| Фото | Назва | Виробник | Інформація |
Доступність |
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PMMT491A,215 | NEXPERIA |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 2A Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
на замовлення 3555 шт: термін постачання 21-30 дні (днів) |
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2PD602AQL,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 85...170 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товар відсутній |
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BZV49-C5V1,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Type of diode: Zener Max. load current: 0.25A Tolerance: ±5% Case: SOT89 Zener voltage: 5.6V Mounting: SMD Power dissipation: 1W |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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BZV49-C5V6,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Type of diode: Zener Max. load current: 0.25A Tolerance: ±5% Case: SOT89 Zener voltage: 5.6V Mounting: SMD Power dissipation: 1W |
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BZT52H-B5V6,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F; Ir: 1uA Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD123F Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 454 шт: термін постачання 21-30 дні (днів) |
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BZT52H-C5V6,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD123F Max. load current: 0.25A Semiconductor structure: single diode |
на замовлення 1435 шт: термін постачання 21-30 дні (днів) |
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BZX84J-C15,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 15V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
на замовлення 1745 шт: термін постачання 21-30 дні (днів) |
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| PESD3V3Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 6.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
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| 74AUP1G09GM,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Family: AUP |
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| 74AUP1G09GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Family: AUP |
товар відсутній |
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74AUP1G09GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; AUP Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: open drain Family: AUP |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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| 74AUP1G11GM,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP |
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| 74AUP1G11GN,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP |
товар відсутній |
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| 74AUP1G11GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP |
товар відсутній |
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| 74AUP1G11GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: TSSOP6 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP |
товар відсутній |
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74AUP2G08DC,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; 800mVDC÷3.6VDC; AUP Type of integrated circuit: digital Mounting: SMD Case: VSSOP8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Number of inputs: 2 Kind of package: reel; tape Family: AUP Number of channels: 2 Kind of gate: AND Technology: CMOS |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| 74AUP2G08GN,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP Type of integrated circuit: digital Mounting: SMD Case: XSON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Number of inputs: 2 Kind of package: reel; tape Family: AUP Number of channels: 2 Kind of gate: AND Technology: CMOS |
товар відсутній |
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| 74AUP2G08GS,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP Type of integrated circuit: digital Mounting: SMD Case: XSON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Number of inputs: 2 Kind of package: reel; tape Family: AUP Number of channels: 2 Kind of gate: AND Technology: CMOS |
товар відсутній |
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| PSMN4R0-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Pulsed drain current: 472A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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| 74HCT2G16GVH | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic Type of integrated circuit: digital Case: SC74; TSOP6 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Technology: TTL Number of inputs: 1 Kind of package: reel; tape Family: HCT Kind of integrated circuit: buffer Number of channels: 2 Manufacturer series: Mini Logic |
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BCM53DSF | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.32W Case: SC74; SOT457; TSOP6 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 140Hz |
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| BUK7M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 211A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK7M22-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W Case: LFPAK33; SOT1210 Polarisation: unipolar Application: automotive industry Power dissipation: 75W Kind of package: reel; tape Gate charge: 23.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 147A Mounting: SMD Drain-source voltage: 80V Drain current: 26A On-state resistance: 55mΩ Type of transistor: N-MOSFET |
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| BUK7M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 78A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK7M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK7M9R9-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 240A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK7Y1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK33; SOT1210 On-state resistance: 3.05mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M10-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M11-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M11-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain-source voltage: 40V Drain current: 34A On-state resistance: 27.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 21nC Kind of channel: enhanced Pulsed drain current: 193A |
