Результат пошуку "Irfbc40" : 94
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| Фото | Назва | Виробник | Інформація |
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IRFBC40APBF | Vishay |
 Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB |
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IRFBC40APBF-BE3 | Vishay |
Trans MOSFET N-CH 600V 6.2A |
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IRFBC40ASPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK |
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| IRFBC40ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFBC40ASTRLPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40ASTRLPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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| IRFBC40ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFBC40ASTRRPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40ASTRRPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40ASTRRPBF | Vishay Semiconductors |
MOSFET N-Chan 600V 6.2 Amp |
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IRFBC40LCPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB |
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IRFBC40LCPBF-BE3 | Vishay |
Trans MOSFET N-CH 600V 6.2A |
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IRFBC40LPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-262 |
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IRFBC40LPBF | Vishay Semiconductors |
 MOSFET 600V N-CH HEXFET TO-26 |
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IRFBC40PBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB |
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IRFBC40PBF-BE3 | Vishay |
Trans MOSFET N-CH 600V 6.2A |
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IRFBC40SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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IRFBC40SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.9A Pulsed drain current: 25A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRFBC40SPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK |
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IRFBC40SPBF | Vishay |
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com |
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IRFBC40SPBF | Vishay |
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com |
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| IRFBC40STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFBC40STRLPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40STRLPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40STRLPBF | Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
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IRFBC40APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm кількість в упаковці: 15000 шт |
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| IRFBC40ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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| IRFBC40ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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| IRFBC40STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 25A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
| IRFBC40ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFBC40ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFBC40SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFBC40SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.9A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IRFBC40SPBF |
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Виробник: Vishay
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com
товар відсутній
| IRFBC40SPBF |
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Виробник: Vishay
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com
IRFBC40SPBF Vishay MOSFETs Transistor N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Arrow.com
товар відсутній
| IRFBC40STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFBC40APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 15000 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
кількість в упаковці: 15000 шт
товар відсутній
| IRFBC40ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| IRFBC40ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| IRFBC40STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
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