Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PESD1CAN,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 27.8V; 3A; 200W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Application: CAN Operating temperature: max. 150°C кількість в упаковці: 5 шт |
на замовлення 3654 шт: термін постачання 7-14 дні (днів) |
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PESD1FLEX,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 25.4÷30.3V; 200W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 25.4...30.3V Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 1145 шт: термін постачання 7-14 дні (днів) |
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PESD1IVN24-AX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 25.5÷35.5V; 3.5A; bidirectional; SC76,SOD323 Type of diode: TVS array Breakdown voltage: 25.5...35.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Mounting: SMD Case: SC76; SOD323 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Application: automotive industry кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PESD1IVN27-AX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC76,SOD323 Type of diode: TVS array Breakdown voltage: 28...38V Max. forward impulse current: 3A Semiconductor structure: bidirectional Mounting: SMD Case: SC76; SOD323 Max. off-state voltage: 27V Features of semiconductor devices: ESD protection Leakage current: 50nA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2280 шт: термін постачання 7-14 дні (днів) |
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PESD1IVN27-UX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC70,SOT323 Type of diode: TVS array Breakdown voltage: 28...38V Max. forward impulse current: 3A Semiconductor structure: bidirectional Mounting: SMD Case: SC70; SOT323 Max. off-state voltage: 27V Features of semiconductor devices: ESD protection Leakage current: 50nA Application: automotive industry кількість в упаковці: 5 шт |
на замовлення 2900 шт: термін постачання 7-14 дні (днів) |
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PESD1LIN,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 18.9...27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: asymmetric; bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15...24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 855 шт: термін постачання 7-14 дні (днів) |
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PESD1LIN,135 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 18.9...27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: asymmetric; bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15...24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
товар відсутній |
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PESD1LINZ | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 18.9...27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: asymmetric; bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15...24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 6430 шт: термін постачання 7-14 дні (днів) |
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PESD1USB3SZ | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 8A; double,common anode; WLCSP5 Type of diode: TVS array Breakdown voltage: 6V Max. forward impulse current: 8A Semiconductor structure: common anode; double Mounting: SMD Case: WLCSP5 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Capacitance: 0.45pF кількість в упаковці: 5 шт |
товар відсутній |
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PESD24VF1BLYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 24.5÷31.5V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Breakdown voltage: 24.5...31.5V Semiconductor structure: bidirectional Mounting: SMD Case: DFN1006-2; SOD882 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 30nA кількість в упаковці: 5 шт |
на замовлення 9485 шт: термін постачання 7-14 дні (днів) |
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PESD24VL1BA,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 1 шт |
на замовлення 9839 шт: термін постачання 7-14 дні (днів) |
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PESD24VL2BT,215 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOT23 Type of diode: TVS Breakdown voltage: 27.8V Max. forward impulse current: 3A Peak pulse power dissipation: 0.2kW Semiconductor structure: bidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 2295 шт: термін постачання 7-14 дні (днів) |
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PESD24VS1UA,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 166W; 27V; unidirectional; SOD323 Type of diode: TVS Breakdown voltage: 27V Peak pulse power dissipation: 166W Semiconductor structure: unidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
на замовлення 3340 шт: термін постачання 7-14 дні (днів) |
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PESD24VS1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 160W; 27V; 3A; unidirectional; SOD523; max.150°C Type of diode: TVS Breakdown voltage: 27V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 2595 шт: термін постачання 7-14 дні (днів) |
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PESD24VS1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 150W; 26.5÷27.5V; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Breakdown voltage: 26.5...27.5V Peak pulse power dissipation: 0.15kW Semiconductor structure: unidirectional Mounting: SMD Case: DFN1006-2; SOD882 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
товар відсутній |
