| Фото | Назва | Виробник | Інформація |
Доступність |
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PN4393_D26Z | onsemi |
 Description: JFET N-CH 30V TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V |
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PN4393_D27Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V |
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PN4393_D74Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V |
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PN4393_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V |
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PN4416_D27Z | onsemi |
Description: JFET N-CH 30V TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Frequency: 400MHz Configuration: N-Channel Technology: JFET Noise Figure: 4dB Supplier Device Package: TO-92-3 Voltage - Rated: 30 V |
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PN5179_D26Z | onsemi |
Description: RF TRANS NPN 12V 2GHZ TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 15dB Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete |
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PN5432_D27Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
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PN5434_D26Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
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PN5434_D27Z | onsemi |
Description: JFET N-CH 25V 0.35W TO92 |
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PN918_D74Z | onsemi |
Description: RF TRANS NPN 15V 600MHZ TO92-3 |
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| QEE323 | onsemi |
Description: EMITTER RECTANGLE FOR QRD SWITCH Packaging: Box |
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QSB34CZR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Z-Bend Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 400nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Part Status: Active Voltage - DC Reverse (Vr) (Max): 32 V |
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| QSD2030FA4A0 | onsemi |
Description: SENSOR PHOTODIODE 880NM RADIAL Packaging: Tape & Reel (TR) Package / Case: Radial, 5mm Dia (T 1 3/4) Wavelength: 880nm Mounting Type: Through Hole Diode Type: Pin Operating Temperature: -40°C ~ 100°C Response Time: 5ns Viewing Angle: 40° Spectral Range: 700nm ~ 1100nm Active Area: 1.55mm² Current - Dark (Typ): 10nA Voltage - DC Reverse (Vr) (Max): 50 V |
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| QSD2030FA4R0 | onsemi |
Description: SENSOR PHOTODIODE 880NM RADIAL Packaging: Tape & Reel (TR) Package / Case: Radial, 5mm Dia (T 1 3/4) Wavelength: 880nm Mounting Type: Through Hole Diode Type: Pin Operating Temperature: -40°C ~ 100°C Response Time: 5ns Viewing Angle: 40° Spectral Range: 700nm ~ 1100nm Active Area: 1.55mm² Current - Dark (Typ): 10nA Voltage - DC Reverse (Vr) (Max): 50 V |
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RB751S40 | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
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RURD620CCS9A | onsemi |
Description: DIODE ARRAY GP 200V 6A DPAK |
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SG6516DZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Multi-Voltage Supervisor Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 4 Voltage - Threshold: 3.3V, 5V, 12V, 12V Supplier Device Package: 16-PDIP DigiKey Programmable: Not Verified |
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SG6516SZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Multi-Voltage Supervisor Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 4 Voltage - Threshold: 3.3V, 5V, 12V, 12V Supplier Device Package: 14-SOIC DigiKey Programmable: Not Verified |
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TIS75_D75Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
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TIS75_J35Z | onsemi |
Description: JFET N-CH 30V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
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,TO-226_straightlead.jpg "TN2219A_D26Z") |
TN2219A_D26Z | onsemi |
Description: TRANS NPN 40V 1A TO226 |
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TN2219A_J05Z | onsemi |
Description: TRANS NPN 40V 1A TO92-3 |
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,TO-226_straightlead.jpg "TN2907A_D26Z") |
TN2907A_D26Z | onsemi |
Description: TRANS PNP 60V 0.8A TO226 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-226 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
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TN4033A_D26Z | onsemi |
Description: TRANS PNP 80V 1A TO226 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: TO-226 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
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TN6714A_D26Z | onsemi |
Description: TRANS NPN 30V 2A TO226 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Supplier Device Package: TO-226 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
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TN6725A_D26Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 |
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TN6725A_D27Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 |
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TN6725A_D74Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Supplier Device Package: TO-226 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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TN6725A_D75Z | onsemi |
Description: TRANS NPN DARL 50V 1.2A TO226 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Supplier Device Package: TO-226 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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TN6726A_D26Z | onsemi |
Description: TRANS PNP 30V 1.5A TO226 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Supplier Device Package: TO-226 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
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U1898_D27Z | onsemi |
Description: JFET N-CH 40V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-92-3 Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V |
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ZTX749A_J05Z | onsemi |
Description: TRANS PNP 35V 2A TO92-3 |
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ZTX749A_J61Z | onsemi |
Description: TRANS PNP 35V 2A TO92-3 |
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ZTX749_D27Z | onsemi |
Description: TRANS PNP 25V 2A TO226 |
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ZTX749_J61Z | onsemi |
Description: TRANS PNP 25V 2A TO92-3 |
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FDP3205 | onsemi |
Description: MOSFET N-CH 55V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V |
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FDP150N10 | onsemi |
