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IXTY1R4N120P IXTY1R4N120P IXYS IXTA(P,Y)1R4N120P_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120PHV IXTY1R4N120PHV IXYS IXTA(P,Y)1R4N120P_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf IXTY1R6N100D2 SMD N channel transistors
товар відсутній
IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTY26P10T IXTY26P10T IXYS IXT_26P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
1+273.67 грн
5+ 237.68 грн
6+ 173.34 грн
16+ 164.09 грн
IXTY2N100P IXTY2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)
2+214.77 грн
5+ 187 грн
7+ 143.05 грн
19+ 135.48 грн
Мінімальне замовлення: 2
IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
кількість в упаковці: 1 шт
товар відсутній
IXTY2P50PA IXYS media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf IXTY2P50PA SMD P channel transistors
товар відсутній
IXTY32P05T IXTY32P05T IXYS IXT_32P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
кількість в упаковці: 1 шт
товар відсутній
IXTY3N50P IXTY3N50P IXYS IXTA3N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 104 шт:
термін постачання 7-14 дні (днів)
6+50.75 грн
7+ 43.43 грн
10+ 41.65 грн
Мінімальне замовлення: 6
IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
товар відсутній
IXTY48P05T IXYS littelfuse_discrete_mosfets_p-channel_ixt_48p05t_datasheet.pdf.pdf IXTY48P05T SMD P channel transistors
товар відсутній
IXTY4N65X2 IXTY4N65X2 IXYS IXT_4N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)
2+202.08 грн
10+ 109.23 грн
26+ 101.82 грн
70+ 99.29 грн
Мінімальне замовлення: 2
IXTY8N65X2 IXTY8N65X2 IXYS IXT_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 7-14 дні (днів)
2+169.46 грн
5+ 145.06 грн
8+ 125.38 грн
22+ 118.65 грн
70+ 116.96 грн
Мінімальне замовлення: 2
IXTY8N70X2 IXTY8N70X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO252; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO252
On-state resistance: 500mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
IXTZ550N055T2 IXYS IXTZ550N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXXA50N60B3 IXXA50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH100N60B3 IXXH100N60B3 IXYS IXXH100N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXXH100N60C3 IXXH100N60C3 IXYS IXXH100N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXXH110N65C4 IXXH110N65C4 IXYS IXXH110N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)
1+770.27 грн
2+ 546.14 грн
6+ 497.31 грн
IXXH140N65B4 IXXH140N65B4 IXYS IXXH140N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
кількість в упаковці: 1 шт
товар відсутній
IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 7-14 дні (днів)
1+772.08 грн
2+ 533.04 грн
6+ 485.53 грн
IXXH30N60B3 IXXH30N60B3 IXYS IXXH30N60B3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 7-14 дні (днів)
1+654.27 грн
3+ 467.5 грн
7+ 425.78 грн
IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4 IXXH40N65B4 IXYS IXXH40N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
на замовлення 171 шт:
термін постачання 7-14 дні (днів)
1+461.25 грн
3+ 400.21 грн
4+ 307.14 грн
9+ 290.31 грн
IXXH40N65B4D1 IXXH40N65B4D1 IXYS IXXH40N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1 IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 7-14 дні (днів)
1+578.15 грн
3+ 400.21 грн
8+ 364.36 грн
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
1+1041.22 грн
2+ 752.37 грн
3+ 723.66 грн
4+ 684.95 грн
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3 IXXH75N60C3 IXYS IXXH75N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3D1 IXXH75N60C3D1 IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4 IXXH80N65B4 IXYS IXXH80N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4D1 IXXH80N65B4D1 IXYS IXXH80N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4H1 IXXH80N65B4H1 IXYS IXXH80N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60B3H1 IXXK100N60B3H1 IXYS IXXK(X)100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60C3H1 IXXK100N60C3H1 IXYS IXXK100N60C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK200N60B3 IXYS IXXK(X)200N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK200N65B4 IXYS IXXK(x)200N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3 IXYS IXXN200N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120P IXTA(P,Y)1R4N120P_HV.pdf
IXTY1R4N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R4N120PHV IXTA(P,Y)1R4N120P_HV.pdf
IXTY1R4N120PHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
кількість в упаковці: 1 шт
