| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| PMBT3906MB,315 | NEXPERIA |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.59W Case: DFN1006B-3; SOT883B Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry кількість в упаковці: 10000 шт |
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PMBT3906VS,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 360mW; SOT666 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT666 Current gain: 180 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry кількість в упаковці: 5 шт |
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| PMBT3946VPN,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT666 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz кількість в упаковці: 4000 шт |
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PMBT3946YPN,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 60/40V Collector current: 0.2A Power dissipation: 0.35W Case: SC88; SOT363; TSSOP6 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz кількість в упаковці: 5 шт |
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PMBT4401,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry кількість в упаковці: 25 шт |
на замовлення 4400 шт: термін постачання 7-14 дні (днів) |
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PMBT4403,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry кількість в упаковці: 5 шт |
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PMBT4403YSX | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.55W Case: SC88; SOT363; TSSOP6 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
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PMBT5550,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB Kind of package: reel; tape Collector-emitter voltage: 140V Current gain: 250 Collector current: 0.3A Type of transistor: NPN Application: automotive industry Power dissipation: 0.25W Polarisation: bipolar Mounting: SMD Case: SOT23; TO236AB Frequency: 300MHz кількість в упаковці: 5 шт |
на замовлення 5260 шт: термін постачання 7-14 дні (днів) |
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PMBT5551,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB Kind of package: reel; tape Collector-emitter voltage: 160V Current gain: 30...250 Collector current: 0.3A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Mounting: SMD Case: SOT23; TO236AB кількість в упаковці: 5 шт |
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PMBT6429,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Application: automotive industry Collector-emitter voltage: 45V Current gain: 1250 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB Frequency: 700MHz кількість в упаковці: 5 шт |
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PMBTA06-QR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Application: automotive industry кількість в упаковці: 25 шт |
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PMBTA06,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 1355 шт: термін постачання 7-14 дні (днів) |
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PMBTA13,215 | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 5000...10000 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 5 шт |
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PMBTA14,215 | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 1 шт |
на замовлення 2805 шт: термін постачання 7-14 дні (днів) |
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PMBTA42,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3050 шт: термін постачання 7-14 дні (днів) |
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PMBTA42DS,125 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Case: SC74; SOT457; TSOP6 Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 1 шт |
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PMBTA44,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 20MHz кількість в упаковці: 1 шт |
на замовлення 2880 шт: термін постачання 7-14 дні (днів) |
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PMBTA45,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 300mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 0.3W Case: SOT23; TO236AB Pulsed collector current: 0.5A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 35MHz кількість в упаковці: 1 шт |
на замовлення 1010 шт: термін постачання 7-14 дні (днів) |
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PMBTA56-QR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Application: automotive industry кількість в упаковці: 25 шт |
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PMBTA56,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 835 шт: термін постачання 7-14 дні (днів) |
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PMBTA64,215 | NEXPERIA |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 250mW Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz кількість в упаковці: 1 шт |
на замовлення 2897 шт: термін постачання 7-14 дні (днів) |
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PMBTA92,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PMBTA92,235 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 0.2A Mounting: SMD Kind of package: reel; tape кількість в упаковці: 10000 шт |
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| PMCM4401UNEZ | NEXPERIA |
PMCM4401UNEZ SMD N channel transistors |
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| PMCM4401UPEZ | NEXPERIA |
PMCM4401UPEZ SMD P channel transistors |
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| PMCM4401VNEAZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 12V Drain current: 3A Pulsed drain current: 19A Case: WLCSP4 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 9000 шт |
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| PMCM4401VPEZ | NEXPERIA |
PMCM4401VPEZ SMD P channel transistors |
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| PMCM4402UPEZ | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.1A On-state resistance: 114mΩ Type of transistor: P-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 10nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Mounting: SMD Case: WLCSP4 кількість в упаковці: 9000 шт |
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| PMCM6501UPEZ | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A Drain-source voltage: -20V Drain current: -3.5A Case: WLCSP6 Polarisation: unipolar On-state resistance: 43mΩ Pulsed drain current: -22A Technology: Trench Kind of channel: enhanced Gate charge: 29nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET кількість в упаковці: 4500 шт |
