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WMJ020N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
кількість в упаковці: 1 шт
товар відсутній
WMJ020N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
товар відсутній
WMJ023N08HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
кількість в упаковці: 1 шт
товар відсутній
WMJ023N08HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
товар відсутній
WMJ028N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
кількість в упаковці: 1 шт
товар відсутній
WMJ028N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
товар відсутній
WMJ10N80D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 108 шт:
термін постачання 7-14 дні (днів)
3+101.75 грн
10+ 73.9 грн
19+ 53.97 грн
50+ 50.65 грн
Мінімальне замовлення: 3
WMJ10N80D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
4+110.28 грн
5+ 81.65 грн
10+ 61.58 грн
19+ 44.98 грн
50+ 42.21 грн
Мінімальне замовлення: 4
WMJ11N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 298 шт:
термін постачання 7-14 дні (днів)
1+1048.89 грн
3+ 434.58 грн
7+ 395.23 грн
WMJ11N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+874.07 грн
3+ 348.74 грн
7+ 329.36 грн
WMJ12N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ12N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ15N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 7-14 дні (днів)
1+380.93 грн
3+ 293.17 грн
7+ 156.93 грн
17+ 148.63 грн
WMJ15N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
2+317.44 грн
3+ 235.26 грн
7+ 130.78 грн
Мінімальне замовлення: 2
WMJ18N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 102 шт:
термін постачання 7-14 дні (днів)
3+90.54 грн
10+ 65.6 грн
21+ 47.33 грн
56+ 44.84 грн
Мінімальне замовлення: 3
WMJ18N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 102 шт:
термін постачання 21-30 дні (днів)
4+98.36 грн
5+ 72.65 грн
10+ 54.66 грн
21+ 39.44 грн
56+ 37.36 грн
Мінімальне замовлення: 4
WMJ20N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ20N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ220N20HG3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
кількість в упаковці: 1 шт
товар відсутній
WMJ220N20HG3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
товар відсутній
WMJ25N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 7-14 дні (днів)
3+97.44 грн
10+ 70.58 грн
19+ 50.65 грн
52+ 48.16 грн
Мінімальне замовлення: 3
WMJ25N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 133 шт:
термін постачання 21-30 дні (днів)
4+105.81 грн
5+ 78.19 грн
10+ 58.81 грн
19+ 42.21 грн
52+ 40.13 грн
Мінімальне замовлення: 4
WMJ25N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 7-14 дні (днів)
1+469.45 грн
3+ 362.15 грн
5+ 200.11 грн
14+ 189.31 грн
900+ 186.82 грн
WMJ25N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+391.21 грн
3+ 290.61 грн
5+ 166.76 грн
14+ 157.76 грн
WMJ26N60C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
2+187.04 грн
5+ 156.38 грн
7+ 114.17 грн
20+ 107.94 грн
Мінімальне замовлення: 2
WMJ26N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ26N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
1+374.67 грн
3+ 288.86 грн
7+ 156.93 грн
17+ 148.63 грн
WMJ26N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
2+312.22 грн
3+ 231.8 грн
7+ 130.78 грн
17+ 123.86 грн
Мінімальне замовлення: 2
WMJ26N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ26N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ26N65SRWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ26N65SRWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ28N50C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ28N50C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ28N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ28N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ28N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ28N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ28N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ28N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ30N65EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ30N65EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ36N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ36N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ36N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ36N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ36N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ36N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ38N60C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+474.67 грн
WMJ38N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ38N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ38N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ38N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ38N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ38N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ3N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 287 шт:
термін постачання 21-30 дні (днів)
4+108.79 грн
5+ 80.96 грн
10+ 60.89 грн
20+ 40.82 грн
54+ 38.75 грн
Мінімальне замовлення: 4
WMJ3N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 287 шт:
