W
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)
1+2810.45 грн
IXGN200N60B3IXYSDescription: IGBT MOD 600V 300A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
1+2883.53 грн
10+ 2474.43 грн
100+ 2171.9 грн
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
товар відсутній
IXGN200N60B3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXGN200N60B3 - IGBT-Modul, Einfach, 300 A, 1.35 V, 830 W, 150 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: Y-EX
IGBT-Technologie: PT IGBT [Standard]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.35V
Dauer-Kollektorstrom: 300A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35V
Verlustleistung Pd: 830W
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Anzahl der Pins: 4Pin(s)
Produktpalette: IGBT Module GenX3
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Einfach
productTraceability: No
Wandlerpolarität: n-Kanal
DC-Kollektorstrom: 300A
Betriebstemperatur, max.: 150°C
SVHC: Lead (17-Jan-2023)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+3073.05 грн
IXGN200N60B3LittelfuseTrans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
IXGN20N90
Код товару: 104856		Транзистори > IGBT
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735000mW 4-Pin SOT-227B
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3IXYSDescription: IGBT MOD 600V 320A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 1405 шт:
термін постачання 21-31 дні (днів)
1+2400.67 грн
10+ 2059.55 грн
100+ 1807.77 грн
IXGN320N60A3LITTELFUSEDescription: LITTELFUSE - IXGN320N60A3 - TRANSISTOR, IGBT, 600V, 320A, SOT-227B
tariffCode: 85412900
Transistormontage: Panel
rohsCompliant: YES
IGBT-Technologie: -
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.46V
Dauer-Kollektorstrom: 320A
usEccn: EAR99
IGBT-Anschluss: Tab
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.46V
Verlustleistung Pd: 735W
euEccn: NLR
Verlustleistung: 735W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 600V
Produktpalette: GenX3 Series
Kollektor-Emitter-Spannung, max.: 600V
IGBT-Konfiguration: Single
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 320A
Betriebstemperatur, max.: 150°C
directShipCharge: 25
SVHC: To Be Advised
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+2825.65 грн
5+ 2730.27 грн
10+ 2635.64 грн
25+ 2286.15 грн
IXGN320N60A3IXYSIGBT Transistors 320 Amps 600V
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
1+2586.07 грн
10+ 2289.4 грн
20+ 1945.61 грн
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN320N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Technology: GenX3™; PT
Collector current: 170A
Power dissipation: 735W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN320N60A3LittelfuseTrans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B
товар відсутній
IXGN400N30A3IXYSIGBT Transistors 400 Amps 300V 1.15 V Rds
товар відсутній
IXGN400N30A3LittelfuseTrans IGBT Module N-CH 300V 400A 735000mW
товар відсутній
IXGN400N30A3IXYSDescription: IGBT MOD 300V 400A 735W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 735 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
товар відсутній
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
товар відсутній
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN400N60A3LittelfuseTrans IGBT Module N-CH 600V
товар відсутній
IXGN400N60A3IXYSDescription: IGBT MOD 600V 400A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 32 nF @ 25 V
товар відсутній
IXGN400N60A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Technology: GenX3™; PT
Collector current: 190A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN400N60A3IXYSIGBT Transistors 400 Amps 600V
на замовлення 314 шт:
термін постачання 21-30 дні (днів)
1+3695.82 грн
10+ 3042.6 грн
20+ 2548.76 грн
50+ 2498.27 грн
100+ 2487.65 грн
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Technology: GenX3™; PT
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
товар відсутній
IXGN400N60B3IXYSDescription: IGBT MOD 600V 430A 1000W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
1+3311.07 грн
10+ 2840.88 грн
100+ 2493.56 грн
IXGN400N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Technology: GenX3™; PT
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Type of module: IGBT
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXGN400N60B3IXYSIGBT Modules Mid-Frequency Range PT IGBTs
на замовлення 121 шт:
термін постачання 21-30 дні (днів)
1+3595.85 грн
10+ 3157.95 грн
20+ 2582.64 грн
50+ 2496.28 грн
100+ 2410.59 грн
200+ 2371.4 грн
IXGN400N60B3LittelfuseTrans IGBT Module N-CH 600V 430A 1000000mW 4-Pin SOT-227B
товар відсутній
IXGN40N60CD1IXYSDescription: IGBT MODULE 600V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
1+2569.02 грн
2+ 2341.89 грн
IXGN50N120C3H1IXYSIGBT Modules High Frequency Range >40khz CIGBT w/Diode
товар відсутній
IXGN50N120C3H1IXYSDescription: IGBT MOD 1200V 95A 460W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товар відсутній
IXGN50N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 95A 460000mW 4-Pin SOT-227B
товар відсутній
IXGN50N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+2140.85 грн
2+ 1879.3 грн
IXGN50N60BIXYSDescription: IGBT MOD 600V 75A 300W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD2IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD3IXYSDescription: IGBT MOD 600V 75A 250W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