Description: MOSFET N-CH 100V 57A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V |
на замовлення 227 шт: термін постачання 21-31 дні (днів) |
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FSBB20CH60L | onsemi |
Description: MODULE SPM 600V 20A SPM27-CB Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
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FSBF15CH60BTL | onsemi |
Description: MODULE SPM 600V 15A SPM27-JB |
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FQPF6N90CT | onsemi |
Description: MOSFET N-CH 900V 6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
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FQPF9N90CT | onsemi |
Description: MOSFET N-CH 900V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
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FDMA410NZ | onsemi |
Description: MOSFET N-CH 20V 9.5A 6MICROFET |
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FDY1002PZ | onsemi |
Description: MOSFET 2P-CH 20V 830MA SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 446mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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FDY102PZ | onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
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FDY6342L | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 280mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 8V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 830mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-563F Part Status: Obsolete |
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FGH20N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 165 W |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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FGH20N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/87ns Switching Energy: 380µJ (on), 260µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 63 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 165 W |
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FDMA410NZ | onsemi |
Description: MOSFET N-CH 20V 9.5A 6MICROFET |
на замовлення 2051 шт: термін постачання 21-31 дні (днів) |
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FDY1002PZ | onsemi |
Description: MOSFET 2P-CH 20V 830MA SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 446mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 830mA Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
на замовлення 24605 шт: термін постачання 21-31 дні (днів) |
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FDY102PZ | onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
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FDY6342L | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 280mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 8V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 830mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-563F Part Status: Obsolete |
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MM5Z12V | onsemi |
Description: DIODE ZENER 12V 200MW SOD523F |
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MM5Z15V | onsemi |
Description: DIODE ZENER 15V 200MW SOD523F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-523F Part Status: Obsolete Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
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MM5Z20V | onsemi |
Description: DIODE ZENER 20V 200MW SOD523F |
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MM5Z22V | onsemi |
Description: DIODE ZENER 22V 200MW SOD523F Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
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MM5Z27V | onsemi |
Description: DIODE ZENER 27V 200MW SOD523F |
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MM5Z2V4 | onsemi |
Description: DIODE ZENER 2.4V 200MW SOD523F |
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MM5Z6V2 | onsemi |
Description: DIODE ZENER 6.2V 200MW SOD523F Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
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ADM1032ARMZ-001 | onsemi |
Description: SENSOR DIGITAL 0C-100C MICRO8 Packaging: Tube Features: Output Switch, Programmable Limit, Standby Mode Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: 0°C ~ 120°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Digital, Local/Remote Resolution: 7 b Supplier Device Package: 8-MSOP Test Condition: 0°C ~ 100°C Accuracy - Highest (Lowest): ±3°C Sensing Temperature - Local: 0°C ~ 100°C Sensing Temperature - Remote: 0°C ~ 120°C |
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ADM1032ARMZ-002 | onsemi |
Description: SENSOR DIGITAL 0C-100C MICRO8 Packaging: Tube Features: Output Switch, Programmable Limit, Standby Mode Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: 0°C ~ 120°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Digital, Local/Remote Resolution: 7 b Supplier Device Package: 8-MSOP Test Condition: 0°C ~ 100°C Accuracy - Highest (Lowest): ±3°C Sensing Temperature - Local: 0°C ~ 100°C Sensing Temperature - Remote: 0°C ~ 120°C |
товар відсутній |
| PN4393_D26Z |
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Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
| PN4393_D27Z |
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Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
| PN4393_D74Z |
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Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
| PN4393_D75Z |
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Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товар відсутній
| PN4416_D27Z |
Виробник: onsemi
Description: JFET N-CH 30V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Description: JFET N-CH 30V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Frequency: 400MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 4dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
товар відсутній
| PN5179_D26Z |
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Виробник: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 15dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
товар відсутній
| QSB34CZR |
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Виробник: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Z-Bend
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 400nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 32 V
товар відсутній
| QSD2030FA4A0 |
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Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
товар відсутній
| QSD2030FA4R0 |
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Виробник: onsemi
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
Description: SENSOR PHOTODIODE 880NM RADIAL
Packaging: Tape & Reel (TR)
Package / Case: Radial, 5mm Dia (T 1 3/4)
Wavelength: 880nm
Mounting Type: Through Hole
Diode Type: Pin
Operating Temperature: -40°C ~ 100°C
Response Time: 5ns
Viewing Angle: 40°
