| Фото | Назва | Виробник | Інформація |
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IXTR102N65X2 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Power dissipation: 330W Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 54A On-state resistance: 33mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXTR120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 595W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 32mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXTR140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Mounting: THT Case: ISOPLUS247™ Reverse recovery time: 130ns Drain-source voltage: -100V Drain current: -110A On-state resistance: 11mΩ Type of transistor: P-MOSFET Power dissipation: 270W Polarisation: unipolar Kind of package: tube Gate charge: 400nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V кількість в упаковці: 1 шт |
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IXTR16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 92nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 440ns Drain-source voltage: -600V Drain current: -10A On-state resistance: 0.79Ω Type of transistor: P-MOSFET Power dissipation: 190W Polarisation: unipolar кількість в упаковці: 1 шт |
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IXTR170P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 240nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 176ns Drain-source voltage: -100V Drain current: -100A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Power dissipation: 312W Polarisation: unipolar кількість в упаковці: 300 шт |
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| IXTR20P50P | IXYS |
IXTR20P50P THT P channel transistors |
на замовлення 32 шт: термін постачання 7-14 дні (днів) |
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IXTR210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Technology: TrenchP™ Mounting: THT Reverse recovery time: 200ns Case: ISOPLUS247™ Kind of package: tube Power dissipation: 390W Drain-source voltage: -100V Drain current: -195A On-state resistance: 8mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 7-14 дні (днів) |
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IXTR32P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns Reverse recovery time: 480ns Drain-source voltage: -600V Drain current: -18A On-state resistance: 0.385Ω Type of transistor: P-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: tube Gate charge: 196nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: ISOPLUS247™ кількість в упаковці: 1 шт |
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| IXTR36P15P | IXYS |
IXTR36P15P THT P channel transistors |
на замовлення 52 шт: термін постачання 7-14 дні (днів) |
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IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -22A Power dissipation: 312W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 477ns кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 7-14 дні (днів) |
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IXTR48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 93mΩ Drain current: -30A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 190W кількість в упаковці: 1 шт |
на замовлення 58 шт: термін постачання 7-14 дні (днів) |
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IXTR62N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 150W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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IXTR90P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -57A Power dissipation: 190W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns кількість в упаковці: 1 шт |
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IXTR90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -53A Power dissipation: 312W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 315ns кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 7-14 дні (днів) |
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IXTT02N450HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us Case: TO268HV Mounting: SMD Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω кількість в упаковці: 1 шт |
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IXTT10N100D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Pulsed drain current: 20A Power dissipation: 400W Case: TO268 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 850ns кількість в упаковці: 1 шт |
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IXTT10N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO268 On-state resistance: 1.5Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 70ns кількість в упаковці: 1 шт |
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IXTT10P60 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns Mounting: SMD Reverse recovery time: 0.5µs Case: TO268 Kind of package: tube Power dissipation: 300W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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IXTT110N10L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 600W Case: TO268 On-state resistance: 18mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 230ns кількість в упаковці: 1 шт |
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IXTT110N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns кількість в упаковці: 1 шт |
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IXTT11P50 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTT12N150 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us Drain-source voltage: 1.5kV Drain current: 12A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 106nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: TO268 Reverse recovery time: 1.2µs кількість в упаковці: 1 шт |
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IXTT12N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us Drain-source voltage: 1.5kV Drain current: 12A Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 106nC Kind of channel: enhanced Mounting: SMD Case: TO268HV Reverse recovery time: 1.2µs кількість в упаковці: 1 шт |
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IXTT140N075L2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO268HV On-state resistance: 11mΩ Mounting: SMD Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXTT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
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IXTT140P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO268 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: SMD Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns кількість в упаковці: 1 шт |
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IXTT16N10D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 830W Case: TO268 On-state resistance: 64mΩ Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 940ns кількість в упаковці: 1 шт |
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IXTT16N20D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO268; 607ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 80mΩ Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 607ns кількість в упаковці: 1 шт |
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IXTT16N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO268 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 130ns кількість в упаковці: 1 шт |
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IXTT16P60P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268 Mounting: SMD Case: TO268 Technology: PolarP™ Drain current: -16A Kind of channel: enhanced Drain-source voltage: -600V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 720mΩ Reverse recovery time: 440ns Power dissipation: 460W Gate charge: 92nC Polarisation: unipolar кількість в упаковці: 1 шт |