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PESD24VS2UAT-QR | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 160W; 26.5÷27.5V; 3A; unidirectional; SOT23 Type of diode: TVS Breakdown voltage: 26.5...27.5V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
товар відсутній |
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PESD24VS2UAT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 27V; 3A; double,common cathode; SOT23 Type of diode: TVS array Breakdown voltage: 27V Max. forward impulse current: 3A Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Capacitance: 50pF кількість в упаковці: 5 шт |
на замовлення 1950 шт: термін постачання 7-14 дні (днів) |
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PESD24VS2UT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; SOT23 Type of diode: TVS array Breakdown voltage: 26.5...27.5V Max. forward impulse current: 3A Peak pulse power dissipation: 160W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 1µA кількість в упаковці: 5 шт |
на замовлення 3515 шт: термін постачання 7-14 дні (днів) |
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PESD27VV1BAX | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 28÷38V; 3A; bidirectional; SOD323 Type of diode: TVS Breakdown voltage: 28...38V Max. forward impulse current: 3A Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 27V Features of semiconductor devices: ESD protection Capacitance: 17pF кількість в упаковці: 5 шт |
товар відсутній |
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PESD2CAN,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection Type of diode: TVS array Breakdown voltage: 28V Max. forward impulse current: 5A Peak pulse power dissipation: 230W Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 10nA Number of channels: 2 Application: CAN Operating temperature: max. 150°C кількість в упаковці: 5 шт |
на замовлення 2285 шт: термін постачання 7-14 дні (днів) |
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PESD2CANFD24L-TR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 25.5÷35.5V; 4A; SOT23; Features: ESD protection Type of diode: TVS array Breakdown voltage: 25.5...35.5V Max. forward impulse current: 4A Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Number of channels: 2 Application: CAN кількість в упаковці: 5 шт |
товар відсутній |
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PESD2CANFD24V-TR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 25.5÷35.5V; 2.6A; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 25.5...35.5V Max. forward impulse current: 2.6A Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Features of semiconductor devices: ESD protection Leakage current: 50nA Number of channels: 2 Application: CAN кількість в упаковці: 5 шт |
на замовлення 2285 шт: термін постачання 7-14 дні (днів) |
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PESD2ETH-ADX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 3.5A; unidirectional; SC74,SOT457,TSOP6 Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Capacitance: 2.3pF кількість в упаковці: 1 шт |
товар відсутній |
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PESD2ETH-AXR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2 Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Capacitance: 1.8pF кількість в упаковці: 1 шт |
на замовлення 576 шт: термін постачання 7-14 дні (днів) |
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PESD2ETH-DX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; 2.5A; unidirectional; SC74,SOT457,TSOP6 Type of diode: TVS array Breakdown voltage: 6...9V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 2 Capacitance: 1.5pF кількість в упаковці: 1 шт |
товар відсутній |
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PESD2ETH100-TR | NEXPERIA | PESD2ETH100-TR Transil diodes - arrays |
товар відсутній |
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PESD2IVN-UX | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 150W; 28÷32V; 3A; bidirectional; SC70,SOT323 Type of diode: TVS Peak pulse power dissipation: 150W Max. off-state voltage: 26.5V Breakdown voltage: 28...32V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SC70; SOT323 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection Application: automotive industry кількість в упаковці: 5 шт |
товар відсутній |
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PESD2IVN24-TR | NEXPERIA | PESD2IVN24-TR Transil diodes - arrays |
на замовлення 2395 шт: термін постачання 7-14 дні (днів) |
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PESD2IVN27-TR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 28÷38V; 3A; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 28...38V Max. forward impulse current: 3A Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 27V Features of semiconductor devices: ESD protection Leakage current: 50nA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1936 шт: термін постачання 7-14 дні (днів) |
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PESD2IVN27-UX | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS; 28÷38V; 3A; bidirectional,double; SC70,SOT323 Type of diode: TVS Breakdown voltage: 28...38V Max. forward impulse current: 3A Semiconductor structure: bidirectional; double Mounting: SMD Case: SC70; SOT323 Max. off-state voltage: 27V Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
товар відсутній |