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| BUK9M12-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M14-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 31A Pulsed drain current: 176A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M15-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M17-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 48.5mΩ Mounting: SMD Gate charge: 12.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M35-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 19A Pulsed drain current: 106A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 88mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M3R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M67-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 85A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 148mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M6R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 311A Power dissipation: 70W Case: LFPAK33; SOT1210 On-state resistance: 15mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M7R2-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 296A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 19.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M85-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 51A Power dissipation: 31W Case: LFPAK33; SOT1210 On-state resistance: 192mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| BUK9M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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BZX84-C13,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 8570 шт: термін постачання 21-30 дні (днів) |
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BZX84-C27,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 2243 шт: термін постачання 21-30 дні (днів) |
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BZX84-C3V0,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 3670 шт: термін постачання 21-30 дні (днів) |
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BZX84-C43,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 3274 шт: термін постачання 21-30 дні (днів) |
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BZX84-C47,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 2005 шт: термін постачання 21-30 дні (днів) |
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BZX84-C56,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| BZA856A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 24W Max. off-state voltage: 5.6V Semiconductor structure: common anode; quadruple Max. forward impulse current: 3.75A Leakage current: 2µA Type of diode: TVS array Features of semiconductor devices: ESD protection |
товар відсутній |
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| BZA856AVL,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353 Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 6W Max. off-state voltage: 5.6V Semiconductor structure: common anode; quadruple Max. forward impulse current: 3.5A Leakage current: 0.2µA Type of diode: TVS array Features of semiconductor devices: ESD protection |
товар відсутній |
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| PSMN4R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 95A Pulsed drain current: 378A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PSMN5R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 74A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2835 шт: термін постачання 21-30 дні (днів) |
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| BUK964R4-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 75A Pulsed drain current: 697A Power dissipation: 254W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |
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BZV55-C30,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 10285 шт: термін постачання 21-30 дні (днів) |
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| 74LVC157ABQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN16 Family: LVC Supply voltage: 1.2...3.6V DC Kind of package: reel; tape Operating temperature: -40...125°C |
товар відсутній |
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PSMN025-100D,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| PSMN069-100YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 68A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 0.149Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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PSMN2R0-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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PSMN2R2-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| PMMT491A,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
на замовлення 3555 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.76 грн |
| 65+ | 5.41 грн |
| 100+ | 4.86 грн |
| 210+ | 3.91 грн |
| 575+ | 3.7 грн |
| 2PD602AQL,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 85...170
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 85...170
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товар відсутній
| BZV49-C5V1,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Tolerance: ±5%
Case: SOT89
Zener voltage: 5.6V
Mounting: SMD
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Tolerance: ±5%
Case: SOT89
Zener voltage: 5.6V
Mounting: SMD
Power dissipation: 1W
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.52 грн |
| 15+ | 24.28 грн |
| 25+ | 21.85 грн |
| BZV49-C5V6,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Tolerance: ±5%
Case: SOT89
Zener voltage: 5.6V
Mounting: SMD
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOT89; Ifmax: 250mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.25A
Tolerance: ±5%
Case: SOT89
Zener voltage: 5.6V
Mounting: SMD
Power dissipation: 1W
товар відсутній
| BZT52H-B5V6,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 454 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.03 грн |
| 165+ | 2.12 грн |
| BZT52H-C5V6,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 5.6V; SMD; reel,tape; SOD123F
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD123F
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 1435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.06 грн |
| 180+ | 1.98 грн |
| 500+ | 1.78 грн |
| 570+ | 1.42 грн |
| BZX84J-C15,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 15V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 15V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 1745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 18.68 грн |
| 30+ | 11.79 грн |
| 50+ | 6.94 грн |
| 100+ | 4.86 грн |
| 250+ | 4.44 грн |
| 403+ | 2 грн |
| 1107+ | 1.89 грн |
| PESD3V3Z1BCSFYL |
|
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
товар відсутній
| 74AUP1G09GM,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09GS,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
товар відсутній
| 74AUP1G09GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
Family: AUP
на замовлення 189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 16.43 грн |
| 26+ | 13.67 грн |
| 28+ | 12.49 грн |
| 32+ | 11.03 грн |
| 100+ | 9.5 грн |
| 145+ | 5.55 грн |
