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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 7-14 дні (днів)
1+645.61 грн
3+ 461.31 грн
7+ 420.14 грн
IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4 IXXH40N65B4 IXYS IXXH40N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
на замовлення 175 шт:
термін постачання 7-14 дні (днів)
1+455.14 грн
3+ 394.91 грн
4+ 303.07 грн
9+ 286.46 грн
IXXH40N65B4D1 IXXH40N65B4D1 IXYS IXXH40N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1 IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 7-14 дні (днів)
1+570.5 грн
3+ 394.91 грн
8+ 359.53 грн
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
1+1027.43 грн
2+ 742.4 грн
3+ 714.08 грн
4+ 675.88 грн
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3 IXXH75N60C3 IXYS IXXH75N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3D1 IXXH75N60C3D1 IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4 IXXH80N65B4 IXYS IXXH80N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4D1 IXXH80N65B4D1 IXYS IXXH80N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4H1 IXXH80N65B4H1 IXYS IXXH80N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60B3H1 IXXK100N60B3H1 IXYS IXXK(X)100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60C3H1 IXXK100N60C3H1 IXYS IXXK100N60C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXXK110N65B4H1 IXXK110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK200N60B3 IXYS IXXK(X)200N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK200N65B4 IXYS IXXK(x)200N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1 IXYS IXXN100N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3 IXYS IXXN200N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3H1 IXXN200N60B3H1 IXYS IXXN200N60B3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60C3H1 IXXN200N60C3H1 IXYS IXXN200N60C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N65A4 IXXN200N65A4 IXYS IXXN200N65A4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
кількість в упаковці: 1 шт
товар відсутній
IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Technology: GenX3™; Planar; XPT™
Mounting: THT
Power dissipation: 90W
Case: TO3PF
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Type of transistor: IGBT
Gate charge: 39nC
кількість в упаковці: 1 шт
товар відсутній
IXXR100N60B3H1 IXXR100N60B3H1 IXYS IXXR100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60B3H1 IXXX100N60B3H1 IXYS IXXK(X)100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60C3H1 IXXX100N60C3H1 IXYS IXXK100N60C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1 IXYS IXXX140N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXX200N60B3 IXXX200N60B3 IXYS IXXK(X)200N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX200N65B4 IXXX200N65B4 IXYS IXXK(x)200N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60B3 IXXX300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXYA15N65C3D1 IXYA15N65C3D1 IXYS IXYA(P)15N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 7-14 дні (днів)
2+211.03 грн
3+ 183.66 грн
7+ 140.32 грн
20+ 132.85 грн
Мінімальне замовлення: 2
IXYA20N120C3HV IXYA20N120C3HV IXYS IXY_20N120C3_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 7-14 дні (днів)
1+301.34 грн
3+ 261.26 грн
5+ 200.94 грн
14+ 190.14 грн
IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 7-14 дні (днів)
1+564.24 грн
3+ 389.74 грн
8+ 354.55 грн
IXYA8N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf IXYA8N250CHV SMD IGBT transistors
товар відсутній
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+645.61 грн
3+ 461.31 грн
7+ 420.14 грн
IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 52nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Gate charge: 47nC
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4 IXXH40N65B4.pdf
IXXH40N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
на замовлення 175 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+455.14 грн
3+ 394.91 грн
4+ 303.07 грн
9+ 286.46 грн
IXXH40N65B4D1 IXXH40N65B4D1.pdf
IXXH40N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1.pdf
IXXH40N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
кількість в упаковці: 1 шт
товар відсутній
IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
кількість в упаковці: 1 шт
товар відсутній
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+570.5 грн
3+ 394.91 грн
8+ 359.53 грн
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1027.43 грн
2+ 742.4 грн
3+ 714.08 грн
4+ 675.88 грн
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Type of transistor: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3 IXXH75N60C3.pdf
IXXH75N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXXH75N60C3D1 IXXH75N60C3D1.pdf
IXXH75N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4 IXXH80N65B4.pdf
IXXH80N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4D1 IXXH80N65B4D1.pdf
IXXH80N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
кількість в упаковці: 1 шт
товар відсутній
IXXH80N65B4H1 IXXH80N65B4H1.pdf
IXXH80N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60B3H1 IXXK(X)100N60B3H1.pdf
IXXK100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXK100N60C3H1 IXXK100N60C3H1.pdf
IXXK100N60C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXXK110N65B4H1 IXX_110N65B4H1.pdf
IXXK110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60B3 IXXK(X)200N60B3.pdf
IXXK200N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO264
Turn-off time: 395ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Type of transistor: IGBT
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK200N65B4 IXXK(x)200N65B4.pdf
IXXK200N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Gate charge: 517nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 1kA
Type of transistor: IGBT
Turn-on time: 135ns
Kind of package: tube
Case: TO264
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 650V
Power dissipation: 1.63kW
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXK300N60C3 IXXK(x)300N60C3.pdf
IXXK300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Case: TO264
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
кількість в упаковці: 1 шт
товар відсутній
IXXN100N60B3H1 IXXN100N60B3H1.pdf
IXXN100N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3 IXXN200N60B3.pdf
IXXN200N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60B3H1 IXXN200N60B3H1.pdf
IXXN200N60B3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N60C3H1 IXXN200N60C3H1.pdf
IXXN200N60C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
кількість в упаковці: 1 шт
товар відсутній
IXXN200N65A4 IXXN200N65A4.pdf
IXXN200N65A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
Collector current: 200A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
кількість в упаковці: 1 шт
товар відсутній
IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Technology: GenX3™; Planar; XPT™
Mounting: THT
Power dissipation: 90W
Case: TO3PF
Kind of package: tube
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
Type of transistor: IGBT
Gate charge: 39nC
кількість в упаковці: 1 шт
товар відсутній
IXXR100N60B3H1 IXXR100N60B3H1.pdf
IXXR100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60B3H1 IXXK(X)100N60B3H1.pdf
IXXX100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX100N60C3H1 IXXK100N60C3H1.pdf
IXXX100N60C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1.pdf
IXXX140N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
кількість в упаковці: 1 шт
товар відсутній
IXXX160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
кількість в упаковці: 1 шт
товар відсутній
IXXX200N60B3 IXXK(X)200N60B3.pdf
IXXX200N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 315nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX200N65B4 IXXK(x)200N65B4.pdf
IXXX200N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX4™; Trench; XPT™
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 517nC
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60B3 IXXK(X)300N60B3.pdf
IXXX300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
IXYA15N65C3D1 IXYA(P)15N65C3D1.pdf
IXYA15N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+211.03 грн
3+ 183.66 грн
7+ 140.32 грн
20+ 132.85 грн
Мінімальне замовлення: 2
IXYA20N120C3HV IXY_20N120C3_HV.pdf
IXYA20N120C3HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+301.34 грн
3+ 261.26 грн
5+ 200.94 грн
14+ 190.14 грн
IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+564.24 грн
3+ 389.74 грн
8+ 354.55 грн
IXYA8N250CHV littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf
Виробник: IXYS
IXYA8N250CHV SMD IGBT transistors
товар відсутній
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