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IXTT170N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Power dissipation: 715W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 198nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
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IXTT1N250HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 250W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: SMD Gate charge: 41nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.5µs кількість в упаковці: 1 шт |
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IXTT1N300P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us Case: TO268HV Mounting: SMD On-state resistance: 50Ω Reverse recovery time: 1.8µs Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube кількість в упаковці: 1 шт |
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IXTT1N450HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1A Power dissipation: 520W Case: TO268HV On-state resistance: 80Ω Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs кількість в упаковці: 1 шт |
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| IXTT20P50P | IXYS |
IXTT20P50P SMD P channel transistors |
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IXTT24P20 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns Mounting: SMD Case: TO268 Kind of package: tube Power dissipation: 300W Gate charge: 150nC Polarisation: unipolar Drain current: -24A Kind of channel: enhanced Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.15Ω Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 198 шт: термін постачання 7-14 дні (днів) |
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IXTT26N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 400W Case: TO268 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXTT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTT2N170D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 2A Power dissipation: 568W Case: TO268 On-state resistance: 6.5Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 80ns кількість в упаковці: 1 шт |
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IXTT2N300P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns Mounting: SMD Case: TO268HV Polarisation: unipolar Drain-source voltage: 3kV Reverse recovery time: 400ns Kind of package: tube Drain current: 2A Features of semiconductor devices: standard power mosfet Gate charge: 73nC Kind of channel: enhanced On-state resistance: 21Ω Type of transistor: N-MOSFET Power dissipation: 520W кількість в упаковці: 1 шт |
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IXTT30N50L | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet кількість в упаковці: 1 шт |
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IXTT30N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet кількість в упаковці: 1 шт |
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IXTT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet кількість в упаковці: 1 шт |
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IXTT30N60L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 335nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 710ns кількість в упаковці: 1 шт |
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IXTT30N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTT34N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns Mounting: SMD Case: TO268HV Kind of package: tube Power dissipation: 540W Reverse recovery time: 390ns Drain-source voltage: 650V Drain current: 34A On-state resistance: 96mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 54nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXTT360N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns Reverse recovery time: 78ns Drain-source voltage: 55V Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 935W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
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| IXTT36N50P | IXYS |
IXTT36N50P SMD N channel transistors |
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IXTT3N200P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2kV Drain current: 3A Power dissipation: 520W Case: TO268HV On-state resistance: 8Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 420ns кількість в упаковці: 1 шт |
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IXTT40N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 0.32µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTT440N04T4HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 440A Power dissipation: 940W Case: TO268HV On-state resistance: 1.25mΩ Mounting: SMD Gate charge: 480nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns кількість в упаковці: 1 шт |
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IXTT440N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO268 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns кількість в упаковці: 1 шт |
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IXTT48P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 85mΩ Drain current: -48A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 462W кількість в упаковці: 1 шт |
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IXTT4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: SMD Case: TO268HV Reverse recovery time: 900ns кількість в упаковці: 1 шт |
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| IXTT500N04T2 | IXYS |
IXTT500N04T2 SMD N channel transistors |
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IXTT50P10 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Drain-source voltage: -100V Drain current: -50A On-state resistance: 55mΩ Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO268 Reverse recovery time: 180ns кількість в упаковці: 1 шт |
на замовлення 17 шт: термін постачання 7-14 дні (днів) |
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IXTT52N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 52A Power dissipation: 400W Case: TO268 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXTT60N20L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Drain current: 60A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 255nC Kind of channel: enhanced Reverse recovery time: 330ns Drain-source voltage: 200V кількість в упаковці: 1 шт |
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IXTT64N25P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268 Mounting: SMD Power dissipation: 400W Polarisation: unipolar Kind of package: tube Gate charge: 105nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 64A On-state resistance: 49mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| IXTT68P20T | IXYS |
IXTT68P20T SMD P channel transistors |
на замовлення 14 шт: термін постачання 7-14 дні (днів) |
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| IXTR102N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXTR120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| IXTR140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
товар відсутній
| IXTR16P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -10A; 190W; 440ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 440ns
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 0.79Ω
Type of transistor: P-MOSFET
Power dissipation: 190W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| IXTR170P10P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
кількість в упаковці: 300 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -100A; 312W; 176ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 240nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 176ns
Drain-source voltage: -100V
Drain current: -100A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Polarisation: unipolar
кількість в упаковці: 300 шт
товар відсутній
| IXTR20P50P |
|
Виробник: IXYS
IXTR20P50P THT P channel transistors
IXTR20P50P THT P channel transistors
на замовлення 32 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1069.31 грн |
| 2+ | 758.16 грн |
| 4+ | 716.93 грн |
| IXTR210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 390W
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2181.21 грн |
| 2+ | 1988.84 грн |
| 3+ | 1914.34 грн |
| 30+ | 1847.02 грн |
| IXTR32P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
кількість в упаковці: 1 шт
товар відсутній
| IXTR36P15P |
|
Виробник: IXYS
IXTR36P15P THT P channel transistors
IXTR36P15P THT P channel transistors
на замовлення 52 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 753.95 грн |
| 2+ | 529.28 грн |
| 6+ | 500.67 грн |
| IXTR40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -22A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -22A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1439.94 грн |
| 2+ | 1312.49 грн |
| IXTR48P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1015.85 грн |
| 2+ | 790.82 грн |
| 3+ | 760.69 грн |
| 4+ | 719.45 грн |
| 30+ | 705.15 грн |
| IXTR62N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 150W; ISOPLUS247™; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 150W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| IXTR90P10P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -57A
Power dissipation: 190W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -57A
Power dissipation: 190W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
кількість в упаковці: 1 шт
товар відсутній
| IXTR90P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -53A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -53A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 315ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1437.23 грн |
| 3+ | 1310.75 грн |
| 30+ | 1247.05 грн |
| IXTT02N450HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
кількість в упаковці: 1 шт
товар відсутній
| IXTT10N100D |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 850ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT10N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT10P60 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Mounting: SMD
Reverse recovery time: 0.5µs
Case: TO268
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Mounting: SMD
Reverse recovery time: 0.5µs
Case: TO268
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXTT110N10L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT110N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT11P50 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT12N150 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: TO268
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 106nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: TO268
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT12N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Drain-source voltage: 1.5kV
Drain current: 12A
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 106nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 1.2µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT140N075L2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT140N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT140P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO268
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT16N10D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO268
On-state resistance: 64mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 830W
Case: TO268
On-state resistance: 64mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 940ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT16N20D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO268; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 607ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO268; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 607ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT16N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT16P60P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Case: TO268
Technology: PolarP™
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 720mΩ
Reverse recovery time: 440ns
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Mounting: SMD
Case: TO268
Technology: PolarP™
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 720mΩ
Reverse recovery time: 440ns
Power dissipation: 460W
Gate charge: 92nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| IXTT170N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT1N250HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 250W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.5µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 250W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT1N300P3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Reverse recovery time: 1.8µs
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Reverse recovery time: 1.8µs
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 1A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| IXTT1N450HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 80Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT24P20 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 300W
Gate charge: 150nC
Polarisation: unipolar
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 198 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 890.79 грн |
| 2+ | 650.13 грн |
| 5+ | 591.55 грн |
| IXTT26N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT26N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT2N170D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO268
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO268; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO268
On-state resistance: 6.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT2N300P3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Kind of package: tube
Drain current: 2A
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
кількість в упаковці: 1 шт
товар відсутній
| IXTT30N50L |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXTT30N50L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXTT30N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXTT30N60L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 710ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT30N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT34N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Power dissipation: 540W
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Power dissipation: 540W
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXTT360N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXTT3N200P3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 3A; 520W; TO268HV; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 3A
Power dissipation: 520W
Case: TO268HV
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT40N50L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
товар відсутній
| IXTT440N04T4HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT440N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT48P20P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
кількість в упаковці: 1 шт
товар відсутній
| IXTT4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 900ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT50P10 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Drain-source voltage: -100V
Drain current: -50A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO268
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 810.14 грн |
| 2+ | 621.29 грн |
| 5+ | 565.47 грн |
| 30+ | 557.05 грн |
| IXTT52N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 52A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
| IXTT60N20L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
кількість в упаковці: 1 шт
товар відсутній
| IXTT64N25P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXTT68P20T |
|
Виробник: IXYS
IXTT68P20T SMD P channel transistors
IXTT68P20T SMD P channel transistors
на замовлення 14 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1094.75 грн |
| 3+ | 1035 грн |