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| PMCM6501VNEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 4.6A; Idm: 29A; WLCSP6 Drain-source voltage: 12V Drain current: 4.6A Case: WLCSP6 Polarisation: unipolar On-state resistance: 25mΩ Pulsed drain current: 29A Technology: Trench Kind of channel: enhanced Gate charge: 24nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 4500 шт |
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| PMCM6501VPEZ | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6 Drain-source voltage: -12V Drain current: -4A Case: WLCSP6 Polarisation: unipolar On-state resistance: 34mΩ Pulsed drain current: -25A Technology: Trench Kind of channel: enhanced Gate charge: 29.4nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET кількість в упаковці: 4500 шт |
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| PMCM650CUNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 16A Case: WLCSP6 Gate-source voltage: ±8V On-state resistance: 71mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 4500 шт |
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| PMCPB5530X,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 5.3/-4.5A Pulsed drain current: -14...12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12/±12V On-state resistance: 34/70mΩ Mounting: SMD Gate charge: 21.7/12.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMCXB1000UEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 590/-410mA Pulsed drain current: -1.7...2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 670mΩ/1.4Ω Mounting: SMD Gate charge: 1.05/1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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| PMCXB900UELZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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| PMCXB900UEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
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PMD2001D,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW Case: SC74; SOT457; TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.54W Collector-emitter voltage: 40V Collector current: 0.6A Semiconductor structure: common base; common emitter Current gain: 50...300 Type of transistor: NPN / PNP Polarisation: bipolar кількість в упаковці: 5 шт |
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PMD3001D,115 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6 Mounting: SMD Case: SC74; SOT457; TSOP6 Type of transistor: NPN / PNP Polarisation: bipolar Kind of package: reel; tape Collector current: 1A Collector-emitter voltage: 40V Pulsed collector current: 2A Semiconductor structure: common base; common emitter кількість в упаковці: 5 шт |
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| PMDPB30XN,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMDPB30XNZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.6A Pulsed drain current: 12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMDPB55XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -14A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 99mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMDPB56XNEAX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 12A Case: DFN2020D-6; SOT1118D Gate-source voltage: ±12V On-state resistance: 121mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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| PMDPB58UPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.4A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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| PMDPB70XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.9A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 137mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMDPB70XPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.1A Pulsed drain current: -12A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 112mΩ Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| PMDPB80XP,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.7A Pulsed drain current: -11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 148mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| PMDPB85UPE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 144mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| PMDPB95XNE2X | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Pulsed drain current: 11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
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| PMDT290UCE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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| PMDT290UCEH | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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| PMDT290UNE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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| PMDXB1200UPEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -260mA Pulsed drain current: -1.7A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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| PMDXB550UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.37A Pulsed drain current: 2.3A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1.17Ω Mounting: SMD Gate charge: 1.05nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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| PMDXB600UNELZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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| PMDXB600UNEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.4A Pulsed drain current: 2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 1Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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| PMDXB950UPEZ | NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -300mA Pulsed drain current: -2A Case: DFN1010B-6; SOT1216 On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| PMEG030V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Capacitance: 495pF Max. forward voltage: 0.45V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
товар відсутній |
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| PMEG030V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
товар відсутній |
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| PMEG040V030EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 4.2A Reverse recovery time: 11ns Semiconductor structure: single diode Capacitance: 130pF Max. forward voltage: 0.34V Case: CFP15; SOT1289 Kind of package: reel; tape Leakage current: 18mA Max. forward impulse current: 120A кількість в упаковці: 1 шт |
товар відсутній |
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| PMEG040V050EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Case: CFP15; SOT1289 Kind of package: reel; tape Max. forward impulse current: 120A кількість в упаковці: 1500 шт |