товар відсутній
IXTY1R6N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n100_datasheet.pdf.pdf
Виробник: IXYS
IXTY1R6N100D2 SMD N channel transistors
товар відсутній
IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
товар відсутній
IXTY26P10T IXT_26P10T.pdf
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+273.67 грн
5+ 237.68 грн
6+ 173.34 грн
16+ 164.09 грн
IXTY2N100P IXTA(P,Y)2N100P.pdf
IXTY2N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+214.77 грн
5+ 187 грн
7+ 143.05 грн
19+ 135.48 грн
Мінімальне замовлення: 2
IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
кількість в упаковці: 1 шт
товар відсутній
IXTY2P50PA media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf
Виробник: IXYS
IXTY2P50PA SMD P channel transistors
товар відсутній
IXTY32P05T IXT_32P05T.pdf
IXTY32P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 26ns
кількість в упаковці: 1 шт
товар відсутній
IXTY3N50P IXTA3N50P-DTE.pdf
IXTY3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
кількість в упаковці: 1 шт
на замовлення 104 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
6+50.75 грн
7+ 43.43 грн
10+ 41.65 грн
Мінімальне замовлення: 6
IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
кількість в упаковці: 1 шт
товар відсутній
IXTY48P05T littelfuse_discrete_mosfets_p-channel_ixt_48p05t_datasheet.pdf.pdf
Виробник: IXYS
IXTY48P05T SMD P channel transistors
товар відсутній
IXTY4N65X2 IXT_4N65X2.pdf
IXTY4N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+202.08 грн
10+ 109.23 грн
26+ 101.82 грн
70+ 99.29 грн
Мінімальне замовлення: 2
IXTY8N65X2 IXT_8N65X2.pdf
IXTY8N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+169.46 грн
5+ 145.06 грн
8+ 125.38 грн
22+ 118.65 грн
70+ 116.96 грн
Мінімальне замовлення: 2
IXTY8N70X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_8n70x2_datasheet.pdf.pdf
IXTY8N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO252; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO252
On-state resistance: 500mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
IXTZ550N055T2 IXTZ550N055T2.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
IXXA50N60B3 IXXA(p,h)50N60B3.pdf
IXXA50N60B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH100N60B3 IXXH100N60B3.pdf
IXXH100N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXXH100N60C3 IXXH100N60C3.pdf
IXXH100N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
IXXH110N65C4 IXXH110N65C4.pdf
IXXH110N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+770.27 грн
2+ 546.14 грн
6+ 497.31 грн
IXXH140N65B4 IXXH140N65B4.pdf
IXXH140N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
кількість в упаковці: 1 шт
товар відсутній
IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+772.08 грн
2+ 533.04 грн
6+ 485.53 грн
IXXH30N60B3 IXXH30N60B3-DTE.pdf
IXXH30N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+654.27 грн
3+ 467.5 грн
7+ 425.78 грн
IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4 IXXH40N65B4.pdf
IXXH40N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
на замовлення 171 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+461.25 грн
3+ 400.21 грн
4+ 307.14 грн
9+ 290.31 грн
IXXH40N65B4D1 IXXH40N65B4D1.pdf
IXXH40N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1.pdf
IXXH40N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+578.15 грн
3+ 400.21 грн
8+ 364.36 грн
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1041.22 грн
2+ 752.37 грн
3+ 723.66 грн
4+ 684.95 грн
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3 IXXH75N60C3.pdf
IXXH75N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3D1 IXXH75N60C3D1.pdf
IXXH75N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4 IXXH80N65B4.pdf
IXXH80N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4D1 IXXH80N65B4D1.pdf
IXXH80N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4H1 IXXH80N65B4H1.pdf
IXXH80N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60B3H1 IXXK(X)100N60B3H1.pdf
IXXK100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60C3H1 IXXK100N60C3H1.pdf
IXXK100N60C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK(X)200N60B3.pdf
IXXK200N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK(x)200N65B4.pdf
IXXK200N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK(x)300N60C3.pdf
IXXK300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3.pdf
IXXN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
кількість в упаковці: 1 шт
товар відсутній
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