Spectral Range: 700nm ~ 1100nm
Active Area: 1.55mm²
Current - Dark (Typ): 10nA
Voltage - DC Reverse (Vr) (Max): 50 V
товар відсутній
| RB751S40 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 30MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товар відсутній
| SG6516DZ |
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Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 4 CHANNEL 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 16-PDIP
DigiKey Programmable: Not Verified
товар відсутній
| SG6516SZ |
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Виробник: onsemi
Description: IC SUPERVISOR 4 CHANNEL 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 4 CHANNEL 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Multi-Voltage Supervisor
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 4
Voltage - Threshold: 3.3V, 5V, 12V, 12V
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
товар відсутній
| TIS75_D75Z |
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 30V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
| TIS75_J35Z |
Виробник: onsemi
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 30V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 4 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
| TN2907A_D26Z |
Виробник: onsemi
Description: TRANS PNP 60V 0.8A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
| TN4033A_D26Z |
|
Виробник: onsemi
Description: TRANS PNP 80V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 1A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
| TN6714A_D26Z |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS NPN 30V 2A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
товар відсутній
| TN6725A_D74Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
| TN6725A_D75Z |
|
Виробник: onsemi
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1.2A TO226
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-226
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
| TN6726A_D26Z |
|
Виробник: onsemi
Description: TRANS PNP 30V 1.5A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 1.5A TO226
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
товар відсутній
| U1898_D27Z |
|
Виробник: onsemi
Description: JFET N-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Description: JFET N-CH 40V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
товар відсутній
| FDP3205 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 59A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
товар відсутній
| FDP150N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Description: MOSFET N-CH 100V 57A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.32 грн |
| 50+ | 134.18 грн |
| 100+ | 110.4 грн |
| FSBB20CH60L |
|
Виробник: onsemi
Description: MODULE SPM 600V 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: MODULE SPM 600V 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
товар відсутній
| FQPF6N90CT |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 900V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
| FQPF9N90CT |
|
Виробник: onsemi
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
товар відсутній
| FDY1002PZ |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.15 грн |
| 6000+ | 11.11 грн |
| 9000+ | 10.31 грн |
| FDY102PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
товар відсутній
| FDY6342L |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
товар відсутній
| FGH20N60SFDTU |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/90ns
Switching Energy: 370µJ (on), 160µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| FGH20N60UFDTU |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
Description: IGBT FIELD STOP 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 13ns/87ns
Switching Energy: 380µJ (on), 260µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 165 W
товар відсутній
| FDMA410NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 9.5A 6MICROFET
Description: MOSFET N-CH 20V 9.5A 6MICROFET
на замовлення 2051 шт:
термін постачання 21-31 дні (днів)| FDY1002PZ |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2P-CH 20V 830MA SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 24605 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.11 грн |
| 10+ | 29.69 грн |
| 100+ | 20.63 грн |
| 500+ | 15.11 грн |
| 1000+ | 12.28 грн |
| FDY102PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
товар відсутній
| FDY6342L |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
Description: IC PWR SWITCH P-CHAN 1:1 SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 280mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 830mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-563F
Part Status: Obsolete
товар відсутній
| MM5Z15V |
|
Виробник: onsemi
Description: DIODE ZENER 15V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Part Status: Obsolete
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER 15V 200MW SOD523F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523F
Part Status: Obsolete
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
товар відсутній
| MM5Z22V |
|
Виробник: onsemi
Description: DIODE ZENER 22V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: DIODE ZENER 22V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
товар відсутній
| MM5Z6V2 |
|
Виробник: onsemi
Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 200MW SOD523F
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
товар відсутній
| ADM1032ARMZ-001 |
|
Виробник: onsemi
Description: SENSOR DIGITAL 0C-100C MICRO8
Packaging: Tube
Features: Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 120°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 7 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Sensing Temperature - Local: 0°C ~ 100°C
Sensing Temperature - Remote: 0°C ~ 120°C
Description: SENSOR DIGITAL 0C-100C MICRO8
Packaging: Tube
Features: Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 120°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 7 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Sensing Temperature - Local: 0°C ~ 100°C
Sensing Temperature - Remote: 0°C ~ 120°C
товар відсутній
| ADM1032ARMZ-002 |
|
Виробник: onsemi
Description: SENSOR DIGITAL 0C-100C MICRO8
Packaging: Tube
Features: Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 120°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 7 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Sensing Temperature - Local: 0°C ~ 100°C
Sensing Temperature - Remote: 0°C ~ 120°C
Description: SENSOR DIGITAL 0C-100C MICRO8
Packaging: Tube
Features: Output Switch, Programmable Limit, Standby Mode
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 120°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 7 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Sensing Temperature - Local: 0°C ~ 100°C
Sensing Temperature - Remote: 0°C ~ 120°C
товар відсутній