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PESD2USB3UX-TR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 4.2÷8V; 4A; unidirectional,double,common anode Mounting: SMD Case: SOT23 Capacitance: 0.7pF Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 4A Breakdown voltage: 4.2...8V Leakage current: 50nA Semiconductor structure: common anode; double; unidirectional Max. off-state voltage: 3.3V кількість в упаковці: 5 шт |
товар відсутній |
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PESD2USB5UV-TR | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.2÷11V; 10A; SOT23; Features: ESD protection Type of diode: TVS array Breakdown voltage: 7.2...11V Max. forward impulse current: 10A Semiconductor structure: common anode; double; unidirectional Max. off-state voltage: 5V Capacitance: 0.9pF Case: SOT23 Mounting: SMD Features of semiconductor devices: ESD protection Leakage current: 50nA кількість в упаковці: 5 шт |
товар відсутній |
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PESD2V0Y1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3.3V; bidirectional; DSN0603-2,SOD962-2 Mounting: SMD Case: DSN0603-2; SOD962-2 Type of diode: TVS Features of semiconductor devices: ESD protection Breakdown voltage: 3.3V Leakage current: 50nA Semiconductor structure: bidirectional Max. off-state voltage: 2V кількість в упаковці: 5 шт |
на замовлення 6265 шт: термін постачання 7-14 дні (днів) |
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PESD36VS2UT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 44V; 2.5A; 160W; SOT23; Features: ESD protection Type of diode: TVS array Peak pulse power dissipation: 160W Max. off-state voltage: 36V Breakdown voltage: 44V Max. forward impulse current: 2.5A Semiconductor structure: common anode; double; unidirectional Case: SOT23 Mounting: SMD Leakage current: 1µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 2374 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L1BA,115 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323 Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 3.3V Breakdown voltage: 5.8...6.9V Max. forward impulse current: 18A Semiconductor structure: bidirectional Case: SC76; SOD323 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection Capacitance: 101pF кількість в упаковці: 5 шт |
на замовлення 9660 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L1BAF | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323 Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 3.3V Breakdown voltage: 5.8...6.9V Max. forward impulse current: 18A Semiconductor structure: bidirectional Case: SC76; SOD323 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection кількість в упаковці: 10000 шт |
товар відсутній |
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PESD3V3L1BAZ | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323 Type of diode: TVS Peak pulse power dissipation: 0.5kW Max. off-state voltage: 3.3V Breakdown voltage: 5.8...6.9V Max. forward impulse current: 18A Semiconductor structure: bidirectional Case: SC76; SOD323 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 2850 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 45W Max. off-state voltage: 3.3V Breakdown voltage: 5.3...6V Max. forward impulse current: 4.5A Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD3V3L2BT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.35kW Max. off-state voltage: 3.3V Breakdown voltage: 6.4V Semiconductor structure: bidirectional; double Case: SOT23 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 3150 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L2UM,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883 Type of diode: TVS Peak pulse power dissipation: 30W Max. off-state voltage: 3.3V Breakdown voltage: 5.32...5.88V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SOT883 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
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PESD3V3L4UF,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886 Type of diode: TVS Peak pulse power dissipation: 30W Max. off-state voltage: 3.3V Breakdown voltage: 5.32...5.88V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SOT886 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD3V3L4UG,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 3A; 30W; SOT353; Features: ESD protection Type of diode: TVS array Peak pulse power dissipation: 30W Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Max. forward impulse current: 3A Semiconductor structure: common anode; quadruple; unidirectional Case: SOT353 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection кількість в упаковці: 1 шт |
на замовлення 1820 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L4UW,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 3.5A; SOT665; Features: ESD protection Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Max. forward impulse current: 3.5A Semiconductor structure: common anode; quadruple; unidirectional Case: SOT665 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection Capacitance: 28pF кількість в упаковці: 5 шт |
на замовлення 2980 шт: термін постачання 7-14 дні (днів) |
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PESD3V3L5UY,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 2.5A; SOT363; Features: ESD protection Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SOT363 Mounting: SMD Leakage current: 0.3µA Features of semiconductor devices: ESD protection Capacitance: 28pF кількість в упаковці: 5 шт |
на замовлення 2265 шт: термін постачання 7-14 дні (днів) |