товар відсутній
IXGN50N60BD3IXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN50N60BD3ABB07+;
на замовлення 500 шт:
термін постачання 14-28 дні (днів)
IXGN50N60BD3IXYSMODULE
на замовлення 80 шт:
термін постачання 14-28 дні (днів)
IXGN60N60IXYS
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
IXGN60N60
Код товару: 173038		Транзистори > IGBT
товар відсутній
IXGN60N60ABB07+;
на замовлення 500 шт:
термін постачання 14-28 дні (днів)
IXGN60N60IXYSIGBT Transistors ULTRA LOW VCE 600V 100A
товар відсутній
IXGN60N60IXYSDescription: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN60N60C2IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
товар відсутній
IXGN60N60C2IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN60N60C2IXYS60A/600V/IGBT/1U
на замовлення 58 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2D1IXYSSOP8
на замовлення 20000 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2D1IXYS60A/600V/IGBT/1U
на замовлення 59 шт:
термін постачання 14-28 дні (днів)
IXGN60N60C2D1
Код товару: 36189		Транзистори > IGBT
товар відсутній
IXGN60N60C2D1IXYSIGBT Transistors 60 Amps 600V 1.7 V Rds
товар відсутній
IXGN60N60C2D1IXYSDescription: IGBT MOD 600V 75A 480W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 650 µA
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
товар відсутній
IXGN72N60A3LittelfuseTrans IGBT Module N-CH 600V 160A 360000mW
товар відсутній
IXGN72N60A3IXYSIGBT Transistors 72 Amps 600V
товар відсутній
IXGN72N60A3IXYSDescription: IGBT MOD 600V 160A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
IXGN72N60C3H1IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
на замовлення 300 шт:
термін постачання 308-317 дні (днів)
1+2541.12 грн
10+ 2226 грн
100+ 1659.32 грн
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN72N60C3H1IXYSDescription: IGBT MOD 600V 78A 360W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.78 nF @ 25 V
товар відсутній
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN72N60C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXGN72N60C3H1LittelfuseTrans IGBT Module N-CH 600V 78A 360000mW
товар відсутній
IXGN80N60A2IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXGN80N60A2D1IXYSDescription: IGBT MOD 600V 160A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 650 µA
товар відсутній
IXGN82N120B3H1IXYSIGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
товар відсутній
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
товар відсутній
IXGN82N120B3H1IXYSDescription: IGBT MOD 1200V 145A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGN82N120B3H1LittelfuseTrans IGBT Module N-CH 1200V
товар відсутній
IXGN82N120C3H1IXYSIGBT Transistors 130Amps 1200V
товар відсутній
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
товар відсутній
IXGN82N120C3H1
Код товару: 179639		Транзистори > IGBT
товар відсутній
IXGN82N120C3H1IXYSDescription: IGBT MOD 1200V 130A 595W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
товар відсутній
IXGN82N120C3H1LittelfuseTrans IGBT Module N-CH
товар відсутній
IXGP10N60AIXYSDescription: IGBT 600V 20A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 10A
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
IXGP12N100IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N100IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGP12N100AIXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 2.5mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N100AIXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGP12N100AU1IXYSIGBT Transistors 24Amps 1000V
товар відсутній
IXGP12N100AU1IXYSDescription: IGBT 1000V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 100ns/850ns
Switching Energy: 4mJ (off)
Test Condition: 800V, 12A, 120Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N120A2IXYSDescription: IGBT 1200V 24A 75W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/680ns
Switching Energy: 5.4mJ (off)
Test Condition: 960V, 12A, 100Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
товар відсутній
IXGP12N120A3IXYSDescription: IGBT 1200V 22A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Gate Charge: 20.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
товар відсутній
IXGP12N120A3IXYSIGBT Modules GenX3 1200V IGBTs
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
2+303.79 грн
10+ 268.89 грн
100+ 175.36 грн
250+ 170.71 грн
500+ 158.76 грн
1000+ 134.18 грн
2500+ 127.54 грн
Мінімальне замовлення: 2
IXGP12N120A3LittelfuseTrans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
IXGP12N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGP12N60BIXYSDescription: IGBT 600V 24A 100W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/150ns
Switching Energy: 500µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N60CIXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP12N60CD1IXYSDescription: IGBT 600V 24A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/60ns
Switching Energy: 90µJ (off)
Test Condition: 480V, 12A, 18Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 100 W
товар відсутній
IXGP15N100CIXYSIGBT Transistors 30 Amps 1000V 3.5 Rds
товар відсутній
IXGP15N100CIXYSDescription: IGBT 1000V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 850µJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGP15N120BIXYSDescription: IGBT 1200V 30A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