товар відсутній |
| PMBT3906MB,315 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 10000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.59W
Case: DFN1006B-3; SOT883B
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 10000 шт
товар відсутній
| PMBT3906VS,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 360mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 180
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
| PMBT3946VPN,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 4000 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT666
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 4000 шт
товар відсутній
| PMBT3946YPN,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60/40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 60/40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SC88; SOT363; TSSOP6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 5 шт
товар відсутній
| PMBT4401,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 25 шт
на замовлення 4400 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 2.37 грн |
| 150+ | 2.07 грн |
| 500+ | 1.8 грн |
| 700+ | 1.38 грн |
| 1925+ | 1.3 грн |
| PMBT4403,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
кількість в упаковці: 5 шт
товар відсутній
| PMBT4403YSX |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.6A; 550mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.55W
Case: SC88; SOT363; TSSOP6
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| PMBT5550,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 140V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 300MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 140V
Current gain: 250
Collector current: 0.3A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 300MHz
кількість в упаковці: 5 шт
на замовлення 5260 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 3.77 грн |
| 100+ | 3.27 грн |
| 405+ | 2.41 грн |
| 1105+ | 2.28 грн |
| PMBT5551,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 30...250
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Collector-emitter voltage: 160V
Current gain: 30...250
Collector current: 0.3A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT23; TO236AB
кількість в упаковці: 5 шт
товар відсутній
| PMBT6429,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Application: automotive industry
Collector-emitter voltage: 45V
Current gain: 1250
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 700MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Application: automotive industry
Collector-emitter voltage: 45V
Current gain: 1250
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 700MHz
кількість в упаковці: 5 шт
товар відсутній
| PMBTA06-QR |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 25 шт
товар відсутній
| PMBTA06,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 1355 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 85+ | 3.2 грн |
| 100+ | 2.64 грн |
| 480+ | 2.03 грн |
| 1310+ | 1.92 грн |
| 12000+ | 1.89 грн |
| PMBTA13,215 |
|
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 5 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 5000...10000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 5 шт
товар відсутній
| PMBTA14,215 |
|
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 1 шт
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 1 шт
на замовлення 2805 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 57+ | 4.76 грн |
| 65+ | 4.06 грн |
| 100+ | 3.74 грн |
| 235+ | 3.73 грн |
| PMBTA42,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3050 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 17.08 грн |
| 30+ | 8.67 грн |
| 44+ | 5.81 грн |
| 100+ | 4.15 грн |
| 250+ | 3.48 грн |
| 401+ | 2.41 грн |
| 1103+ | 2.28 грн |
| PMBTA42DS,125 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Case: SC74; SOT457; TSOP6
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 300V; 0.1A; SC74,SOT457,TSOP6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Case: SC74; SOT457; TSOP6
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| PMBTA44,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 20MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 20MHz
кількість в упаковці: 1 шт
на замовлення 2880 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 22.2 грн |
| 25+ | 15.95 грн |
| 88+ | 10.97 грн |
| 242+ | 10.36 грн |
| PMBTA45,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Pulsed collector current: 0.5A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 35MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Pulsed collector current: 0.5A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 35MHz
кількість в упаковці: 1 шт
на замовлення 1010 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 21.57 грн |
| 25+ | 16.12 грн |
| 82+ | 11.88 грн |
| 223+ | 11.23 грн |
| 3000+ | 11.1 грн |
| PMBTA56-QR |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 25 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
кількість в упаковці: 25 шт
товар відсутній
| PMBTA56,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 835 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 4.4 грн |
| 100+ | 2.94 грн |
| 480+ | 2.03 грн |
| 1310+ | 1.92 грн |
| PMBTA64,215 |
|
Виробник: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 1 шт
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
кількість в упаковці: 1 шт
на замовлення 2897 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.11 грн |
| 55+ | 4.77 грн |
| 250+ | 4.14 грн |
| 293+ | 3.3 грн |
| 804+ | 3.11 грн |
| PMBTA92,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 4.49 грн |
| 100+ | 3.87 грн |
| 325+ | 2.98 грн |
| 895+ | 2.82 грн |
| 12000+ | 2.78 грн |
| PMBTA92,235 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 0.2A
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
| PMCM4401VNEAZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3A
Pulsed drain current: 19A
Case: WLCSP4
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 9000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 3A; Idm: 19A; WLCSP4
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 3A
Pulsed drain current: 19A
Case: WLCSP4
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 9000 шт
товар відсутній
| PMCM4402UPEZ |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
кількість в упаковці: 9000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.1A; Idm: -13A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.1A
On-state resistance: 114mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Mounting: SMD
Case: WLCSP4
кількість в упаковці: 9000 шт
товар відсутній
| PMCM6501UPEZ |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
кількість в упаковці: 4500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A
Drain-source voltage: -20V
Drain current: -3.5A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 43mΩ
Pulsed drain current: -22A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
кількість в упаковці: 4500 шт
товар відсутній
| PMCM6501VNEZ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 4.6A; Idm: 29A; WLCSP6
Drain-source voltage: 12V
Drain current: 4.6A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 25mΩ
Pulsed drain current: 29A
Technology: Trench
Kind of channel: enhanced
Gate charge: 24nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 4500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 12V; 4.6A; Idm: 29A; WLCSP6
Drain-source voltage: 12V
Drain current: 4.6A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 25mΩ
Pulsed drain current: 29A
Technology: Trench
Kind of channel: enhanced
Gate charge: 24nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 4500 шт
товар відсутній
| PMCM6501VPEZ |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6
Drain-source voltage: -12V
Drain current: -4A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: -25A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29.4nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
кількість в упаковці: 4500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -12V; -4A; Idm: -25A; WLCSP6
Drain-source voltage: -12V
Drain current: -4A
Case: WLCSP6
Polarisation: unipolar
On-state resistance: 34mΩ
Pulsed drain current: -25A
Technology: Trench
Kind of channel: enhanced
Gate charge: 29.4nC
Gate-source voltage: ±8V
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Type of transistor: P-MOSFET
кількість в упаковці: 4500 шт
товар відсутній
| PMCM650CUNEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 16A
Case: WLCSP6
Gate-source voltage: ±8V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 4500 шт
товар відсутній
| PMCPB5530X,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 5.3/-4.5A
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.3/-4.5A
Pulsed drain current: -14...12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12/±12V
On-state resistance: 34/70mΩ
Mounting: SMD
Gate charge: 21.7/12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMCXB1000UEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 590/-410mA
Pulsed drain current: -1.7...2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 670mΩ/1.4Ω
Mounting: SMD
Gate charge: 1.05/1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMCXB900UELZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMCXB900UEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 400/-300mA
Pulsed drain current: -2...2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8/±8V
On-state resistance: 1/2.1Ω
Mounting: SMD
Gate charge: 700pC/2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMD2001D,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 0.6A; 540mW
Case: SC74; SOT457; TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.54W
Collector-emitter voltage: 40V
Collector current: 0.6A
Semiconductor structure: common base; common emitter
Current gain: 50...300
Type of transistor: NPN / PNP
Polarisation: bipolar
кількість в упаковці: 5 шт
товар відсутній
| PMD3001D,115 |
|
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 40V
Pulsed collector current: 2A
Semiconductor structure: common base; common emitter
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 40V
Pulsed collector current: 2A
Semiconductor structure: common base; common emitter
кількість в упаковці: 5 шт
товар відсутній
| PMDPB30XN,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB30XNZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.6A
Pulsed drain current: 12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB55XP,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.2A; Idm: -14A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -14A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB56XNEAX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 12A
Case: DFN2020D-6; SOT1118D
Gate-source voltage: ±12V
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB58UPE,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -14.4A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB70XP,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.9A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB70XPE,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.1A; Idm: -12A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.1A
Pulsed drain current: -12A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 112mΩ
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB80XP,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.7A; Idm: -11A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Pulsed drain current: -11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB85UPE,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -11.6A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±8V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMDPB95XNE2X |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Pulsed drain current: 11A
Case: DFN2020-6; HUSON6; SOT1118
Gate-source voltage: ±12V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| PMDT290UCE,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| PMDT290UCEH |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| PMDT290UNE,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
| PMDXB1200UPEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMDXB550UNEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.05nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMDXB600UNELZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMDXB600UNEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5000 шт
товар відсутній
| PMDXB950UPEZ |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1010B-6; SOT1216
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| PMEG030V030EPDZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 495pF
Max. forward voltage: 0.45V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
| PMEG030V050EPDZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній
| PMEG040V030EPDZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4.2A; 11ns; CFP15,SOT1289
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Capacitance: 130pF
Max. forward voltage: 0.34V
Case: CFP15; SOT1289
Kind of package: reel; tape
Leakage current: 18mA
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
| PMEG040V050EPDZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 5A; CFP15,SOT1289; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Case: CFP15; SOT1289
Kind of package: reel; tape
Max. forward impulse current: 120A
кількість в упаковці: 1500 шт
товар відсутній