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PESD3V3S1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 330W; 5.6V; 18A; unidirectional; SOD523 Type of diode: TVS Peak pulse power dissipation: 330W Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Max. forward impulse current: 18A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection кількість в упаковці: 1 шт |
на замовлення 26319 шт: термін постачання 7-14 дні (днів) |
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PESD3V3S2UT,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.2÷6V; 18A; 330W; SOT23 Case: SOT23 Mounting: SMD Max. off-state voltage: 3.3V Semiconductor structure: common anode; double; unidirectional Max. forward impulse current: 18A Breakdown voltage: 5.2...6V Leakage current: 2µA Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 330W кількість в упаковці: 5 шт |
на замовлення 47235 шт: термін постачання 7-14 дні (днів) |
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PESD3V3S4UD,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6 Type of diode: TVS array Peak pulse power dissipation: 0.2kW Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Semiconductor structure: common anode; quadruple; unidirectional Case: SC74; SOT457; TSOP6 Mounting: SMD Leakage current: 0.8µA Features of semiconductor devices: ESD protection кількість в упаковці: 1 шт |
на замовлення 2781 шт: термін постачання 7-14 дні (днів) |
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PESD3V3U1UA,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.6V; unidirectional; SOD323; Features: ESD protection Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 10 шт: термін постачання 7-14 дні (днів) |
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PESD3V3U1UB,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5.6V; unidirectional; SOD523; Features: ESD protection Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5.6V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection Capacitance: 3.1pF кількість в упаковці: 5 шт |
на замовлення 145 шт: термін постачання 7-14 дні (днів) |
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PESD3V3U1UL,315 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 4.5...6.8V Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 3950 шт: термін постачання 7-14 дні (днів) |
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PESD3V3U1UT,215 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23 Type of diode: TVS Peak pulse power dissipation: 80W Max. off-state voltage: 3.3V Breakdown voltage: 6.4V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 2µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 1680 шт: термін постачання 7-14 дні (днів) |
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PESD3V3V1BLYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 4.5V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 10nA Features of semiconductor devices: ESD protection кількість в упаковці: 25 шт |
товар відсутній |
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PESD3V3X1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 10V Max. forward impulse current: 8A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD3V3X1BL,315 | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5...7.8V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection кількість в упаковці: 10000 шт |
товар відсутній |
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PESD3V3Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 6.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD3V6Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.6V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD4V0Y1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 4.2÷8V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 4V Breakdown voltage: 4.2...8V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD4V0Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 4V Breakdown voltage: 6.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
товар відсутній |
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PESD4V0Z1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 4V Breakdown voltage: 6.9V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 9000 шт |
товар відсутній |
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PESD5V0C1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 10V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 8574 шт: термін постачання 7-14 дні (днів) |
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PESD1CAN,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.8V; 3A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: CAN
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.8V; 3A; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: CAN
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
на замовлення 3654 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.83 грн |
100+ | 11.82 грн |
110+ | 9.07 грн |
295+ | 8.57 грн |
3000+ | 8.24 грн |
PESD1FLEX,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 25.4...30.3V
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.4÷30.3V; 200W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 25.4...30.3V
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 1145 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.37 грн |
30+ | 9.68 грн |
100+ | 8.32 грн |
135+ | 7.24 грн |
370+ | 6.83 грн |
PESD1IVN24-AX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 3.5A; bidirectional; SC76,SOD323
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 3.5A; bidirectional; SC76,SOD323
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
50+ | 5.6 грн |
100+ | 4.88 грн |
250+ | 3.88 грн |
685+ | 3.67 грн |
PESD1IVN27-AX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC76,SOD323
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC76,SOD323
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC76; SOD323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2280 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 11.83 грн |
47+ | 5.64 грн |
100+ | 4.89 грн |
248+ | 3.89 грн |
681+ | 3.68 грн |
PESD1IVN27-UX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC70,SOT323
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional; SC70,SOT323
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 2900 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.55 грн |
30+ | 8.82 грн |
100+ | 7.58 грн |
160+ | 6.08 грн |
435+ | 5.74 грн |
PESD1LIN,115 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 855 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
30+ | 9.34 грн |
100+ | 7.16 грн |
145+ | 6.66 грн |
400+ | 6.33 грн |
3000+ | 6.08 грн |
PESD1LIN,135 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PESD1LINZ |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 160W; 18.9÷27.8V; 3A; asymmetric,bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 18.9...27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: asymmetric; bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15...24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 6430 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
35+ | 8.39 грн |
100+ | 6.49 грн |
170+ | 5.83 грн |
460+ | 5.49 грн |
PESD1USB3SZ |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 8A; double,common anode; WLCSP5
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 8A
Semiconductor structure: common anode; double
Mounting: SMD
Case: WLCSP5
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Capacitance: 0.45pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 8A; double,common anode; WLCSP5
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 8A
Semiconductor structure: common anode; double
Mounting: SMD
Case: WLCSP5
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Capacitance: 0.45pF
кількість в упаковці: 5 шт
товар відсутній
PESD24VF1BLYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 24.5÷31.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 24.5...31.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 30nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 24.5÷31.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 24.5...31.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 30nA
кількість в упаковці: 5 шт
на замовлення 9485 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.91 грн |
30+ | 9.51 грн |
100+ | 7.24 грн |
145+ | 6.8 грн |
390+ | 6.43 грн |
2500+ | 6.16 грн |
PESD24VL1BA,115 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 1 шт
на замовлення 9839 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 15.42 грн |
32+ | 8.3 грн |
100+ | 7.16 грн |
169+ | 5.7 грн |
465+ | 5.39 грн |
PESD24VL2BT,215 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 200W; 27.8V; 3A; bidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 27.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 2295 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.81 грн |
30+ | 9.16 грн |
100+ | 7.91 грн |
160+ | 6.07 грн |
440+ | 5.74 грн |
PESD24VS1UA,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 166W; 27V; unidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 27V
Peak pulse power dissipation: 166W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 166W; 27V; unidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 27V
Peak pulse power dissipation: 166W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
на замовлення 3340 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.16 грн |
45+ | 6.09 грн |
100+ | 5.28 грн |
240+ | 4.04 грн |
660+ | 3.82 грн |
PESD24VS1UB,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 27V; 3A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Breakdown voltage: 27V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 27V; 3A; unidirectional; SOD523; max.150°C
Type of diode: TVS
Breakdown voltage: 27V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 2595 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.98 грн |
43+ | 6.05 грн |
100+ | 5.24 грн |
232+ | 4.16 грн |
637+ | 3.94 грн |
PESD24VS1UL,315 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 150W; 26.5÷27.5V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 26.5...27.5V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 150W; 26.5÷27.5V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Breakdown voltage: 26.5...27.5V
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN1006-2; SOD882
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PESD24VS2UAT-QR |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 26.5÷27.5V; 3A; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 160W; 26.5÷27.5V; 3A; unidirectional; SOT23
Type of diode: TVS
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PESD24VS2UAT,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 3A; double,common cathode; SOT23
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 3A
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 50pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 3A; double,common cathode; SOT23
Type of diode: TVS array
Breakdown voltage: 27V
Max. forward impulse current: 3A
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Capacitance: 50pF
кількість в упаковці: 5 шт
на замовлення 1950 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.45 грн |
35+ | 7.78 грн |
100+ | 6.74 грн |
180+ | 5.41 грн |
490+ | 5.16 грн |
3000+ | 4.99 грн |
PESD24VS2UT,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; SOT23
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; SOT23
Type of diode: TVS array
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Peak pulse power dissipation: 160W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
кількість в упаковці: 5 шт
на замовлення 3515 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.27 грн |
40+ | 7.26 грн |
100+ | 6.24 грн |
195+ | 4.99 грн |
535+ | 4.72 грн |
PESD27VV1BAX |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28÷38V; 3A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Capacitance: 17pF
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 28÷38V; 3A; bidirectional; SOD323
Type of diode: TVS
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Capacitance: 17pF
кількість в упаковці: 5 шт
товар відсутній
PESD2CAN,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 28V; 5A; 230W; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 28V
Max. forward impulse current: 5A
Peak pulse power dissipation: 230W
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 10nA
Number of channels: 2
Application: CAN
Operating temperature: max. 150°C
кількість в упаковці: 5 шт
на замовлення 2285 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 16.32 грн |
25+ | 13.92 грн |
100+ | 12.07 грн |
105+ | 9.51 грн |
280+ | 8.99 грн |
PESD2CANFD24L-TR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 4A; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 4A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Number of channels: 2
Application: CAN
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 4A; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 4A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Number of channels: 2
Application: CAN
кількість в упаковці: 5 шт
товар відсутній
PESD2CANFD24V-TR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 2.6A; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 2.6A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Number of channels: 2
Application: CAN
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 25.5÷35.5V; 2.6A; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 25.5...35.5V
Max. forward impulse current: 2.6A
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Number of channels: 2
Application: CAN
кількість в упаковці: 5 шт
на замовлення 2285 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.19 грн |
45+ | 6.36 грн |
100+ | 5.53 грн |
230+ | 4.25 грн |
625+ | 4.01 грн |
PESD2ETH-ADX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 3.5A; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 2.3pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 3.5A; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 2.3pF
кількість в упаковці: 1 шт
товар відсутній
PESD2ETH-AXR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 1.8pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 1.8pF
кількість в упаковці: 1 шт
на замовлення 576 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 22.68 грн |
25+ | 19.19 грн |
72+ | 13.73 грн |
196+ | 12.99 грн |
PESD2ETH-DX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 2.5A; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 1.5pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 2.5A; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 1.5pF
кількість в упаковці: 1 шт
товар відсутній
PESD2IVN-UX |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 28÷32V; 3A; bidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 26.5V
Breakdown voltage: 28...32V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Application: automotive industry
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 28÷32V; 3A; bidirectional; SC70,SOT323
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 26.5V
Breakdown voltage: 28...32V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SC70; SOT323
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
PESD2IVN24-TR |
Виробник: NEXPERIA
PESD2IVN24-TR Transil diodes - arrays
PESD2IVN24-TR Transil diodes - arrays
на замовлення 2395 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 14.79 грн |
174+ | 5.61 грн |
477+ | 5.3 грн |
PESD2IVN27-TR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 28÷38V; 3A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1936 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 16.14 грн |
32+ | 8.13 грн |
100+ | 7.08 грн |
158+ | 6.18 грн |
435+ | 5.84 грн |
3000+ | 5.58 грн |
PESD2IVN27-UX |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS; 28÷38V; 3A; bidirectional,double; SC70,SOT323
Type of diode: TVS
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS; 28÷38V; 3A; bidirectional,double; SC70,SOT323
Type of diode: TVS
Breakdown voltage: 28...38V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SC70; SOT323
Max. off-state voltage: 27V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PESD2USB3UX-TR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.2÷8V; 4A; unidirectional,double,common anode
Mounting: SMD
Case: SOT23
Capacitance: 0.7pF
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 4A
Breakdown voltage: 4.2...8V
Leakage current: 50nA
Semiconductor structure: common anode; double; unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.2÷8V; 4A; unidirectional,double,common anode
Mounting: SMD
Case: SOT23
Capacitance: 0.7pF
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 4A
Breakdown voltage: 4.2...8V
Leakage current: 50nA
