Результат пошуку "stp12" : 164
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
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| STP12N80K5 | STMicroelectronics | STP12N80K5 |
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| STP12NK30Z | STMicroelectronics |
 Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube |
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STP12NK30Z | STMicroelectronics |
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube |
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STP12NK60Z | STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
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STP12NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 640mOhm @ 5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V |
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STP12NM50FD | STMicroelectronics |
Description: MOSFET N-CH 500V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
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| STP12NM50FP | STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube |
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STP12NM50FP | STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube |
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STP12NM50FP | STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube |
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STP12NM50FPXXXXX | STMicroelectronics |
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube |
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STP12NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V |
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STP12NM50N | STMicroelectronics |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP12NM60N | STMicroelectronics |
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube |
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STP12NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V |
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STP12PF06 | STMicroelectronics |
Description: MOSFET P-CH 60V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
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STP12PF06 | STMicroelectronics |
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220AB Tube |
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5STP 12.5-R | Bel Fuse |
Cartridge Fuses |
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| 5STP 125 | Bel Fuse Inc. |
Description: FUSE GLASS 125MA 250VAC 5X20MM Packaging: Bulk Package / Case: 5mm x 20mm (Axial) Size / Dimension: 0.217" Dia x 0.827" L (5.50mm x 21.00mm) Fuse Type: Cartridge, Glass Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Response Time: Slow Blow Approval Agency: CE, CSA, IMQ, SEMKO, UL, VDE Breaking Capacity @ Rated Voltage: 35A Current Rating (Amps): 125 mA Voltage Rating - AC: 250 V Melting I²t: 0.05 |
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5STP 125-R | Bel Fuse |
Cartridge Fuses |
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5STP 12F4200 | ABB |
Category: Button thyristors Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA Case: Ø75/47mm Mounting: Press-Pack Max. off-state voltage: 4.2kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 17.3kA Load current: 1.15kA Max. load current: 1.8kA |
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5STP 12F4200 | ABB |
Category: Button thyristors Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA Case: Ø75/47mm Mounting: Press-Pack Max. off-state voltage: 4.2kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 17.3kA Load current: 1.15kA Max. load current: 1.8kA кількість в упаковці: 1 шт |
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| 5STP 12K6500 | ABB |
Category: Button thyristors Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA Case: Ø102/63mm Mounting: Press-Pack Max. off-state voltage: 6.5kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 31.5kA Load current: 1.43kA Max. load current: 2.25kA |
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| 5STP 12K6500 | ABB |
Category: Button thyristors Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA Case: Ø102/63mm Mounting: Press-Pack Max. off-state voltage: 6.5kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 31.5kA Load current: 1.43kA Max. load current: 2.25kA кількість в упаковці: 1 шт |
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| HSTP122153A | Essentra | Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:SILICON NATURAL |
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| HSTP122153C | Essentra | Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:EPDM BLACK |
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STEVAL-ISA041V1 | STMicroelectronics |
Description: BOARD EVAL STP12IE95F4 Packaging: Box Voltage - Output: 19V Voltage - Input: 240V ~ 400V Current - Output: 6.6A Frequency - Switching: 55kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: L6565, STP12IE95F4 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 125 W |
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STEVAL-ISA165V1 | STMicroelectronics |
Power Management IC Development Tools Evaluation board: SRK2001 adaptive synchronous rectification controller for LLC |
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STEVAL-ISC002V1 | STMicroelectronics |
Description: BOARD ADAPTER L6599/STP12NM50N Packaging: Bulk Voltage - Output: 19V Voltage - Input: 90 ~ 264 VAC Current - Output: 4.74A Regulator Topology: Resonant Board Type: Fully Populated Utilized IC / Part: L6563, L6599 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 90 W |
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| STP12NK30Z |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP12NK30Z |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP12NK60Z |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP12NK60Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 640mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 640mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
товар відсутній
| STP12NM50FD |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
товар відсутній
| STP12NM50FP |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| STP12NM50FP |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| STP12NM50FP |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| STP12NM50FPXXXXX |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
| STP12NM50N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 50 V
товар відсутній
| STP12NM50N |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP12NM60N |
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Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| STP12NM60N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
товар відсутній
| STP12PF06 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Description: MOSFET P-CH 60V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
товар відсутній
| STP12PF06 |
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Виробник: STMicroelectronics
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220AB Tube
товар відсутній
| 5STP 125 |
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Виробник: Bel Fuse Inc.
Description: FUSE GLASS 125MA 250VAC 5X20MM
Packaging: Bulk
Package / Case: 5mm x 20mm (Axial)
Size / Dimension: 0.217" Dia x 0.827" L (5.50mm x 21.00mm)
Fuse Type: Cartridge, Glass
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Slow Blow
Approval Agency: CE, CSA, IMQ, SEMKO, UL, VDE
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 125 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.05
Description: FUSE GLASS 125MA 250VAC 5X20MM
Packaging: Bulk
Package / Case: 5mm x 20mm (Axial)
Size / Dimension: 0.217" Dia x 0.827" L (5.50mm x 21.00mm)
Fuse Type: Cartridge, Glass
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Response Time: Slow Blow
Approval Agency: CE, CSA, IMQ, SEMKO, UL, VDE
Breaking Capacity @ Rated Voltage: 35A
Current Rating (Amps): 125 mA
Voltage Rating - AC: 250 V
Melting I²t: 0.05
товар відсутній
| 5STP 12F4200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
товар відсутній
| 5STP 12F4200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
кількість в упаковці: 1 шт
товар відсутній
| 5STP 12K6500 |
|
Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
товар відсутній
| 5STP 12K6500 |
|
Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
кількість в упаковці: 1 шт
товар відсутній
| HSTP122153A |
Виробник: Essentra
Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:SILICON NATURAL
Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:SILICON NATURAL
товар відсутній
| HSTP122153C |
Виробник: Essentra
Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:EPDM BLACK
Conduit Fittings & Accessories TAPERED PLUG - HOLLOWED:EPDM BLACK
товар відсутній
| STEVAL-ISA041V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL STP12IE95F4
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 240V ~ 400V
Current - Output: 6.6A
Frequency - Switching: 55kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: L6565, STP12IE95F4
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 125 W
Description: BOARD EVAL STP12IE95F4
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 240V ~ 400V
Current - Output: 6.6A
Frequency - Switching: 55kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: L6565, STP12IE95F4
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 125 W
товар відсутній
| STEVAL-ISA165V1 |
|
Виробник: STMicroelectronics
Power Management IC Development Tools Evaluation board: SRK2001 adaptive synchronous rectification controller for LLC
Power Management IC Development Tools Evaluation board: SRK2001 adaptive synchronous rectification controller for LLC
товар відсутній
| STEVAL-ISC002V1 |
|
Виробник: STMicroelectronics
Description: BOARD ADAPTER L6599/STP12NM50N
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 4.74A
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: L6563, L6599
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 90 W
Description: BOARD ADAPTER L6599/STP12NM50N
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 4.74A
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: L6563, L6599
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 90 W
товар відсутній