товар відсутній
IXGP15N120CIXYSDescription: IGBT 1200V 30A 200W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 200 W
товар відсутній
IXGP16N60B2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60B2D1
Код товару: 122366		Транзистори > IGBT
товар відсутній
IXGP16N60B2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/73ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 24 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60C2IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP16N60C2IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
товар відсутній
IXGP16N60C2D1IXYSIGBT Transistors 16 Amps 600V 3.0 V Rds
товар відсутній
IXGP16N60C2D1IXYSDescription: IGBT 600V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/75ns
Switching Energy: 160µJ (on), 90µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 150 W
товар відсутній
IXGP20N100IXYSDescription: IGBT 1000V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/350ns
Switching Energy: 3.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGP20N100IXYSIGBT Transistors 40 Amps 1000V 3 Rds
товар відсутній
IXGP20N120Ixys CorporationTrans IGBT Chip N-CH 1200V 40A 150W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120IXYSDescription: IGBT 1200V 40A 150W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/400ns
Switching Energy: 6.5mJ (off)
Test Condition: 800V, 20A, 47Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGP20N120LittelfuseTrans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120IXYSIGBT Transistors 40 Amps 1200V 2.5 Rds
товар відсутній
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120A3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
товар відсутній
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+353.95 грн
3+ 295.46 грн
4+ 235.26 грн
10+ 222.8 грн
Мінімальне замовлення: 2
IXGP20N120A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 7-14 дні (днів)
1+424.74 грн
3+ 368.18 грн
4+ 282.31 грн
10+ 267.36 грн
IXGP20N120A3LittelfuseTrans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXGP20N120A3IXYSDescription: IGBT 1200V 40A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+437.6 грн
IXGP20N120BIXYSDescription: IGBT 1200V 40A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 190 W
товар відсутній
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
2+353.95 грн
3+ 295.46 грн
4+ 235.26 грн
10+ 222.8 грн
Мінімальне замовлення: 2
IXGP20N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 7-14 дні (днів)
1+424.74 грн
3+ 368.18 грн
4+ 282.31 грн
10+ 267.36 грн
IXGP20N120B3LittelfuseTrans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(3+Tab) TO-220
товар відсутній
IXGP20N120B3IXYSIGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
товар відсутній
IXGP20N120B3IXYSDescription: IGBT 1200V 36A 180W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+437.6 грн
IXGP20N120BD1IXYSDescription: IGBT 1200V 40A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 2.1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 190 W
товар відсутній
IXGP20N60BIXYSDescription: IGBT 600V 40A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/150ns
Switching Energy: 150µJ (on), 700µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGP24N120C3LittelfuseTrans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-220
товар відсутній
IXGP24N120C3IXYSIGBT Transistors 24 Amps 1200V
товар відсутній
IXGP24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO220-3
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
товар відсутній
IXGP24N120C3IXYSDescription: IGBT 1200V 48A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/93ns
Switching Energy: 1.16mJ (on), 470µJ (off)
Test Condition: 600V, 20A, 5Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
товар відсутній
IXGP24N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 79nC
Technology: GenX3™; PT
Pulsed collector current: 96A
Type of transistor: IGBT
Turn-on time: 51ns
Case: TO220-3
Turn-off time: 430ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
IXGP24N60CIXYSDescription: IGBT 600V 48A 150W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/75ns
Switching Energy: 240µJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
товар відсутній
IXGP24N60C4IXYSDescription: IGBT 600V 56A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGP24N60C4D1IXYSDescription: IGBT 600V 56A 190W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/192ns
Switching Energy: 350µJ (on), 340µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
товар відсутній
IXGP28N120BIXYSDescription: IGBT 1200V 50A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 2mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товар відсутній
IXGP28N60A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товар відсутній
IXGP28N60A3IXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
товар відсутній
IXGP28N60A3MIXYSDescription: DISC IGBT PT-LOW FREQUENCY TO-22
товар відсутній
IXGP28N60A3MIXYSIGBT Transistors DISC IGBT PT-LOW FREQUENCY
товар відсутній
IXGP2N100IXYSIGBT Transistors 4 Amps 1000V 2.7 Rds
товар відсутній
IXGP2N100IXYSDescription: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 560µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
товар відсутній
IXGP2N100AIXYSDescription: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 260µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
товар відсутній