Semiconductor structure: common anode; double; unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 5 шт
товар відсутній
PESD2USB5UV-TR |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.2÷11V; 10A; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 7.2...11V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double; unidirectional
Max. off-state voltage: 5V
Capacitance: 0.9pF
Case: SOT23
Mounting: SMD
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.2÷11V; 10A; SOT23; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 7.2...11V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double; unidirectional
Max. off-state voltage: 5V
Capacitance: 0.9pF
Case: SOT23
Mounting: SMD
Features of semiconductor devices: ESD protection
Leakage current: 50nA
кількість в упаковці: 5 шт
товар відсутній
PESD2V0Y1BSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3.3V; bidirectional; DSN0603-2,SOD962-2
Mounting: SMD
Case: DSN0603-2; SOD962-2
Type of diode: TVS
Features of semiconductor devices: ESD protection
Breakdown voltage: 3.3V
Leakage current: 50nA
Semiconductor structure: bidirectional
Max. off-state voltage: 2V
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3.3V; bidirectional; DSN0603-2,SOD962-2
Mounting: SMD
Case: DSN0603-2; SOD962-2
Type of diode: TVS
Features of semiconductor devices: ESD protection
Breakdown voltage: 3.3V
Leakage current: 50nA
Semiconductor structure: bidirectional
Max. off-state voltage: 2V
кількість в упаковці: 5 шт
на замовлення 6265 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.55 грн |
40+ | 6.92 грн |
100+ | 5.99 грн |
180+ | 5.38 грн |
495+ | 5.09 грн |
9000+ | 4.91 грн |
PESD36VS2UT,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 44V; 2.5A; 160W; SOT23; Features: ESD protection
Type of diode: TVS array
Peak pulse power dissipation: 160W
Max. off-state voltage: 36V
Breakdown voltage: 44V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 44V; 2.5A; 160W; SOT23; Features: ESD protection
Type of diode: TVS array
Peak pulse power dissipation: 160W
Max. off-state voltage: 36V
Breakdown voltage: 44V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 2374 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.81 грн |
40+ | 7.26 грн |
100+ | 6.24 грн |
175+ | 5.5 грн |
485+ | 5.2 грн |
3000+ | 4.99 грн |
PESD3V3L1BA,115 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Capacitance: 101pF
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
Capacitance: 101pF
кількість в упаковці: 5 шт
на замовлення 9660 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.45 грн |
25+ | 11.06 грн |
100+ | 7.49 грн |
190+ | 5.16 грн |
515+ | 4.91 грн |
PESD3V3L1BAF |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 10000 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 10000 шт
товар відсутній
PESD3V3L1BAZ |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 2850 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.37 грн |
40+ | 7.35 грн |
100+ | 6.16 грн |
180+ | 5.41 грн |
495+ | 5.08 грн |
PESD3V3L1UL,315 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 45W; 5.3÷6V; 4.5A; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 45W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.3...6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD3V3L2BT,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.4V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 3150 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.88 грн |
30+ | 9.94 грн |
100+ | 8.49 грн |
150+ | 6.58 грн |
405+ | 6.24 грн |
PESD3V3L2UM,315 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT883
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT883
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD3V3L4UF,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 30W; 5.32÷5.88V; 3A; unidirectional; SOT886
Type of diode: TVS
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.32...5.88V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SOT886
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD3V3L4UG,115 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 30W; SOT353; Features: ESD protection
Type of diode: TVS array
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT353
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 30W; SOT353; Features: ESD protection
Type of diode: TVS array
Peak pulse power dissipation: 30W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT353
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
на замовлення 1820 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.58 грн |
14+ | 19.71 грн |
25+ | 15.82 грн |
100+ | 13.49 грн |
140+ | 6.91 грн |
384+ | 6.58 грн |
PESD3V3L4UW,115 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; Features: ESD protection
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 3.5A
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT665
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Capacitance: 28pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 3.5A; SOT665; Features: ESD protection
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 3.5A
Semiconductor structure: common anode; quadruple; unidirectional
Case: SOT665
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Capacitance: 28pF
кількість в упаковці: 5 шт
на замовлення 2980 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
45+ | 6.36 грн |
100+ | 5.42 грн |
205+ | 4.72 грн |
565+ | 4.46 грн |
PESD3V3L5UY,115 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 2.5A; SOT363; Features: ESD protection
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SOT363