| 74AUP1G11GM,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G11GN,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G11GS,132 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP1G11GW,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; TSSOP6; Mini Logic; AUP
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
товар відсутній
| 74AUP2G08DC,125 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: VSSOP8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; VSSOP8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: VSSOP8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 41.61 грн |
| 11+ | 34.48 грн |
| 12+ | 31.29 грн |
| 25+ | 27.61 грн |
| 61+ | 13.18 грн |
| 166+ | 12.49 грн |
| 3000+ | 12.42 грн |
| 74AUP2G08GN,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
товар відсутній
| 74AUP2G08GS,115 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 2; CMOS; SMD; XSON8; 800mVDC÷3.6VDC; AUP
Type of integrated circuit: digital
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Number of inputs: 2
Kind of package: reel; tape
Family: AUP
Number of channels: 2
Kind of gate: AND
Technology: CMOS
товар відсутній
| PSMN4R0-40YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; Idm: 472A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 74HCT2G16GVH |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Type of integrated circuit: digital
Case: SC74; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Number of inputs: 1
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: buffer
Number of channels: 2
Manufacturer series: Mini Logic
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; IN: 1; TTL; SMD; SC74,TSOP6; Mini Logic
Type of integrated circuit: digital
Case: SC74; TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Number of inputs: 1
Kind of package: reel; tape
Family: HCT
Kind of integrated circuit: buffer
Number of channels: 2
Manufacturer series: Mini Logic
товар відсутній
| BCM53DSF |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 80V; 1A; 320mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.32W
Case: SC74; SOT457; TSOP6
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 140Hz
товар відсутній
| BUK7M12-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7M22-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 147A; 75W
Case: LFPAK33; SOT1210
Polarisation: unipolar
Application: automotive industry
Power dissipation: 75W
Kind of package: reel; tape
Gate charge: 23.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 147A
Mounting: SMD
Drain-source voltage: 80V
Drain current: 26A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
товар відсутній
| BUK7M42-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7M8R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7M9R9-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK7Y1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK33; SOT1210
On-state resistance: 3.05mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M10-30EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M11-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M11-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 193A; 50W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 27.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Kind of channel: enhanced
Pulsed drain current: 193A
товар відсутній
| BUK9M12-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 216A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M14-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M15-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M17-30EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M20-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M35-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M3R3-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M4R3-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M67-60ELX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M6R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M7R2-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M85-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BUK9M8R5-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BZX84-C13,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 8570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.4 грн |
| 255+ | 1.38 грн |
| 500+ | 1.25 грн |
| 820+ | 0.99 грн |
| 2255+ | 0.94 грн |
| BZX84-C27,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 27V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.76 грн |
| 200+ | 1.75 грн |
| 500+ | 1.57 грн |
| 670+ | 1.19 грн |
| 1845+ | 1.13 грн |
| BZX84-C3V0,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 4.07 грн |
| 210+ | 1.66 грн |
| 500+ | 1.5 грн |
| 685+ | 1.19 грн |
| 1885+ | 1.13 грн |
| BZX84-C43,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 43V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 3274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.78 грн |
| 200+ | 1.75 грн |
| 500+ | 1.57 грн |
| 670+ | 1.19 грн |
| 1845+ | 1.13 грн |
| BZX84-C47,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 47V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.3 грн |
| 200+ | 1.75 грн |
| 500+ | 1.57 грн |
| 670+ | 1.19 грн |
| 1845+ | 1.13 грн |
| BZX84-C56,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 56V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| BZA856A,115 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
| BZA856AVL,115 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
товар відсутній
| PSMN4R0-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PSMN5R5-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2835 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.32 грн |
| 5+ | 92.95 грн |
| 11+ | 76.31 грн |
| 29+ | 72.14 грн |
| 500+ | 69.37 грн |
| BUK964R4-40B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 697A; 254W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 697A
Power dissipation: 254W
Case: D2PAK; SOT404
Gate-source voltage: ±15V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| BZV55-C30,115 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 30V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 10285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 10.46 грн |
| 49+ | 7.21 грн |
| 73+ | 4.8 грн |
| 100+ | 3.95 грн |
| 250+ | 3.05 грн |
| 500+ | 2.43 грн |
| 612+ | 1.31 грн |
| 1682+ | 1.23 грн |
| 74LVC157ABQ,115 |
|
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN16; LVC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
товар відсутній
| PSMN025-100D,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PSMN069-100YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 68A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PSMN2R0-60PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| PSMN2R2-40PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній