| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PMEG4005AEV,115 | NEXPERIA |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT666; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOT666 Kind of package: reel; tape Max. forward impulse current: 3.5A |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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PMEG4005EGWX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.47V Case: SOD123 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 10A Application: automotive industry |
на замовлення 445 шт: термін постачання 21-30 дні (днів) |
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PMEG4005EH-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.47V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 10A Application: automotive industry |
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PMEG4005EH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 7A |
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PMEG4005EJ,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SC90; SOD323F Kind of package: reel; tape Max. forward impulse current: 7A |
на замовлення 2290 шт: термін постачання 21-30 дні (днів) |
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| PMEG4005EJF | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.47V Case: SC90; SOD323F Kind of package: reel; tape Max. forward impulse current: 10A |
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PMEG4005ET,215 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 3.9A |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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| PMZ600UNELYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| PMZ600UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| PMZ600UNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| PMZB600UNELYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006B-3; SOT883B On-state resistance: 1Ω Mounting: SMD |
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| PMDXB600UNELZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| PMDXB600UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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PMN55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| PMXB65ENEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12.8A Case: DFN1010D-3; SOT1215 Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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PMV37ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Pulsed drain current: 14A Gate charge: 13nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 106mΩ Mounting: SMD |
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PMV50ENEAR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A Pulsed drain current: 5.5A Gate charge: 10nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 69mΩ Mounting: SMD |
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PMEG3050BEP,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 70A |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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BZX84W-B22X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 22V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 22V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-B27-QF | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 27V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 27V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-B36X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 36V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 36V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-B39F | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 39V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 39V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-B5V1F | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Zener voltage: 5.1V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-B5V1X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±2% Case: SC70; SOT323 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Zener voltage: 5.1V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C10-QX | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Zener voltage: 10V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C10X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Zener voltage: 10V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C18X | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 18V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SC70; SOT323 Max. load current: 0.2A Semiconductor structure: single diode Leakage current: 50nA |
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BZX84W-C24-QF | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 24V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C24F | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Zener voltage: 24V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C2V7-QF | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Zener voltage: 2.7V Max. forward voltage: 0.9V Max. load current: 0.2A |
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BZX84W-C2V7F | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.275W Semiconductor structure: single diode Tolerance: ±5% Case: SC70; SOT323 Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Zener voltage: 2.7V Max. forward voltage: 0.9V Max. load current: 0.2A |
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| BUK7675-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 14.3A Pulsed drain current: 81A Power dissipation: 62W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9675-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 14A; Idm: 81A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 14A Pulsed drain current: 81A Power dissipation: 62W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK7K23-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 68A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M23-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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RB751V40-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 0.37V Case: SOD323 Kind of package: reel; tape Leakage current: 0.5µA Max. forward impulse current: 0.2A Power dissipation: 0.28W Application: automotive industry |
на замовлення 2090 шт: термін постачання 21-30 дні (днів) |
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RB751V40,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Capacitance: 2pF Max. forward voltage: 0.37V Case: SOD323 Kind of package: reel; tape Leakage current: 0.5µA Max. forward impulse current: 0.2A Power dissipation: 0.28W |
на замовлення 755 шт: термін постачання 21-30 дні (днів) |
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PDTC144ET,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 1199 шт: термін постачання 21-30 дні (днів) |
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PDTC144ETVL | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 80 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 9775 шт: термін постачання 21-30 дні (днів) |
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PDTC144EU,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 1245 шт: термін постачання 21-30 дні (днів) |
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PDTC144VU,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 40 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 10kΩ |
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PDTC144WT,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
на замовлення 5675 шт: термін постачання 21-30 дні (днів) |
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PDTC144WU,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
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| XC7SH14GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverting,Schmitt trigger; NOT; Ch: 1; IN: 1 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Manufacturer series: Mini Logic Kind of input: with Schmitt trigger Kind of gate: NOT Technology: CMOS Kind of integrated circuit: buffer; inverting; Schmitt trigger Family: XC Case: TSSOP5 Number of inputs: 1 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 1 |
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| BUK72150-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 7A Pulsed drain current: 44A Power dissipation: 36W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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BCX17,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1329 шт: термін постачання 21-30 дні (днів) |
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74LVC1G386GV,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC Manufacturer series: Mini Logic Number of inputs: 3 Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: single; 1 Kind of package: reel; tape Case: SC74A Kind of gate: XOR Technology: CMOS; TTL Family: LVC Supply voltage: 1.65...5.5V DC Mounting: SMD |
товар відсутній |
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74LVC1G386GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC Manufacturer series: Mini Logic Number of inputs: 3 Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: single; 1 Kind of package: reel; tape Case: SC88 Kind of gate: XOR Technology: CMOS; TTL Family: LVC Supply voltage: 1.65...5.5V DC Mounting: SMD |
на замовлення 752 шт: термін постачання 21-30 дні (днів) |
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BCM856BS,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 250mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175MHz |
на замовлення 2174 шт: термін постачання 21-30 дні (днів) |
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BCM856BSH | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 400mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175MHz |
товар відсутній |
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BCM857BS,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250Hz |
на замовлення 2940 шт: термін постачання 21-30 дні (днів) |
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| 74AUP1G132GM,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6 Type of integrated circuit: digital Kind of integrated circuit: Schmitt trigger Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
товар відсутній |
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| 74AUP1G132GN,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6 Type of integrated circuit: digital Kind of integrated circuit: Schmitt trigger Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
товар відсутній |
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| 74AUP1G132GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5 Type of integrated circuit: digital Kind of integrated circuit: Schmitt trigger Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
товар відсутній |
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| 74AUP2G132DC,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8 Type of integrated circuit: digital Case: VSSOP8 Number of inputs: 2 Supply voltage: 0.8...3.6V DC Number of channels: 2 Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: Mini Logic Kind of gate: NAND Technology: CMOS Kind of integrated circuit: Schmitt trigger Family: AUP Mounting: SMD Operating temperature: -40...125°C |
товар відсутній |
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PDTB123TT,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PDTC124TT,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ |
на замовлення 4075 шт: термін постачання 21-30 дні (днів) |
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PUMF11,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 100MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN / PNP |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
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PMMT591A,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Kind of package: reel; tape Polarisation: bipolar Power dissipation: 0.25W Type of transistor: PNP Pulsed collector current: 2A Collector current: 1A Current gain: 300...800 Collector-emitter voltage: 40V Frequency: 150MHz Case: SOT23; TO236AB Mounting: SMD |
на замовлення 2650 шт: термін постачання 21-30 дні (днів) |
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PTVS13VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 1680 шт: термін постачання 21-30 дні (днів) |
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| PMEG4005AEV,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT666; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOT666
Kind of package: reel; tape
Max. forward impulse current: 3.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT666; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOT666
Kind of package: reel; tape
Max. forward impulse current: 3.5A
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| PMEG4005EGWX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SOD123
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 10A
Application: automotive industry
на замовлення 445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.22 грн |
| 105+ | 3.39 грн |
| 250+ | 3.04 грн |
| 335+ | 2.43 грн |
| PMEG4005EH-QX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 10A
Application: automotive industry
товар відсутній
| PMEG4005EH,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 7A
товар відсутній
| PMEG4005EJ,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SC90; SOD323F
Kind of package: reel; tape
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SC90; SOD323F
Kind of package: reel; tape
Max. forward impulse current: 7A
на замовлення 2290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.41 грн |
| 70+ | 5.26 грн |
| 100+ | 4.72 грн |
| 200+ | 4.03 грн |
| 500+ | 4.02 грн |
| 550+ | 3.81 грн |
| PMEG4005EJF |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SC90; SOD323F
Kind of package: reel; tape
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SC90,SOD323F
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.47V
Case: SC90; SOD323F
Kind of package: reel; tape
Max. forward impulse current: 10A
товар відсутній
| PMEG4005ET,215 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 3.9A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 3.9A
на замовлення 310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.22 грн |
| 70+ | 5.26 грн |
| 100+ | 4.72 грн |
| 205+ | 3.94 грн |
| PMZ600UNELYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMZ600UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMZ600UNEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMZB600UNELYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
товар відсутній
| PMDXB600UNELZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMDXB600UNEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMN55ENEAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PMXB65ENEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 12.8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12.8A
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMV37ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Pulsed drain current: 14A
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 106mΩ
Mounting: SMD
товар відсутній
| PMV50ENEAR |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A
Pulsed drain current: 5.5A
Gate charge: 10nC
Polarisation: unipolar
Technology: Trench
Features of semiconductor devices: ESD protected gate
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23; TO236AB
On-state resistance: 69mΩ
Mounting: SMD
товар відсутній
| PMEG3050BEP,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 33.53 грн |
| BZX84W-B22X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 22V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 22V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 22V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 22V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-B27-QF |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 27V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 27V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 27V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 27V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-B36X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 36V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 36V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 36V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 36V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-B39F |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 39V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 39V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 39V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 39V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-B5V1F |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Zener voltage: 5.1V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Zener voltage: 5.1V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-B5V1X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Zener voltage: 5.1V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 5.1V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±2%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Zener voltage: 5.1V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C10-QX |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Zener voltage: 10V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Zener voltage: 10V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C10X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Zener voltage: 10V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 10V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Zener voltage: 10V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C18X |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 18V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SC70; SOT323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 18V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SC70; SOT323
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
| BZX84W-C24-QF |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 24V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 24V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C24F |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 24V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 24V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Zener voltage: 24V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C2V7-QF |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Zener voltage: 2.7V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Zener voltage: 2.7V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BZX84W-C2V7F |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Zener voltage: 2.7V
Max. forward voltage: 0.9V
Max. load current: 0.2A
Category: SMD Zener diodes
Description: Diode: Zener; 275mW; 2.7V; SMD; reel,tape; SC70,SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.275W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SC70; SOT323
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Zener voltage: 2.7V
Max. forward voltage: 0.9V
Max. load current: 0.2A
товар відсутній
| BUK7675-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9675-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7K23-80EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M23-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| RB751V40-QX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Power dissipation: 0.28W
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Power dissipation: 0.28W
Application: automotive industry
на замовлення 2090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 2.79 грн |
| 165+ | 2.11 грн |
| 495+ | 1.62 грн |
| 1360+ | 1.53 грн |
| RB751V40,115 |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Power dissipation: 0.28W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Case: SOD323
Kind of package: reel; tape
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Power dissipation: 0.28W
на замовлення 755 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.98 грн |
| 160+ | 2.32 грн |
| 500+ | 1.65 грн |
| PDTC144ET,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 1199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.45 грн |
| 66+ | 5.26 грн |
| 106+ | 3.29 грн |
| 136+ | 2.56 грн |
| 250+ | 1.84 грн |
| 500+ | 1.64 грн |
| 793+ | 1.01 грн |
| PDTC144ETVL |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 9775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.35 грн |
| 225+ | 1.65 грн |
| 500+ | 1.31 грн |
| 725+ | 1.14 грн |
| 1950+ | 1.08 грн |
| PDTC144EU,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 1245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 165+ | 2.3 грн |
| 195+ | 1.79 грн |
| 500+ | 1.62 грн |
| 625+ | 1.29 грн |
| PDTC144VU,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| PDTC144WT,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
на замовлення 5675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.22 грн |
| 150+ | 2.37 грн |
| 500+ | 1.65 грн |
| 725+ | 1.14 грн |
| 1950+ | 1.08 грн |
| PDTC144WU,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| XC7SH14GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverting,Schmitt trigger; NOT; Ch: 1; IN: 1
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: Mini Logic
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: buffer; inverting; Schmitt trigger
Family: XC
Case: TSSOP5
Number of inputs: 1
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverting,Schmitt trigger; NOT; Ch: 1; IN: 1
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: Mini Logic
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: CMOS
Kind of integrated circuit: buffer; inverting; Schmitt trigger
Family: XC
Case: TSSOP5
Number of inputs: 1
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
| BUK72150-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 36W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 36W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BCX17,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1329 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 10.58 грн |
| 101+ | 3.43 грн |
| 112+ | 3.11 грн |
| 324+ | 2.46 грн |
| 891+ | 2.33 грн |
| 74LVC1G386GV,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC
Manufacturer series: Mini Logic
Number of inputs: 3
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Case: SC74A
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC74A; Mini Logic; LVC
Manufacturer series: Mini Logic
Number of inputs: 3
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Case: SC74A
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Mounting: SMD
товар відсутній
| 74LVC1G386GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Manufacturer series: Mini Logic
Number of inputs: 3
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Case: SC88
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Manufacturer series: Mini Logic
Number of inputs: 3
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: single; 1
Kind of package: reel; tape
Case: SC88
Kind of gate: XOR
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Mounting: SMD
на замовлення 752 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 8.94 грн |
| 49+ | 7.2 грн |
| 100+ | 6.09 грн |
| 138+ | 5.81 грн |
| 377+ | 5.54 грн |
| 500+ | 5.26 грн |
| BCM856BS,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 250mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 250mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
на замовлення 2174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 11.18 грн |
| 38+ | 9.34 грн |
| 100+ | 8.23 грн |
| 103+ | 7.77 грн |
| 283+ | 7.35 грн |
| BCM856BSH |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 400mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 400mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
товар відсутній
| BCM857BS,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250Hz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250Hz
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 17.88 грн |
| 27+ | 13.15 грн |
| 38+ | 9.34 грн |
| 100+ | 8.58 грн |
| 108+ | 7.4 грн |
| 297+ | 6.99 грн |
| 1000+ | 6.92 грн |
| 74AUP1G132GM,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| 74AUP1G132GN,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| 74AUP1G132GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
товар відсутній
| 74AUP2G132DC,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8
Type of integrated circuit: digital
Case: VSSOP8
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: AUP
Mounting: SMD
Operating temperature: -40...125°C
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8
Type of integrated circuit: digital
Case: VSSOP8
Number of inputs: 2
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: Mini Logic
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: AUP
Mounting: SMD
Operating temperature: -40...125°C
товар відсутній
| PDTB123TT,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.44 грн |
| 140+ | 2.88 грн |
| 400+ | 2.09 грн |
| 1060+ | 1.98 грн |
| PDTC124TT,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
на замовлення 4075 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.31 грн |
| 150+ | 2.37 грн |
| 500+ | 1.65 грн |
| 725+ | 1.14 грн |
| 1950+ | 1.08 грн |
| PUMF11,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 100MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 100MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN / PNP
на замовлення 2720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 8.35 грн |
| 80+ | 4.41 грн |
| 225+ | 3.62 грн |
| 250+ | 3.61 грн |
| 610+ | 3.42 грн |
| PMMT591A,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.58 грн |
| 70+ | 5.29 грн |
| 100+ | 4.76 грн |
| 205+ | 3.98 грн |
| 555+ | 3.77 грн |
| PTVS13VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 1680 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.64 грн |
| 33+ | 10.52 грн |
| 100+ | 9.48 грн |
| 107+ | 7.51 грн |
| 294+ | 7.1 грн |