термін постачання 7-14 дні (днів)
3+100.88 грн
10+ 73.07 грн
20+ 48.99 грн
54+ 46.5 грн
Мінімальне замовлення: 3
WMJ3N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
на замовлення 268 шт:
термін постачання 21-30 дні (днів)
3+118.32 грн
10+ 89.26 грн
13+ 63.66 грн
35+ 60.2 грн
Мінімальне замовлення: 3
WMJ3N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 268 шт:
термін постачання 7-14 дні (днів)
2+192.25 грн
3+ 147.45 грн
10+ 107.11 грн
13+ 76.39 грн
35+ 72.24 грн
Мінімальне замовлення: 2
WMJ40N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+378.54 грн
3+ 280.93 грн
6+ 143.92 грн
16+ 136.31 грн
WMJ40N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 7-14 дні (днів)
1+454.25 грн
3+ 350.08 грн
6+ 172.71 грн
16+ 163.57 грн
WMJ4N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
3+123.86 грн
10+ 92.72 грн
13+ 63.66 грн
35+ 59.51 грн
Мінімальне замовлення: 3
WMJ4N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 7-14 дні (днів)
2+200.3 грн
3+ 154.34 грн
10+ 111.26 грн
13+ 76.39 грн
35+ 71.41 грн
Мінімальне замовлення: 2
WMJ53N60C2
Код товару: 183673		Різні комплектуючі > Різні комплектуючі 1
товар відсутній
WMJ53N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)
1+554.4 грн
3+ 427.68 грн
4+ 265.7 грн
10+ 251.59 грн
300+ 245.78 грн
900+ 241.62 грн
WMJ53N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+462 грн
3+ 343.2 грн
WMJ53N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ53N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ53N60FD-CYG; 53A; 600V; 378W; 0.078R; N-канальный; WMOS™ FD; Корпус: TO-247; WAYON
на замовлення 2 шт:
термін постачання 2-3 дні (днів)
2+351.49 грн
Мінімальне замовлення: 2
WMJ53N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ53N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ53N65F2WAYONWMJ53N65F2-CYG THT N channel transistors
товар відсутній
WMJ53N65FDWAYONWMJ53N65FD-CYG THT N channel transistors
товар відсутній
WMJ60N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ60N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ69N30DMHWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
кількість в упаковці: 1 шт
товар відсутній
WMJ69N30DMHWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT; THT
Kind of package: tube; tube
Type of transistor: N-MOSFET; N-MOSFET
Case: TO247-3; TO247-3
Kind of channel: enhanced; enhanced
Polarisation: unipolar; unipolar
товар відсутній
WMJ80N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
кількість в упаковці: 1 шт
на замовлення 52 шт:
термін постачання 7-14 дні (днів)
1+929.96 грн
3+ 392.33 грн
7+ 357.04 грн
WMJ80N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
1+774.97 грн
3+ 314.83 грн
7+ 297.53 грн
WMJ80N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ80N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ80N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ80N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ80N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ80N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ80N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
на замовлення 165 шт:
термін постачання 7-14 дні (днів)
1+1029.22 грн
3+ 406.99 грн
7+ 370.32 грн
WMJ80N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
на замовлення 165 шт:
термін постачання 21-30 дні (днів)
1+857.68 грн
3+ 326.59 грн
7+ 308.6 грн
WMJ80R160SWAYONWMJ80R160S-CYG THT N channel transistors
товар відсутній
WMJ80R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
WMJ80R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
товар відсутній
WMJ80R350SWAYONWMJ80R350S-CYG THT N channel transistors
на замовлення 298 шт:
термін постачання 7-14 дні (днів)
1+461.4 грн
6+ 185.16 грн
15+ 175.2 грн
WMJ90N60C4WAYONWMJ90N60C4-CYG THT N channel transistors
товар відсутній
WMJ90N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ90N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ90N65C4WAYONWMJ90N65C4-CYG THT N channel transistors
товар відсутній
WMJ90N65F2WAYONWMJ90N65F2-CYG THT N channel transistors
товар відсутній
WMJ90N65SRWAYONWMJ90N65SR-CYG THT N channel transistors
товар відсутній
WMJ90R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO247-3
товар відсутній
WMJ90R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
WMJ90R360SWAYONWMJ90R360S-CYG THT N channel transistors
товар відсутній
WMJ90R500SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ90R500SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ99N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ99N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ99N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMJ99N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WMJ9N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
WMJ9N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товар відсутній
WMJP32N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+366.62 грн
3+ 272.62 грн
6+ 147.38 грн
15+ 139.08 грн
Мінімальне замовлення: 2
WMJP32N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 7-14 дні (днів)
1+439.94 грн
3+ 339.73 грн
6+ 176.86 грн
15+ 166.89 грн