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Capacitance: 28pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 2.5A; SOT363; Features: ESD protection
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SOT363
Mounting: SMD
Leakage current: 0.3µA
Features of semiconductor devices: ESD protection
Capacitance: 28pF
кількість в упаковці: 5 шт
на замовлення 2265 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.63 грн |
25+ | 11.24 грн |
100+ | 9.74 грн |
130+ | 7.48 грн |
355+ | 7.07 грн |
PESD3V3S1UB,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 330W; 5.6V; 18A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 330W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 330W; 5.6V; 18A; unidirectional; SOD523
Type of diode: TVS
Peak pulse power dissipation: 330W
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
на замовлення 26319 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 14.16 грн |
45+ | 5.88 грн |
100+ | 5.09 грн |
238+ | 4.06 грн |
653+ | 3.84 грн |
PESD3V3S2UT,215 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; SOT23
Case: SOT23
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; double; unidirectional
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 330W
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.2÷6V; 18A; 330W; SOT23
Case: SOT23
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; double; unidirectional
Max. forward impulse current: 18A
Breakdown voltage: 5.2...6V
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 330W
кількість в упаковці: 5 шт
на замовлення 47235 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
45+ | 6.22 грн |
100+ | 4.74 грн |
230+ | 4.25 грн |
620+ | 4.08 грн |
3000+ | 4 грн |
PESD3V3S4UD,115 |
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6
Type of diode: TVS array
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: common anode; quadruple; unidirectional
Case: SC74; SOT457; TSOP6
Mounting: SMD
Leakage current: 0.8µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 200W; SC74,SOT457,TSOP6
Type of diode: TVS array
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: common anode; quadruple; unidirectional
Case: SC74; SOT457; TSOP6
Mounting: SMD
Leakage current: 0.8µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 1 шт
на замовлення 2781 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 15.6 грн |
25+ | 13.49 грн |
97+ | 9.99 грн |
266+ | 9.41 грн |
PESD3V3U1UA,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.6V; unidirectional; SOD323; Features: ESD protection
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.6V; unidirectional; SOD323; Features: ESD protection
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 10 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 26.89 грн |
25+ | 10.37 грн |
100+ | 7.16 грн |
160+ | 6.1 грн |
435+ | 5.76 грн |
PESD3V3U1UB,115 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.6V; unidirectional; SOD523; Features: ESD protection
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Capacitance: 3.1pF
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5.6V; unidirectional; SOD523; Features: ESD protection
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Capacitance: 3.1pF
кількість в упаковці: 5 шт
на замовлення 145 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 13.63 грн |
30+ | 9.68 грн |
100+ | 7.82 грн |
180+ | 5.41 грн |
495+ | 5.11 грн |
PESD3V3U1UL,315 |
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 3950 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.83 грн |
55+ | 4.91 грн |
100+ | 4.19 грн |
250+ | 3.92 грн |
500+ | 3.76 грн |
680+ | 3.71 грн |
2500+ | 3.57 грн |
PESD3V3U1UT,215 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Peak pulse power dissipation: 80W
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 1680 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.06 грн |
30+ | 8.64 грн |
100+ | 7.49 грн |
170+ | 5.76 грн |
460+ | 5.45 грн |
PESD3V3V1BLYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 25 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 10nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 25 шт
товар відсутній
PESD3V3X1BCSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; 8A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 10V
Max. forward impulse current: 8A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD3V3X1BL,315 |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 10000 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5÷7.8V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7.8V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
кількість в упаковці: 10000 шт
товар відсутній
PESD3V3Z1BCSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD3V6Z1BCSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD4V0Y1BSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.2÷8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 4.2...8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 4.2÷8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 4.2...8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD4V0Z1BCSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; 15A; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
товар відсутній
PESD4V0Z1BSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 9000 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 9000 шт
товар відсутній
PESD5V0C1BSFYL |
Виробник: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 8574 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.27 грн |
40+ | 7.26 грн |
100+ | 6.33 грн |
190+ | 5.09 грн |
520+ | 4.81 грн |